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1. 发明授权

US6057220A Titanium polycide stabilization with a porous barrier 失效
标题翻译：具有多孔屏障的多晶硅化钛稳定剂
公开(公告)号：US6057220A
公开(公告)日：2000-05-02
申请号：US936029
申请日：1997-09-23
申请人： Atul C. Ajmera , Christine Dehm , Anthony G. Domenicucci , George G. Gifford , Stephen K. Loh , Christopher Parks , Viraj Y. Sardesai
发明人： Atul C. Ajmera , Christine Dehm , Anthony G. Domenicucci , George G. Gifford , Stephen K. Loh , Christopher Parks , Viraj Y. Sardesai
IPC分类号： H01L21/28 , H01L29/49 , H01L21/44 , H01L21/425
CPC分类号： H01L21/28061 , H01L29/4933
摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.
摘要翻译：通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，以抑制硅物质的热迁移率。在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。由于硅团聚是多杀线反转现象的前体，因此有效地避免了可能刺穿潜在氧化物并导致器件故障的多硅化物反转。因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性增加，因此增加了可被该结构承受的热量预算，并且增加了存在多晶硅所产生的制造工艺窗口，这可以在其它工艺中被利用，例如退火开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。

2. 发明授权

US5200023A Infrared thermographic method and apparatus for etch process monitoring and control 失效
标题翻译：用于蚀刻过程监测和控制的红外热成像方法和设备
公开(公告)号：US5200023A
公开(公告)日：1993-04-06
申请号：US753189
申请日：1991-08-30
申请人： George G. Gifford , James A. O'Neill
发明人： George G. Gifford , James A. O'Neill
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32871 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H05H1/46
摘要： An infrared television camera (20) monitors the etching of a substrate (26) in-situ in an etch chamber (24). Temporal and spatial resolution of IR emissions is obtained by monitoring the top surface of the substrate (26) in two-dimensions throughout the course of the etching process. Anomalies in temperature detected on the top surface of the substrate (26) can indicate defects in the substrate (26) itself or in the operation of the etching apparatus. Process feedback control is achieved by adjusting various parameters of the etching apparatus (i.e., gas-pressure, flow pattern, magnetic field, coolant flow to electrode, or the like) to compensate for etching anomalies. Etch uniformity and etch endpoint monitoring is achieved by monitoring the IR emissions resulting from exothermic reaction of the film being etched. IR emissions decline at the end of an exothermic etch reaction. Particulate matter which might otherwise harm the substrate (26) can be identified in the gas-phase with a second IR television camera (34) which images the region above the substrate (26). Particulate matter appears as localized "hot spots" within the gas plasma, and the identification of particulate matter allows corrective measures to be taken.
摘要翻译：红外电视摄像机（20）在蚀刻室（24）中原位监测衬底（26）的蚀刻。通过在蚀刻过程的整个过程中二维地监测衬底（26）的顶表面来获得IR发射的时间和空间分辨率。在基板（26）的顶表面上检测到的温度异常可以指示基板（26）本身的缺陷或蚀刻装置的操作中的缺陷。通过调整蚀刻装置的各种参数（即，气体压力，流动模式，磁场，冷却剂流向电极等）来实现过程反馈控制，以补偿蚀刻异常。蚀刻均匀性和蚀刻端点监测通过监测被蚀刻的膜的放热反应产生的IR辐射来实现。在放热蚀刻反应结束时，IR辐射下降。否则可能会损害基板（26）的颗粒物质可以在对基板（26）上方的区域进行成像的第二IR电视摄像机（34）的气相中识别。颗粒物质在气体等离子体中呈现为局部“热点”，微粒物质的识别允许采取纠正措施。

3. 发明授权

US5387777A Methods and apparatus for contamination control in plasma processing 失效
标题翻译：等离子体处理污染控制的方法和装置
公开(公告)号：US5387777A
公开(公告)日：1995-02-07
申请号：US903644
申请日：1992-06-24
申请人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
发明人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
IPC分类号： C23F4/00 , C23C16/44 , C23C16/515 , H01J37/32 , H01L21/302 , B23K10/00 , B05D3/06 , B44C1/22
CPC分类号： H01J37/32862 , C23C16/44 , C23C16/4401 , C23C16/515 , H01J2237/022 , Y10S156/916
摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Following this procedure, the tool is then be used for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.
摘要翻译：等离子体处理中的污染水平通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力之类的机械搅拌来中断等离子体。经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。按照此过程，然后将该工具用于产品运行。或者，半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体并且在等离子体处理之前通过过滤来自原料气的颗粒来实现。通过激光散射确定施加的应力的效率和终点，使用脉冲或连续的激光源，例如， HeNe激光。

