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1. 发明授权

US07102017B2 Processes to prepare small molecular thiophene compounds 有权
标题翻译：制备小分子噻吩化合物的方法
公开(公告)号：US07102017B2
公开(公告)日：2006-09-05
申请号：US10865029
申请日：2004-06-10
申请人： Ping Liu , Yiliang Wu , Beng S. Ong , Maria Birau
发明人： Ping Liu , Yiliang Wu , Beng S. Ong , Maria Birau
IPC分类号： C07D409/00
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0068 , H01L51/0541 , H01L51/0545
摘要： A process composed of subjecting a reaction mixture comprising a reaction medium, a coupling agent, and a precursor to a coupling temperature to preferentially form a desired small molecular thiophene compound in a single-step synthesis, wherein the precursor consists of: (i) an optional divalent linkage, and (ii) a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position.
摘要翻译：一种方法是将包含反应介质，偶联剂和前体的反应混合物与偶合温度进行反应，以在单步合成中优先形成所需的小分子噻吩化合物，其中前体由以下物质组成：（i）任选的二价键，和（ii）多个噻吩单元，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置中的任一个或两个结合。

2. 发明授权

US07312469B2 Device with small molecular thiophene compound 有权
标题翻译：具有小分子噻吩化合物的装置
公开(公告)号：US07312469B2
公开(公告)日：2007-12-25
申请号：US10865445
申请日：2004-06-10
申请人： Beng S. Ong , Ping Liu , Maria Birau , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Maria Birau , Yiliang Wu
IPC分类号： H01L35/24
CPC分类号： H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit.
摘要翻译：一种电子器件，包括与多个电极接触的半导体层，其中所述半导体层包括由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元以第二环位置和第五环位置中的任一个或两个，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置处，或者在第三环位置处环位置和第四环位置，其中对于任何两个相邻的噻吩单元，排除了在一个噻吩单元的3位和3'位上同时存在相同或不同的R 1' 其他噻吩单元的位置。

3. 发明授权

US07705346B2 Barrier layer for an organic electronic device 失效
标题翻译：有机电子设备的屏障层
公开(公告)号：US07705346B2
公开(公告)日：2010-04-27
申请号：US11145701
申请日：2005-06-06
申请人： Mihaela Maria Birau , Yu Qi , Yiliang Wu , Beng S. Ong
发明人： Mihaela Maria Birau , Yu Qi , Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/05
CPC分类号： H01L51/0096 , H01L51/0512 , Y02E10/549
摘要： A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, oxygen and/or moisture is described. The barrier layer comprises a polymer, an antioxidant, and an inorganic particulate material.
摘要翻译：描述了保护电子设备免受诸如暴露于光，氧和/或水分的不利环境影响的新颖的阻挡层。阻挡层包括聚合物，抗氧化剂和无机颗粒材料。

4. 发明授权

US07345303B2 Organic thin-film transistors 失效
标题翻译：有机薄膜晶体管
公开(公告)号：US07345303B2
公开(公告)日：2008-03-18
申请号：US11315044
申请日：2005-12-22
申请人： Mihaela Maria Birau , Yiliang Wu , Beng S. Ong
发明人： Mihaela Maria Birau , Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/00
CPC分类号： H01L51/10 , H01L51/0545 , H01L51/107
摘要： A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, especially white light, is described. The barrier layer comprises a copolymer having an acrylate unit and an acrylate unit with a pendant dye group. Also disclosed are processes for producing such electronic devices.
摘要翻译：描述了保护电子设备免受诸如曝光，特别是白光等不利环境影响的新颖的阻挡层。阻挡层包括具有丙烯酸酯单元和具有侧基染料基团的丙烯酸酯单元的共聚物。还公开了用于生产这种电子装置的方法。

