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1. 发明授权

US11722135B2 Superconducting AC switch system 有权
公开(公告)号：US11722135B2
公开(公告)日：2023-08-08
申请号：US17375210
申请日：2021-07-14
申请人： Aurelius L. Graninger , Aaron A. Pesetski , Joel D. Strand
发明人： Aurelius L. Graninger , Aaron A. Pesetski , Joel D. Strand
IPC分类号： H03K17/92 , H01F7/06
CPC分类号： H03K17/92 , H01F7/064
摘要： A superconducting AC switch system includes a switch network configuration comprising a Josephson junction (JJ) coupled to a transmission line having a transmission line impedance, and a magnetic field generator that is configured to switch from inducing a magnetic field in a plane of the JJ, and providing no magnetic field in the plane of the JJ. An AC input signal applied at an input of the switch network configuration is passed through to an output of the switch network configuration in a first magnetic state, and substantially reflected back to the input of the switch network configuration in a second magnetic state. The first magnetic state is one of inducing and not inducing a magnetic field in a plane of the JJ, and the second magnetic state is the other of inducing and not inducing a magnetic field in a plane of the JJ.

2. 发明授权

US11522118B2 Superconductor structure with normal metal connection to a resistor and method of making the same 有权
公开(公告)号：US11522118B2
公开(公告)日：2022-12-06
申请号：US16738790
申请日：2020-01-09
申请人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
发明人： Christopher F. Kirby , Michael Rennie , Daniel J. O'Donnell , Aurelius L. Graninger , Aaron A. Pesetski
IPC分类号： H01L21/00 , H01L39/24 , H01L23/522 , H01L23/532
摘要： A method of forming a superconductor structure is disclosed. The method comprises forming a superconductor line in a first dielectric layer, forming a resistor with an end coupled to an end of the superconductor line, and forming a second dielectric layer overlying the resistor. The method further comprises etching a tapered opening through the second dielectric layer to the resistor, and performing a contact material fill with a normal metal material to fill the tapered opening and form a normal metal connector coupled to the resistor.

3. 发明授权

US09685935B2 Tunable transmon circuit assembly 有权
公开(公告)号：US09685935B2
公开(公告)日：2017-06-20
申请号：US14485129
申请日：2014-09-12
申请人： Joel D. Strand , Aaron A. Pesetski
发明人： Joel D. Strand , Aaron A. Pesetski
IPC分类号： H03K3/38 , H03K3/012 , B82Y10/00 , H01L39/24 , G06N99/00
CPC分类号： H03K3/38 , B82Y10/00 , G06N99/002 , H01L39/2493 , H03K3/012
摘要： Systems and methods are provided for a tunable transmon qubit. The qubit includes a first Josephson junction on a first path between a transmission line and a circuit ground and second and third Josephson junctions arranged in parallel with one another on a second path between the transmission line and the circuit ground to form a direct current superconducting quantum interference device (DC SQUID). The DC SQUID is in parallel with the first Josephson junction. A capacitor is arranged in parallel with the first Josephson junction and the DC SQUID on a third path between the transmission line and the circuit ground as to form, in combination with the first path, an outer loop of the tunable transmon qubit. A bias circuit is configured to provide a constant bias flux to one of the DC SQUID and the outer loop of the tunable transmon qubit.

4. 发明申请

US20160079968A1 TUNABLE TRANSMON CIRCUIT ASSEMBLY 有权
标题翻译：可控转移电路组件
公开(公告)号：US20160079968A1
公开(公告)日：2016-03-17
申请号：US14485129
申请日：2014-09-12
申请人： JOEL D. STRAND , Aaron A. Pesetski
发明人： JOEL D. STRAND , Aaron A. Pesetski
IPC分类号： H03K3/38 , H03K3/012 , H01L39/24
CPC分类号： H03K3/38 , B82Y10/00 , G06N99/002 , H01L39/2493 , H03K3/012
摘要： Systems and methods are provided for a tunable transmon qubit. The qubit includes a first Josephson junction on a first path between a transmission line and a circuit ground and second and third Josephson junctions arranged in parallel with one another on a second path between the transmission line and the circuit ground to form a direct current superconducting quantum interference device (DC SQUID). The DC SQUID is in parallel with the first Josephson junction. A capacitor is arranged in parallel with the first Josephson junction and the DC SQUID on a third path between the transmission line and the circuit ground as to form, in combination with the first path, an outer loop of the tunable transmon qubit. A bias circuit is configured to provide a constant bias flux to one of the DC SQUID and the outer loop of the tunable transmon qubit.
摘要翻译：为可调谐的超音速量子位提供了系统和方法。量子比特包括在传输线和电路地之间的第一路径上的第一约瑟夫逊结，以及在传输线和电路接地之间的第二路径上彼此并联布置的第二和第三约瑟夫逊结，以形成直流超导量子干扰设备（DC SQUID）。 DC SQUID与第一个约瑟夫逊结并联。在传输线和电路接地之间的第三路径上，与第一约瑟夫逊结和DC SQUID并联地布置电容器，以便与第一路径组合形成可调谐的超音速量子位的外部环路。偏置电路被配置为向可调谐跨量子位的DC SQUID和外部环路之一提供恒定的偏置通量。

