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1. 发明授权

US06000830A System for applying recipe of semiconductor manufacturing apparatus 失效
标题翻译：应用半导体制造装置配方的系统
公开(公告)号：US06000830A
公开(公告)日：1999-12-14
申请号：US840453
申请日：1997-04-18
申请人： Atsushi Asano , Yoshikatsu Miura
发明人： Atsushi Asano , Yoshikatsu Miura
IPC分类号： G06F19/00
CPC分类号： G05B19/41855 , G05B2219/31088 , G05B2219/45031 , H01L21/67276 , Y02P90/185 , Y02P90/20
摘要： A system for applying recipes of semiconductor manufacturing apparatuses includes a plurality of apparatus controllers respectively arranged for semiconductor manufacturing apparatus, a host computer commonly connected to the apparatus controllers to store process recipes, and a group controller which is commonly connected to the apparatus controllers through a channel different from channels which connect the apparatus controllers to the host computer, and is connected to the host computer through a dedicated channel to directly exchange information with the host computer. The host computer sends process recipes to the respective apparatus controllers, writes/reads out a recipe in/from the group controller through the dedicated channel, and reads out a recipe history therefrom through the dedicated channel. The apparatus controllers respectively operate the semiconductor manufacturing apparatuses on the basis of the process recipes sent from the host computer. The group controller stores a history of a process recipe used by the semiconductor manufacturing apparatus.
摘要翻译：用于应用半导体制造装置的配方的系统包括分别布置用于半导体制造装置的多个装置控制器，与设备控制器共同连接以存储处理配方的主计算机，以及通过连接到装置控制器的组控制器通道不同于将设备控制器连接到主机的通道，并且通过专用通道连接到主计算机，以直接与主机交换信息。主计算机将处理配方发送到相应的装置控制器，通过专用信道在组控制器中/从组控制器读出配方，并通过专用信道读出配方历史。设备控制器基于从主计算机发送的处理配方分别操作半导体制造设备。组控制器存储半导体制造装置使用的处理配方的历史。

2. 发明授权

US5097547A Vibration absorbing device for structure 失效
标题翻译：结构振动吸收装置
公开(公告)号：US5097547A
公开(公告)日：1992-03-24
申请号：US573846
申请日：1990-08-28
申请人： Naoki Tanaka , Kuniaki Sato , Mikio Kobayashi , Koji Ishii , Toshiyuki Fukimoto , Yoshikatsu Miura , Toshikazu Yamada
发明人： Naoki Tanaka , Kuniaki Sato , Mikio Kobayashi , Koji Ishii , Toshiyuki Fukimoto , Yoshikatsu Miura , Toshikazu Yamada
IPC分类号： E04B1/98 , F16F15/08
CPC分类号： F16F15/08 , E04B1/98
摘要： A vibration absorbing device to be secured between structural and non-structural members of a framed structure. An outer ring may be secured to a structural member and an inner ring is concentrically positioned within said outer ring and may be secured to a non-structural member. Radial spokes interconnecting the inner and outer rings are adapted to elasto-plastically deform when one ring is arcuately shifted relative to the other ring responsive to vibration of the inner and/or outer ring, thereby absorbing the energy of vibration.
摘要翻译：一种固定在框架结构的结构构件和非结构构件之间的振动吸收装置。外环可以固定到结构构件上，并且内环同心地定位在所述外环内并且可以固定到非结构构件。内环和外环相互连接的径向轮辐适应弹性塑性变形，当一个环相对于另一个环弧形移动时，响应于内环和/或外环的振动，从而吸收振动的能量。

