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1. 发明申请

US20060079053A1 NROM device and method of making same 有权
标题翻译： NROM设备及其制作方法
公开(公告)号：US20060079053A1
公开(公告)日：2006-04-13
申请号：US10962008
申请日：2004-10-08
申请人： Bomy Chen , Dana Lee , Yaw Hu , Bing Yeh
发明人： Bomy Chen , Dana Lee , Yaw Hu , Bing Yeh
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L21/28114 , H01L27/11568 , H01L29/66553
摘要： A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.
摘要翻译：一种通过在衬底上形成电子捕获电介质材料形成存储器件（和所得器件）的方法，在电介质材料上形成导电材料，在导电材料上形成材料间隔物，去除电介质材料的部分和导电材料以形成位于材料间隔物下方的段，在衬底中形成具有不同于衬底的第二导电类型的第一和第二间隔开的区域，沟道区域在第一和第二区域之间延伸，电介质和第一导电材料的片段设置在沟道区域的第一部分上，用于控制其导电率，并且在沟道区域的第二部分上形成第二导电材料并与之绝缘以控制其导电性。

2. 发明授权

US06806531B1 Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation 有权
公开(公告)号：US06806531B1
公开(公告)日：2004-10-19
申请号：US10409248
申请日：2003-04-07
申请人： Bomy Chen , Dana Lee , Bing Yeh
发明人： Bomy Chen , Dana Lee , Bing Yeh
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , G11C16/0458 , G11C16/0475 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/66825
摘要： A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region. The second portion of the channel region is between the first portion and the second region. A bi-directional non-volatile memory cell has two floating gates each formed in a cavity. A method of making the non-volatile memory cell and the array are also disclosed.

3. 发明授权

US06913975B2 Non-volatile floating gate memory cell with floating gates formed in cavities, and array thereof, and method of formation 有权
标题翻译：具有形成在空腔中的浮动栅极的非易失性浮动栅极存储单元及其阵列，以及形成方法
公开(公告)号：US06913975B2
公开(公告)日：2005-07-05
申请号：US10885923
申请日：2004-07-06
申请人： Bomy Chen , Dana Lee , Bing Yeh
发明人： Bomy Chen , Dana Lee , Bing Yeh
IPC分类号： G11C16/04 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , G11C16/0458 , G11C16/0475 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/66825
摘要： A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region. The second portion of the channel region is between the first portion and the second region. A bi-directional non-volatile memory cell has two floating gates each formed in a cavity. A method of making the non-volatile memory cell and the array are also disclosed.
摘要翻译：非易失性存储单元具有第一导电类型的单结晶硅单晶硅。在半导体材料中形成有彼此间隔开的与第一导电类型不同的第二导电类型的第一和第二区域。具有第一部分的通道区域和第二部分连接用于电荷传导的第一和第二区域。电介质在沟道区上。可以是导电或非导电的浮动栅极位于电介质上，与沟道区的第一部分间隔开。沟道区域的第一部分与第一区域相邻，第一浮栅具有大致三角形形状。浮动门形成在空腔中。栅极电极电容耦合到第一浮动栅极，并且与沟道区域的第二部分间隔开。沟道区域的第二部分在第一部分和第二区域之间。双向非易失性存储单元具有分别形成在空腔中的两个浮动栅极。还公开了制造非易失性存储单元和阵列的方法。

4. 发明授权

US07119396B2 NROM device 有权
标题翻译： NROM设备
公开(公告)号：US07119396B2
公开(公告)日：2006-10-10
申请号：US10962008
申请日：2004-10-08
申请人： Bomy Chen , Dana Lee , Yaw Wen Hu , Bing Yeh
发明人： Bomy Chen , Dana Lee , Yaw Wen Hu , Bing Yeh
IPC分类号： H01L29/792
CPC分类号： H01L27/115 , H01L21/28114 , H01L27/11568 , H01L29/66553
摘要： A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.
摘要翻译：一种通过在衬底上形成电子捕获电介质材料形成存储器件（和所得器件）的方法，在电介质材料上形成导电材料，在导电材料上形成材料间隔物，去除电介质材料的部分和导电材料以形成位于材料间隔物下方的段，在衬底中形成具有不同于衬底的第二导电类型的第一和第二间隔开的区域，沟道区域在第一和第二区域之间延伸，电介质和第一导电材料的片段设置在沟道区域的第一部分上，用于控制其导电率，并且在沟道区域的第二部分上形成第二导电材料并与之绝缘以控制其导电性。

