专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07808016B2 Heterogeneous integration of low noise amplifiers with power amplifiers or switches 有权
标题翻译：低噪声放大器与功率放大器或开关的非均匀集成
公开(公告)号：US07808016B2
公开(公告)日：2010-10-05
申请号：US11521011
申请日：2006-09-14
申请人： Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
发明人： Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
IPC分类号： H01L31/109
CPC分类号： H01L27/0605
摘要： A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate wafer having a first end and a second end, a conducting layer above the first end of the substrate wafer, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.
摘要翻译：一种将功率放大器或开关与具有选自由砷化镓（GaAs），磷酸铟（InP）和镓锑镓镓（GaSb））组成的组的衬底晶片的低噪声放大器非均匀地集成的晶体管，所述衬底晶片具有第一端以及第二端，在所述衬底晶片的所述第一端上方的导电层，在所述导电层中提供横向隔离的隔离植入物，沉积在所述导电层上方并被配置用于所述低噪声放大器的第一有源层，以及缓冲层沉积在导电层上方并配置用于低噪声放大器。

2. 发明申请

US20070145417A1 High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separation 审中-公开
标题翻译：具有侧向通道和增强的栅 - 漏分离的高电压半导体器件
公开(公告)号：US20070145417A1
公开(公告)日：2007-06-28
申请号：US11711340
申请日：2007-02-27
申请人： Berinder Brar , Wonill Ha , Mariam Sadaka , Chanh Nguyen
发明人： Berinder Brar , Wonill Ha , Mariam Sadaka , Chanh Nguyen
IPC分类号： H01L29/76
CPC分类号： H01L29/66462 , H01L29/4175 , H01L29/41766 , H01L29/7785
摘要： A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the isolation layer and a drain contact above the lateral channel. The semiconductor device further includes a gate located in a gate recess interposed between the lateral channel and the drain contact and a drain formed by at least one source/drain contact layer interposed between the lateral channel and the drain contact. The drain is offset on one side of the gate by a gate-to-drain separation distance. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the source contact and the lateral channel.
摘要翻译：一种具有在其相对表面上具有触点的横向通道的半导体器件。半导体器件包括具有覆盖其底表面的大部分的源极接触的导电基底。半导体器件还包括在导电衬底之上的隔离层，隔离层上方的横向沟道和横向沟道上方的漏极接触。所述半导体器件还包括位于所述横向沟道和所述漏极接触之间的栅极凹槽中的栅极和由介于所述侧向沟道和所述漏极接触之间的至少一个源极/漏极接触层形成的漏极。漏极在栅极到漏极间隔距离的一侧偏移。半导体器件还包括将横向沟道连接到导电衬底的互连，其可操作以在源极接触和侧向通道之间提供低电阻耦合。

3. 发明授权

US06414340B1 Field effect transistor and method for making the same 有权
公开(公告)号：US06414340B1
公开(公告)日：2002-07-02
申请号：US09434773
申请日：1999-11-04
申请人： Berinder Brar
发明人： Berinder Brar
IPC分类号： H01L31072
CPC分类号： H01L29/66462 , H01L29/1075 , H01L29/42316 , H01L29/7783
摘要： The field effect device consisting of a substrate, a conducting backplane formed in the substrate, a source and a drain disposed above the conductive backplane, a gate insultatively disposed above the substrate between the source and drain, and a backgate contact electrically coupled to the conducting backplane.