3. 发明授权

US08358880B2 Hybrid coupling structure of the short range plasmon polariton and conventional dielectric waveguide, a coupling structure of the long range plasmon polariton and conventional dielectric waveguide, and applications thereof 有权
标题翻译：短距离等离子体激元和常规电介质波导的混合耦合结构，远距离等离子体激元和常规电介质波导的耦合结构及其应用
公开(公告)号：US08358880B2
公开(公告)日：2013-01-22
申请号：US12639549
申请日：2009-12-16
申请人： Fang Liu , Rui-Yuan Wan , Yi-Dong Huang , Xue Feng , Wei Zhang , Jiang De Peng , Yoshikatsu Miura , Daisuke Niwa , Dai Ohnishi
发明人： Fang Liu , Rui-Yuan Wan , Yi-Dong Huang , Xue Feng , Wei Zhang , Jiang De Peng , Yoshikatsu Miura , Daisuke Niwa , Dai Ohnishi
IPC分类号： G02F1/035
CPC分类号： G01N21/553 , B82Y20/00 , G01N21/43 , G01N21/7703 , G02B6/1226 , G02F1/035 , G02F2001/0144 , G02F2203/10
摘要： The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.
摘要翻译：本发明提供了一种短距离表面等离子体激元和传统电介质波导的混合耦合结构，包括电介质基底层，位于所述电介质基底层上的电介质波导层，位于所述电介质波导层上的耦合匹配层以及形成在所述耦合匹配层上的用于传导短距离表面等离子体激元的短距离表面等离子体波导部分。本发明还提供了一种远距离表面等离子体激元和介质波导的耦合结构，其中包括电介质基底层，电介质波导层，耦合匹配层和远距离表面等离子体激元波导部分。

4. 发明申请

US20120027038A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 有权
标题翻译：二维光子晶体激光
公开(公告)号：US20120027038A1
公开(公告)日：2012-02-02
申请号：US13192852
申请日：2011-07-28
申请人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
发明人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
IPC分类号： H01S5/323
CPC分类号： H01S5/105 , H01S5/1231 , H01S5/18316 , H01S5/18319 , H01S5/187 , H01S5/3013 , H01S2301/17
摘要： A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0
摘要翻译：根据本发明的二维光子晶体激光器包括具有由AlαGa1-αAs（0 <α<1）或（Al＆bgr; Ga1-bgr））γIn1-γP（...）形成的基体的二维光子晶体层15 0 <=＆bgr; <1,0 <γ<1），周期性地布置有修正的折射率区域（空气孔）151，以及通过外延法在二维光子晶体层15上形成的外延生长层16。由于AlαGa1-αAs和（Al＆bgr; Ga1-bgr）γIn1-γP即使在高温下也是固体，所以在形成外延生长层16的过程中，空气孔151不会变形，作为谐振器的三维光子晶体层15可以保持在高水平。

5. 发明授权

US06282457B1 Device for controlling treating station 有权
标题翻译：控制处理站装置
公开(公告)号：US06282457B1
公开(公告)日：2001-08-28
申请号：US09202040
申请日：1998-12-07
申请人： Yoshikatsu Miura , Masaya Nagata , Junji Harada
发明人： Yoshikatsu Miura , Masaya Nagata , Junji Harada
IPC分类号： G06F1900
CPC分类号： H01L21/67276 , H01L21/67173 , H01L21/67184 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A control section 20 incorporated in a coating/developing unit 2 is connected to a host computer 4, while a control section 30 incorporated in an exposure unit 3 is connected to the control section 30 of the coating/developing unit 2. Communication with the host computer 4 is performed by the coating/developing unit 2. The control of transfer of a wafer between the coating/developing unit and the exposure unit is executed using a timing signal which is independent of a process instruction output from the host computer 4. The host computer controls the coating/developing unit and the exposure unit using the control section of the coating/developing unit. Supply of instructions to the exposure unit 3 or collection of information therefrom is centrally controlled on the coating/developing unit 2 side.
摘要翻译：并入在涂布/显影单元2中的控制部分20连接到主计算机4，而包含在曝光单元3中的控制部分30连接到涂布/显影单元2的控制部分30。与主机通信计算机4由涂覆/显影单元2执行。使用与从主计算机4输出的处理指令无关的定时信号来执行在涂覆/显影单元和曝光单元之间转印晶片的控制。主机使用涂布/显影单元的控制部分控制涂布/显影单元和曝光单元。向涂布/显影单元2侧集中控制对曝光单元3的指示或信息的收集。

