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1. 发明授权

US09379107B2 FinFET semiconductor devices including dummy structures 有权
标题翻译： FinFET半导体器件包括虚拟结构
公开(公告)号：US09379107B2
公开(公告)日：2016-06-28
申请号：US14693017
申请日：2015-04-22
申请人： Bok-Young Lee , Jeong-Yun Lee , Dong-Hyun Kim , Myeong-Cheol Kim , Dong-Woo Han
发明人： Bok-Young Lee , Jeong-Yun Lee , Dong-Hyun Kim , Myeong-Cheol Kim , Dong-Woo Han
IPC分类号： H01L29/76 , H01L27/088 , H01L27/02
CPC分类号： H01L21/823821 , H01L21/30604 , H01L21/823828 , H01L27/0207 , H01L27/0886 , H01L29/6656 , H01L29/66795
摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体器件包括从衬底突出并沿第一方向延伸的第一有源鳍片和第二有源鳍片，第一栅极结构，其在第一有源鳍片上沿着与第一方向相交的第二方向延伸;第二栅极结构，其位于第二方向上与第一栅极结构相邻并且在第二有源鳍上沿着第二方向延伸;以及虚设结构，其位于第一栅极结构和第二栅极结构之间的空间中。

2. 发明授权

US09443852B2 Integrated circuit devices with source/drain regions including multiple segments 有权
标题翻译：具有包括多个段的源/漏区的集成电路器件
公开(公告)号：US09443852B2
公开(公告)日：2016-09-13
申请号：US14625070
申请日：2015-02-18
申请人： Yeong-Jong Jeong , Jeong-Yun Lee , Dong-Hyun Kim , Bok-Young Lee
发明人： Yeong-Jong Jeong , Jeong-Yun Lee , Dong-Hyun Kim , Bok-Young Lee
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/088 , H01L29/08 , H01L29/423 , H01L21/8238 , H01L29/78 , H01L27/092
CPC分类号： H01L27/0886 , H01L21/823814 , H01L21/823821 , H01L27/0924 , H01L29/0847 , H01L29/42356 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： Integrated circuit devices with source/drain regions including multiple segments and methods of forming the same are provided. The integrated circuit devices may include a gate structure on a substrate and a source/drain region in the substrate adjacent the gate structure. The source/drain region may include a sidewall including a plurality of curved sidewall sections.
摘要翻译：提供具有包括多个段的源/漏区的集成电路器件及其形成方法。集成电路器件可以包括衬底上的栅极结构和邻近栅极结构的衬底中的源极/漏极区域。源极/漏极区域可以包括包括多个弯曲侧壁部分的侧壁。

3. 发明授权

US07029593B2 Method for controlling CD during an etch process 有权
标题翻译：在蚀刻过程中控制CD的方法
公开(公告)号：US07029593B2
公开(公告)日：2006-04-18
申请号：US10685032
申请日：2003-10-14
申请人： Myeong-Cheol Kim , Yong-Hoon Kim , Jeong-Yun Lee
发明人： Myeong-Cheol Kim , Yong-Hoon Kim , Jeong-Yun Lee
IPC分类号： G05D5/00
CPC分类号： H01L22/20 , G03F1/36 , G03F1/80
摘要： A method for controlling CD of etch process defines difference between designed dimension and etched dimension as dimensional displacement and defines target value of the dimensional displacement. A plurality of samples are prepared in each group having different exposure ratios. The plurality of samples of each group are etched until etch end point is detected and then over-etched for uniform time interval after detecting the etch end point. Using etch end point and over-etch time, correlation function of the over-etch time to the etch end point time is determined and the over-etch time to the etch end point is determined using the correlation function.
摘要翻译：用于控制蚀刻工艺的CD的方法将设计尺寸和蚀刻尺寸之间的差异定义为尺寸位移并且定义尺寸位移的目标值。在具有不同曝光比的每个组中制备多个样品。每个组的多个样品被蚀刻直到检测到蚀刻终点，然后在检测到蚀刻终点之后过度蚀刻均匀的时间间隔。使用蚀刻终点和过蚀刻时间，确定到蚀刻终点时间的过蚀刻时间的相关函数，并且使用相关函数确定蚀刻终点的过蚀刻时间。

