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1. 发明授权

US6090732A Zinc-doped tricalcium phosphate ceramic material 有权
标题翻译：掺锌磷酸三钙陶瓷材料
公开(公告)号：US6090732A
公开(公告)日：2000-07-18
申请号：US199333
申请日：1998-11-25
申请人： Atsuo Ito , Noboru Ichinose , Kenji Ojima , Pierre Layrolle , Haruo Kawamura
发明人： Atsuo Ito , Noboru Ichinose , Kenji Ojima , Pierre Layrolle , Haruo Kawamura
IPC分类号： A61K9/00 , A61F2/00 , A61F2/30 , A61L27/00 , A61L27/12 , C01B25/32 , C04B35/447 , C01B25/222 , A61F2/28
CPC分类号： A61L27/12 , A61F2002/30968 , A61F2310/00293
摘要： A tricalcium-phosphate-based prosthetic material is disclosed, which is a sintered ceramic body mainly consisting of tricalcium phosphate containing a limited amount of zinc, which is a known element having an osteogenesis-promoting effect, in the form of a solid solution. By virtue of the limited content of zinc and the form of solid solution in which zinc is contained, the inventive material exhibits an osteogenesis-promoting effect without toxicity. The ceramic body is prepared, preferably, by a process in which a tricalcium phosphate powder containing 0.015-8.00% by weight of zinc is diluted by the addition of hydroxyapatite and/or tricalcium phosphate free from zinc in such a proportion as to give a (Ca+Zn)/P molar ratio of 1.55 to 1.65 and the powder blend is shaped and subjected to sintering.
摘要翻译：公开了一种基于磷酸三钙的假体材料，其是以固体形式形式主要由含有有限量的锌的磷酸三钙组成的烧结陶瓷体，其是具有成骨促进作用的已知元素。由于锌的含量有限，含锌的固溶体形式，本发明的材料表现出无毒性的成骨促进作用。优选通过以下方法制备陶瓷体，其中通过加入不含锌的羟基磷灰石和/或磷酸三钙来稀释含有0.015-8.00重量％的锌的磷酸三钙粉末，其比例为（ Ca + Zn）/ P摩尔比为1.55〜1.65，将粉末混合物成形并进行烧结。

2. 发明申请

US20050013874A1 Suspension or particle-solvent mixture system of zinc-containing calcium phosphate microparticles and therapeutic agent for treating zinc deficiency 审中-公开
标题翻译：含锌磷酸钙微粒的悬浮液或颗粒 - 溶剂混合体系及治疗锌缺乏症的治疗剂
公开(公告)号：US20050013874A1
公开(公告)日：2005-01-20
申请号：US10802429
申请日：2004-03-15
申请人： Atsuo Ito , Makoto Otsuka , Noboru Ichinose , Tokoha Sakurai , Koushirou Fukasawa , Michimasa Kamo
发明人： Atsuo Ito , Makoto Otsuka , Noboru Ichinose , Tokoha Sakurai , Koushirou Fukasawa , Michimasa Kamo
IPC分类号： A61K9/10 , A61K9/14 , A61K9/16 , A61K31/565 , A61K31/593 , A61K31/663 , A61K33/06 , A61K33/30 , A61K33/42 , A61K38/23 , A61K47/04 , A61K47/10 , A61K47/34 , A61K47/44 , A61P3/02 , A61P19/08 , A61P19/10 , A61K7/16
CPC分类号： A61K9/1611 , A61K9/10 , A61K9/143 , A61K33/30 , A61K2300/00
摘要： A suspension or a particle-solvent mixture system, which contains microparticles of zinc-containing calcium phosphate with particular chemical composition, specifically, microparticles of sparingly soluble zinc-containing calcium phosphate, and a therapeutic agent for treating zinc deficiency are provided. Particulary, a suspension or particle-solvent mixture system is prepared by mixing microparticles of zinc-containing calcium phosphate consisting of from 0.6 ppm to 13% by weight of zinc, 33-57% by weight of P2O5, 10-65% by weight of CaO and 0-28% by weight of H2O with a water-miscible or water-immiscible solvent. Such a suspension or particle-solvent mixture system can be used as a therapeutic agent for treating zinc deficiency.
摘要翻译：提供了含有特定化学成分的含锌磷酸钙的微粒，特别是微溶性含锌磷酸钙微粒和治疗锌缺乏症的治疗剂的悬浮液或粒子 - 溶剂混合体系。通过将由0.6ppm至13重量％的锌组成的含锌磷酸钙的微粒，33-57重量％的P2O5，10-65重量％的磷酸钙， CaO和0-28重量％的H 2 O与水混溶或与水不混溶的溶剂。这种悬浮液或颗粒 - 溶剂混合物体系可用作治疗锌缺乏症的治疗剂。

