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1. 发明申请

US20070145417A1 High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separation 审中-公开
标题翻译：具有侧向通道和增强的栅 - 漏分离的高电压半导体器件
公开(公告)号：US20070145417A1
公开(公告)日：2007-06-28
申请号：US11711340
申请日：2007-02-27
申请人： Berinder Brar , Wonill Ha , Mariam Sadaka , Chanh Nguyen
发明人： Berinder Brar , Wonill Ha , Mariam Sadaka , Chanh Nguyen
IPC分类号： H01L29/76
CPC分类号： H01L29/66462 , H01L29/4175 , H01L29/41766 , H01L29/7785
摘要： A semiconductor device having a lateral channel with contacts on opposing surfaces thereof. The semiconductor device includes a conductive substrate having a source contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes an isolation layer above the conductive substrate, a lateral channel above the isolation layer and a drain contact above the lateral channel. The semiconductor device further includes a gate located in a gate recess interposed between the lateral channel and the drain contact and a drain formed by at least one source/drain contact layer interposed between the lateral channel and the drain contact. The drain is offset on one side of the gate by a gate-to-drain separation distance. The semiconductor device still further includes an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the source contact and the lateral channel.
摘要翻译：一种具有在其相对表面上具有触点的横向通道的半导体器件。半导体器件包括具有覆盖其底表面的大部分的源极接触的导电基底。半导体器件还包括在导电衬底之上的隔离层，隔离层上方的横向沟道和横向沟道上方的漏极接触。所述半导体器件还包括位于所述横向沟道和所述漏极接触之间的栅极凹槽中的栅极和由介于所述侧向沟道和所述漏极接触之间的至少一个源极/漏极接触层形成的漏极。漏极在栅极到漏极间隔距离的一侧偏移。半导体器件还包括将横向沟道连接到导电衬底的互连，其可操作以在源极接触和侧向通道之间提供低电阻耦合。

2. 发明申请

US20080054304A1 Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode 有权
公开(公告)号：US20080054304A1
公开(公告)日：2008-03-06
申请号：US11866259
申请日：2007-10-02
申请人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
发明人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
IPC分类号： H01L31/0328
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

3. 发明申请

US20080048174A1 Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode 有权
标题翻译：包括横向场效应晶体管和肖特基二极管的半导体器件
公开(公告)号：US20080048174A1
公开(公告)日：2008-02-28
申请号：US11866270
申请日：2007-10-02
申请人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
发明人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
IPC分类号： H01L29/15
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
摘要翻译：包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。在一个实施例中，横向场效应晶体管包括缓冲层，该缓冲层具有覆盖其底表面的大部分的接触，缓冲层上方的横向通道，横向通道上方的另一接触件以及将侧向通道到缓冲层。半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管，该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极，插入另一个缓冲层和另一个触点之间的肖特基互连，以及形成在所述肖特基互连件的表面上的阳极，其可操作以将所述阳极连接到所述另一个触点。半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。

4. 发明申请

US20080048173A1 Semiconductor Device Including a Lateral Field-Effect Transistor and Schottky Diode 有权
公开(公告)号：US20080048173A1
公开(公告)日：2008-02-28
申请号：US11866249
申请日：2007-10-02
申请人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
发明人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
IPC分类号： H01L29/15
CPC分类号： H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/20 , H01L29/66462 , H01L29/7783 , H01L29/872
摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.

5. 发明申请

US20070187717A1 Semiconductor device having reduced on-resistance and method of forming the same 有权
标题翻译：具有降低的导通电阻的半导体器件及其形成方法
公开(公告)号：US20070187717A1
公开(公告)日：2007-08-16
申请号：US11732301
申请日：2007-04-03
申请人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
发明人： Mariam Sadaka , Berinder Brar , Wonill Ha , Chanh Nguyen
IPC分类号： H01L31/00 , H01L21/336
CPC分类号： H01L29/1029 , H01L21/6835 , H01L29/1083 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7783 , H01L29/7785 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.
摘要翻译：一种半导体器件及其制造方法。半导体器件包括外延生长和导电缓冲层，其具有覆盖其底表面的大部分的接触和缓冲层上方的横向通道。半导体器件还包括在横向通道上方的另一接触件和将横向通道连接到缓冲层的互连件，可操作以在触头和横向通道之间提供低电阻耦合。