5. 发明授权

US09035704B2 High impedance microwave electronics 有权
标题翻译：高阻抗微波电子
公开(公告)号：US09035704B2
公开(公告)日：2015-05-19
申请号：US12896349
申请日：2010-10-01
申请人： Aaron A. Pesetski , Hong Z. Pesetski , James E. Baumgardner, II , Dale E. Dawson
发明人： Aaron A. Pesetski , Hong Z. Pesetski , James E. Baumgardner, II , Dale E. Dawson
IPC分类号： H03F3/04 , B82Y10/00
CPC分类号： B82Y10/00 , H01L2223/6655 , H03F3/04
摘要： High impedance, high frequency nanoscale device electronics configured to interface with low impedance loads include an impedance transforming stage constructed of multiple nanoscale devices, such as carbon nanotube field-effect transistors. In an embodiment of the present invention, an impedance transforming output stage of a multistage amplifier is configured to drive a 50 ohm transmission line with unity voltage gain using multiple carbon nanotube field-effect transistors in parallel. In a further embodiment, a receiver provided for an electronically steered receive array is a monolithic, lumped-element system formed from nanoscale devices and configured to interface with the external electrical systems via a single transmission line.
摘要翻译：配置为与低阻抗负载相连接的高阻抗，高频纳米级器件电子器件包括由多个纳米尺度器件（例如碳纳米管场效应晶体管）构成的阻抗变换级。在本发明的一个实施例中，多级放大器的阻抗变换输出级配置为并联使用多个碳纳米管场效应晶体管驱动具有单位电压增益的50欧姆传输线。在另一个实施例中，为电子转向接收阵列提供的接收器是由纳米级器件形成的单片式集总元件系统，并被配置为经由单个传输线与外部电气系统接口。

6. 发明申请

US20120182178A1 Carbon nanotube devices and method of fabricating the same 有权
标题翻译：碳纳米管装置及其制造方法
公开(公告)号：US20120182178A1
公开(公告)日：2012-07-19
申请号：US11889350
申请日：2007-08-10
申请人： Aaron A. Pesetski , Hong Zhang , John Xavier Przybysz , John Douglas Adam
发明人： Aaron A. Pesetski , Hong Zhang , John Xavier Przybysz , John Douglas Adam
IPC分类号： G01S13/89 , G01S13/00
CPC分类号： H04B1/28 , G01N21/3581 , H03D7/02
摘要： An imaging system includes an RF source, a focal plane array and device for focusing the RF signal from the RF source. The focal plane array includes a plurality of carbon nanotube mixers for capturing RF signals and down-converting the signals to a selected bandwidth and output an output signal. The device focuses the RF signal output from said RF source onto the focal plane array.
摘要翻译：成像系统包括RF源，焦平面阵列和用于聚焦来自RF源的RF信号的装置。焦平面阵列包括用于捕获RF信号的多个碳纳米管混合器，并将信号下变频到所选择的带宽并输出输出信号。该设备将来自所述RF源的RF信号输出聚焦到焦平面阵列上。

7. 发明申请

US20120144159A1 QUANTUM PROCESSOR 有权
标题翻译：量子处理器
公开(公告)号：US20120144159A1
公开(公告)日：2012-06-07
申请号：US13307703
申请日：2011-11-30
申请人： Aaron A. Pesetski , James E. Baumgardner
发明人： Aaron A. Pesetski , James E. Baumgardner
IPC分类号： G06F15/76 , G06F9/02
CPC分类号： H03K19/195 , B82Y10/00 , G06N99/002 , H03K3/38 , H03K17/92
摘要： One embodiment of the invention includes a quantum processor system. The quantum processor system includes a first resonator having a first characteristic frequency and a second resonator having a second characteristic frequency greater than the first characteristic frequency. A qubit cell is coupled to each of the first resonator and the second resonator. The qubit cell has a frequency tunable over a range of frequencies including the first characteristic frequency and the second characteristic frequency. A classical control mechanism is configured to tune the frequency of the qubit cell as to transfer quantum information between the first resonator and the second resonator.
摘要翻译：本发明的一个实施例包括量子处理器系统。量子处理器系统包括具有第一特征频率的第一谐振器和具有大于第一特征频率的第二特征频率的第二谐振器。量子比特单元耦合到第一谐振器和第二谐振器中的每一个。量子比特单元具有在包括第一特征频率和第二特征频率的频率范围内的频率可调。经典控制机构被配置为调整量子位单元的频率以便在第一谐振器和第二谐振器之间传送量子信息。

