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1. 发明申请

US20120231180A1 PROCESS OF PURIFYING RUTHENIUM PRECURSORS 审中-公开
标题翻译：净化前辈的工艺
公开(公告)号：US20120231180A1
公开(公告)日：2012-09-13
申请号：US13230033
申请日：2011-09-12
申请人： Bin XIA , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
发明人： Bin XIA , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
IPC分类号： C09D5/00 , C23C16/50 , C23C16/06
CPC分类号： B01D15/00 , C07C41/44 , C07C43/12 , C07C43/126
摘要： Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.
摘要翻译：公开了通过使惰性气体流过含钌前驱体从含钌前驱体中除去氧来纯化含钌前体的方法。还公开了使用纯化的含钌前体形成改进的含钌膜的方法。

2. 发明申请

US20100116738A1 Process Of Purifying Ruthenium Precursors 审中-公开
标题翻译：净化钌前体的方法
公开(公告)号：US20100116738A1
公开(公告)日：2010-05-13
申请号：US12437224
申请日：2009-05-07
申请人： Bin Xia , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
发明人： Bin Xia , Zhiwen Wan , Ashutosh Misra , Olivier Letessier
IPC分类号： B01D15/04
CPC分类号： B01D15/00 , C07C41/44 , C07C43/12 , C07C43/126
摘要： The present invention provides for two separate processes for removing impurities from an organic solvent based ruthenium precursor. The first process comprises the steps of contacting the organic solvent based ruthenium precursor with one or more drying agents under an inert gas blanket for a sufficient period of time to allow at least a portion of the impurities in the organic solvent based ruthenium precursor to be adsorbed by the one or more drying agents; and separating the one or more drying agents which have at least a portion of the impurities adsorbed thereon from the organic solvent based ruthenium precursor. The second process comprises the steps of providing a column that contains one or more drying agents and is equipped with a filtration unit; passing the organic solvent based ruthenium precursor through the column in order to allow at least a portion of the impurities in the solvent based ruthenium precursor to be adsorbed by the one or more drying agents, said passing of the solvent based ruthenium precursor taking place under a blanket of inert gas; and further passing the ruthenium precursor through the filtration unit in order ro remove any residual particles that may result from the passage of the ruthenium precursor through the column containing the one or more drying agents in order to obtain a purified ruthenium precursor.
摘要翻译：本发明提供了用于从有机溶剂型钌前体中除去杂质的两种分开的方法。第一种方法包括以下步骤：使有机溶剂基钌前体与一种或多种干燥剂在惰性气体覆盖下接触足够的时间，以允许有机溶剂型钌前体中的至少一部分杂质被吸附由一种或多种干燥剂; 以及从有机溶剂型钌前体分离其中吸附有至少一部分杂质的一种或多种干燥剂。第二种方法包括提供含有一种或多种干燥剂并装有过滤装置的柱子的步骤; 使有机溶剂基钌前体通过柱，以使至少一部分溶剂型钌前体中的杂质被一种或多种干燥剂吸附，所述溶剂型钌前体在惰性气体毯; 并且进一步使钌前体通过过滤单元以顺序去除可能由钌前体通过含有一种或多种干燥剂的柱而导致的残余颗粒，以获得纯化的钌前体。

3. 发明申请

US20080242912A1 Methods and Apparatus for Providing a High Purity Acetylene Product 审中-公开
标题翻译：提供高纯度乙炔产品的方法和设备
公开(公告)号：US20080242912A1
公开(公告)日：2008-10-02
申请号：US11942361
申请日：2007-11-19
申请人： Olivier Letessier , Richard J. Udischas , James J.F. McAndrew , Regis Zils , Fabrice Delcorso , Rajat Agrawal
发明人： Olivier Letessier , Richard J. Udischas , James J.F. McAndrew , Regis Zils , Fabrice Delcorso , Rajat Agrawal
IPC分类号： C07C7/12 , B01D35/30 , B01D35/18
CPC分类号： C07C7/12 , C07C2521/18 , C07C11/24
摘要： Methods and apparatus for the purification and distribution of acetylene. Acetylene is removed from an acetylene storage device, and provided to a purifier where solvent is removed. The purified acetylene is then provided to a semiconductor processing tool.
摘要翻译：乙炔净化和分配的方法和装置。将乙炔从乙炔储存装置中除去，并提供给去除溶剂的净化器。然后将纯化的乙炔提供给半导体加工工具。

4. 发明授权

US08852460B2 Alkali earth metal precursors for depositing calcium and strontium containing films 有权
标题翻译：用于沉积钙和含锶膜的碱土金属前体
公开(公告)号：US08852460B2
公开(公告)日：2014-10-07
申请号：US12406682
申请日：2009-03-18
申请人： Olivier Letessier , Christian Dussarrat , Benjamin J. Feist , Vincent M. Omarjee
发明人： Olivier Letessier , Christian Dussarrat , Benjamin J. Feist , Vincent M. Omarjee
IPC分类号： H01B1/00 , H01B1/12 , B05D5/12 , C23C16/00 , C23C16/40 , B05D3/12 , B05D3/00 , H05H1/24 , H01T14/00 , H05B6/02 , H05B6/24 , C07F5/00 , C08B5/04 , H01L39/24 , C04B35/45 , C21B13/00 , C21B11/10 , C23C16/455
CPC分类号： C23C16/404 , C23C16/409 , C23C16/45553
摘要： Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.
摘要翻译：用于在基底上沉积膜的方法和组合物。通常，所公开的组合物和方法利用含有钙或锶的前体。