6. 发明授权

US08980688B2 Semiconductor structures including fluidic microchannels for cooling and related methods 有权
标题翻译：包括用于冷却的流体微通道的半导体结构及相关方法
公开(公告)号：US08980688B2
公开(公告)日：2015-03-17
申请号：US13536034
申请日：2012-06-28
申请人： Mariam Sadaka
发明人： Mariam Sadaka
IPC分类号： H01L21/00
CPC分类号： H01L23/49827 , B01L3/502707 , B01L2300/0864 , B01L2300/0867 , B01L2300/0874 , B01L2300/0887 , H01L21/2007 , H01L23/367 , H01L23/46 , H01L23/473 , H01L23/49822 , H01L24/14 , H01L24/16 , H01L27/0688 , H01L27/1203 , H01L2224/13011 , H01L2224/13025 , H01L2224/131 , H01L2224/14051 , H01L2224/14505 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/17519 , H01L2224/73204 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2924/0002 , H01L2924/12041 , H01L2924/00 , H01L2924/00014
摘要： Semiconductor structures are fabricated that include a semiconductor material bonded to a substrate with a layer of dielectric material between the semiconductor material and the substrate. At least one fluidic microchannel extends in a lateral direction through the layer of dielectric material between the semiconductor material and the substrate. The at least one fluidic microchannel includes at least one laterally extending section having a transverse cross-sectional shape entirely surrounded by the layer of dielectric material.
摘要翻译：制造半导体结构，其包括在半导体材料和衬底之间具有电介质材料层的衬底上结合的半导体材料。至少一个流体微通道在横向方向上延伸穿过半导体材料和衬底之间的介电材料层。所述至少一个流体微通道包括至少一个横向延伸部分，其横截面形状完全由电介质材料层包围。

7. 发明授权

US08890299B2 Bonded semiconductor structures and methods of forming same 有权
标题翻译：粘合半导体结构及其形成方法
公开(公告)号：US08890299B2
公开(公告)日：2014-11-18
申请号：US13575200
申请日：2011-01-26
申请人： Mariam Sadaka , Radu Ionut
发明人： Mariam Sadaka , Radu Ionut
IPC分类号： H01L23/02 , H01L25/00 , H01L21/3105 , H01L23/00
CPC分类号： H01L24/02 , H01L21/3105 , H01L21/31053 , H01L24/03 , H01L24/05 , H01L24/80 , H01L25/50 , H01L2224/0401 , H01L2224/80896 , H01L2224/81894 , H01L2224/83894 , H01L2224/83896 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： Embodiments of the invention include methods and structures for fabricating a semiconductor structure and, particularly, for improving the planarity of a bonded semiconductor structure comprising a processed semiconductor structure and a semiconductor structure.
摘要翻译：本发明的实施例包括用于制造半导体结构的方法和结构，特别是用于改善包括处理的半导体结构和半导体结构的键合半导体结构的平面性。

8. 发明授权

US08778773B2 Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods 有权
标题翻译：用于将半导体结构直接接合在一起的方法以及使用这种方法形成的结合的半导体结构
公开(公告)号：US08778773B2
公开(公告)日：2014-07-15
申请号：US12970422
申请日：2010-12-16
申请人： Mariam Sadaka
发明人： Mariam Sadaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76849 , H01L21/76826 , H01L21/76829 , H01L21/76856 , H01L21/76867 , H01L21/76883 , H01L21/76886 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2224/0239 , H01L2224/03444 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03464 , H01L2224/0381 , H01L2224/0384 , H01L2224/0508 , H01L2224/05124 , H01L2224/05147 , H01L2224/05164 , H01L2224/05186 , H01L2224/05187 , H01L2224/05547 , H01L2224/05571 , H01L2224/05638 , H01L2224/05647 , H01L2224/05657 , H01L2224/05687 , H01L2224/08121 , H01L2224/08147 , H01L2224/08501 , H01L2224/0903 , H01L2224/80121 , H01L2224/802 , H01L2224/80203 , H01L2224/80357 , H01L2224/80894 , H01L2224/80895 , H01L2224/80896 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/14 , H01L2924/01014 , H01L2924/0509 , H01L2224/05157 , H01L2924/0105 , H01L2924/01015 , H01L2924/04941 , H01L2924/04953 , H01L2924/01025 , H01L2924/05042 , H01L2924/04642 , H01L2924/05442 , H01L2224/05552 , H01L2924/00
摘要： Embodiments of the present invention include methods of directly bonding together semiconductor structures. In some embodiments, a cap layer may be provided at an interface between directly bonded metal features of the semiconductor structures. In some embodiments, impurities are provided within the directly bonded metal features of the semiconductor structures. Bonded semiconductor structures are formed using such methods.
摘要翻译：本发明的实施例包括将半导体结构直接结合在一起的方法。在一些实施例中，盖层可以设置在半导体结构的直接结合的金属特征之间的界面处。在一些实施例中，在半导体结构的直接结合的金属特征内提供杂质。使用这种方法形成结合的半导体结构。

