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    • 3. 发明申请
    • METHOD OF FORMING MICROMACHINED FLUID EJECTORS USING PIEZOELECTRIC ACTUATION
    • 使用压电致动法形成微流体流化床的方法
    • US20090070975A1
    • 2009-03-19
    • US12273573
    • 2008-11-19
    • Baomin XuSteven A. BuhlerStephen D. WhiteScott Jong Ho Limb
    • Baomin XuSteven A. BuhlerStephen D. WhiteScott Jong Ho Limb
    • H01L41/22B41J2/045
    • B41J2/14233B41J2/161B41J2/1623B41J2/1628B41J2/1629B41J2/1634B41J2/1639B41J2/1642B41J2/1643B41J2/1646B41J2002/14475Y10T29/42Y10T29/49401
    • A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.
    • 形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽,并用牺牲材料填充凹槽。 在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。 然后,薄膜压电体被结合或沉积到薄层结构上,并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。 牺牲材料从凹槽中移除,其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。 硅晶片的开口区域形成在硅晶片的第二侧上。 然后形成在凹部内具有凹部和孔的喷嘴板。 喷嘴板附接到硅晶片的第二侧,凹部位于开放区域内。 喷嘴板的薄层结构和凹部限定由薄层结构,喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。
    • 6. 发明授权
    • Method of forming micromachined fluid ejectors using piezoelectric actuation
    • 使用压电驱动形成微机械流体喷射器的方法
    • US08359748B2
    • 2013-01-29
    • US12273573
    • 2008-11-19
    • Baomin XuSteven A. BuhlerStephen D. WhiteScott Jong Ho Limb
    • Baomin XuSteven A. BuhlerStephen D. WhiteScott Jong Ho Limb
    • B21D53/76H04R17/00
    • B41J2/14233B41J2/161B41J2/1623B41J2/1628B41J2/1629B41J2/1634B41J2/1639B41J2/1642B41J2/1643B41J2/1646B41J2002/14475Y10T29/42Y10T29/49401
    • A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.
    • 形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽,并用牺牲材料填充凹槽。 在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。 然后,薄膜压电体被结合或沉积到薄层结构上,并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。 牺牲材料从凹槽中移除,其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。 硅晶片的开口区域形成在硅晶片的第二侧上。 然后形成在凹部内具有凹部和孔的喷嘴板。 喷嘴板附接到硅晶片的第二侧,凹部位于开放区域内。 喷嘴板的薄层结构和凹部限定由薄层结构,喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。