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1. 发明授权

US3673539A Electrical resistance element with a semiconductor overlay 失效
标题翻译：具有半导体覆盖层的电阻元件
公开(公告)号：US3673539A
公开(公告)日：1972-06-27
申请号：US3673539D
申请日：1970-05-11
申请人： BUNKER RAMO
发明人： HEALY ROBERT M , MARSHALL ROBERT
IPC分类号： H01C10/00 , H01C10/30 , H01C17/08 , H01C17/28 , H01C9/02
CPC分类号： H01C17/288 , H01C10/00 , H01C10/308 , H01C17/08
摘要： A thin film overlay of a semi-conductive material, such as germanium, silicon, indium antimonide, titanium oxide or ferric oxide, covers the resistor track of a film resistance element. A resistance element incorporating this improvement, as compared with one having a noble metal overlay, has a much lower temperature coefficient of resistance. A germanium overlay may be provided by evacuating the space about the resistive element to a pressure of about 2 X 10 5 torr, supplying the germanium material in granular particles ranging in fineness between 180320 mesh by vibration and gravity in a steady and even flow thereof to the evacuated space at a point with respect to which the resistor track is exposed, and then evaporating the germanium at the point by electrical resistance heating to vaporization temperature at about 1,850* C. When used in a potentiometer with a movable contact, a resistance element so made exhibits superior wear stability, and good contact resistance variation characteristics.
摘要翻译：诸如锗，硅，锑化锑，氧化钛或氧化铁之类的半导体材料的薄膜覆盖物覆盖了薄膜电阻元件的电阻轨迹。与具有贵金属覆盖层的电阻元件相比，具有这种改进的电阻元件具有低得多的电阻温度系数。可以通过将围绕电阻元件的空间抽出约2×10 -5乇的压力来提供锗覆盖层，通过振动和重力将颗粒颗粒在180-320目之间的细度范围内稳定地供给到锗 - 在电阻轨迹暴露的点处均匀地流到抽空空间，然后通过电阻加热将锗蒸发至蒸发温度约为1850℃。

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