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    • 3. 发明申请
    • STRUCTURE MANUFACTURING METHOD AND LIQUID DISCHARGE HEAD SUBSTRATE MANUFACTURING METHOD
    • 结构制造方法和液体放电头基板制造方法
    • US20120282715A1
    • 2012-11-08
    • US13521694
    • 2011-01-13
    • Atsunori TerasakiMasahiko KubotaRyoji KanriYoshiyuki Fukumoto
    • Atsunori TerasakiMasahiko KubotaRyoji KanriYoshiyuki Fukumoto
    • H01L21/00
    • B41J2/1603B41J2/1623B41J2/1628B41J2/1629B41J2/1631B41J2/1634B41J2/1639B41J2/1642
    • A method for processing a silicon substrate includes providing a combination of a first silicon substrate, a second silicon substrate, and an intermediate layer including a plurality of recessed portions, which is provided between the first silicon substrate and the second silicon substrate, forming a first through hole that goes through the first silicon substrate by executing etching of the first silicon substrate on a surface of the first silicon substrate opposite to a bonding surface with the intermediate layer by using a first mask, and exposing a portion of the intermediate layer corresponding to the plurality of recessed portions of the intermediate layer, forming a plurality of openings on the intermediate layer by removing a portion constituting a bottom of the plurality of recessed portions, and forming a second through hole that goes through the second silicon substrate by executing second etching of the second silicon substrate by using the intermediate layer on which the plurality of openings are formed as a mask.
    • 一种处理硅衬底的方法,包括提供第一硅衬底,第二硅衬底和包括多个凹陷部分的中间层的组合,其设置在第一硅衬底和第二硅衬底之间,形成第一衬底 通过使用第一掩模在所述第一硅衬底的与所述中间层的接合表面相对的表面上执行所述第一硅衬底的表面的蚀刻来穿过所述第一硅衬底的通孔,以及将与所述第一硅衬底相对应的所述中间层的一部分 中间层的多个凹部,通过除去构成多个凹部的底部的部分,在中间层上形成多个开口,并且通过执行第二蚀刻形成穿过第二硅衬底的第二通孔 的第二硅衬底通过使用其上的中间层 形成多个开口作为掩模。