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1. 发明申请

US20110210423A1 INTEGRATED CIRCUIT DEVICES HAVING A STRONTIUM RUTHENIUM OXIDE INTERFACE 有权
标题翻译：具有氧化钌界面的集成电路设备
公开(公告)号：US20110210423A1
公开(公告)日：2011-09-01
申请号：US13103162
申请日：2011-05-09
申请人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
发明人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
IPC分类号： H01L29/86 , H01L21/02
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

2. 发明申请

US20100258903A1 STRONTIUM RUTHENIUM OXIDE INTERFACE 有权
标题翻译：锶氧化铝界面
公开(公告)号：US20100258903A1
公开(公告)日：2010-10-14
申请号：US12421916
申请日：2009-04-10
申请人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
发明人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
IPC分类号： H01L27/10 , B05D5/12
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

3. 发明授权

US08399952B2 Integrated circuit devices having a strontium ruthenium oxide interface 有权
标题翻译：具有锶氧化钌界面的集成电路器件
公开(公告)号：US08399952B2
公开(公告)日：2013-03-19
申请号：US13103162
申请日：2011-05-09
申请人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
发明人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
IPC分类号： H01L21/00
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

4. 发明授权

US07939442B2 Strontium ruthenium oxide interface 有权
标题翻译：钌氧化钌界面
公开(公告)号：US07939442B2
公开(公告)日：2011-05-10
申请号：US12421916
申请日：2009-04-10
申请人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
发明人： Bhaskar Srinivasan , Vassil Antonov , John Smythe
IPC分类号： H01L21/00
CPC分类号： H01L28/75 , C23C16/404 , C23C16/409 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02197 , H01L21/022 , H01L21/0228 , H01L28/56 , H01L28/65
摘要： Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
摘要翻译：钌氧化钌提供钌导体和锶钛氧化物电介质之间的有效界面。锶氧化钌的形成包括使用原子层沉积形成氧化锶，随后退火氧化锶以形成氧化锶锶。使用水作为氧源来进行氧化锶的第一原子层沉积，然后使用臭氧作为氧源，随后用氧化锶沉积氧化锶。

5. 发明授权

US08940388B2 Insulative elements 有权
标题翻译：绝缘元素
公开(公告)号：US08940388B2
公开(公告)日：2015-01-27
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , H01G4/33 , H01G4/30 , H01G4/12
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

6. 发明申请

US20120225268A1 INSULATIVE ELEMENTS AND METHODS OF FORMING THE SAME 有权
标题翻译：绝缘元件及其形成方法
公开(公告)号：US20120225268A1
公开(公告)日：2012-09-06
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , B05D1/36 , B05D5/12 , B05D3/02 , B32B9/00 , B05D5/00
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

7. 发明授权

US09159551B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US09159551B2
公开(公告)日：2015-10-13
申请号：US12496890
申请日：2009-07-02
申请人： Vassil Antonov , Vishwanath Bhat
发明人： Vassil Antonov , Vishwanath Bhat
IPC分类号： H01G4/00 , H01G5/00 , H01G7/00 , H01G9/00 , H01G13/00 , H01B13/00 , C23F1/00 , C23F3/00 , H01L21/02 , H01L21/3105 , H01L49/02
CPC分类号： H01L21/02356 , H01L21/02175 , H01L21/02186 , H01L21/3105 , H01L28/65
摘要： A method of forming a capacitor includes depositing a dielectric metal oxide layer of a first phase to a thickness no greater than 75 Angstroms over an inner conductive capacitor electrode material. The first phase dielectric metal oxide layer has a k of at least 15. Conductive RuO2 is deposited over and into physical contact with the dielectric metal oxide layer. Then, the RuO2 and the dielectric metal oxide layer are annealed at a temperature below 500° C. The RuO2 in physical contact with the dielectric metal oxide during the annealing facilitates a change of the dielectric metal oxide layer from the first phase to a second crystalline phase having a higher k than the first phase. The annealed dielectric metal oxide layer is incorporated into a capacitor dielectric region of a capacitor construction. Other implementations are disclosed.
摘要翻译：形成电容器的方法包括在内部导电电容器电极材料上沉积第一相的电介质金属氧化物层至不大于75埃的厚度。第一相介电金属氧化物层的k至少为15.导电RuO 2沉积在物理接触介电金属氧化物层上。然后，RuO 2和介电金属氧化物层在低于500℃的温度下退火。退火期间与电介质金属氧化物物理接触的RuO 2促进介电金属氧化物层从第一相到第二晶体的变化相具有比第一相高的k。退火的介质金属氧化物层被结合到电容器结构的电容器电介质区域中。公开了其他实现。

8. 发明授权

US08513807B2 Semiconductor devices including a ruthenium film 有权
标题翻译：包括钌膜的半导体器件
公开(公告)号：US08513807B2
公开(公告)日：2013-08-20
申请号：US13407185
申请日：2012-02-28
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译：提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。

9. 发明授权

US08208241B2 Crystallographically orientated tantalum pentoxide and methods of making same 有权
标题翻译：晶体取向的五氧化二钽及其制备方法
公开(公告)号：US08208241B2
公开(公告)日：2012-06-26
申请号：US12132758
申请日：2008-06-04
申请人： Vishwanath Bhat , Vassil Antonov
发明人： Vishwanath Bhat , Vassil Antonov
IPC分类号： H01G4/06
CPC分类号： C23C16/405 , C23C16/4488 , C30B25/02 , C30B29/16 , H01L21/31637 , H01L28/65
摘要： Methods of forming an oxide are disclosed and include contacting a ruthenium-containing material with a tantalum-containing precursor and contacting the ruthenium-containing material with a vapor that includes water and optionally molecular hydrogen (H2). Articles including a first crystalline tantalum pentoxide and a second crystalline tantalum pentoxide on at least a portion of the first crystalline tantalum pentoxide, wherein the first tantalum pentoxide has a crystallographic orientation that is different than the crystallographic orientation of the second crystalline tantalum pentoxide, are also disclosed.
摘要翻译：公开了形成氧化物的方法，包括使含钌材料与含钽前体接触，并使含钌材料与包含水和任选的分子氢（H 2）的蒸气接触。在第一结晶五氧化二钽的至少一部分上包含第一结晶五氧化二钽和第二结晶五氧化二钽的物品，其中第一五氧化二钽具有不同于第二结晶五氧化二钽的晶体取向的晶体取向，也是披露

10. 发明授权

US08124528B2 Method for forming a ruthenium film 有权
标题翻译：形成钌膜的方法
公开(公告)号：US08124528B2
公开(公告)日：2012-02-28
申请号：US12100632
申请日：2008-04-10
申请人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
发明人： Vishwanath Bhat , Dan Gealy , Vassil Antonov
IPC分类号： H01L21/44
CPC分类号： H01L28/40 , C23C16/029 , C23C16/18 , H01G4/085 , H01G4/1209 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.
摘要翻译：提供形成钌膜的方法和诸如包括膜的电容器的半导体器件。

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