4. 发明授权

US09431478B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09431478B2
公开(公告)日：2016-08-30
申请号：US14600142
申请日：2015-01-20
申请人： Yeong-Jong Jeong , Jeong-Yun Lee , Geo-Myung Shin , Dong-Suk Shin , Si-Hyung Lee , Seo-Jin Jeong
发明人： Yeong-Jong Jeong , Jeong-Yun Lee , Geo-Myung Shin , Dong-Suk Shin , Si-Hyung Lee , Seo-Jin Jeong
IPC分类号： H01L27/088 , H01L29/06 , H01L29/78 , B82Y10/00 , H01L29/775 , H01L29/41
CPC分类号： H01L29/7848 , B82Y10/00 , H01L21/823814 , H01L21/823821 , H01L21/823878 , H01L27/0886 , H01L27/0924 , H01L29/06 , H01L29/0653 , H01L29/0673 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/413 , H01L29/42392 , H01L29/775 , H01L29/78 , H01L29/7851 , H01L29/7853 , H01L29/78696
摘要： A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.
摘要翻译：一种半导体器件包括由场绝缘层限定并沿着第一方向延伸的第一多沟道有源图案，该第一多沟道有源图案包括第一部分，该第一部分具有在向上方向上进一步向上方突出的顶表面，所述场绝缘层和所述第一部分的两侧上的第二部分，所述第二部分具有连续轮廓的侧壁和在所述场绝缘层的顶表面上向上方向突出的顶表面，并且在向上方向上突出小于第一部分的顶表面的第一部分上的栅电极，在第一多通道有源图案的第一部分上并且沿着不同于第一方向的第二方向延伸的栅电极，以及在第一部分的第二部分上的第一源极/漏极区域第一多通道有源图案并接触场绝缘层。

5. 发明申请

US20130027646A1 IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：平面切换模式液晶显示装置及其制造方法
公开(公告)号：US20130027646A1
公开(公告)日：2013-01-31
申请号：US13551383
申请日：2012-07-17
申请人： Hang-Sup CHO , Young-Sup Jung , Jeong-Yun Lee
发明人： Hang-Sup CHO , Young-Sup Jung , Jeong-Yun Lee
IPC分类号： G02F1/1335 , H01L33/58
CPC分类号： G02F1/133512 , G02F1/134363 , G02F1/13439 , G02F2001/133519 , G02F2201/40 , H01L27/124 , H01L27/1259
摘要： An IPS mode LCD device includes gate and data lines on a first substrate and crossing to define pixel regions; a thin film transistor connected to the gate lines and the data lines; a first common electrode and a pixel electrode on the first substrate and alternating with each other in each pixel region, each of the first common electrode and the pixel electrode including lower and upper layers; a color filter layer including red, green and blue color filter patterns and on a second substrate, the color filter patterns corresponding to each pixel region; and a liquid crystal layer between the first and second substrates, wherein at least two of the color filter patterns overlap at a boundary of the pixel regions, and wherein the lower layer is made of MoTi, and the upper layer is made of a transparent conductive material or copper nitride.
摘要翻译： IPS模式LCD装置包括位于第一基板上的栅极和数据线并且交叉以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 第一公共电极和像素电极在第一基板上，并且在每个像素区域彼此交替，第一公共电极和像素电极中的每一个包括下层和上层; 包括红色，绿色和蓝色滤色器图案的滤色器层，并且在第二基板上，对应于每个像素区域的滤色器图案; 以及在第一和第二基板之间的液晶层，其中至少两个滤色器图案在像素区域的边界处重叠，并且其中下层由MoTi制成，并且上层由透明导电材料或氮化铜。

