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1. 发明申请

US20230036385A1 THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY PANEL 有权
公开(公告)号：US20230036385A1
公开(公告)日：2023-02-02
申请号：US17772689
申请日：2021-06-24
申请人： BOE Technology Group Co., Ltd.
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Xue LIU , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/06 , H01L29/66
摘要： The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.

2. 发明申请

US20220126294A1 BIOCHIP AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220126294A1
公开(公告)日：2022-04-28
申请号：US17432580
申请日：2021-01-22
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiaochen MA , Ce NING , Guangcai YUAN , Xin GU , Zhengliang LI
IPC分类号： B01L3/00 , C23C14/34 , C23C14/04
摘要： A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.

3. 发明申请

US20210229088A1 MICROFLUIDIC CHANNEL AND PREPARATION METHOD AND OPERATION METHOD THEREOF 有权
公开(公告)号：US20210229088A1
公开(公告)日：2021-07-29
申请号：US16643464
申请日：2019-03-11
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Xiaochen MA , Guangcai YUAN , Ce NING , Zhengliang LI
IPC分类号： B01L3/00 , G01N35/10
摘要： A microfluidic channel and a preparation method and an operation method thereof. The microfluidic channel includes: a channel structure, including a channel for a liquid sample to flow through and a channel wall surrounding the channel. The channel wall includes an electrolyte layer made of an electrolyte material; and a control electrode layer, at a side of the electrolyte layer away from the channel. The control electrode layer overlaps with the electrolyte layer with respect to the channel.

4. 发明申请

US20210134900A1 LIGHT EMITTING SUBSTRATE AND MANUFACTURING METHOD THEREOF, ELECTRONIC DEVICE 有权
公开(公告)号：US20210134900A1
公开(公告)日：2021-05-06
申请号：US16639298
申请日：2019-03-29
申请人： BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
发明人： Mingxiao JIANG , Weifeng ZHOU , Ce NING
IPC分类号： H01L27/32 , H01L51/56
摘要： A light emitting substrate and a manufacturing method thereof, and an electronic device are provided, the method includes: forming a pixel definition layer by a patterning process using a first mask, in which the pixel definition layer includes an opening and a partition portion defining the opening; forming a first electrode, in which the first electrode includes a first portion covering at least a part of the partition portion and includes a second portion in the opening; and forming an auxiliary electrode by a patterning process using the first mask, in which the auxiliary electrode is electrically connected with the first electrode, and the auxiliary electrode is on the partition portion.

5. 发明申请

US20160035760A1 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE 有权
标题翻译：阵列基板及其制造方法以及显示装置
公开(公告)号：US20160035760A1
公开(公告)日：2016-02-04
申请号：US14422342
申请日：2014-06-30
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Ce NING , Wei YANG , Ke WANG
IPC分类号： H01L27/12
CPC分类号： H01L27/1248 , G02F2001/134372 , H01L27/1259 , H01L27/1288
摘要： The invention belongs to the field of display technology, and particularly provides an array substrate and a method for manufacturing the same, and a display device. The array substrate includes a base substrate, and a thin film transistor and driving electrodes provided on the base substrate, the thin film transistor includes a gate, a gate insulating layer, an active layer, a source and a drain, the driving electrodes include a slit-shaped electrode and a plate-shaped electrode which are located in different layers and at least partially overlap with each other in the orthographic projection direction, the source, the drain and the active layer are formed so that part of their bottom surfaces are located in the same plane, and a resin layer is further provided between the thin film transistor and the plate-shaped electrode.
摘要翻译：本发明属于显示技术领域，特别是提供阵列基板及其制造方法以及显示装置。阵列基板包括基底基板和设置在基底基板上的薄膜晶体管和驱动电极，薄膜晶体管包括栅极，栅极绝缘层，有源层，源极和漏极，驱动电极包括狭缝状电极和板状电极，其位于不同的层中并且在正投影方向上彼此至少部分重叠，源极，漏极和有源层形成为使得它们的底表面的一部分位于在同一平面内，在薄膜晶体管和板状电极之间进一步设置树脂层。

6. 发明申请

US20220223745A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE, AND DISPLAY DEVICE 有权
公开(公告)号：US20220223745A1
公开(公告)日：2022-07-14
申请号：US17761549
申请日：2021-05-18
申请人： BOE Technology Group Co., Ltd.
发明人： Jiayu HE , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Zhi WANG , Feng GUAN
IPC分类号： H01L29/786 , H01L29/417 , H01L29/06 , H01L29/66
摘要： A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