6. 发明授权

US08619830B2 Photonic crystal surface emission laser 有权
标题翻译：光子晶体表面发射激光
公开(公告)号：US08619830B2
公开(公告)日：2013-12-31
申请号：US13571985
申请日：2012-08-10
申请人： Susumu Noda , Seita Iwahashi , Toshiyuki Nobuoka , Takui Sakaguchi , Eiji Miyai , Wataru Kunishi , Dai Ohnishi , Kazuya Nagase , Yoshikatsu Miura
发明人： Susumu Noda , Seita Iwahashi , Toshiyuki Nobuoka , Takui Sakaguchi , Eiji Miyai , Wataru Kunishi , Dai Ohnishi , Kazuya Nagase , Yoshikatsu Miura
IPC分类号： H01S5/183
CPC分类号： H01S5/105 , H01S5/0425 , H01S5/18
摘要： A photonic crystal surface emission laser includes an active layer, and a photonic crystal layer made of a plate-shaped slab provided with modified refractive index area having a refractive index different from that of the slab, the modified refractive index areas being arranged on each of the lattice points of a first rhombic-like lattice and a second rhombic-like lattice in which both diagonals are mutually parallel and only one diagonal is of a different length, wherein ax1, ax2, ay, and n satisfy the following inequality:  1 a x ⁢ ⁢ 1 - 1 a x ⁢ ⁢ 2  ( 1 a x ⁢ ⁢ 1 + 1 a x ⁢ ⁢ 2 ) 2 + ( 2 a y ) 2 ≤ 1 n .
摘要翻译：光子晶体表面发射激光器包括有源层和由具有折射率不同于板的折射率区域的具有改性折射率区域的板状板制成的光子晶体层，所述改性折射率区域被布置在两个对角线相互平行且只有一个对角线具有不同长度的第一菱形晶格和第二菱形晶格的晶格点，其中ax1，ax2，ay和n满足以下不等式：1 （1 ax⁢1 + 1斧2）2 +（2 ay）2 <= 1 n。

7. 发明授权

US08048385B2 Sensing chip 有权
标题翻译：感应芯片
公开(公告)号：US08048385B2
公开(公告)日：2011-11-01
申请号：US12346950
申请日：2008-12-31
申请人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
发明人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
IPC分类号： G01N21/75
CPC分类号： G01N21/553 , G01N21/41 , G01N21/7703
摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
摘要翻译：提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质金属膜或带状金属。介电缓冲层附着在薄金属膜或带状金属上。金属薄膜或带状金属和缓冲层夹在两个电介质层之间。在上部电介质层的表面形成孔作为测量槽。

8. 发明授权

US08035810B2 Surface plasmon resonance sensor chip 有权
标题翻译：表面等离子体共振传感器芯片
公开(公告)号：US08035810B2
公开(公告)日：2011-10-11
申请号：US12365307
申请日：2009-02-04
申请人： Atsushi Tazuke , Daisuke Niwa , Yoshikatsu Miura , Dai Ohnishi
发明人： Atsushi Tazuke , Daisuke Niwa , Yoshikatsu Miura , Dai Ohnishi
IPC分类号： G01N21/01
CPC分类号： G01N21/553 , G01N21/7703 , G01N33/54373 , G01N2021/7776 , G01N2021/7783
摘要： A surface plasmon resonance sensor chip includes: a first dielectric layer; a metal layer disposed on the first dielectric layer; and a second dielectric layer covering the metal layer, the chip being provided with an opening that makes a part of a surface on the side of the second dielectric layer of the metal layer be exposed, and allows a measurement sample and the surface on the side of the second dielectric layer to contact each other, wherein an organic molecule film is provided at least one of between the first dielectric layer and the metal layer, and between the metal layer and the second dielectric layer.
摘要翻译：表面等离子体共振传感器芯片包括：第一介电层; 设置在所述第一电介质层上的金属层; 以及覆盖所述金属层的第二电介质层，所述芯片设置有使金属层的第二电介质层侧的表面的一部分露出的开口，并且允许测量样品和侧面上的表面的第二电介质层彼此接触，其中在所述第一介电层和所述金属层之间以及所述金属层和所述第二介电层之间的至少一个上设置有机分子膜。