4. 发明授权

US5546322A Method and system for analyzing plasma data 失效
标题翻译：血浆数据分析方法和系统
公开(公告)号：US5546322A
公开(公告)日：1996-08-13
申请号：US226781
申请日：1994-04-12
申请人： George G. Gifford , Brock E. Osborn
发明人： George G. Gifford , Brock E. Osborn
IPC分类号： G01N21/62 , G01N21/71 , G01N21/73 , H01L21/302 , H01L21/3065 , H05H1/00 , G01N31/00
CPC分类号： G01N21/71 , H05H1/0037
摘要： Analysis of plasma data indicative of gaseous species therein, such as Optical Emission Spectroscopy (OES) data, is aided through the interactive use of a computer. OES data may be calibrated by the computer with minimal input from the user regarding a gas the user knows or suspects is present. The computer then assumes the presence of that gas and assigns relative intensity peaks to known wavelengths for that gas, allowing calibration to take place. Selective identification of particular gases from the data is also possible. Used in conjunction with selective identification, a learning function allows the system to improve the accuracy of future gaseous species identification. Certain characteristics of a particular gas over time, such as intensity at a particular wavelength or at all wavelengths, may also be automatically plotted.
摘要翻译：通过交互式使用计算机来辅助指示其中气态物质的等离子体数据的分析，例如光发射光谱（OES）数据。 OES数据可以由计算机进行校准，其中用户关于用户知道或怀疑存在的气体的最小输入。然后，计算机假设存在该气体，并将相对强度峰值分配给该气体的已知波长，从而允许进行校准。从数据中选择性识别特定气体也是可能的。与选择性识别结合使用，学习功能允许系统提高未来气态物种鉴定的准确性。特定气体随时间的某些特性，例如在特定波长处或在所有波长处的强度也可以自动绘制。

5. 发明授权

US5367139A Methods and apparatus for contamination control in plasma processing 失效
标题翻译：等离子体处理污染控制的方法和装置
公开(公告)号：US5367139A
公开(公告)日：1994-11-22
申请号：US425659
申请日：1989-10-23
申请人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
发明人： Reid S. Bennett , Albert R. Ellingboe , George G. Gifford , Kurt L. Haller , John S. McKillop , Gary S. Selwyn , Jyothi Singh
IPC分类号： C23F4/00 , C23C16/44 , C23C16/515 , H01J37/32 , H01L21/302 , B23K9/00
CPC分类号： H01J37/32862 , C23C16/44 , C23C16/4401 , C23C16/515 , H01J2237/022 , Y10S156/916
摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interruption of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechanical agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of applied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower electrode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open.
摘要翻译：等离子体处理中的污染水平通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒而减少等离子体处理中的污染水平。用于防止颗粒形成的一些技术包括通过周期性地脉冲等离子体能量源或者施加能量以提供诸如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力之类的机械搅拌来中断等离子体。经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。

6. 发明授权

US5378312A Process for fabricating a semiconductor structure having sidewalls 失效
标题翻译：制造具有侧壁的半导体结构的工艺
公开(公告)号：US5378312A
公开(公告)日：1995-01-03
申请号：US164223
申请日：1993-12-07
申请人： George G. Gifford , Yeong-Jyh T. Lii , Jin J. Wu
发明人： George G. Gifford , Yeong-Jyh T. Lii , Jin J. Wu
IPC分类号： B08B7/00 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , B08B7/0092 , H01L21/31116 , Y10S438/963
摘要： A method of fabricating a semiconductor structure includes the steps of providing a semiconductor substrate having a material disposed thereon, masking the material with a mask having an appropriate pattern for forming a semiconductor structure, etching unmasked portions of the material so as to form the semiconductor structure, wherein the etching produces a film which attaches onto the semiconductor structure and/or on the semiconductor substrate, and removing the film from the semiconductor structure according to the steps of producing a cryogenic jet stream having cryogenic particles therein, and directing the cryogenic jet stream at the film such that the crogenic jet stream impinges on and causes the film to decrease in temperature so that a high temperature gradient develops between the film and the semiconductor structure, the film detaching from the semiconductor structure and fracturing due to contraction caused by the decrease in temperature and high temperature gradient.
摘要翻译：一种制造半导体结构的方法包括以下步骤：提供具有设置在其上的材料的半导体衬底，用具有用于形成半导体结构的适当图案的掩模掩蔽该材料，蚀刻材料的未屏蔽部分以形成半导体结构其中所述蚀刻产生附着到所述半导体结构和/或所述半导体衬底上的膜，并且根据在其中制备其中具有低温颗粒的低温喷射流的步骤从所述半导体结构去除所述膜，以及引导所述低温射流在膜上使得致动喷流影响并导致膜的温度降低，使得在膜和半导体结构之间产生高温梯度，膜与半导体结构分离并由于减少引起的收缩而断裂在温度和高温梯度下。