5. 发明申请

US20110034668A1 ELECTRONIC DEVICES 有权
标题翻译：电子设备
公开(公告)号：US20110034668A1
公开(公告)日：2011-02-10
申请号：US12907357
申请日：2010-10-19
申请人： Beng S. Ong , Hualong Pan , Yuning Li , Yiliang Wu , Ping Liu
发明人： Beng S. Ong , Hualong Pan , Yuning Li , Yiliang Wu , Ping Liu
IPC分类号： C08G75/06
CPC分类号： H01L51/0036 , C08G61/126 , H01L51/0541 , H01L51/0545
摘要： An electronic device, such as a thin film transistor containing a semiconductor of the Formula: wherein R, R′ and R″ are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.
摘要翻译：一种电子器件，例如含有下式的半导体的薄膜晶体管：其中R，R'和R“例如独立地为氢，合适的烃，合适的含杂基团，卤素或其混合物 ; n表示重复单元的数量。

6. 发明申请

US20100230670A1 DEVICE CONTAINING COMPOUND HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE 有权
标题翻译：含有吲哚卡拉唑环的化合物的装置和多个连接
公开(公告)号：US20100230670A1
公开(公告)日：2010-09-16
申请号：US12791928
申请日：2010-06-02
申请人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
发明人： Yuning Li , Beng S. Ong , Yiliang Wu , Ping Liu
IPC分类号： H01L51/30 , C07D487/02
CPC分类号： C08G61/124 , C08G61/126
摘要： An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
摘要翻译：包括包含至少一种类型的任选取代的吲哚咔唑部分和至少一种二价键的化合物的电子器件。

7. 发明授权

US07781564B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US07781564B2
公开(公告)日：2010-08-24
申请号：US11565751
申请日：2006-12-01
申请人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
发明人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
IPC分类号： C08G75/06 , H01L35/24 , H01L51/40
CPC分类号： H01B1/127 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要翻译：聚噻吩，其中单体链段含有其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5，并且二价键D的数目为0或1。

8. 发明授权

US07449715B2 Poly[bis(ethynyl)heteroacene]s and electronic devices generated therefrom 有权
标题翻译：聚[双（乙炔基）异亚丙基]和由其生成的电子器件
公开(公告)号：US07449715B2
公开(公告)日：2008-11-11
申请号：US11399231
申请日：2006-04-06
申请人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
发明人： Yuning Li , Ping Liu , Yiliang Wu , Beng S. Ong
IPC分类号： H01L29/08
CPC分类号： H01L51/0074 , H01L51/0036 , H01L51/0073 , H01L51/0545
摘要： An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.
摘要翻译：一种包含式或其结构（I）的聚合物的电子器件，其中R 1是氢，卤素，合适的烃或含杂原子的基团; R 2是氢，适合的烃，含杂原子的基团或卤素; R 3和R 4独立地是合适的烃，氢，含杂原子的基团或卤素; Ar是芳香族成分; x，y，a，b和c分别表示基团或环的数目; Z表示硫，氧，硒或NR，其中R是氢，烷基或芳基; n表示重复单元的数量。

9. 发明授权

US07256418B2 Polythiophenes and devices thereof 有权
标题翻译：聚噻吩及其装置
公开(公告)号：US07256418B2
公开(公告)日：2007-08-14
申请号：US10231841
申请日：2002-08-29
申请人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
发明人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
IPC分类号： H01L35/24
CPC分类号： H01B1/127 , C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.
摘要翻译：含有衍生自单体链段的聚噻吩的电子装置或含有两个2,5-亚噻吩基链段（I）和（II）的单体链段和任选的二价键D，其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5，并且二价键D的数目为0或1。

10. 发明授权

US07170093B2 Dielectric materials for electronic devices 有权
标题翻译：用于电子设备的电介质材料
公开(公告)号：US07170093B2
公开(公告)日：2007-01-30
申请号：US10982472
申请日：2004-11-05
申请人： Yiliang Wu , Beng S. Ong , Ping Liu
发明人： Yiliang Wu , Beng S. Ong , Ping Liu
IPC分类号： H01L29/04
CPC分类号： H01L23/5329 , H01L51/0036 , H01L51/0537 , H01L51/0541 , H01L51/0545 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.
摘要翻译：本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层。

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