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1. 发明申请

US20110226336A1 CHALCOGENIDE-BASED MATERIALS AND IMPROVED METHODS OF MAKING SUCH MATERIALS 有权
标题翻译：基于氯化铝的材料和改进的制造这种材料的方法
公开(公告)号：US20110226336A1
公开(公告)日：2011-09-22
申请号：US13047190
申请日：2011-03-14
申请人： Jennifer E. Gerbi , Marc G. Langlois , Robert T. Nilsson
发明人： Jennifer E. Gerbi , Marc G. Langlois , Robert T. Nilsson
IPC分类号： H01L31/0264 , C23C14/34 , C23C14/06 , G02F1/361
CPC分类号： H01L31/0749 , C23C14/0623 , C23C14/3464 , C23C14/5866 , H01L21/02568 , H01L21/02614 , H01L21/02631
摘要： The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.
摘要翻译：本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。当前体的全部或一部分具有其它结构的情况下，还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低，并且所得膜在膜的顶部或底部具有优化的Ga分布，其改善了使用该膜制备的光电装置的质量。

2. 发明授权

US08993882B2 Chalcogenide-based materials and improved methods of making such materials 有权
标题翻译：基于硫族化物的材料和制备这种材料的改进方法
公开(公告)号：US08993882B2
公开(公告)日：2015-03-31
申请号：US13047190
申请日：2011-03-14
申请人： Jennifer E. Gerbi , Marc G. Langlois , Robert T. Nilsson
发明人： Jennifer E. Gerbi , Marc G. Langlois , Robert T. Nilsson
IPC分类号： H01L31/0264 , H01L21/02 , C23C14/06 , C23C14/34 , C23C14/58
CPC分类号： H01L31/0749 , C23C14/0623 , C23C14/3464 , C23C14/5866 , H01L21/02568 , H01L21/02614 , H01L21/02631
摘要： The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices. Ga migration also is dramatically reduced, and the resultant films have optimized Ga profiles in the top or bottom portion of the film that improve the quality of photovoltaic devices made using the films.
摘要翻译：本发明提供了从含有亚化学计量量的硫族元素的前体膜制备高品质CIGS光吸收材料的策略。通过与前体的一种或多种其它组分的共溅射将硫族化合物并入到CIGS前体膜中。当前体的全部或一部分具有其它结构的情况下，还可以进行任选的退火以将前体转化为更理想的黄铜矿结晶形式。所得前体通常相对于硫属元素是亚化学计量的并且具有非常差的电子特性。通过硫属化处理将这些前体转化成CMS光吸收材料发生显着降低的界面空隙含量。所得到的CIGS材料在所得到的光伏器件中显示出对其它层的优异粘合性。 Ga迁移也显着降低，并且所得膜在膜的顶部或底部具有优化的Ga分布，其改善了使用该膜制备的光电装置的质量。

3. 发明授权

US08969720B2 Photoelectronically active, chalcogen-based thin film structures incorporating tie layers 有权
标题翻译：光电子活性的硫属元素薄膜结构
公开(公告)号：US08969720B2
公开(公告)日：2015-03-03
申请号：US13047139
申请日：2011-03-14
申请人： Jennifer E. Gerbi
发明人： Jennifer E. Gerbi
IPC分类号： H01L31/0272 , H01L21/02 , C23C14/06 , C23C14/34 , C23C14/58
CPC分类号： H01L31/0749 , C23C14/0623 , C23C14/3464 , C23C14/5866 , H01L21/02568 , H01L21/02614 , H01L21/02631
摘要： The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers.
摘要翻译：本发明提供了改进的含硫族元素的光伏结构以及相关组合物，结合这些结构的光伏器件，制造这些结构和器件的方法，以及使用这些结构和器件的方法。根据本发明的原理，通过使用含硫族元素的连结层，改善了PACB组合物的粘合性。

4. 发明申请

US20110253219A1 PHOTOELECTRONICALLY ACTIVE, CHALCOGEN-BASED THIN FILM STRUCTURES INCORPORATING TIE LAYERS 有权
标题翻译：光电激活，基于合成树脂的薄膜结构合成层
公开(公告)号：US20110253219A1
公开(公告)日：2011-10-20
申请号：US13047139
申请日：2011-03-14
申请人： Jennifer E. Gerbi
发明人： Jennifer E. Gerbi
IPC分类号： H01L31/0272 , H01L31/18
CPC分类号： H01L31/0749 , C23C14/0623 , C23C14/3464 , C23C14/5866 , H01L21/02568 , H01L21/02614 , H01L21/02631
摘要： The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers.
摘要翻译：本发明提供了改进的含硫族元素的光伏结构以及相关组合物，结合这些结构的光伏器件，制造这些结构和器件的方法，以及使用这些结构和器件的方法。根据本发明的原理，通过使用含硫族元素的连结层，改善了PACB组合物的粘合性。

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