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1. 发明申请

US20130200039A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS 审中-公开
标题翻译：含有N-取代的二氧化二氮和/或氮氧化二氧化锡钠的水性抛光组合物
公开(公告)号：US20130200039A1
公开(公告)日：2013-08-08
申请号：US13821759
申请日：2011-09-06
申请人： Bastian Noller , Diana Franz , Yuzhuo Li , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder , Shyam Sundar Venkataraman
发明人： Bastian Noller , Diana Franz , Yuzhuo Li , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder , Shyam Sundar Venkataraman
IPC分类号： C09K13/00
CPC分类号： C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N′-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
摘要翻译：一种水性抛光组合物，其包含（A）至少一种选自N-取代的二氮化二氮化物和N'-羟基 - 二氮化鎓盐的水溶性或水分散性化合物; 和（B）至少一种类型的磨料颗粒; 化合物（A）用于制造电气，机械和光学装置的使用以及利用水性抛光组合物研磨用于电气，机械和光学装置的基材的方法。

2. 发明申请

US20130200038A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES 审中-公开
标题翻译：用于电气，机械和光学设备的化学机械抛光基材的水性抛光组合物和方法
公开(公告)号：US20130200038A1
公开(公告)日：2013-08-08
申请号：US13820765
申请日：2011-09-06
申请人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder
发明人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder
IPC分类号： C09K13/00
CPC分类号： C09K13/00 , C08L33/24 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices.
摘要翻译：一种pH为3至11的水性抛光组合物，其包含（A）分散在不含组分（B）的水性介质中并带有电荷迁移率证明的pH为3至9的带正电荷的磨料颗粒; （B）阴离子磷酸盐分散剂; 和（C）选自（c1）具有至少4个羟基的（c1）水溶性和水分散性，脂族和脂环族，单体，二聚和低聚多元醇的多元醇组分; （c2）由具有至少2个羟基的（c21）水溶性和水分散性脂族和脂环族多元醇组成的混合物; 和（c22）选自直链和支链烯化氧均聚物和共聚物（c221）的水溶性或水分散性聚合物; 和直链和支链的脂族和脂环族聚（N-乙烯基酰胺）均聚物和共聚物（c222）; 和（c3）（c1）和（c2）的混合物; 以及用于抛光电气，机械和光学装置的基板的方法。

3. 发明申请

US20130161285A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATE MATERIALS FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES 审中-公开
标题翻译：电动，机械和光学装置的化学抛光组合物和化学机械抛光基材的方法
公开(公告)号：US20130161285A1
公开(公告)日：2013-06-27
申请号：US13821757
申请日：2011-09-06
申请人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder
发明人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Sheik Ansar Usman Ibrahim , Harvey Wayne Pinder
IPC分类号： C09G1/02
CPC分类号： C09K3/1409 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.
摘要翻译：一种水性抛光组合物，其包含（A）当分散在pH为3至9范围内的电泳迁移率证明的水性介质中时带正电的磨料颗粒; （B）选自（b1）脂族和脂环族羟基羧酸的水溶性和水分散性羟基的组分，其中羟基与羧酸基团的摩尔比至少为1; （b2）具有至少一个羟基的羟基羧酸（b1）的酯和内酯; 和（b3）它们的混合物; 和（C）选自（c1）直链和支链烯化氧聚合物的水溶性和水分散性聚合物组分; （c2）直链和支链脂族和脂环族聚（N-乙烯基酰胺）聚合物; 和（c3）重均分子量小于100,000道尔顿的阳离子聚合物絮凝剂; 以及用于研磨电气，机械和光学装置的基板材料的方法。

4. 发明授权

US09487675B2 Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives 有权
标题翻译：包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物
公开(公告)号：US09487675B2
公开(公告)日：2016-11-08
申请号：US14362510
申请日：2011-12-21
申请人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
发明人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
IPC分类号： H01L21/302 , H01L21/461 , C09K13/00 , C09G1/04 , C09G1/00 , C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/306
CPC分类号： C09G1/04 , C09G1/00 , C09G1/02 , C09K3/1463 , C09K13/00 , H01L21/302 , H01L21/30625 , H01L21/31053 , H01L21/461
摘要： A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(OR2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式为侧基，其中R 1为烷基，芳基，烷基芳基或芳基烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

5. 发明申请

US20150159050A1 CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING POLYVINYL PHOSPHONIC ACID AND ITS DERIVATIVES 有权
标题翻译：包含聚乙烯磷酸及其衍生物的化学机械抛光组合物
公开(公告)号：US20150159050A1
公开(公告)日：2015-06-11
申请号：US14362510
申请日：2011-12-21
申请人： Vijay Immanuel Raman , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
发明人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
IPC分类号： C09G1/04 , H01L21/306
CPC分类号： C09G1/04 , C09G1/00 , C09G1/02 , C09K3/1463 , C09K13/00 , H01L21/302 , H01L21/30625 , H01L21/31053 , H01L21/461
摘要： A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(0R2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式作为侧基，其中R 1是烷基，芳基，烷基芳基或芳基烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

