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1. 发明申请

US20090052230A1 INTEGRATED CIRCUIT INCLUDING SILICIDE REGION TO INHIBIT PARASITIC CURRENTS 有权
标题翻译：集成电路，其中包括硅化物区域禁止残留电流
公开(公告)号：US20090052230A1
公开(公告)日：2009-02-26
申请号：US11843044
申请日：2007-08-22
申请人： Bipin Rajendran , Shoaib Hasan Zaidi
发明人： Bipin Rajendran , Shoaib Hasan Zaidi
IPC分类号： G11C11/00 , H01L21/00 , H01L29/02
CPC分类号： H01L27/1021 , G11C13/0004 , G11C2213/72 , H01L27/24
摘要： An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first silicide region between the first diode and the second diode.
摘要翻译：公开了一种集成电路。一个实施例包括耦合到第一二极管和第二二极管的第一二极管，第二二极管和半导体线。该线包括在第一二极管和第二二极管之间的第一硅化物区域。

2. 发明授权

US07408240B2 Memory device 失效
标题翻译：内存设备
公开(公告)号：US07408240B2
公开(公告)日：2008-08-05
申请号：US11120007
申请日：2005-05-02
申请人： Shoaib Hasan Zaidi
发明人： Shoaib Hasan Zaidi
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/124 , H01L45/126 , H01L45/144 , H01L45/1691
摘要： A phase change memory cell is disclosed. The phase change memory cell includes a first thin film spacer and a second thin film spacer. The first thin film spacer defines a sub-lithographic dimension and is electrically coupled to a first electrode. The second thin film spacer defines a sub-lithographic dimension and is electrically coupled between a second electrode and the first thin film spacer. In this regard, the phase change memory cell is formed at a boundary where the first thin film spacer electrically contacts the second thin film spacer.
摘要翻译：公开了一种相变存储器单元。相变存储单元包括第一薄膜间隔物和第二薄膜间隔物。第一薄膜间隔物限定亚光刻尺寸并且电耦合到第一电极。第二薄膜间隔物限定了亚光刻尺寸，并且电耦合在第二电极和第一薄膜间隔物之间。在这方面，相变存储单元形成在第一薄膜间隔物与第二薄膜间隔物电接触的边界处。

3. 发明授权

US06724479B2 Method for overlay metrology of low contrast features 失效
标题翻译：低对比度特征叠加测量方法
公开(公告)号：US06724479B2
公开(公告)日：2004-04-20
申请号：US09967176
申请日：2001-09-28
申请人： Shoaib Hasan Zaidi
发明人： Shoaib Hasan Zaidi
IPC分类号： G01B1100
CPC分类号： G03F7/70633 , G01J9/00
摘要： A wavefront sensing tool, such as a Shack-Hartmann detector, detects alignment features in a semiconductor wafer that might otherwise be undetectable using conventional optical tools, such as a microscope. This is particularly advantageous for alignment features formed in photoresist with a height that is less than one fourth the illuminating light's wavelength. The wavefront sensing tool can be used in conjunction with conventional optical tools and a composite alignment image can be formed from the two tools. For higher sensitivity, the light reflected off the wafer can be magnified, with e.g. a telescopic lens, prior to impinging upon the wavefront sensing tool. The composite image can be generated by one or both of the tools or by a computer coupled to the tools.
摘要翻译：诸如Shack-Hartmann检测器的波前感测工具检测半导体晶片中的对准特征，否则可能使用诸如显微镜的常规光学工具不可检测。这对于具有低于照明光的波长的四分之一的高度的光致抗蚀剂中形成的对准特征是特别有利的。波前感测工具可以与常规光学工具结合使用，并且可以从两种工具形成复合对准图像。为了更高的灵敏度，从晶片反射的光可以被放大。一个伸缩透镜，在撞击波前感测工具之前。合成图像可以由一个或两个工具或耦合到工具的计算机生成。