9. 发明授权

US08617925B2 Methods of forming bonded semiconductor structures in 3D integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods 有权
标题翻译：在使用可恢复基板的3D积分处理中形成键合半导体结构的方法以及通过这些方法形成的结合的半导体结构
公开(公告)号：US08617925B2
公开(公告)日：2013-12-31
申请号：US13206280
申请日：2011-08-09
申请人： Mariam Sadaka , Bich-Yen Nguyen
发明人： Mariam Sadaka , Bich-Yen Nguyen
IPC分类号： H01L23/538 , H01L21/58 , H01L21/768
CPC分类号： H01L21/486 , H01L21/561 , H01L21/6835 , H01L21/76898 , H01L23/147 , H01L23/49827 , H01L24/06 , H01L24/08 , H01L24/80 , H01L24/97 , H01L25/0652 , H01L25/50 , H01L2221/68345 , H01L2224/05009 , H01L2224/08146 , H01L2224/08235 , H01L2224/80099 , H01L2224/80203 , H01L2224/80895 , H01L2224/80896 , H01L2224/9202 , H01L2224/97 , H01L2225/06541 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/1461 , H01L2924/15311 , H01L2924/1816 , H01L2224/80 , H01L2224/03 , H01L2924/00
摘要： Methods of forming bonded semiconductor structures include forming through wafer interconnects through a layer of material of a first substrate structure, bonding one or more semiconductor structures over the layer of material, and electrically coupling the semiconductor structures with the through wafer interconnects. A second substrate structure may be bonded over the processed semiconductor structures on a side thereof opposite the first substrate structure. A portion of the first substrate structure then may be removed, leaving the layer of material with the through wafer interconnects therein attached to the processed semiconductor structures. At least one through wafer interconnects then may be electrically coupled to a conductive feature of another structure, after which the second substrate structure may be removed. Bonded semiconductor structures are formed using such methods.
摘要翻译：形成键合的半导体结构的方法包括通过晶片互连通过第一衬底结构的材料层形成，在材料层上结合一个或多个半导体结构，以及将半导体结构与贯穿晶片互连电连接。第二衬底结构可以在与第一衬底结构相对的一侧上结合在经处理的半导体结构上。然后可以去除第一衬底结构的一部分，留下其中附着有经处理的半导体结构的贯穿晶片互连的材料层。然后至少一个贯穿晶片互连可以电耦合到另一结构的导电特征，之后可以去除第二衬底结构。使用这种方法形成结合的半导体结构。

10. 发明申请

US20130214423A1 METHODS FOR FABRICATION OF SEMICONDUCTOR STRUCTURES INCLUDING INTERPOSERS WITH CONDUCTIVE VIAS, AND RELATED STRUCTURES AND DEVICES 有权
标题翻译：用于制造包括导电VIAS的间隔器的半导体结构的方法以及相关的结构和器件
公开(公告)号：US20130214423A1
公开(公告)日：2013-08-22
申请号：US13397954
申请日：2012-02-16
申请人： Mariam Sadaka
发明人： Mariam Sadaka
IPC分类号： H01L23/522 , H01L21/762
CPC分类号： H01L21/486 , H01L21/6835 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L2221/68318 , H01L2221/68327 , H01L2221/68363 , H01L2221/68381 , H01L2224/16
摘要： Methods of fabricating semiconductor devices that include interposers include the formation of conductive vias through a material layer on a recoverable substrate. A carrier substrate is bonded over the material layer, and the recoverable substrate is then separated from the material layer to recover the recoverable substrate. A detachable interface may be provided between the material layer and the recoverable substrate to facilitate the separation. Electrical contacts that communicate electrically with the conductive vias may be formed over the material layer on a side thereof opposite the carrier substrate. Semiconductor structures and devices are formed using such methods.
摘要翻译：制造包括插入件的半导体器件的方法包括通过可恢复衬底上的材料层形成导电通孔。载体衬底接合在材料层上，然后将可回收衬底与材料层分离以回收可回收衬底。可以在材料层和可回收衬底之间设置可拆卸界面，以便于分离。与导电通孔电连通的电触点可以在与载体衬底相对的一侧上的材料层上形成。使用这种方法形成半导体结构和器件。

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