4. 发明授权

US07518165B2 Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs 有权
标题翻译：用于通孔兼容InAs / AlGaSb HEMT的外延成核和缓冲序列
公开(公告)号：US07518165B2
公开(公告)日：2009-04-14
申请号：US11521012
申请日：2006-09-14
申请人： Joshua I. Bergman , Berinder Brar , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
发明人： Joshua I. Bergman , Berinder Brar , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
IPC分类号： H01L29/06
CPC分类号： H01L29/7783 , H01L21/02392 , H01L21/02395 , H01L21/02398 , H01L21/02463 , H01L21/02466 , H01L21/02549 , H01L29/201 , H01L29/66462
摘要： A metamorphic high electron mobility transistor having a plurality of high electron mobility transistor layers, a semi-insulating substrate, a ternary metamorphic buffer layer positioned between the semi-insulating substrate and the plurality of high electron mobility transistor layers, the ternary metamorphic buffer layer being Al1-xGaxSb such that x is greater than or equal to 0.2 but less than 0.3, a stabilizing layer positioned between the ternary metamorphic buffer layer and the plurality of high electron mobility transistor layers, the stabilizing layer being Al1-yGaySb such that y is greater than 0.2 but less than or equal to 0.3 and y is greater than x, and a nucleation layer interposed between the semi-insulating substrate and the ternary metamorphic buffer layer.
摘要翻译：具有多个高电子迁移率晶体管层的变质高电子迁移率晶体管，半绝缘衬底，位于半绝缘衬底和多个高电子迁移率晶体管层之间的三元变质缓冲层，三元变质缓冲层为 Al1-xGaxSb，使得x大于或等于0.2但小于0.3，位于三元变质缓冲层和多个高电子迁移率晶体管层之间的稳定层，稳定层为Al1-yGaySb，使得y更大小于或等于0.3且y大于x，并且成核层插入在半绝缘衬底和三元变质缓冲层之间。

5. 发明申请

US20080048219A1 Semiconductor Device Having Substrate-Driven Field-Effect Transistor and Schottky Diode and Method of Forming the Same 有权
标题翻译：具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
公开(公告)号：US20080048219A1
公开(公告)日：2008-02-28
申请号：US11876581
申请日：2007-10-22
申请人： Berinder Brar , Wonill Ha
发明人： Berinder Brar , Wonill Ha
IPC分类号： H01L29/76 , H01L21/28
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate-driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate-driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate-driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
摘要翻译：一种包括具有横向沟道和平行耦合肖特基二极管的衬底驱动场效应晶体管的半导体器件及其形成方法。在一个实施例中，半导体器件的衬底驱动场效应晶体管包括具有覆盖其底表面的大部分的第一触点和导电衬底上方的横向沟道的导电衬底。衬底驱动场效应晶体管还包括位于横向沟道上方的第二接触件和将横向通道连接到导电衬底的互连件，可操作以在第一接触件和横向通道之间提供低电阻耦合。半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。

6. 发明申请

US20070069286A1 Semiconductor device having an interconnect with sloped walls and method of forming the same 失效
标题翻译：具有与倾斜壁相互连接的半导体器件及其形成方法
公开(公告)号：US20070069286A1
公开(公告)日：2007-03-29
申请号：US11236376
申请日：2005-09-27
申请人： Berinder Brar , Wonill Ha , James Vorhaus
发明人： Berinder Brar , Wonill Ha , James Vorhaus
IPC分类号： H01L29/76
CPC分类号： H01L29/41766 , H01L21/28575
摘要： A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.
摘要翻译：一种具有至少一个侧面通道的半导体器件及其相对表面上的触点及其形成方法。在一个实施例中，半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。半导体器件还包括在导电衬底上方的横向沟道。半导体器件还包括位于横向沟道上方的第二接触。半导体器件还包括具有将横向沟道连接到导电衬底的倾斜壁的互连。互连可操作以在第一接触和横向通道之间提供低电阻耦合。在相关但替代实施例中，第一触点是源触点，第二触点是用于半导体器件的漏极触点。

7. 发明申请

US20070045765A1 Semiconductor device having substrate-driven field-effect transistor and schottky diode and method of forming the same 有权
标题翻译：具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
公开(公告)号：US20070045765A1
公开(公告)日：2007-03-01
申请号：US11211964
申请日：2005-08-25
申请人： Berinder Brar , Wonill Ha
发明人： Berinder Brar , Wonill Ha
IPC分类号： H01L29/861 , H01L21/20
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a substrate driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
摘要翻译：一种包括具有横向沟道的衬底驱动场效应晶体管和并联肖特基二极管的半导体器件及其形成方法。在一个实施例中，半导体器件的衬底驱动场效应晶体管包括导电衬底，其具有覆盖其底表面的大部分的第一触点和导电衬底上的横向沟道。衬底驱动场效应晶体管还包括在横向沟道上方的第二接触和将横向通道连接到导电衬底的互连件，可操作以在第一接触件和横向通道之间提供低电阻耦合。半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。