5. 发明申请

US20090150588A1 Hard Disk Drive Cache Memory and Playback Device 审中-公开
标题翻译：硬盘驱动器缓存内存和播放设备
公开(公告)号：US20090150588A1
公开(公告)日：2009-06-11
申请号：US12371494
申请日：2009-02-13
申请人： Jeremy Wang , Fong-Long Lin , Bing Yeh
发明人： Jeremy Wang , Fong-Long Lin , Bing Yeh
IPC分类号： G06F13/00 , G06F12/00
CPC分类号： G06F12/0246 , G06F12/0638 , G06F12/0866 , G06F2212/2022 , G06F2212/225 , Y02D10/13
摘要： A NOR emulating device using a controller and NAND memories can be used in a computer system in placed of the main memory or in place of the BIOS NOR memory. Thus, the emulating device can function as a bootable memory. In addition, the device can act as a cache to the hard disk drive. Further, with the addition of an MP3 player controller into the device, the device can function as a stand alone audio playback device, even while the PC is turned off or is in a hibernating mode. Finally with the MP3 player controller, the device can access additional audio data stored on the hard drive, again with the PC in an off mode or a hibernating mode. Finally, the device can function to operate the disk drive, even while the PC is off or is in a hibernating mode, and control USB ports attached thereto.
摘要翻译：使用控制器和NAND存储器的NOR仿真装置可以在主存储器中放置的计算机系统中使用或代替BIOS NOR存储器。因此，仿真装置可以用作可引导存储器。此外，该设备可以充当硬盘驱动器的缓存。此外，通过在设备中添加MP3播放器控制器，即使在PC关闭或处于休眠模式时，该设备也可以作为独立的音频播放设备。最后使用MP3播放器控制器，设备可以访问存储在硬盘驱动器上的附加音频数据，同时PC处于关闭模式或休眠模式。最后，即使在PC关闭或处于休眠模式，并且控制连接到其上的USB端口，该设备也可以用于操作磁盘驱动器。

6. 发明授权

US08512158B2 Amusement ride system and method 有权
公开(公告)号：US08512158B2
公开(公告)日：2013-08-20
申请号：US13749445
申请日：2013-01-24
申请人： Philip Stephen Bloom , Bing Yeh
发明人： Philip Stephen Bloom , Bing Yeh
IPC分类号： A63G1/34 , A63G1/00
CPC分类号： A63G5/00 , A63F9/02 , A63G33/00 , F41J11/00
摘要： An amusement ride system includes: a shooting device adapted to shoot a projectile; an aiming facility operable by a user to aim the shooting device; and a triggering device operable by the user to fire the shooting device. The user rides the vehicle, aims the shooting device, and fires the device to shoot the projectile. A method for a ride includes: providing a shooting device; providing a plurality of projectiles; and aiming and shooting the projectiles utilizing the shooting device.

7. 发明授权

US08200281B2 Secure removable card and a mobile wireless communication device 有权
标题翻译：安全可移动卡和移动无线通信设备
公开(公告)号：US08200281B2
公开(公告)日：2012-06-12
申请号：US12502897
申请日：2009-07-14
申请人： Bing Yeh
发明人： Bing Yeh
IPC分类号： H04M1/00 , H04B1/38 , H04M9/00 , H04M1/66 , H04M1/68 , H04M3/16
CPC分类号： G07F7/1008 , G06Q20/3278 , G06Q20/341 , G06Q20/352 , G06Q20/3574 , H04W12/02 , H04W12/08 , H04W88/04
摘要： A removable card for use with a mobile wireless communication device has a processor and a non-volatile memory, connected to the processor. The removable card has electrical connections for connecting to a mobile wireless communicating device for use by a user to access a common carrier network to access a network of interconnected computer networks (“Internet”). The card comprises a processor and a non-volatile memory connected to the processor. The non-volatile memory has two portions: a first portion and a second portion. The first portion is accessible by the provider of the common carrier network with the processor restricting access thereto by the user. The second portion is accessible by the provider of the common carrier network and with the processor granting access thereto to the user for storing user data therein. Finally, the removable card has logic circuit for encoding the user data to produce encrypted user data, for storing in the second portion.
摘要翻译：与移动无线通信设备一起使用的可移动卡具有连接到处理器的处理器和非易失性存储器。可拆卸卡具有用于连接到移动无线通信设备的电连接，以供用户使用以访问公共运营商网络以访问互连的计算机网络（“因特网”）的网络。该卡包括连接到处理器的处理器和非易失性存储器。非易失性存储器具有两部分：第一部分和第二部分。第一部分可由公共运营商网络的提供商访问，处理器限制用户对其的访问。第二部分可由公共运营商网络的提供商访问，并且处理器授权访问用户以在其中存储用户数据。最后，可拆卸卡具有用于对用户数据进行编码以产生加密的用户数据的逻辑电路，用于存储在第二部分中。