6. 发明申请

US20130171824A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS 审中-公开
标题翻译：用于化学机械抛光含有氧化硅电介质膜和多晶硅和/或氮化硅膜的衬底的方法
公开(公告)号：US20130171824A1
公开(公告)日：2013-07-04
申请号：US13821769
申请日：2011-09-06
申请人： Yuzhuo Li , Shyam Sundar Venkataraman , Harvey Wayne Pinder
发明人： Yuzhuo Li , Shyam Sundar Venkataraman , Harvey Wayne Pinder
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , B24B37/044 , C09G1/02 , C09K3/1463 , C11D3/14 , C11D3/3707 , C11D3/3723 , C11D3/3773 , C11D3/3776 , C11D7/20 , C11D11/0047 , H01L21/31053
摘要： CMP process for substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films comprising the steps of (1) contacting the substrate with an aqueous composition containing (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9; (B) a water-soluble or water-dispersible linear or branched alkylene oxide homopolymer or copolymer; and (C) a water-soluble or water-dispersible polymer selected from (c1) aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers, (c2) homopolymers and copolymers of acrylamide monomers of the general formulas I and II: H2C═C(—R)—C(=0)-N(—R1)(—R2) (I), H2C═C(—R)—C(=0)-R3 (II), wherein the variables have the following meaning R hydrogen atom, fluorine atom, chlorine atom, nitrile group, or organic residue; R1 and R2 hydrogen atom or organic residue; R3 saturated N-heterocyclic ring; (c3) cationic polymeric flocculants; and (c4) mixtures thereof; (2) polishing the substrate until the silicon oxide dielectric film is removed and the polysilicon and/or silicon nitride film is or are exposed exposed.
摘要翻译：用于含有氧化硅介电膜和多晶硅和/或氮化硅膜的衬底的CMP工艺包括以下步骤：（1）使基底与含有（A）当分散在具有pH的水性介质中带正电的磨料颗粒的水性组合物接触时在3至9的范围内; （B）水溶性或水分散性直链或支链烯化氧均聚物或共聚物; 和（C）选自（c1）脂族和脂环族聚（N-乙烯基酰胺）均聚物和共聚物的水溶性或水分散性聚合物，（c2）通式I和II的丙烯酰胺单体的均聚物和共聚物：H 2 C = C（-R）-C（= O）-N（-R 1）（ - R 2）（I），H 2 C = C（-R）-C（= O）-R 3（II）意指R氢原子，氟原子，氯原子，腈基或有机残基; R1和R2氢原子或有机残基; R3饱和N-杂环; （c3）阳离子聚合物絮凝剂; 和（c4）它们的混合物; （2）研磨衬底直到去除氧化硅介电膜，并且暴露多晶硅和/或氮化硅膜。

7. 发明申请

US20130168348A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS 审中-公开
标题翻译：含有氧化硅介电和多晶硅膜的化学机械抛光底材的水性抛光组合物和工艺
公开(公告)号：US20130168348A1
公开(公告)日：2013-07-04
申请号：US13821746
申请日：2011-09-05
申请人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Wei Lan William Chiu , Harvey Wayne Pinder
发明人： Yuzhuo Li , Jea-Ju Chu , Shyam Sundar Venkataraman , Wei Lan William Chiu , Harvey Wayne Pinder
IPC分类号： C09K13/00
CPC分类号： C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.
摘要翻译：已经发现水性抛光组合物，所述水性抛光组合物包含（A）至少一种在分散在不含组分（B）的水性介质中并带有pH范围为3 至9，如电泳迁移率所证明; （B）至少一种选自直链和支链烯化氧均聚物和共聚物的水溶性聚合物; 和（C）至少一种阴离子磷酸盐分散剂; 以及利用水性抛光组合物研磨用于电气，机械和光学装置的基底材料的方法。

8. 发明授权

US09263296B2 Chemical mechanical polishing (CMP) composition comprising two types of corrosion inhibitors 有权
标题翻译：包含两种类型的腐蚀抑制剂的化学机械抛光（CMP）组合物
公开(公告)号：US09263296B2
公开(公告)日：2016-02-16
申请号：US14006744
申请日：2012-03-19
申请人： Bastian Noller , Michael Lauter , Albert Budiman Sugiharto , Yuzhuo Li , Kenneth Rushing , Diana Franz , Roland Böhn
发明人： Bastian Noller , Michael Lauter , Albert Budiman Sugiharto , Yuzhuo Li , Kenneth Rushing , Diana Franz , Roland Böhn
IPC分类号： H01L21/321 , C09G1/04 , C09G1/02 , H01L21/306 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/30625
摘要： A chemical-mechanical polishing (“CMP”) composition (P) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of A/-heterocyclic compound as corrosion inhibitor, (C) at least one type of a further corrosion inhibitor selected from the group consisting of: (C1) an acetylene alcohol, and (C2) a salt or an adduct of (C2a) an amine, and (C2b) a carboxylic acid comprising an amide moiety, (D) at least one type of an oxidizing agent, (E) at least one type of a complexing agent, and (F) an aqueous medium.
摘要翻译：包含（A）无机颗粒，有机颗粒或其混合物或复合物的化学机械抛光（“CMP”）组合物（P），（B）至少一种作为防腐剂的A / ）至少一种类型的另外的腐蚀抑制剂，其选自：（C1）炔属醇和（C2）（C2a）胺的盐或加合物，和（C2b）包含酰胺的羧酸部分，（D）至少一种类型的氧化剂，（E）至少一种类型的络合剂，和（F）水性介质。

9. 发明授权

US09255214B2 Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles 有权
标题翻译：包含无机颗粒和聚合物颗粒的化学机械抛光（CMP）组合物
公开(公告)号：US09255214B2
公开(公告)日：2016-02-09
申请号：US13503753
申请日：2010-11-10
申请人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
发明人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
IPC分类号： H01L21/76 , C09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

10. 发明申请

US20120208344A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING INORGANIC PARTICLES AND POLYMER PARTICLES 有权
标题翻译：化学机械抛光（CMP）包含无机颗粒和聚合物颗粒的组合物
公开(公告)号：US20120208344A1
公开(公告)日：2012-08-16
申请号：US13503753
申请日：2010-11-10
申请人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
发明人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
IPC分类号： H01L21/76 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

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