9. 发明申请

US20100310205A1 Hybrid Coupling Structure of the short Range Plasmon Polariton and Conventional Dielectric Waveguide, A Coupling Structure of the Long Range Plasmon Polariton and Conventional Dielectric Waveguide, and Applications Thereof 有权
标题翻译：短距离等离子体极化和常规介质波导的混合耦合结构，长距离等离子体极化和常规介质波导的耦合结构及其应用
公开(公告)号：US20100310205A1
公开(公告)日：2010-12-09
申请号：US12639549
申请日：2009-12-16
申请人： Fan Liu , Rui-Yuan Wan , Yi-Dong Huang , Xue Feng , Wei Zhang , Jiang De Peng , Yoshikatsu Miura , Daisuke Niwa , Dai Ohnishi
发明人： Fan Liu , Rui-Yuan Wan , Yi-Dong Huang , Xue Feng , Wei Zhang , Jiang De Peng , Yoshikatsu Miura , Daisuke Niwa , Dai Ohnishi
IPC分类号： G02B6/26 , G02F1/01
CPC分类号： G01N21/553 , B82Y20/00 , G01N21/43 , G01N21/7703 , G02B6/1226 , G02F1/035 , G02F2001/0144 , G02F2203/10
摘要： The present invention provides a hybrid coupling structure of a short range surface plasmon polariton and a conventional dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer positioned on the said dielectric substrate layer, a coupling matching layer positioned on the said dielectric waveguide layer and a short range surface plasmon waveguide portion, formed on the said coupling matching layer, for conducting the short range surface plasmon polariton. The present invention also provides a coupling structure of a long range surface plasmon polariton and a dielectric waveguide, including a dielectric substrate layer, a dielectric waveguide layer, a coupling matching layer and a long range surface plasmon waveguide portion upward from below respectively.
摘要翻译：本发明提供了一种短距离表面等离子体激元和传统电介质波导的混合耦合结构，包括电介质基底层，位于所述电介质基底层上的电介质波导层，位于所述电介质波导层上的耦合匹配层以及形成在所述耦合匹配层上的用于传导短距离表面等离子体激元的短距离表面等离子体波导部分。本发明还提供了一种远距离表面等离子体激元和介质波导的耦合结构，其中包括电介质基底层，电介质波导层，耦合匹配层和远距离表面等离子体激元波导部分。

10. 发明授权

US09130348B2 Two-dimensional photonic crystal laser 有权
标题翻译：二维光子晶体激光器
公开(公告)号：US09130348B2
公开(公告)日：2015-09-08
申请号：US13192852
申请日：2011-07-28
申请人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
发明人： Susumu Noda , Takui Sakaguchi , Kazuya Nagase , Wataru Kunishi , Eiji Miyai , Yoshikatsu Miura , Dai Ohnishi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/10 , H01S5/187
CPC分类号： H01S5/105 , H01S5/1231 , H01S5/18316 , H01S5/18319 , H01S5/187 , H01S5/3013 , H01S2301/17
摘要： A two-dimensional photonic crystal laser according to the present invention includes a two-dimensional photonic crystal layer 15 having a base body made of AlαGa1-αAs (0
摘要翻译：根据本发明的二维光子晶体激光器包括具有由AlαGa1-αAs（0 <α<1）或（Al＆bgr; Ga1-bgr））γIn1-γP（...）形成的基体的二维光子晶体层15 0 <=＆bgr; <1,0 <γ<1），周期性地布置有修正的折射率区域（空气孔）151，以及通过外延法在二维光子晶体层15上形成的外延生长层16。由于AlαGa1-αAs和（Al＆bgr; Ga1-bgr）γIn1-γP即使在高温下也是固体，所以在形成外延生长层16的过程中，空气孔151不会变形，作为谐振器的三维光子晶体层15可以保持在高水平。

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