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1. 发明授权

US06847667B2 Semiconductor laser device and laser module using same 有权
标题翻译：半导体激光器件和激光模块使用相同
公开(公告)号：US06847667B2
公开(公告)日：2005-01-25
申请号：US10802753
申请日：2004-03-18
申请人： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
发明人： Atsushi Ohkubo , Satoru Okada , Tsuyoshi Fujimoto , Takeshi Koiso , Kiyofumi Muro , Michio Ohkubo , Yutaka Ohki
IPC分类号： H01S5/022 , H01S5/065 , H01S5/14 , H01S5/34 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/0652 , H01S5/0656 , H01S5/146 , H01S5/34
摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.
摘要翻译：提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

2. 发明授权

US06546032B1 Semiconductor laser apparatus 有权
标题翻译：半导体激光装置
公开(公告)号：US06546032B1
公开(公告)日：2003-04-08
申请号：US09644080
申请日：2000-08-23
申请人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
发明人： Yasuo Oeda , Satoru Okada , Kouichi Igarashi , Yumi Naito , Kiyofumi Muro , Takeshi Koiso , Yoshikazu Yamada , Atsushi Okubo , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/34313 , H01S5/34353
摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.
摘要翻译：在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

3. 发明授权

US06717186B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06717186B2
公开(公告)日：2004-04-06
申请号：US10230988
申请日：2002-08-30
申请人： Tsuyoshi Fujimoto , Kiyofumi Muro , Takeshi Koiso
发明人： Tsuyoshi Fujimoto , Kiyofumi Muro , Takeshi Koiso
IPC分类号： H01L3300
CPC分类号： H01S5/2231 , H01S5/2077 , H01S5/222
摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.
摘要翻译：实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

4. 发明授权

US6118799A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US6118799A
公开(公告)日：2000-09-12
申请号：US817602
申请日：1997-06-10
申请人： Atsushi Okubo , Yoshikazu Yamada , Tsuyoshi Fujimoto , Satoru Okada , Yumi Naito , Kiyofumi Muro
发明人： Atsushi Okubo , Yoshikazu Yamada , Tsuyoshi Fujimoto , Satoru Okada , Yumi Naito , Kiyofumi Muro
IPC分类号： H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343 , H01S3/085
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/2238 , H01S5/204 , H01S5/222 , H01S5/3432
摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.
摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28，由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

5. 再颁专利

USRE36431E Semiconductor laser element and laser device using the same element 失效
公开(公告)号：USRE36431E
公开(公告)日：1999-12-07
申请号：US971106
申请日：1997-11-14
申请人： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
发明人： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
IPC分类号： H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/34 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/32308 , H01S5/3421 , H01S5/3428 , H01S5/3432
摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

6. 发明授权

US5467364A Semiconductor laser element and laser device using the same element 失效
标题翻译：半导体激光元件和使用相同元件的激光器件
公开(公告)号：US5467364A
公开(公告)日：1995-11-14
申请号：US287802
申请日：1994-08-09
申请人： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
发明人： Kiyofumi Muro , Tsuyoshi Fujimoto , Yuji Yoshida , Yoshikazu Yamada , Shoji Ishizaka
IPC分类号： H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/32308 , H01S5/3421 , H01S5/3428 , H01S5/3432
摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.
摘要翻译：本发明的半导体激光器具有由以下部分构成的元件的结构：载体块层，从在元件的表面沿垂直方向形成的截面中的双方形成的有源层的外侧形成，用于降低导光功能活性层; 在所述载体块层和包层之间的外侧提供波导引导层，使得波导层夹在包层之间。本发明克服了传统的弱引导激光和LOC结构激光器在设计用于控制引导模式的装置方面的困境。本发明还解决了获得更高输出和辐射束的低色散并改善光束轮廓的问题。

7. 发明授权

US5764668A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5764668A
公开(公告)日：1998-06-09
申请号：US363834
申请日：1994-12-27
申请人： Shoji Ishizaka , Kiyofumi Muro , Tsuyoshi Fujimoto , Yoshikazu Yamada
发明人： Shoji Ishizaka , Kiyofumi Muro , Tsuyoshi Fujimoto , Yoshikazu Yamada
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S2301/18 , H01S5/2004 , H01S5/2009 , H01S5/3211 , H01S5/3409
摘要： To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6
摘要翻译：为了克服传统弱波导激光和SCH结构激光器中经受的波导模式控制中的器件设计困境，实现了更高的输出和更低的辐射束色散，并改善了有源层两侧的波导模式提供用于降低有源层的波导功能的载流子阻挡层，并且在载流子阻挡层的两个外侧设置波导层，并且在波导层的两个外侧设置包层，活性层为层叠的侧面阻挡层和夹在其间的量子阱层或侧面阻挡层以及夹在其间的量子阱层和阻挡层，量子阱层的组成为GayIn1-yAs（0.6

8. 发明授权

US06822990B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06822990B2
公开(公告)日：2004-11-23
申请号：US10129550
申请日：2002-05-08
申请人： Takeshi Koiso , Tsuyoshi Fujimoto
发明人： Takeshi Koiso , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： H01S5/16 , B82Y20/00 , H01S5/164 , H01S5/168 , H01S5/2231 , H01S5/305 , H01S5/34313 , H01S2304/04
摘要： A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.
摘要翻译：一种半导体激光器件包括：第一电流阻挡层，其形成为限定沿着前面的方向延伸的条状电流注入区域，激光从该方向发射，并且与之相对的后端面连接，形成第二电流阻挡层横向前端附近的条纹电流注入区域。第一电流阻挡层和第二电流阻挡层由相同的层制成。因此，在小面附近提供电流阻挡结构，其结构易于形成，不会对半导体激光器件造成损坏，并且降低性能下降，从而可以实现高端的COD水平和长期连续操作的高可靠性。

9. 发明授权

US06285699B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06285699B1
公开(公告)日：2001-09-04
申请号：US09163395
申请日：1998-09-30
申请人： Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
发明人： Yumi Naito , Satoru Okada , Tsuyoshi Fujimoto
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/2231 , H01S5/3432
摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.
摘要翻译：在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层，具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即，电流注入区域。以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

10. 发明授权

US06477191B1 Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser 有权
标题翻译：半导体激光器件，半导体激光器模块，稀土元素掺杂光纤放大器和光纤激光器
公开(公告)号：US06477191B1
公开(公告)日：2002-11-05
申请号：US09538728
申请日：2000-03-30
申请人： Satoru Okada , Tsuyoshi Fujimoto , Yasuo Oeda
发明人： Satoru Okada , Tsuyoshi Fujimoto , Yasuo Oeda
IPC分类号： H01S500
CPC分类号： H01S5/12
摘要： A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.
摘要翻译：半导体激光器件包括：有源层; 上波导层和夹在其间的有源层的下波导层; 夹层有源层和上下波导层的上下包层; 以及限定用于向有源层注入电流的电流注入区域的电流变窄层，其中在谐振腔方向上具有周期性结构的衍射光栅被掩埋在任何一个波导层中，衍射光栅存在于电流注入区域的至少一部分; 并且其中掩埋衍射光栅的波导层和与该波导层相邻的包层形成在谐振腔方向上基本上平坦的界面。利用该结构，实现了在耦合效率方面具有在设计和制造中具有较高灵活性的衍射光栅的波导结构，由此容易地提供具有更高再现性，产率和可靠性的动态单模半导体激光器件。

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