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1. 发明授权

US08462101B2 Apparatus for and method of controlling backlight of display panel in camera system 有权
标题翻译：相机系统显示面板背光控制装置及其控制方法
公开(公告)号：US08462101B2
公开(公告)日：2013-06-11
申请号：US12835122
申请日：2010-07-13
申请人： Bing Han , Paul Gallagher , Yun-tae Lee , Joon-seo Yim
发明人： Bing Han , Paul Gallagher , Yun-tae Lee , Joon-seo Yim
IPC分类号： G09G5/10
CPC分类号： G09G3/3406 , G09G2320/0626 , G09G2320/103 , G09G2340/16 , G09G2360/144
摘要： An apparatus controls a backlight of a display panel of a camera system. The apparatus includes a sub-pixel extracting unit, an ambient light luminance calculating unit, and a backlight controller. The sub-pixel extracting unit extracts sub-pixel luminance values from image data, where the image data is indicative of a current image frame defined by a plurality of pixels, and where each of the pixels includes a plurality of sub-pixels. The ambient light luminance calculating unit calculates an ambient light luminance value of the current image frame from the sub-pixel luminance values extracted by the sub-pixel extracting unit. The backlight controller which generates a backlight control signal based on a comparison between the calculated ambient light luminance value of the current image frame and an ambient light luminance value of a previous image frame.
摘要翻译：一种装置控制照相机系统的显示面板的背光。该装置包括子像素提取单元，环境光亮度计算单元和背光控制器。子像素提取单元从图像数据中提取子像素亮度值，其中图像数据表示由多个像素定义的当前图像帧，并且其中每个像素包括多个子像素。环境光亮度计算单元从由子像素提取单元提取的子像素亮度值计算当前图像帧的环境光亮度值。背光控制器，其基于计算出的当前图像帧的环境光亮度值与前一图像帧的环境光亮度值之间的比较来生成背光控制信号。

2. 发明申请

US20110007103A1 APPARATUS FOR AND METHOD OF CONTROLLING BACKLIGHT OF DISPLAY PANEL IN CAMERA SYSTEM 有权
标题翻译：控制摄像机系统显示面板背光的装置及方法
公开(公告)号：US20110007103A1
公开(公告)日：2011-01-13
申请号：US12835122
申请日：2010-07-13
申请人： Bing Han , Paul Gallagher , Yun-tae Lee , Joon-seo Yim
发明人： Bing Han , Paul Gallagher , Yun-tae Lee , Joon-seo Yim
IPC分类号： G09G5/10
CPC分类号： G09G3/3406 , G09G2320/0626 , G09G2320/103 , G09G2340/16 , G09G2360/144
摘要： An apparatus controls a backlight of a display panel of a camera system. The apparatus includes a sub-pixel extracting unit, an ambient light luminance calculating unit, and a backlight controller. The sub-pixel extracting unit extracts sub-pixel luminance values from image data, where the image data is indicative of a current image frame defined by a plurality of pixels, and where each of the pixels includes a plurality of sub-pixels. The ambient light luminance calculating unit calculates an ambient light luminance value of the current image frame from the sub-pixel luminance values extracted by the sub-pixel extracting unit. The backlight controller which generates a backlight control signal based on a comparison between the calculated ambient light luminance value of the current image frame and an ambient light luminance value of a previous image frame.
摘要翻译：一种装置控制照相机系统的显示面板的背光。该装置包括子像素提取单元，环境光亮度计算单元和背光控制器。子像素提取单元从图像数据中提取子像素亮度值，其中图像数据表示由多个像素定义的当前图像帧，并且其中每个像素包括多个子像素。环境光亮度计算单元从由子像素提取单元提取的子像素亮度值计算当前图像帧的环境光亮度值。背光控制器，其基于计算出的当前图像帧的环境光亮度值与前一图像帧的环境光亮度值之间的比较来生成背光控制信号。

3. 发明申请

US20140272194A1 ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME 有权
标题翻译：有机氨基甲酸酯前体及其制备和使用方法
公开(公告)号：US20140272194A1
公开(公告)日：2014-09-18
申请号：US14291818
申请日：2014-05-30
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C23C16/24 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/30
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