5. 发明授权

US07487806B2 Source liquid supply apparatus having a cleaning function 有权
标题翻译：源液供给装置具有清洁功能
公开(公告)号：US07487806B2
公开(公告)日：2009-02-10
申请号：US10495775
申请日：2002-11-13
申请人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
发明人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
IPC分类号： B65B1/04
CPC分类号： B08B9/032 , B08B9/00 , C23C16/4402 , C23C16/45561
摘要： A source liquid supply apparatus and method that avoids leaving source liquid-and/or cleaning fluid-derived residues in the vicinity of the connection region between the source liquid feed conduit and the source tank. A flow-switching mechanism is attached to the source tank of a source liquid supply apparatus. This flow-switching mechanism has a first port connected to the discharge port conduit of the source tank, a second port connected to a feed conduit, and a third port connected to an exhaust conduit. The first port can be closed by a valve member on a diaphragm disposed within a common compartment while communication is maintained between the second and third ports. A cleaning fluid source and a purge gas source are connected to the feed conduit. Purge gas and cleaning fluid fed into the feed conduit are discharged from the second and third ports and through the exhaust conduit.
摘要翻译：源液供给装置和方法，其避免在源液体供给管道和源罐之间的连接区域附近留下源液体和/或清洁流体残留物。流动切换机构附接到源液体供应装置的源罐。这种流动切换机构具有连接到源罐的排出口导管的第一端口，连接到进料导管的第二端口和连接到排气导管的第三端口。第一端口可以通过设置在公共隔室内的隔膜上的阀构件封闭，同时在第二和第三端口之间保持通信。清洁流体源和净化气体源连接到进料导管。进料到进料管道中的吹扫气体和清洗液体从第二和第三端口排出并通过排气导管排出。

6. 发明申请

US20050109374A1 Source liquid supply apparatus having a cleaning function 有权
标题翻译：源液供给装置具有清洁功能
公开(公告)号：US20050109374A1
公开(公告)日：2005-05-26
申请号：US10495775
申请日：2002-11-13
申请人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
发明人： Olivier Letessier , Masao Kimura , Jean-Marc Girard , Akinobu Nasu
IPC分类号： B08B9/00 , B08B9/02 , C23C16/44
CPC分类号： B08B9/032 , B08B9/00 , C23C16/4402 , C23C16/45561
摘要： (Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16. Purge gas and cleaning fluid fed into the feed conduit 16 are discharged from the second and third ports 34 and 35 through the exhaust conduit 25.
摘要翻译：（问题）提供一种源液体供应装置，其避免在源液体进料导管和源罐之间的接头或连接区域附近留下源液体和/或清洁流体衍生的残留物。（解决方案）流动切换机构Vc安装在源液体供给装置20的源罐22上。该流量切换机构Vc具有与源罐22的排出口导管24连接的第一口33，连接到进料管道16的第二端口34和连接到排气管道25的第三端口35.第一端口33可以由设置在公共隔室38中的隔膜42上的阀构件43封闭，同时在第二和第三端口34和35之间保持通信。清洁流体源55和净化气体源57连接到进料导管16.进料到进料管道16中的吹扫气体和清洗流体从第二和第三端口34排出。端口34和35通过排气导管25。

7. 发明授权

US08088938B2 Low decomposition storage of a tantalum precursor 有权
标题翻译：钽前体的低分解储存
公开(公告)号：US08088938B2
公开(公告)日：2012-01-03
申请号：US12340888
申请日：2008-12-22
申请人： Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
发明人： Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
IPC分类号： C07F9/00 , B01J19/00
CPC分类号： C23C16/4404 , C23C16/4481
摘要： Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
摘要翻译：存储降低前体分解速率的前体的方法。提供容器，其中容器具有由第一材料制成的外表面和由第二材料制成的内表面。第一和第二种材料是不同的。将含钽的前体放置在容器内，并将容器加热至60℃至150℃之间的温度。将至少部分前体从容器中取出。

8. 发明申请

US20090163732A1 Low Decomposition Storage of a Tantalum Precursor 有权
标题翻译：钽前体的低分解储存
公开(公告)号：US20090163732A1
公开(公告)日：2009-06-25
申请号：US12340888
申请日：2008-12-22
申请人： Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
发明人： Nathan Stafford , Christian Dussarrat , Olivier Letessier , Ravi K. Laxman
IPC分类号： C07F9/00
CPC分类号： C23C16/4404 , C23C16/4481
摘要： Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.
摘要翻译：存储降低前体分解速率的前体的方法。提供容器，其中容器具有由第一材料制成的外表面和由第二材料制成的内表面。第一和第二种材料是不同的。将含钽的前体放置在容器内，并将容器加热至60℃至150℃之间的温度。将至少部分前体从容器中取出。

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