7. 发明授权

US5347460A Method and system employing optical emission spectroscopy for monitoring and controlling semiconductor fabrication 失效
标题翻译：用于监测和控制半导体制造的光发射光谱的方法和系统
公开(公告)号：US5347460A
公开(公告)日：1994-09-13
申请号：US935076
申请日：1992-08-25
申请人： George G. Gifford , Brock E. Osborn
发明人： George G. Gifford , Brock E. Osborn
IPC分类号： C30B25/16 , G01J3/443 , G01N21/62 , H01J37/32 , H01L21/00 , H01L21/02 , H01L21/3065 , G06F15/46 , C23C14/00
CPC分类号： H01L21/67253 , G01J3/443 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H01J2237/332 , H01J2237/334
摘要： Automated, closed loop method and system for monitor and control of semiconductor fabrication processing are described. Optical emissions spectrometer (OES) data readings from a fabrication plasma chamber are statistically analyzed and a novel pattern model (based on Markov random fields) is used in combination with a selective stochastic relaxation technique to identify gaseous species within the chamber from the OES readings. Wavelength and intensity information is also employed to accurately estimate relative concentration levels of identified gases within the chamber. The unique statistical analysis approach described allows real-time monitor and control of physical processing within the fabrication chamber. Several practical algorithms are set forth, including techniques for OES peak identification, peak sharpening, gas identification, and physical processing control.
摘要翻译：描述了半导体制造处理的自动闭环方法和监控系统。统计分析来自制造等离子体室的光发射光谱仪（OES）数据读数，并将新的模式模型（基于马尔可夫随机场）与选择性随机松弛技术结合使用，以从OES读数中识别腔室内的气态物质。波长和强度信息也用于准确估计室内识别出的气体的相对浓度水平。所描述的独特的统计分析方法允许对制造室内的物理处理进行实时监控和控制。阐述了一些实用的算法，包括OES峰识别，峰值锐化，气体识别和物理处理控制的技术。

8. 发明授权

US5338702A Method for fabricating tungsten local interconnections in high density CMOS 失效
标题翻译：在高密度CMOS中制造钨局部互连的方法
公开(公告)号：US5338702A
公开(公告)日：1994-08-16
申请号：US9511
申请日：1993-01-27
申请人： Edward Kobeda , Jeffrey P. Gambino , George G. Gifford , Nickolas J. Mazzeo
发明人： Edward Kobeda , Jeffrey P. Gambino , George G. Gifford , Nickolas J. Mazzeo
IPC分类号： H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L27/092 , H01L21/302
CPC分类号： H01L21/32136 , H01L21/31138 , H01L21/76895 , Y10S438/97
摘要： The present invention provides a method for fabricating tungsten local interconnections in high density CMOS circuits, and also provides high density CMOS circuits having local interconnections formed of tungsten. Pursuant to the method, an etch stop layer of chromium is initially deposited on the circuit elements of the CMOS silicon substrate. Next, a conductive layer of tungsten is non-selectively deposited on the chromium layer. A photoresist mask is then lithographically patterned over the tungsten layer. The tungsten layer is then etched down to, and stopping at, the chromium layer, after which the photoresist mask is stripped. The stripping preferably uses a low temperature plasma etch in O.sub.2 at a temperature of less than 100.degree. C. Finally, a directional O.sub.2 reactive ion etch is used to remove the chromium layer selectively to the silicon substrate. Borderless contacts are formed with the aid of the chromium etch stop layer beneath the tungsten local interconnection layer. The method of integration of this approach results in anisotropic metal lines patterned over topography using a standard photoresist mask. This approach also allows partial overlap of contacts to reduce device dimensions, and thereby results in improved density and performance.
摘要翻译：本发明提供一种用于在高密度CMOS电路中制造钨局部互连的方法，并且还提供具有由钨形成的局部互连的高密度CMOS电路。根据该方法，最初在CMOS硅衬底的电路元件上沉积铬的蚀刻停止层。接下来，钨层的导电层被非选择性地沉积在铬层上。然后光致抗蚀剂掩模在钨层上被光刻图案化。然后将钨层蚀刻到铬层上并停止在其上，之后剥离光致抗蚀剂掩模。剥离优选在低于100℃的温度下在O 2中使用低温等离子体蚀刻。最后，使用定向O 2反应离子蚀刻来选择性地将硅层除去到硅衬底。借助于钨局部互连层下方的铬蚀刻停止层形成无边界接触。该方法的集成方法导致使用标准光致抗蚀剂掩模在地形图上形成的各向异性金属线。该方法还允许触点的部分重叠以减少器件尺寸，从而导致改善的密度和性能。

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