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    • 1. 发明申请
    • ANGLED MULTI-STEP MASKING FOR PATTERNED IMPLANTATION
    • 用于图形植入的多边形掩模
    • US20120214273A1
    • 2012-08-23
    • US13029840
    • 2011-02-17
    • Benjamin RiordonNicholas BatemanAtul Gupta
    • Benjamin RiordonNicholas BatemanAtul Gupta
    • H01L21/265
    • H01L21/26586H01L21/266H01L31/068H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.
    • 公开了一种倾斜掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 掩模和基底相对于入射离子束以第一角度倾斜。 在衬底暴露于离子束之后,掩模和衬底相对于离子束以第二角度倾斜,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,掩模的横截面,掩模和衬底之间的距离以及植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。
    • 4. 发明授权
    • Angled multi-step masking for patterned implantation
    • 用于图案化植入的角度多步骤掩模
    • US08765583B2
    • 2014-07-01
    • US13029840
    • 2011-02-17
    • Benjamin RiordonNicholas BatemanAtul Gupta
    • Benjamin RiordonNicholas BatemanAtul Gupta
    • H01L21/331H01L21/425H01L21/265
    • H01L21/26586H01L21/266H01L31/068H01L31/0682H01L31/1804Y02E10/547Y02P70/521
    • An improved method of tilting a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. The mask and substrate are tilted at a first angle relative to the incoming ion beam. After the substrate is exposed to the ion beam, the mask and substrate are tilted at a second angle relative to the ion beam and a subsequent implant step is performed. Through the selection of the aperture size and shape, the cross-section of the mask, the distance between the mask and the substrate and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions.
    • 公开了一种倾斜掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 掩模和基底相对于入射离子束以第一角度倾斜。 在衬底暴露于离子束之后,掩模和衬底相对于离子束以第二角度倾斜,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,掩模的横截面,掩模和衬底之间的距离以及植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。