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1. 外观设计

USD873709S1 Self-balancing transportation device 有权
公开(公告)号：USD873709S1
公开(公告)日：2020-01-28
申请号：US29587030
申请日：2016-12-08
申请人： Bing Han
设计人： Bing Han

2. 发明授权

US08988332B2 Pixel structure and corresponding liquid crystal display device 有权
标题翻译：像素结构和相应的液晶显示装置
公开(公告)号：US08988332B2
公开(公告)日：2015-03-24
申请号：US13638886
申请日：2012-07-25
申请人： Shih-Hsun Lo , Bing Han
发明人： Shih-Hsun Lo , Bing Han
IPC分类号： G09G3/36 , G02F1/1343 , G02F1/1362 , G02F1/1337
CPC分类号： G09G3/36 , G02F1/133753 , G02F1/134309 , G02F1/136213 , G02F1/136286 , G09G2300/0426
摘要： Disclosed are a pixel structure and a corresponding liquid crystal display device. The pixel structure comprises a plurality of pixel electrodes, a plurality of data lines, a plurality of scan lines, and a plurality of common electrodes. The common electrodes are disposed in a plurality of first metal trunk areas corresponding to a plurality of pixel electrode vertical trunk areas of trunk electrodes and/or gap areas between two adjacent pixel areas of a first metal layer. The pixel structure and the corresponding liquid crystal display device of the present invention are capable of increasing an aperture ratio of the pixel structure.
摘要翻译：公开了一种像素结构和相应的液晶显示装置。像素结构包括多个像素电极，多条数据线，多条扫描线和多条公共电极。公共电极设置在与第一金属层的两个相邻像素区域之间的主体电极的多个像素电极垂直主干区域和/或间隙区域对应的多个第一金属主干区域中。本发明的像素结构和相应的液晶显示装置能够增加像素结构的开口率。

3. 发明授权

US08976329B2 Array substrate and LCD panel 有权
标题翻译：阵列基板和液晶面板
公开(公告)号：US08976329B2
公开(公告)日：2015-03-10
申请号：US13640935
申请日：2012-08-10
申请人： Shih-Hsun Lo , Shyh-Feng Chen , Bing Han
发明人： Shih-Hsun Lo , Shyh-Feng Chen , Bing Han
IPC分类号： G02F1/1343 , G02F1/1362 , H01L27/15
CPC分类号： G02F1/136286 , G02F1/134309 , G02F2201/40 , H01L27/156
摘要： The present invention discloses an array substrate, comprising: multiple pixel units arranged in an array having rows and columns, and each of the pixel units comprises a pixel electrode, and the pixel electrode comprises at least a trunk portion corresponding to an opaque dark area; and multiple scan lines, and each of the scan lines is disposed within the vertical projection of the trunk portion for inputting a scanning signal to one of the pixel units. The present invention also discloses an LCD panel. By the above way, the present invention can improve the transmittance and the aperture ratio of the LCD panel.
摘要翻译：本发明公开了一种阵列基板，包括：排列成具有行和列的阵列的多个像素单元，并且每个像素单元包括像素电极，并且所述像素电极至少包括对应于不透明暗区的主体部分; 和多个扫描线，并且每个扫描线设置在主干部分的垂直投影内，用于将扫描信号输入到像素单元之一。本发明还公开了一种LCD面板。通过上述方式，本发明可以提高LCD面板的透射率和开口率。

4. 发明申请

US20140347593A1 DISPLAY MODULE AND DISPLAY DEVICE 有权
标题翻译：显示模块和显示设备
公开(公告)号：US20140347593A1
公开(公告)日：2014-11-27
申请号：US13985672
申请日：2013-06-27
申请人： Bing Han , Shih-hsun Lo
发明人： Bing Han , Shih-hsun Lo
IPC分类号： G02F1/1345
CPC分类号： G02F1/13458 , G02F1/1309 , G02F1/133308 , G02F1/13452 , G02F2001/13332
摘要： A display module and a display device are provided. The display module includes a display panel and a front frame. The display panel includes a display region and a non-display region both located at a side of a light emitting surface, wherein, the non-display region disposed at a peripheral area of the display panel and provided with a test pad electrically connected to wiring a of the display region. The front frame includes a front plate disposed opposite to at least a portion of the non-display region, and having an electric conduction portion for conducting away a current and an insulation portion for insulating the electric conduction portion from the test pad on the display panel. The present invention can avoid LCD screen noise and flicker because the test pad of the display panel contact with the front frame.
摘要翻译：提供了显示模块和显示装置。显示模块包括显示面板和前框架。显示面板包括位于发光面的一侧的显示区域和非显示区域，其中，设置在显示面板的周边区域的非显示区域设置有电连接到布线的测试垫 a的显示区域。前框架包括与非显示区域的至少一部分相对设置的前板，并且具有用于传导电流的导电部分和用于使导电部分与显示面板上的测试垫绝缘的绝缘部分。本发明可以避免LCD屏幕的噪音和闪烁，因为显示面板的测试垫与前框架接触。