8. 发明授权

US08022722B1 Quantum logic gates utilizing resonator mediated coupling 有权
标题翻译：量子逻辑门利用谐振器介质耦合
公开(公告)号：US08022722B1
公开(公告)日：2011-09-20
申请号：US12794439
申请日：2010-06-04
申请人： Aaron A. Pesetski , James E. Baumgardner
发明人： Aaron A. Pesetski , James E. Baumgardner
IPC分类号： H03K19/195
CPC分类号： H03K19/195 , B82Y10/00 , G06N99/002
摘要： Systems and methods are provided for performing a quantum gate operation. A first classical control parameter, configured to tune an associated frequency of a first qubit, is adjusted from a first value to a second value. The first value is selected such that the first qubit is tuned far from a characteristic frequency of an associated resonator, and the second value is selected such that the first qubit is tuned near to the characteristic frequency of the resonator. A second classical control parameter, configured to tune an associated frequency of a second qubit, is adjusted from a third value to a fourth value. The third value is selected such that the second qubit is tuned far from the characteristic frequency of the resonator. The first classical control parameter is returned to the first value. The second classical control parameter is returned to the third value.
摘要翻译：提供了用于执行量子门操作的系统和方法。经配置以调整第一量子位的相关频率的第一经典控制参数从第一值调整到第二值。选择第一值使得第一量子位远离相关联的谐振器的特征频率，并且选择第二值使得第一量子位被调谐到谐振器的特征频率附近。经配置以调谐第二量子位的相关频率的第二经典控制参数从第三值调整到第四值。选择第三值使得第二量子位被调谐远离谐振器的特征频率。第一个经典控制参数返回到第一个值。第二个经典控制参数返回到第三个值。

9. 发明申请

US20100026538A1 METHOD AND APPARATUS FOR MATCHED QUANTUM ACCURATE FEEDBACK DACS 有权
标题翻译：匹配量子精确反馈DAC的方法和装置
公开(公告)号：US20100026538A1
公开(公告)日：2010-02-04
申请号：US12184204
申请日：2008-07-31
申请人： Quentin P. Herr , Aaron A. Pesetski , John X. Przybysz , Donald L. Miller
发明人： Quentin P. Herr , Aaron A. Pesetski , John X. Przybysz , Donald L. Miller
IPC分类号： H03M3/02
CPC分类号： H03M3/454 , H03M3/422 , H03M3/47
摘要： A second order superconductor delta-sigma analog-to-digital modulator having an input for receiving an analog signal, a first integrator coupled to the input, a second integrator cascaded with the first integrator, and a quantum comparator digitizing output from the second integrator reduces quantization noise by providing matched quantum accurate DACs in a feedback loop between output from the quantum comparator and input to the first integrator. The matched quantum accurate feedback DACs produce identically repeatable voltage pulses, may be configured for multi-bit output, may be time-interleaved to permit higher clocking rates, and may be employed in a balanced bipolar configuration to allow inductive input coupling. Bipolar feedback is balanced when gain of a first DAC exceeds gain of a matched, opposite polarity DAC by the amount of implicit feedback from the comparator into the second integrator.
摘要翻译：具有用于接收模拟信号的输入端的第二级超导体Δ-Σ模数转换器，耦合到输入端的第一积分器，与第一积分器级联的第二积分器和来自第二积分器的量子比较器数字化输出减小通过在量子比较器的输出和第一积分器的输出之间的反馈回路中提供匹配的量子精确DAC来进行量化噪声。匹配的量子精确反馈DAC产生相同可重复的电压脉冲，可以被配置用于多位输出，可以被时间交织以允许更高的时钟速率，并且可以采用平衡双极配置来允许电感输入耦合。当第一个DAC的增益超过匹配的相反极性DAC的增益时，双极反馈被平衡，这是由比较器到第二个积分器的隐含反馈量。

10. 发明授权

US11333413B2 Solid state cooler device 有权
公开(公告)号：US11333413B2
公开(公告)日：2022-05-17
申请号：US16554203
申请日：2019-08-28
申请人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
发明人： Robert Miles Young , Aaron Ashley Hathaway , John X. Przybysz , Gregory R. Boyd , Zachary A. Stegen , Edward R. Engbrecht , Aaron A. Pesetski , Marc Eisenzweig Sherwin
IPC分类号： F25B21/00 , F25D31/00 , H01L39/06 , H01L23/00
摘要： A solid state cooler device is provided that includes a substrate, a first and second conductive pad disposed on the substrate, a first and second superconductor pad each having a side with a plurality of conductive pad contact interfaces spaced apart from one another and being in contact with a surface of respective first and second conductive pads, and a first and second insulating layer disposed between respective first and second superconductor pads, and respective ends of a normal metal layer. A bias voltage is applied between one of a first conductive pad or first superconductor pad and one of the second conductive pad or the second superconductor pad to remove hot electrons from the normal metal layer, and the contact area of the plurality of first and second conductive pad contact interfaces inhibits the transfer of heat back to the first and second superconductor pads.

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