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1. 发明授权

US06455438B1 Fabrication method for a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06455438B1
公开(公告)日：2002-09-24
申请号：US09662855
申请日：2000-09-15
申请人： Azusa Yanagisawa , Koki Muto , Tadashi Nishimuro , Katsuo Oshima , Akira Watanabe , Akihiko Nara , Kouhei Shimoyama , Keisuke Tanaka , Takamitsu Furukawa , Shouzou Kobayashi
发明人： Azusa Yanagisawa , Koki Muto , Tadashi Nishimuro , Katsuo Oshima , Akira Watanabe , Akihiko Nara , Kouhei Shimoyama , Keisuke Tanaka , Takamitsu Furukawa , Shouzou Kobayashi
IPC分类号： H01L2100
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/31144
摘要： According to the present invention, a semiconductor device is fabricated by the following processes. First, a film to be etched is formed on a semiconductor substrate. On the film to be etched is formed a resist film. Then, a first pattern group including first patterns having a first size and a second pattern group including second patterns arranged outside of the first pattern group are formed by exposure. The resist film is then developed to form openings in the resist film so that the resultant openings correspond to the first and second patterns, respectively. The openings are then made smaller by annealing the resist film. The aforementioned processes enables openings having substantially the same shape to be formed in the film to be etched.
摘要翻译：根据本发明，通过以下方法制造半导体器件。首先，在半导体基板上形成被蚀刻的膜。在被蚀刻的膜上形成抗蚀剂膜。然后，通过曝光形成包括具有第一尺寸的第一图案和包括布置在第一图案组外部的第二图案的第二图案组的第一图案组。然后将抗蚀剂膜显影以在抗蚀剂膜中形成开口，使得所得到的开口分别对应于第一和第二图案。然后通过退火抗蚀剂膜使开口变小。上述处理使得能够在待蚀刻的膜中形成具有基本相同形状的开口。

2. 发明授权

US06654107B1 Stepper lens aberration measurement pattern and stepper lens aberration characteristics evaluating method 失效
标题翻译：步进透镜像差测量图案和步进透镜像差特性评估方法
公开(公告)号：US06654107B1
公开(公告)日：2003-11-25
申请号：US09527854
申请日：2000-03-17
申请人： Akira Watanabe , Akihiko Nara
发明人： Akira Watanabe , Akihiko Nara
IPC分类号： G01B900
CPC分类号： G01M11/0264 , G03F7/706
摘要： A line-and-space type first pattern and a roughly rectangular second pattern are joined in a rough comb shape to prepare a joint pattern. The first pattern is constituted of a plurality of line patterns each having a width along the direction of its shorter side set to a dimension that does not allow separation/resolution in the field of view of an optical length measuring machine. The second pattern has external dimensions that allow separation/resolution in the field of view of the optical length measuring machine. Such joint patterns are positioned over a distance that allows separation/resolution in the field of view of the optical length measuring machine from each other with the line portions of the first patterns extending outward and achieving a symmetrical positional relationship with together. This pattern is then transferred and formed onto a wafer using a stepper. In the resulting pattern, the outer edges of the line-and-space portions achieve a linear shape, and measurement using the optical length measuring machine is enabled to make it possible to evaluate aberration components. In addition, since the front end of a line-and-space portion undergoes changes in shape sensitively in response to changes in the exposure condition and aberrations, a measurement method with a high degree of sensitivity is achieved.
摘要翻译：线和空间型第一图案和大致矩形的第二图案以粗梳形连接以制备接合图案。第一图案由多个线条图案构成，每个线条图案沿着其短边方向的宽度被设定为在光学长度测量机的视场中不允许分离/分辨的尺寸。第二种图案具有在光学长度测量机的视场中允许分离/分辨的外部尺寸。这种接合图案被定位在允许光学长度测量机的视场中的分离/分辨率彼此之间的距离上，其中第一图案的线部分向外延伸并且一起实现对称的位置关系。然后使用步进器将该图案转移并形成在晶片上。在所得到的图案中，线间距部分的外边缘实现线性形状，并且使用光学长度测量机的测量能够使得可以评估像差分量。此外，由于线空间部分的前端响应于曝光条件和像差的变化而敏感地发生形状变化，所以实现了高灵敏度的测量方法。

3. 发明授权

US06490026B1 Method and system for aligning object to be processed with predetermined target article 失效
标题翻译：用于将待处理对象与预定目标物品对准的方法和系统
公开(公告)号：US06490026B1
公开(公告)日：2002-12-03
申请号：US09589125
申请日：2000-06-08
申请人： Akira Watanabe , Akihiko Nara
发明人： Akira Watanabe , Akihiko Nara
IPC分类号： G03B2742
CPC分类号： G03F9/7046 , G03B27/42 , G03F9/00
摘要： A method and a system are disclosed for aligning an object to be processed with a predetermined target article, with enhanced accuracy. The method includes the steps of detecting positional data with respect to the object in a state such that the object is rotated by +90 degrees with respect to a reference direction (step S104), and also detecting positional data with respect to the object in a state such that the object is rotated by −90 degrees with respect to the reference direction (step S108). A positional correction factor for the object's position can then be calculated by making use of the positional data attained by both of the above detection steps (step S109). Therefore, asymmetrical signal waveforms when the reflected alignment light is detected can be offset, so that the alignment accuracy can be enhanced.
摘要翻译：公开了一种方法和系统，用于将预处理物体与预定目标物品对准，并提高精度。该方法包括在相对于参考方向旋转物体旋转+90度的状态下检测相对于物体的位置数据的步骤（步骤S104），并且还检测相对于物体的位置数据状态使得物体相对于基准方向旋转-90度（步骤S108）。然后可以通过利用由上述检测步骤获得的位置数据来计算对象位置的位置校正因子（步骤S109）。因此，当检测到反射对准光时的不对称信号波形可以被偏移，从而可以提高对准精度。

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