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1. 发明授权

US06916543B2 Copolymer, photoresist compositions thereof and deep UV bilayer system thereof 失效
标题翻译：共聚物，其光致抗蚀剂组合物和深UV双层体系
公开(公告)号：US06916543B2
公开(公告)日：2005-07-12
申请号：US10699298
申请日：2003-10-31
申请人： Binod B. De , Sanjay Malik , Stephanie J. Dilocker , Ognian N. Dimov
发明人： Binod B. De , Sanjay Malik , Stephanie J. Dilocker , Ognian N. Dimov
IPC分类号： B32B9/04 , C08F34/00 , C08F130/08 , C08F220/30 , C08F230/08 , C08G77/20 , G03C1/492 , G03C1/73 , G03C5/08 , G03F20060101 , G03F7/039 , G03F7/075 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/0758 , C08F220/30 , C08F230/08 , Y10T428/31663
摘要： Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
摘要翻译：新颖的共聚物适用于在深U V（特别是193nm和248nm）双层抗蚀剂体系中形成顶层可光成像涂层，提供高分辨率光刻。化学扩增的光致抗蚀剂组合物和适用于粘合剂树脂的有机硅部分，用于光可光刻抗蚀光致抗蚀剂组合物，其适用于使用新型共聚物的ArF和KrF光刻中的材料。

2. 发明申请

US20120178871A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION 有权
标题翻译：热固化底层用于光刻应用
公开(公告)号：US20120178871A1
公开(公告)日：2012-07-12
申请号：US13426194
申请日：2012-03-21
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： C08L55/00
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composirion being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻热可固化底层组合物，所述组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

3. 发明授权

US08153346B2 Thermally cured underlayer for lithographic application 有权
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US08153346B2
公开(公告)日：2012-04-10
申请号：US12033923
申请日：2008-02-20
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/09 , G03F7/11
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

4. 发明授权

US08535872B2 Thermally cured underlayer for lithographic application 有权
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US08535872B2
公开(公告)日：2013-09-17
申请号：US13426194
申请日：2012-03-21
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

5. 发明申请

US20080206676A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION 有权
标题翻译：热固化底层用于光刻应用
公开(公告)号：US20080206676A1
公开(公告)日：2008-08-28
申请号：US12033923
申请日：2008-02-20
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/26 , G03F5/00 , G03F7/004
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

6. 发明申请

US20100304299A1 CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION 有权
标题翻译：化学放大阳性光电组合物
公开(公告)号：US20100304299A1
公开(公告)日：2010-12-02
申请号：US12791397
申请日：2010-06-01
申请人： Ognian N. Dimov , Binod B. De
发明人： Ognian N. Dimov , Binod B. De
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397
摘要： A photoresist composition. The composition has the following: (a) one or more resin binders that include one or more acid sensitive groups and that are substantially free of phenolic groups protected by acetal or ketal groups; (b) one or more photo acid generators, that, upon exposure to a source of high energy, decompose and generate a photoacid strong enough to remove the one or more acid sensitive groups; (c) one or more ionic non-photosensitive additives including an iminium salt; and (d) one or more solvents. There is also a process for patterning relief structures on a substrate employing the photoresist composition.
摘要翻译：光致抗蚀剂组合物。组合物具有以下：（a）一种或多种树脂粘合剂，其包括一个或多个酸敏感基团，并且基本上不含被缩醛或缩酮基团保护的酚基; （b）一种或多种光酸产生剂，其在暴露于高能量源时分解并产生足够强的光酸以除去一个或多个酸敏感基团; （c）一种或多种离子非感光性添加剂，包括亚胺盐; 和（d）一种或多种溶剂。还有一种使用光致抗蚀剂组合物在衬底上图案化浮雕结构的方法。

7. 发明授权

US09034557B2 Chemically amplified positive photoresist composition 有权
标题翻译：化学扩增的正性光致抗蚀剂组合物
公开(公告)号：US09034557B2
公开(公告)日：2015-05-19
申请号：US12791397
申请日：2010-06-01
申请人： Ognian N. Dimov , Binod B. De
发明人： Ognian N. Dimov , Binod B. De
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0392 , G03F7/0397
摘要： A photoresist composition. The composition has the following: (a) one or more resin binders that include one or more acid sensitive groups and that are substantially free of phenolic groups protected by acetal or ketal groups; (b) one or more photo acid generators, that, upon exposure to a source of high energy, decompose and generate a photoacid strong enough to remove the one or more acid sensitive groups; (c) one or more ionic non-photosensitive additives including an iminium salt; and (d) one or more solvents. There is also a process for patterning relief structures on a substrate employing the photoresist composition.
摘要翻译：光致抗蚀剂组合物。组合物具有以下：（a）一种或多种树脂粘合剂，其包括一个或多个酸敏感基团，并且基本上不含被缩醛或缩酮基团保护的酚基; （b）一种或多种光酸产生剂，其在暴露于高能量源时分解并产生足够强的光酸以除去一个或多个酸敏感基团; （c）一种或多种离子非感光性添加剂，包括亚胺盐; 和（d）一种或多种溶剂。还有一种使用光致抗蚀剂组合物在衬底上图案化浮雕结构的方法。

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