4. 发明申请

US20080157072A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20080157072A1
公开(公告)日：2008-07-03
申请号：US12049484
申请日：2008-03-17
申请人： Shoaib Hasan Zaidi
发明人： Shoaib Hasan Zaidi
IPC分类号： H01L29/08 , H01L21/06
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/124 , H01L45/126 , H01L45/144 , H01L45/1691
摘要： A phase change memory cell is disclosed. The phase change memory cell includes a first thin film spacer and a second thin film spacer. The first thin film spacer defines a sub-lithographic dimension and is electrically coupled to a first electrode. The second thin film spacer defines a sub-lithographic dimension and is electrically coupled between a second electrode and the first thin film spacer. In this regard, the phase change memory cell is formed at a boundary where the first thin film spacer electrically contacts the second thin film spacer.
摘要翻译：公开了一种相变存储器单元。相变存储单元包括第一薄膜间隔物和第二薄膜间隔物。第一薄膜间隔物限定亚光刻尺寸并且电耦合到第一电极。第二薄膜间隔物限定了亚光刻尺寸，并且电耦合在第二电极和第一薄膜间隔物之间。在这方面，相变存储单元形成在第一薄膜间隔物与第二薄膜间隔物电接触的边界处。

5. 发明授权

US06888260B2 Alignment or overlay marks for semiconductor processing 失效
标题翻译：用于半导体处理的对准或叠加标记
公开(公告)号：US06888260B2
公开(公告)日：2005-05-03
申请号：US10249530
申请日：2003-04-17
申请人： Enio Carpi , Shoaib Hasan Zaidi
发明人： Enio Carpi , Shoaib Hasan Zaidi
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： An alignment or overlay mark with improved signal to noise ratio is disclosed. Improved signal-to-noise ratio results in greater depth of focus, thus improving the performance of the alignment mark. The alignment mark comprises a zone plate having n concentric alternating opaque and non-opaque rings. Light diffracted by either the odd or even rings are cancelled while light diffracted by the other of the odd or even rings are added.
摘要翻译：公开了具有改善的信噪比的对准或重叠标记。提高的信噪比导致更高的聚焦深度，从而提高对准标记的性能。对准标记包括具有n个同心交替的不透明和非不透明环的区域板。被奇数或偶数环衍射的光被消除，而被奇数或偶数环中的另一个衍射的光被添加。

6. 发明授权

US07388667B2 Optical determination of resistivity of phase change materials 失效
标题翻译：相变材料电阻率的光学测定
公开(公告)号：US07388667B2
公开(公告)日：2008-06-17
申请号：US11240026
申请日：2005-09-30
申请人： Thomas Happ , Shoaib Hasan Zaidi
发明人： Thomas Happ , Shoaib Hasan Zaidi
IPC分类号： G01N21/55
CPC分类号： G01N21/211 , G01N21/55 , G11C13/0004 , G11C13/04
摘要： A system includes a non-contacting optical measurement instrument and a controller. The non-contacting optical measurement instrument is configured to obtain a measurement of a phase-change material. The controller is configured to determine a resistivity of the phase-change material based on the measurement.
摘要翻译：系统包括非接触式光学测量仪器和控制器。非接触式光学测量仪器被配置为获得相变材料的测量。控制器被配置为基于测量来确定相变材料的电阻率。