8. 发明申请

US20060226478A1 Semiconductor device having a lateral channel and contacts on opposing surfaces thereof 有权
标题翻译：半导体器件具有横向通道并在其相对表面上接触
公开(公告)号：US20060226478A1
公开(公告)日：2006-10-12
申请号：US11094632
申请日：2005-03-29
申请人： Berinder Brar , Wonill Ha
发明人： Berinder Brar , Wonill Ha
IPC分类号： H01L29/76
CPC分类号： H01L29/66462 , H01L29/4175 , H01L29/41766 , H01L29/7785
摘要： A semiconductor device having a lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel.
摘要翻译：具有在其相对表面上具有触点的横向通道的半导体器件及其形成方法。在一个实施例中，半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。半导体器件还包括在导电衬底上方的横向沟道。半导体器件还包括位于横向沟道上方的第二接触。半导体器件还包括将横向沟道连接到导电衬底的互连。互连可操作以在第一接触和横向通道之间提供低电阻耦合。

9. 发明申请

US20050023643A1 Mechanically-stable BJT with reduced base-collector capacitance 有权
标题翻译：机械稳定的BJT具有降低的基极 - 集电极电容
公开(公告)号：US20050023643A1
公开(公告)日：2005-02-03
申请号：US10631380
申请日：2003-07-30
申请人： James Li , Richard Pierson , Berinder Brar , John Higgins
发明人： James Li , Richard Pierson , Berinder Brar , John Higgins
IPC分类号： H01L23/482 , H01L29/423 , H01L29/73 , H01L29/732 , H01L29/737 , H01L27/082
CPC分类号： H01L29/7317 , H01L23/4821 , H01L23/4822 , H01L24/01 , H01L29/42304 , H01L29/732 , H01L29/7371 , H01L2924/1305 , H01L2924/00
摘要： A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. Metal contacts are formed on the subcollector and emitter to provide collector and emitter terminals. Contact to the structure's base is accomplished with a metal contact which extends from the top of the support post to the edge of the base nearest the support post. The contact bridges the physical and electrical separation between the support post and the base and provides a base terminal for the device. The base contact need extend over the edge of the base by no more than the transfer length associated with the fabrication process. This results in the smaller base contact area over the collector than would otherwise be necessary, and a consequent reduction in base-collector capacitance. The invention is particularly useful when forming heterojunction bipolar transistors (HBTs), built on a compound semiconductor substrate such as indium phosphide (InP).
摘要翻译：双极结型晶体管（BJT）需要制造BJT结构和与BJT结构相邻但物理和电隔离的支撑柱。 BJT结构包括半绝缘衬底，子集电极，集电极，基极和发射极。金属触点形成在子集电极和发射极上，以提供集电极和发射极端子。与结构基座的接触是通过从支撑柱的顶部延伸到靠近支撑柱的基部边缘的金属接触来实现的。触点桥接支撑柱和基座之间的物理和电气分隔，并为设备提供基座。基底接触需要不超过与制造工艺相关联的传输长度在基底的边缘上延伸。这导致集电极上的基极接触面积比原来需要的更小，从而导致基极 - 集电极电容的降低。本发明在构建在诸如磷化铟（InP）的化合物半导体衬底上的异质结双极晶体管（HBT）时特别有用。

10. 发明申请

US20110143518A1 HETEROGENEOUS INTEGRATION OF LOW NOISE AMPLIFIERS WITH POWER AMPLIFIERS OR SWITCHES 审中-公开
公开(公告)号：US20110143518A1
公开(公告)日：2011-06-16
申请号：US13031997
申请日：2011-02-22
申请人： Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
发明人： Berinder Brar , Joshua I. Bergman , Amal Ikhlassi , Gabor Nagy , Gerard J. Sullivan
IPC分类号： H01L21/76
CPC分类号： H01L27/0605
摘要： A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate having a first end and a second end, a conducting layer above the first end of the substrate, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式