5. 发明授权

US08771807B2 Organoaminosilane precursors and methods for making and using same 有权
标题翻译：有机氨基硅烷前体及其制备和使用方法
公开(公告)号：US08771807B2
公开(公告)日：2014-07-08
申请号：US13474076
申请日：2012-05-17
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

6. 发明授权

US08703625B2 Methods to prepare silicon-containing films 有权
标题翻译：制备含硅膜的方法
公开(公告)号：US08703625B2
公开(公告)日：2014-04-22
申请号：US13015720
申请日：2011-01-28
申请人： Liu Yang , Manchao Xiao , Bing Han , Kirk S. Cuthill , Mark L. O'Neill
发明人： Liu Yang , Manchao Xiao , Bing Han , Kirk S. Cuthill , Mark L. O'Neill
IPC分类号： H01L21/20 , H01L21/36 , H01L23/58
CPC分类号： H01L21/02216 , B01J19/00 , C07F7/02 , C09D183/04 , C23C16/30 , C23C16/44 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/316 , H01L29/00
摘要： Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要翻译：本文描述了形成包括硅，氧化物和任选的氮，碳，氢和硼的介电膜的方法。本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

7. 发明授权

US08703624B2 Dielectric films comprising silicon and methods for making same 有权
标题翻译：包含硅的介电薄膜及其制造方法
公开(公告)号：US08703624B2
公开(公告)日：2014-04-22
申请号：US12717572
申请日：2010-03-04
申请人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
发明人： Liu Yang , Manchao Xiao , Kirk Scott Cuthill , Bing Han , Mark Leonard O'Neill
IPC分类号： H01L21/316
CPC分类号： H01L21/02164 , C23C16/30 , C23C16/308 , C23C16/401 , H01L21/0228
摘要： Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.
摘要翻译：这里描述的是形成包括硅的介电膜的方法，所述介电膜包括硅，例如但不限于氧化硅，碳氧化硅，碳化硅及其组合，其表现出以下特征中的至少一个：低湿蚀刻电阻，介电常数为6.0或更低，和/或可承受高温快速热退火工艺。本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。

8. 发明申请

US20130189853A1 Low Temperature Deposition of Silicon-Containing Films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US20130189853A1
公开(公告)日：2013-07-25
申请号：US13624190
申请日：2012-09-21
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, JR. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, JR. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
IPC分类号： H01L21/02
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

9. 发明申请

US20130129940A1 ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME 有权
标题翻译：有机氨基甲酸酯前体及其制备和使用方法
公开(公告)号：US20130129940A1
公开(公告)日：2013-05-23
申请号：US13474076
申请日：2012-05-17
申请人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
发明人： Manchao Xiao , Xinjian Lei , Bing Han , Mark Leonard O'Neill , Ronald Martin Pearlstein , Richard Ho , Haripin Chandra , Agnes Derecskei-Kovacs
IPC分类号： C07F7/02
CPC分类号： C23C16/24 , C07F7/025 , C07F7/10 , C23C16/308 , C23C16/32 , C23C16/345 , C23C16/347 , C23C16/401 , C23C16/402 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02219 , H01L21/0228
摘要： Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.
摘要翻译：本文描述了可用于沉积含有硅的含硅膜的有机氨基硅烷前体和用于制备这些前体的方法。本文还公开了使用本文所述的有机氨基硅烷前体制备含硅膜或含硅膜的沉积方法。还公开了包含有机氨基硅烷前体或其组合物的容器，其可以用于例如将前体输送到反应器以沉积含硅膜。

10. 发明授权

US08298628B2 Low temperature deposition of silicon-containing films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US08298628B2
公开(公告)日：2012-10-30
申请号：US12476734
申请日：2009-06-02
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

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