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    • 3. 发明授权
    • MOS-transistor for a photo cell
    • 用于光电池的MOS晶体管
    • US06489658B2
    • 2002-12-03
    • US09337032
    • 1999-06-28
    • Harald RichterBernd HöfflingerUwe ApelUlrich Seger
    • Harald RichterBernd HöfflingerUwe ApelUlrich Seger
    • H01L2976
    • H01L27/14609
    • The invention relates to a MOS transistor for a photo cell, comprising a semiconductor substrate on which a gate electrode, a drain electrode and a photosensitive source region are configured. An oxide layer is arranged between the gate electrode and the substrate, and in the active region of the MOS transistor this oxide layer is formed as thin oxide film while it is configured as thick oxide film in a passive region. The inventive transistor is distinguished by the provisions that the gate electrode comprises a closed annular section in the active region of the MOS transistor, and that either the drain electrode or the photosensitive source region is arranged within the annular section of the gate electrode so that current will only flow in the active region.
    • 本发明涉及一种用于光电池的MOS晶体管,包括其上配置有栅电极,漏电极和感光源区的半导体衬底。 在栅电极和衬底之间设置氧化物层,在MOS晶体管的有源区中,氧化物层形成为氧化薄膜,同时被配置为被动区域中的厚氧化膜。 本发明的晶体管的特征在于栅电极包括在MOS晶体管的有源区中的封闭环形部分,漏极电极或光敏源区域设置在栅电极的环形部分内,使得电流 只会流入活跃区域。
    • 4. 发明授权
    • Method of producing large-area membrane masks
    • 生产大面积膜面膜的方法
    • US06455429B1
    • 2002-09-24
    • US09669469
    • 2000-09-25
    • Jörg ButschkeFlorian LetzkusElisabeth PentekerReinhard SpringerBernd HöfflingerHans Löschner
    • Jörg ButschkeFlorian LetzkusElisabeth PentekerReinhard SpringerBernd HöfflingerHans Löschner
    • H01L21302
    • G03F1/20G03F1/22
    • Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.
    • 提供了用于生产大面积膜掩模的本发明的方法,其中避免了膜或膜层/蚀刻停止层/支撑晶片系统上的不适当的机械过度应变或所得到的部件断裂,这种过度的应变发生 特别是由于使用蚀刻单元或通常由于薄的半导体层而导致。 半导体支撑层的剥离优选以机械密封的蚀刻池或保护涂层中进行的两个部分步骤进行,或者用蚀刻池和一个保护涂层进行一个部分步骤,或 半导体支撑层的剥离在最初具有支撑栅格的机械密封蚀刻池中执行,并且仅在从蚀刻单元退出之后才移除支撑栅。
    • 6. 发明授权
    • Method of and device for analog signal processing
    • 模拟信号处理的方法和设备
    • US06546147B1
    • 2003-04-08
    • US09341267
    • 1999-08-30
    • Uwe ApelBernd HöfflingerUlrich Seger
    • Uwe ApelBernd HöfflingerUlrich Seger
    • G06K940
    • G06T5/20
    • What is described here is a method of analog signal processing of video signals from picture elements arranged in an array, which are adapted for discrete scanning in terms of time, using a resistive network, the so-called electronic retina, having a two-dimensional field structure including a number of lines m smaller than the number of lines p of the picture element array, wherein the video signals are transmitted from the picture elements in the electronic retina by lines in such a manner that, starting with the first line of picture elements, the video signals are transmitted into the first line of said electronic retina until after the transmission of the video signals from the m-th line of the picture element arrays into the m-th line of said electronic retina the picture elements of the m+1st line of the picture element array are transmitted into the electronic retina, starting again with the first line, until the p-th line of the picture element array is transmitted in a roll-over manner into the electronic retina, and that between every two successive operations of roll-over transmission of video signals to said electronic retina the respective retina lines are read out via an independent signal line without any influence on the transmission operation.
    • 这里描述的是使用电阻网络(即所谓的电子视网膜)具有二维尺寸的模拟信号处理来自排列在阵列中的图像元素的视频信号的方法,其适于在时间上进行离散扫描 场结构,其包括小于像素阵列的行数p的行数m,其中视频信号以这样的方式从电子视网膜中的图像元素发送,使得从第一行图像开始 视频信号被发送到所述电子视网膜的第一行,直到将视频信号从像素阵列的第m行传输到所述电子视网膜的第m行,直到m 图像元素阵列的+ 1行被发送到电子视网膜,再次以第一行开始,直到图像元素阵列的第p行以roll-o 并且在将视频信号翻转传输到所述电子视网膜的每两次连续操作之间,通过独立的信号线读出各视网膜线,而不会对传输操作产生任何影响。