4. 发明申请

US20140043553A1 Array substrate and LCD panel 有权
标题翻译：阵列基板和液晶面板
公开(公告)号：US20140043553A1
公开(公告)日：2014-02-13
申请号：US13640935
申请日：2012-08-10
申请人： Shih-Hsun Lo , Shyh_Feng Chen , Bing Han
发明人： Shih-Hsun Lo , Shyh_Feng Chen , Bing Han
IPC分类号： G02F1/1362 , H01L27/15
CPC分类号： G02F1/136286 , G02F1/134309 , G02F2201/40 , H01L27/156
摘要： The present invention discloses an array substrate, comprising: multiple pixel units arranged in an array having rows and columns, and each of the pixel units comprises a pixel electrode, and the pixel electrode comprises at least a trunk portion corresponding to an opaque dark area; and multiple scan lines, and each of the scan lines is disposed within the vertical projection of the trunk portion for inputting a scanning signal to one of the pixel units. The present invention also discloses an LCD panel. By the above way, the present invention can improve the transmittance and the aperture ratio of the LCD panel.
摘要翻译：本发明公开了一种阵列基板，包括：排列成具有行和列的阵列的多个像素单元，并且每个像素单元包括像素电极，并且所述像素电极至少包括对应于不透明暗区的主体部分; 和多个扫描线，并且每个扫描线设置在主干部分的垂直投影内，用于将扫描信号输入到像素单元之一。本发明还公开了一种LCD面板。通过上述方式，本发明可以提高LCD面板的透射率和开口率。

5. 发明授权

US09447287B2 Compositions and processes for depositing carbon-doped silicon-containing films 有权
标题翻译：用于沉积碳掺杂的含硅膜的组合物和工艺
公开(公告)号：US09447287B2
公开(公告)日：2016-09-20
申请号：US14122825
申请日：2012-06-01
申请人： Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Joseph Karwacki, Jr. , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Xinjian Lei , Ronald Martin Pearlstein , Haripin Chandra , Eugene Joseph Karwacki, Jr. , Bing Han , Mark Leonard O'Neill
IPC分类号： C23C16/34 , C09D5/00 , C07F7/08 , C23C16/30 , C23C16/40 , C23C16/455
CPC分类号： H01L21/02211 , C07F7/0896 , C07F7/10 , C09D5/00 , C09D7/63 , C23C16/30 , C23C16/345 , C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/0228
摘要： Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3−x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3−x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
摘要翻译：本文描述了用于沉积含碳掺杂硅的膜的组合物，其中组合物包含第一前体，其包含至少一种选自下组的化合物：具有式R 5 Si（NR 3 R 4）x H 3-x的有机氨基烷基硅烷，其中x = 1， 2，3; 具有式R6Si（OR7）xH3-x的有机烷氧基烷基硅烷，其中x = 1,2,3; 具有式R 8 N（SiR 9（NR 10 R 11）H）2的有机氨基硅烷; 具有式R8N（SiR9LH）2的有机氨基硅烷及其组合; 和任选地包含具有下式的化合物的第二前体：Si（NR1R2）H3。本文还描述了使用该组合物沉积碳掺杂含硅膜的方法，其中所述方法选自以下：循环化学气相沉积（CCVD），原子层沉积（ALD），等离子体增强ALD（PEALD）和等离子增强CCVD（PECCVD）。

6. 发明授权

US09005719B2 Organoaminosilane precursors and methods for making and using same 有权
标题翻译：有机氨基硅烷前体及其制备和使用方法
公开(公告)号：US09005719B2
公开(公告)日：2015-04-14
申请号：US14291818
申请日：2014-05-30
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C23C16/24 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/30 , C07F7/02 , H01L21/02 , C23C16/455 , C07F7/10
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

7. 发明授权

US08805106B2 System and method for compressing and decompressing images and video 有权
标题翻译：用于压缩和解压缩图像和视频的系统和方法
公开(公告)号：US08805106B2
公开(公告)日：2014-08-12
申请号：US12566473
申请日：2009-09-24
申请人： Bing Han , Dapeng Oliver Wu , Jun Tian , Hong Heather Yu
发明人： Bing Han , Dapeng Oliver Wu , Jun Tian , Hong Heather Yu
IPC分类号： G06K9/36 , G06K9/46 , H04N7/26 , H04N7/30
CPC分类号： H04N19/645 , H04N19/12 , H04N19/132 , H04N19/176 , H04N19/18 , H04N19/44 , H04N19/46 , H04N19/48 , H04N19/60 , H04N19/61 , H04N19/62 , H04N19/625
摘要： A system and method for image and video compression and decompression using compressive sensing is provided. A method for decompressing a compressed image, where the compressed image having a plurality of compressed image blocks, and the method is performed on a processor, includes selecting a compressed image block, entropy decoding the selected compressed image block, and recovering an image block corresponding to the decoded selected compressed image block using compressive sensing recovery.
摘要翻译：提供了使用压缩感测的图像和视频压缩和解压缩的系统和方法。一种解压缩压缩图像的方法，其中具有多个压缩图像块的压缩图像和该方法在处理器上执行，包括选择压缩图像块，对所选压缩图像块进行熵解码，以及恢复相应的图像块使用压缩感测恢复到解码的所选压缩图像块。

