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1. 发明申请

US20150155024A1 MAGNETIC MEMORY DEVICES INCLUDING SHARED LINES 有权
标题翻译：包含共享线的磁记录设备
公开(公告)号：US20150155024A1
公开(公告)日：2015-06-04
申请号：US14448717
申请日：2014-07-31
申请人： Bo-Young SEO , Yong-Kyu Lee , Choong-Jae Lee , Kee-Moon Chun , Hee-Seog Jeon
发明人： Bo-Young SEO , Yong-Kyu Lee , Choong-Jae Lee , Kee-Moon Chun , Hee-Seog Jeon
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1659
摘要： A magnetic memory device includes word lines, bit lines intersecting the word lines, magnetic memory elements disposed at intersections between the word lines and the bit lines, and selection transistors connected to the word lines. The magnetic memory elements share a word line among the plurality of word lines and also share a selection transistor connected to the word line that is shared among the selection transistors. Related systems and operating methods are also described.
摘要翻译：磁存储器件包括字线，与字线交叉的位线，设置在字线和位线之间的交叉处的磁存储元件，以及连接到字线的选择晶体管。磁存储元件在多个字线之间共享字线，并且共享连接到在选择晶体管之间共享的字线的选择晶体管。还描述了相关系统和操作方法。

2. 发明申请

US20170345475A1 RESISTIVE-TYPE MEMORY DEVICES AND INTEGRATED CIRCUITS INCLUDING THE SAME 审中-公开
公开(公告)号：US20170345475A1
公开(公告)日：2017-11-30
申请号：US15402231
申请日：2017-01-09
申请人： Choong-Jae LEE , Gwan-Hyeob KOH , Bo-Young SEO , Yong-Kyu LEE
发明人： Choong-Jae LEE , Gwan-Hyeob KOH , Bo-Young SEO , Yong-Kyu LEE
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/005 , G11C11/16 , G11C11/1653 , G11C11/1655 , G11C11/1657 , G11C11/1673 , G11C11/1675 , G11C11/22 , G11C13/0002
摘要： A resistive-type memory device is disclosed. The resistive-type memory device includes a memory cell array and a control logic circuit. The control logic circuit accesses the memory cell array in response to a command and an address provided from an outside. The memory cell array includes at least a first group of resistive-type memory cells and a second group of resistive-type memory cells. Each of the first group of resistive-type memory cells has a first feature size and each of the second group of resistive-type memory cells has a second feature size that is different from the first feature size.

3. 发明申请

US20120018797A1 NONVOLATILE MEMORY DEVICE, AND METHODS OF MANUFACTURING AND DRIVING THE SAME 审中-公开
标题翻译：非易失性存储器件及其制造和驱动方法
公开(公告)号：US20120018797A1
公开(公告)日：2012-01-26
申请号：US13168257
申请日：2011-06-24
申请人： Tea-Kwang YU , Yong-Tae KIM , Byung-Sup SHIM , Yong-Kyu LEE , Bo-Young SEO , Ji-Hoon PARK
发明人： Tea-Kwang YU , Yong-Tae KIM , Byung-Sup SHIM , Yong-Kyu LEE , Bo-Young SEO , Ji-Hoon PARK
IPC分类号： H01L29/792
CPC分类号： H01L27/11568 , H01L21/28518 , H01L21/743 , H01L21/76224 , H01L21/76895 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： A nonvolatile memory device includes a device isolation film defining an active region in a semiconductor substrate, a pocket well region formed in an upper portion of the active region and having a first conductivity type, a gate electrode formed on the active region and extending to intersect the active region, a tunnel insulating film, a charge storage film, and a blocking insulating film sequentially disposed between the active region and the gate electrode, a source region and a drain region respectively formed in a first region and a second region of the active region exposed on both sides of the gate electrode, and each having a second conductivity type opposite to the first conductivity type, a pocket well junction region formed in the first region adjacent to the source region and contacting the pocket well region, and having the first conductivity type, and a metal silicide layer formed in the first region and contacting the source region and the pocket well junction region.
摘要翻译：非易失性存储器件包括限定半导体衬底中的有源区的器件隔离膜，形成在有源区的上部并具有第一导电类型的凹穴阱区，形成在有源区上并延伸到相交的栅电极有源区，隧道绝缘膜，电荷存储膜和顺序地设置在有源区和栅电极之间的阻挡绝缘膜，分别形成在有源区和栅极的第一区和第二区中的源区和漏区在所述栅电极的两侧露出，并且具有与所述第一导电类型相反的第二导电类型的凹穴结区，形成在与所述源极区相邻的所述第一区域中并且与所述凹穴阱区接触并且具有第一导电型，以及形成在第一区域中的金属硅化物层，并且与源极区域和凹穴阱结区域接触。

4. 发明申请

US20120007212A1 SEMICONDUCTOR DEVICE HAVING A DIODE 有权
标题翻译：具有二极管的半导体器件
公开(公告)号：US20120007212A1
公开(公告)日：2012-01-12
申请号：US13178762
申请日：2011-07-08
申请人： Bo-Young SEO , Byung-Suo Shim , Yong-Kyu Lee , Tea-Kwang Yu , Ji-Hoon Park
发明人： Bo-Young SEO , Byung-Suo Shim , Yong-Kyu Lee , Tea-Kwang Yu , Ji-Hoon Park
IPC分类号： H01L29/06
CPC分类号： H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/06
摘要： Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.
摘要翻译：提供一种半导体器件。该半导体器件包括半导体衬底上的下部有源区。提供从下部有源区域的顶表面突出并且具有比下部有源区域更窄的多个上部有源区域。提供了围绕下部有源区域的侧壁的下部隔离区域。提供了形成在下隔离区域上的上隔离区域，其围绕上活性区域的侧壁，并且具有比下隔离区域窄的宽度。提供形成在下部有源区并延伸到上部有源区的第一杂质区。提供形成在上部有源区并与第一杂质区一起构成二极管的第二杂质区。还提供了制造该方法的方法。

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