6. 发明授权

US07560198B2 Photo-mask having exposure blocking region and methods of designing and fabricating the same 有权
标题翻译：具有曝光阻挡区域的光掩模及其设计和制造方法
公开(公告)号：US07560198B2
公开(公告)日：2009-07-14
申请号：US11145985
申请日：2005-06-07
申请人： Il-Yong Jang , Seong-Woon Choi , Seong-Yong Moon , Jeong-Yun Lee , Sung-Hoon Jang
发明人： Il-Yong Jang , Seong-Woon Choi , Seong-Yong Moon , Jeong-Yun Lee , Sung-Hoon Jang
IPC分类号： G03F1/00
CPC分类号： G03F1/36
摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.
摘要翻译：光掩模在主区域中具有主掩模图案，在周边区域中具有浓度校正图案，以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。曝光阻挡图案被配置为防止将密度校正图案转录到晶片。光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的，提供至少指定主掩模图案的设计数据，并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据层。曝光数据包括指定曝光阻挡图案的信息，由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。

7. 发明申请

US20130027625A1 LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置
公开(公告)号：US20130027625A1
公开(公告)日：2013-01-31
申请号：US13546851
申请日：2012-07-11
申请人： Jeong-Yun Lee , Young-Sup Jung , Hang-Sup Cho , Doo-Hee Jang
发明人： Jeong-Yun Lee , Young-Sup Jung , Hang-Sup Cho , Doo-Hee Jang
IPC分类号： G02F1/1368
CPC分类号： G02F1/134363 , G02F1/13439 , G02F2001/134318
摘要： A liquid crystal display device is discussed, which includes a substrate; gate and data lines crossing each other on the substrate to thereby define a pixel region; a thin film transistor connected to the gate and data lines; and a plurality of pixel electrodes and a plurality of first common electrodes alternating with each other in the pixel region and configured to induce an in-plane electric field, and each including a first layer and a second layer on the first layer, wherein the first layer is made of an opaque metal and has a first thickness, and the second layer is made of a transparent conductive material and has a second thickness.
摘要翻译：讨论了一种液晶显示装置，其包括基板; 栅极和数据线在衬底上彼此交叉从而限定像素区域; 连接到栅极和数据线的薄膜晶体管; 以及多个像素电极和多个第一公共电极，其在像素区域中彼此交替并且被配置为引起面内电场，并且每个在第一层上包括第一层和第二层，其中第一层层由不透明金属制成，具有第一厚度，第二层由透明导电材料制成，具有第二厚度。

8. 发明授权

US07253099B2 Method of manufacturing semiconductor device that includes forming self-aligned contact pad 失效
标题翻译：包括形成自对准接触垫的半导体器件的制造方法
公开(公告)号：US07253099B2
公开(公告)日：2007-08-07
申请号：US10957305
申请日：2004-09-30
申请人： Jae-Hee Hwang , Jeong-Yun Lee , Tae-Ryong Kim , Yong-Hyeon Park
发明人： Jae-Hee Hwang , Jeong-Yun Lee , Tae-Ryong Kim , Yong-Hyeon Park
IPC分类号： H01L21/4763
CPC分类号： H01L27/10888 , H01L21/31144 , H01L21/76897 , H01L27/10855
摘要： According to some embodiments, a gate electrode structure including a gate electrode stack and a spacer, and source/drain region are formed on a semiconductor substrate. A first interlayer insulating layer having a thickness greater than that of the gate electrode structure is formed on the semiconductor substrate. On the first interlayer insulating layer, an etch inducing and focusing mask extending in a same direction as a length direction of the gate electrode structure and covering the gate electrode structure is formed. A second interlayer insulating layer is formed on the first interlayer insulating layer. A photoresist pattern is formed on the second interlayer insulating layer. The second interlayer insulating layer and the first interlayer insulating layer are sequentially etched using the photoresist pattern as an etch mask, thereby forming a SAC hole. A conductive material is used to fill in the SAC hole to form a SAC pad.
摘要翻译：根据一些实施例，在半导体衬底上形成包括栅电极堆叠和间隔物的栅电极结构以及源/漏区。在半导体衬底上形成厚度大于栅电极结构的第一层间绝缘层。在第一层间绝缘层上，形成沿与栅电极结构的长度方向相同的方向延伸且覆盖栅电极结构的蚀刻诱导和聚焦掩模。在第一层间绝缘层上形成第二层间绝缘层。在第二层间绝缘层上形成光刻胶图形。使用光致抗蚀剂图案作为蚀刻掩模，依次蚀刻第二层间绝缘层和第一层间绝缘层，从而形成SAC孔。使用导电材料填充SAC孔以形成SAC垫。