8. 发明授权

US5029130A Single transistor non-valatile electrically alterable semiconductor memory device 失效
标题翻译：单晶硅非易失性电可变半导体存储器件
公开(公告)号：US5029130A
公开(公告)日：1991-07-02
申请号：US467907
申请日：1990-01-22
申请人： Bing Yeh
发明人： Bing Yeh
IPC分类号： G11C16/04 , H01L21/28 , H01L29/788
CPC分类号： H01L29/7885 , G11C16/0425 , H01L21/28273
摘要： A single transistor electrically programmable and erasable memory cell is disclosed. The single transistor has a source, a drain with a channel region therebetween, defined on a substrate. A first insulating layer is over the source, channel and drain regions. A floating gate is positioned on top of the first insulating layer over a portion of the channel region and over a portion of the drain region. A second insulating layer has a top wall which is over the floating gate, and a side wall which is adjacent thereto. A control gate has a first portion which is over the first insulating layer and immediately adjacent to the side wall of the second insulating layer. The control gate has a second portion which is over the top wall of the second insulating layer and is over the floating gate. Erasure of the cell is accomplished by the mechanism of Fowler-Nordheim tunneling from the floating gate through the second insulating layer to the control gate. Programming is accomplished by electrons from the source migrating through the channel region underneath the control gate and then by abrupt potential drop injecting through the first insulating layer into the floating gate.
摘要翻译：公开了一种单晶体管电可编程和可擦除存储单元。单个晶体管具有限定在衬底上的源极，其间具有通道区域的漏极。第一绝缘层在源极，沟道和漏极区域之上。浮置栅极定位在沟道区域的一部分上方的漏极区域的一部分上的第一绝缘层的顶部上。第二绝缘层具有在浮动栅极上方的顶壁和与其相邻的侧壁。控制栅极具有在第一绝缘层之上并且紧邻第二绝缘层的侧壁的第一部分。控制栅极具有第二部分，该第二部分在第二绝缘层的顶壁之上并且在浮动栅极之上。通过Fowler-Nordheim隧道从浮栅穿过第二绝缘层到控制栅的机制来实现电池的擦除。编程是通过来自源极的电子迁移通过控制栅极下方的沟道区域，然后通过第一绝缘层突入电位滴注入浮栅来完成的。

9. 外观设计

USD679343S1 Doll 有权
公开(公告)号：USD679343S1
公开(公告)日：2013-04-02
申请号：US29410108
申请日：2012-01-04
申请人： Bing Yeh
设计人： Bing Yeh

10. 发明授权

US06756633B2 Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges 有权
标题翻译：半导体存储器阵列的浮动栅极存储单元具有水平定向的浮动栅边缘
公开(公告)号：US06756633B2
公开(公告)日：2004-06-29
申请号：US10183834
申请日：2002-06-25
申请人： Chih Hsin Wang , Bing Yeh
发明人： Chih Hsin Wang , Bing Yeh
IPC分类号： H01L29788
CPC分类号： H01L27/11553 , H01L27/115 , H01L29/42324
摘要： A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.
摘要翻译：一种形成浮置栅极存储单元阵列的自对准方法及由此形成的阵列，其中每个存储单元包括形成在半导体衬底的表面中的沟槽，以及在其间形成沟道区的间隔开的源极和漏极区。漏极区形成在沟槽下方。导电浮栅形成在通道区域的一部分之上并与其绝缘，水平定向的边缘从其延伸。导电控制栅极形成为具有设置在沟槽中的第一部分和与浮栅边缘相邻并与其隔离的第二部分。

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