8. 发明授权

US08460753B2 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes 有权
标题翻译：使用氨基乙烯基硅烷沉积二氧化硅或氧化硅膜的方法
公开(公告)号：US08460753B2
公开(公告)日：2013-06-11
申请号：US12964266
申请日：2010-12-09
申请人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
发明人： Manchao Xiao , Liu Yang , Kirk Scott Cuthill , Heather Regina Bowen , Bing Han , Mark Leonard O'Neill
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228
摘要： Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.
摘要翻译：本文描述了形成二氧化硅膜的方法，其使用热CVD法，ALD法或循环CVD法在HF溶液中具有极低的湿蚀刻速率，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-n-m; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。

9. 发明申请

US20130095571A1 THE METHOD FOR QUICK AND SIMULTANEOUS DETERMINATION OF 16 INORGANIC ANIONS AND ORGANIC ACIDS IN TOBACCO 有权
标题翻译：在烟草中快速和同时测定16种无机阴离子和有机酸的方法
公开(公告)号：US20130095571A1
公开(公告)日：2013-04-18
申请号：US13806115
申请日：2011-12-07
申请人： Jing Hu , Ruifeng Zhao , Wenzhuang Shi , Feng Li , Rong Zhou , Bing Han
发明人： Jing Hu , Ruifeng Zhao , Wenzhuang Shi , Feng Li , Rong Zhou , Bing Han
IPC分类号： G01N33/00
CPC分类号： G01N33/0098 , G01N30/88 , G01N30/96 , G01N2030/884 , Y10T436/16 , Y10T436/173076 , Y10T436/18 , Y10T436/19 , Y10T436/201666
摘要： The present invention discloses a method for quick and simultaneous determination of 16 inorganic anions and organic acids in tobacco by ion chromatography The retention behavior of inorganic anions and organic acids on the anion exchange column was investigated using potassium hydroxide produced by EGC-II KOH eluent autogenerator as eluent. The optimized gradient elution condition was obtained. The samples were prepared through extraction, filtration and dilution before analysis. The separation was performed on an anion exchange column. The time of the gradient elution program was 50 mins. Under the optimized conditions, the calibration of peak area for all the analytes were linear in the ranges of 105. The method in the present invention has the advantadges of simplicity, rapidity and accuracy, and is able to simultaneously determine 16 inorganic anions and organic acids in tobacco by one single time of injection.
摘要翻译：本发明公开了一种通过离子色谱快速同时测定烟草中16种无机阴离子和有机酸的方法。使用由EGC-II KOH洗脱自发生器产生的氢氧化钾研究无机阴离子和有机酸对阴离子交换柱的保留行为作为洗脱液。获得了优化的梯度洗脱条件。在分析前通过萃取，过滤和稀释制备样品。分离在阴离子交换柱上进行。梯度洗脱程序的时间为50分钟。在优化条件下，所有分析物的峰面积校准在105范围内是线性的。本发明的方法具有简便，快速和准确的优点，能够同时测定16种无机阴离子和有机酸在烟草中一次注射。

10. 发明申请

US20100009546A1 Aminosilanes for Shallow Trench Isolation Films 有权
标题翻译：氨基硅烷用于浅沟槽隔离膜
公开(公告)号：US20100009546A1
公开(公告)日：2010-01-14
申请号：US12492201
申请日：2009-06-26
申请人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
发明人： Scott Jeffrey Weigel , Mark Leonard O'Neill , Bing Han , Hansong Cheng , Manchao Xiao , Chia-Chien Lee
IPC分类号： H01L21/3105 , H01L21/314 , C09D7/00
CPC分类号： H01L21/3121 , C23C18/122 , C23C18/1245 , C23C18/14 , H01L21/02164 , H01L21/02219 , H01L21/02282 , H01L21/316
摘要： The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.
摘要翻译：本发明是一种用于在氧化条件下用于间隙填充的含二氧化硅的膜的沉积方法，用于在存储器和含逻辑电路的半导体衬底中使用的浅沟槽隔离的高纵横比特征中，例如具有包含其中的一个或多个集成电路结构，包括以下步骤：提供具有高纵横比特征的半导体衬底; 使半导体衬底与包含低分子量氨基硅烷的液体制剂接触; 通过在半导体衬底上铺展液体制剂形成膜; 在氧化条件下在升高的温度下加热薄膜。还介绍了这一过程的组成。

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