9. 发明授权

US09082671B2 Array substrate for liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US09082671B2
公开(公告)日：2015-07-14
申请号：US13587625
申请日：2012-08-16
申请人： Doo-Hee Jang , Young-Sup Jung , Jeong-Yun Lee , Ju-Ran Lee , Soo-Young Choi
发明人： Doo-Hee Jang , Young-Sup Jung , Jeong-Yun Lee , Ju-Ran Lee , Soo-Young Choi
IPC分类号： G01R31/26 , H01L27/12 , G02F1/1343 , G02F1/1335
CPC分类号： H01L27/1259 , G02F1/133553 , G02F1/134363 , G02F1/13439 , G02F2201/40
摘要： An array substrate for a liquid crystal display device comprises: gate and data lines crossing each other on a substrate to define a pixel region; a common line spaced apart from and parallel with the gate line; a thin film transistor in the pixel region and connected to the gate and data lines; a passivation layer on the thin film transistor; and pixel and common electrodes alternately arranged to produce an in-plane electric field, wherein each of the pixel and common electrodes has a double-layered structure of which the lower layer is formed of reflective conductive material and the upper layer is formed of transparent conductive material.
摘要翻译：一种用于液晶显示装置的阵列基板，包括：在基板上彼此交叉的栅极和数据线，以限定像素区域; 与栅极线间隔开并平行的公共线; 像素区域中的薄膜晶体管，并连接到栅极和数据线; 薄膜晶体管上的钝化层; 以及交替排列以产生面内电场的像素和公共电极，其中每个像素和公共电极具有双层结构，其下层由反射导电材料形成，并且上层由透明导电材料。

10. 发明授权

US09075270B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US09075270B2
公开(公告)日：2015-07-07
申请号：US13546851
申请日：2012-07-11
申请人： Jeong-Yun Lee , Young-Sup Jung , Hang-Sup Cho , Doo-Hee Jang
发明人： Jeong-Yun Lee , Young-Sup Jung , Hang-Sup Cho , Doo-Hee Jang
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/13439 , G02F2001/134318
摘要： A liquid crystal display device is discussed, which includes a substrate; gate and data lines crossing each other on the substrate to thereby define a pixel region; a thin film transistor connected to the gate and data lines; and a plurality of pixel electrodes and a plurality of first common electrodes alternating with each other in the pixel region and configured to induce an in-plane electric field, and each including a first layer and a second layer on the first layer, wherein the first layer is made of an opaque metal and has a first thickness, and the second layer is made of a transparent conductive material and has a second thickness.
摘要翻译：讨论了一种液晶显示装置，其包括基板; 栅极和数据线在衬底上彼此交叉从而限定像素区域; 连接到栅极和数据线的薄膜晶体管; 以及多个像素电极和多个第一公共电极，其在像素区域中彼此交替并且被配置为引起面内电场，并且每个在第一层上包括第一层和第二层，其中第一层层由不透明金属制成，具有第一厚度，第二层由透明导电材料制成，具有第二厚度。

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