7. 发明授权

US07427774B1 Targets for measurements in semiconductor devices 有权
标题翻译：半导体器件测量目标
公开(公告)号：US07427774B1
公开(公告)日：2008-09-23
申请号：US11119029
申请日：2005-04-29
申请人： Ulrich Mantz , Shoaib Hasan Zaidi , Christopher Gould
发明人： Ulrich Mantz , Shoaib Hasan Zaidi , Christopher Gould
IPC分类号： H01L23/58
CPC分类号： H01L23/544 , G03F9/7076 , H01L22/12 , H01L2223/54426 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： Targets or test structures used for measurements in semiconductor devices having long lines exceeding design rule limitations are divided into segments. In one embodiment, the segments have periodicity in a direction parallel to the length of the lines. In another embodiment, the segments of test structures in adjacent lines do not have periodicity in a direction parallel to the length of the lines. The lack of periodicity is achieved by staggering segments of substantially equal lengths in adjacent lines, or by dividing the lines into segments having unequal lengths. The test structures may be formed in scribe line regions or die regions of a semiconductor wafer.
摘要翻译：用于具有超过设计规则限制的长线的半导体器件中的测量的目标或测试结构被划分为段。在一个实施例中，片段在平行于线的长度的方向上具有周期性。在另一个实施例中，相邻线中的测试结构的段在平行于线的长度的方向上不具有周期性。周期性的缺乏通过在相邻线中交错基本上相等长度的段来实现，或者通过将线划分成具有不等长度的段来实现。测试结构可以形成在半导体晶片的划线区域或裸片区域中。

8. 发明授权

US06548314B1 Method for enabling access to micro-sections of integrated circuits on a wafer 有权
标题翻译：能够访问晶片上的集成电路的微型部分的方法
公开(公告)号：US06548314B1
公开(公告)日：2003-04-15
申请号：US10015212
申请日：2001-12-10
申请人： Shoaib Hasan Zaidi
发明人： Shoaib Hasan Zaidi
IPC分类号： H01L2166
CPC分类号： H01L22/34 , Y10S977/854 , Y10S977/888
摘要： The present invention provides a method of enabling measurement access to small integrated circuit features that comprises selecting a feature of an integrated circuit on a wafer and providing access to the selected feature by removing a portion of the integrated circuit adjacent to the feature, thereby preserving the wafer.
摘要翻译：本发明提供了一种能够测量小型集成电路特征的方法，该方法包括：选择晶片上的集成电路的特征，并通过去除与该特征相邻的集成电路的一部分来提供对所选特征的访问，由此保留晶圆。

9. 发明授权

US07973301B2 Low power phase change memory cell with large read signal 有权
标题翻译：具有较大读取信号的低功率相变存储单元
公开(公告)号：US07973301B2
公开(公告)日：2011-07-05
申请号：US11133491
申请日：2005-05-20
申请人： Thomas Happ , Shoaib Hasan Zaidi , Jan Boris Philipp
发明人： Thomas Happ , Shoaib Hasan Zaidi , Jan Boris Philipp
IPC分类号： H01L47/00 , H01L29/02 , H01L29/04 , H01L29/06
CPC分类号： H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/1246 , H01L45/144 , H01L45/1675
摘要： A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.
摘要翻译：存储单元包括第一电极，第二电极和相变材料，其包括接触第一电极的第一部分，接触第二电极的第二部分和第一部分与第二部分之间的第三部分。第三部分的宽度小于第一部分的宽度和第二部分的宽度。

10. 发明授权

US07718467B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US07718467B2
公开(公告)日：2010-05-18
申请号：US12049484
申请日：2008-03-17
申请人： Shoaib Hasan Zaidi
发明人： Shoaib Hasan Zaidi
IPC分类号： H01L29/08
CPC分类号： H01L45/06 , H01L27/2463 , H01L45/124 , H01L45/126 , H01L45/144 , H01L45/1691
摘要： A phase change memory cell is disclosed. The phase change memory cell includes a first thin film spacer and a second thin film spacer. The first thin film spacer defines a sub-lithographic dimension and is electrically coupled to a first electrode. The second thin film spacer defines a sub-lithographic dimension and is electrically coupled between a second electrode and the first thin film spacer. In this regard, the phase change memory cell is formed at a boundary where the first thin film spacer electrically contacts the second thin film spacer.
摘要翻译：公开了一种相变存储器单元。相变存储单元包括第一薄膜间隔物和第二薄膜间隔物。第一薄膜间隔物限定亚光刻尺寸并且电耦合到第一电极。第二薄膜间隔物限定了亚光刻尺寸，并且电耦合在第二电极和第一薄膜间隔物之间。在这方面，相变存储单元形成在第一薄膜间隔物与第二薄膜间隔物电接触的边界处。

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