7. 发明申请

US20210225893A1 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE 有权
公开(公告)号：US20210225893A1
公开(公告)日：2021-07-22
申请号：US16765216
申请日：2019-12-06
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Wei YANG , Guangcai YUAN , Ce NING , Xinhong LU , Tianmin ZHOU , Xin YANG
IPC分类号： H01L27/12
摘要： A method of manufacturing an array substrate includes: forming a first semiconductor pattern and a first insulating layer group sequentially on a base substrate; forming a second semiconductor pattern and a second insulating layer group sequentially on the first insulating layer group; forming two first via holes in the first insulating layer group and the second insulating layer group to expose the first semiconductor pattern, annealing the exposed first semiconductor pattern and then removing an oxide layer on a surface of the first semiconductor pattern; forming connecting wires in the first via holes; forming second via holes in the second insulating layer group to expose the second semiconductor pattern, and forming a first source electrode and a first drain electrode in the second via holes such that the first source electrode or the first drain electrode covers and is connected to one of the connecting wires.

8. 发明申请

US20200286929A1 TRANSISTOR, ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE 审中-公开
公开(公告)号：US20200286929A1
公开(公告)日：2020-09-10
申请号：US16318740
申请日：2018-04-02
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Zhengliang LI , Ce NING , Song LIU , Wenlin ZHANG , Xuefei SUN
IPC分类号： H01L27/12
摘要： The present disclosure provides a transistor, an array substrate and a method of manufacturing the array substrate, and a display device. The method of manufacturing the array substrate comprises: depositing a plurality of silicon oxide layers on an active layer of a transistor; and depositing a silicon oxynitride layer over the plurality of silicon oxide layers.

9. 发明申请

US20200066758A1 DISPLAY PANEL AND METHOD FOR FABRICATING THE SAME 审中-公开
公开(公告)号：US20200066758A1
公开(公告)日：2020-02-27
申请号：US16531231
申请日：2019-08-05
申请人： BOE Technology Group Co., Ltd.
发明人： Wei YANG , Guangcai YUAN , Ce NING , Xinhong LU
IPC分类号： H01L27/12
摘要： A display panel and a method for fabricating the same are provided. The display panel includes: a base substrate; a first thin film transistor on one side of the base substrate, the first thin film transistor comprising: a first active layer, a first protection layer, a second protection layer, a first source and a first drain; wherein the first protection layer and the second protection layer are on one side of the first active layer away from the base substrate, and are separated from each other; the first protection layer and the second protection layer are configured to protect the first active layer from being etched during forming of a via-hole corresponding to the first source and/or a via-hole corresponding to the first drain,

10. 发明申请

US20160293628A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管阵列基板，其制造方法和显示装置
公开(公告)号：US20160293628A1
公开(公告)日：2016-10-06
申请号：US14769422
申请日：2014-10-31
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： Ce NING
IPC分类号： H01L27/12 , G02F1/1368 , G02F1/1343 , G02F1/1362 , H01L29/786 , G02F1/1333
CPC分类号： H01L27/124 , G02F1/133345 , G02F1/134309 , G02F1/13439 , G02F1/136286 , G02F1/1368 , G02F2001/134318 , G02F2001/136295 , G02F2201/121 , H01L21/77 , H01L27/12 , H01L27/1225 , H01L27/1259 , H01L27/127 , H01L27/1288 , H01L29/7869
摘要： The present disclosure provides a thin film transistor (TFT) array substrate, its manufacturing method and a display device. The method includes steps of: forming patterns of a common electrode, a common electrode line, a gate line and a data line on a substrate by a single patterning process; forming an insulating layer; forming a pattern of an active layer by a single patterning process; forming a gate insulating layer and forming via-holes corresponding to the gate line, the data line and the active layer in the gate insulating layer by a single patterning process; and forming patterns of a pixel electrode, a gate electrode, a source electrode and a drain electrode by a single patterning process.
摘要翻译：本公开提供一种薄膜晶体管（TFT）阵列基板，其制造方法和显示装置。该方法包括以下步骤：通过单一图案化工艺在衬底上形成公共电极，公共电极线，栅极线和数据线的图案; 形成绝缘层; 通过单一图案化工艺形成有源层的图案; 形成栅极绝缘层，并通过单个图案化工艺在栅极绝缘层中形成对应于栅极线，数据线和有源层的通孔; 以及通过单一图案化工艺形成像素电极，栅电极，源电极和漏电极的图案。

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