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    • 2. 发明申请
    • CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS
    • 基于氯化铝的材料和改进的制造这种材料的方法
    • US20110226336A1
    • 2011-09-22
    • US13047190
    • 2011-03-14
    • Jennifer E. GerbiMarc G. LangloisRobert T. Nilsson
    • Jennifer E. GerbiMarc G. LangloisRobert T. Nilsson
    • H01L31/0264C23C14/34C23C14/06G02F1/361
    • H01L31/0749C23C14/0623C23C14/3464C23C14/5866H01L21/02568H01L21/02614H01L21/02631
    • The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.
    • 本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。 通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。 当前体的全部或一部分具有其它结构的情况下,还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。 所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。 通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。 所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低,并且所得膜在膜的顶部或底部具有优化的Ga分布,其改善了使用该膜制备的光电装置的质量。
    • 3. 发明授权
    • Chalcogenide-based materials and improved methods of making such materials
    • 基于硫族化物的材料和制备这种材料的改进方法
    • US08993882B2
    • 2015-03-31
    • US13047190
    • 2011-03-14
    • Jennifer E. GerbiMarc G. LangloisRobert T. Nilsson
    • Jennifer E. GerbiMarc G. LangloisRobert T. Nilsson
    • H01L31/0264H01L21/02C23C14/06C23C14/34C23C14/58
    • H01L31/0749C23C14/0623C23C14/3464C23C14/5866H01L21/02568H01L21/02614H01L21/02631
    • The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.
    • 本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。 通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。 当前体的全部或一部分具有其它结构的情况下,还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。 所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。 通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。 所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低,并且所得膜在膜的顶部或底部具有优化的Ga分布,其改善了使用该膜制备的光电装置的质量。
    • 6. 发明授权
    • Methods for making WC-containing bodies
    • 制作含WC体的方法
    • US5612264A
    • 1997-03-18
    • US555944
    • 1995-11-13
    • Robert T. NilssonRichard T. FoxStephen D. Dunmead
    • Robert T. NilssonRichard T. FoxStephen D. Dunmead
    • C04B35/56
    • C04B35/6455C04B35/5607C04B35/5611C04B35/5622C04B35/5626C04B35/58007C04B35/645
    • A method of forming a low level carbon high-density tungsten carbide-containing material includes sintering a preform which contains tungsten carbide powder and has a composition such that the resulting sintered material has at most 6.05 weight percent tungsten-bound carbon based on the total weight of tungsten and tungsten-bound carbon. This low level of carbon may be achieved by, prior to the sintering step, oxidizing the tungsten carbide powder sufficiently to achieve the desired substoichiometric carbon level in the sintered product or by adding a carbon-lowering material selected from the group consisting of tungsten, ditungsten carbide, and tungsten oxide. Optionally, other materials can be present in the preform such as carbon-getter metals and compounds thereof. The carbon-getter metals are those metals of which the carbides thereof are more thermodynamically stable than monotungsten carbide.
    • 形成低碳碳高密度碳化钨的材料的方法包括烧结含有碳化钨粉末的预成型体,并且具有使得所得烧结材料基于总重量具有至多6.05重量%的钨结合碳的组成 的钨和钨结合的碳。 这种低水平的碳可以通过在烧结步骤之前充分氧化碳化钨粉末以达到烧结产品中所需的亚化学计量碳水平,或通过添加选自钨,二钨的碳的降低材料 碳化物和氧化钨。 任选地,其它材料可以存在于预成型体中,例如碳吸收剂金属及其化合物。 碳吸收剂金属是其碳化物比单碳化钨更具有热力学稳定性的金属。