专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明申请

US20050153213A1 Method for the repair of defects in photolithographic masks for patterning semiconductor wafers 有权
标题翻译：用于修复用于图案化半导体晶片的光刻掩模中的缺陷的方法
公开(公告)号：US20050153213A1
公开(公告)日：2005-07-14
申请号：US10753604
申请日：2004-01-08
申请人： Steffen Schulze , Enio Carpi
发明人： Steffen Schulze , Enio Carpi
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/72
摘要： A method for repairing defects in a photolithographic mask for use in patterning semiconductor wafers introduces a pre-selected phase error selected to sum with a phase error of a defect repair material, yielding a desired composite phase error relative to light passing through the substrate alone, e.g., 180°. Substrate phase error may be introduced by modifying its thickness. For example, after any opaque layer material within a repair zone surrounding the defect is removed, the substrate, too, is removed within the repair zone to a pre-selected depth, forming a lacuna. Repair material is then deposited in the lacuna and in the remainder of the repair zone to a level substantially equal to the top surface of the opaque layer, yielding a desired, combined phase error and attenuation matching those of defect free regions of the mask where the opaque layer has not been removed.
摘要翻译：用于修复用于图案化半导体晶片的光刻掩模中的缺陷的方法将选择的预选相位误差与缺陷修复材料的相位误差相加，产生相对于仅通过衬底的光的期望的复合相位误差，例如180°。可以通过修改其厚度来引入基板相位误差。例如，在围绕缺陷的修复区域中的任何不透明层材料被去除之后，衬底也在修复区域内被移除到预先选定的深度，形成空隙。然后将修复材料沉积在缺陷部分中并在修复区域的其余部分中达到基本等于不透明层顶表面的水平，产生与掩模的无缺陷区域相匹配的期望的组合相位误差和衰减，其中不透明层未被去除。

IPRDB

热门服务

关于我们

友情链接

联系方式