3. 发明申请

US20140014182A1 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：太阳能电池模块及其制造方法
公开(公告)号：US20140014182A1
公开(公告)日：2014-01-16
申请号：US14008919
申请日：2012-05-31
申请人： Tomoyoshi Furihata , Atsuo Ito , Hyung-Bae Kim , Minoru Igarashi , Masakatsu Hotta , Tsutomu Nakamura
发明人： Tomoyoshi Furihata , Atsuo Ito , Hyung-Bae Kim , Minoru Igarashi , Masakatsu Hotta , Tsutomu Nakamura
IPC分类号： H01L31/048 , H01L31/18 , H01L31/052
CPC分类号： H01L31/0481 , B32B17/10036 , B32B17/10091 , B32B17/10302 , B32B17/10798 , B32B2307/302 , B32B2307/412 , B32B2307/558 , B32B2307/704 , B32B2307/712 , B32B2457/00 , H01L31/0488 , H01L31/052 , H01L31/0543 , H01L31/0547 , Y02B10/12 , Y02E10/52
摘要： The present invention relates to a solar cell module which is characterized in that: a light-transmitting elastomer member and a solar cell element are arranged in a space between a panel of a transparent member upon which sunlight is incident and a panel of a thermally conductive member which is arranged on the side opposite to the sunlight incidence side in such a manner that the light-transmitting elastomer member is closer to the sunlight incidence side; and the solar cell element is pressed by the light-transmitting elastomer member toward the panel of a thermally conductive member so that the solar cell element is compression bonded thereto. This solar cell module is most suitable as a solar cell module that has excellent heat dissipation of a cell, the temperature of which is increased due to sunlight or a hot spot, and a structure that suppresses the production cost.
摘要翻译：太阳能电池模块技术领域本发明涉及一种太阳能电池模块，其特征在于：透光性弹性体部件和太阳能电池元件配置在入射了太阳光的透明部件的面板和导热性板构件，其布置在与太阳光入射侧相对的一侧，使得透光弹性体构件更靠近太阳光入射侧; 并且太阳能电池元件被透光弹性体部件压向导热部件的面板，使得太阳能电池元件被压接在其上。该太阳能电池模块最适合作为太阳能电池模块，其具有由于阳光或热点而导致温度升高的电池的良好散热性，以及抑制生产成本的结构。

4. 发明授权

US08263478B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08263478B2
公开(公告)日：2012-09-11
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

5. 发明授权

US08227290B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227290B2
公开(公告)日：2012-07-24
申请号：US11976026
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
发明人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/186 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.
摘要翻译：一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

6. 发明授权

US08227289B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227289B2
公开(公告)日：2012-07-24
申请号：US11976020
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/186 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面硅层。

7. 发明申请

US20120165451A1 SILICONE RUBBER COMPOSITION FOR OPTICAL SHEET, AND OPTICAL SHEET 失效
标题翻译：硅胶硅橡胶组合物和光学片
公开(公告)号：US20120165451A1
公开(公告)日：2012-06-28
申请号：US13338396
申请日：2011-12-28
申请人： Minoru Igarashi , Tsutomu Nakamura , Atsuo Ito , Tomoyoshi Furihata , Hyung-Bae Kim
发明人： Minoru Igarashi , Tsutomu Nakamura , Atsuo Ito , Tomoyoshi Furihata , Hyung-Bae Kim
IPC分类号： C08K5/54 , C08K3/36
CPC分类号： C08K3/36 , C08K5/5419 , C08K9/06 , Y02E10/52 , Y10T428/31663 , C08L83/04
摘要： Disclosed is a minable type silicone rubber composition including as an essential components:(A) 100 parts by weight of an organopolysiloxane represented by the following average compositional formula (I) and having a polymerization degree of at least 100; R1aSiO(4-a)/2 (I) wherein R1 are, identical or different, unsubstituted or substituted monovalent hydrocarbon groups, and a is a positive number of 1.95 to 2.05;(B) 70 to 150 parts by weight of fumed silica having a specific surface area of more than 200 m2/g;(C) 0.1 to 30 parts by weight of an organohydrogenpolysiloxane having at least two hydrogen atoms bonded to silicon atoms in one molecule; and(D) 0.1 to 10 parts by weight of a hydrosilylation reaction catalyst.
摘要翻译：公开了一种包含作为必要成分的微型硅橡胶组合物：（A）100重量份由以下平均组成式（I）表示的聚合度为至少100的有机聚硅氧烷; R1aSiO（4-a）/ 2（I）其中R1是相同或不同的未取代或取代的一价烃基，a是1.95〜2.05的正数; （B）70〜150重量份比表面积大于200m 2 / g的热解法二氧化硅; （C）0.1〜30重量份在1分子中具有与硅原子键合的氢原子中的至少2个氢原子的有机氢聚硅氧烷; 和（D）0.1〜10重量份的氢化硅烷化反应催化剂。

8. 发明授权

US08119903B2 Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08119903B2
公开(公告)日：2012-02-21
申请号：US11984182
申请日：2007-11-14
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , H01L31/0216 , B05D5/12
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/03921 , H01L31/056 , H01L31/0682 , H01L31/1892 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.
摘要翻译：公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

9. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

10. 发明申请

US20110290320A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 审中-公开
公开(公告)号：US20110290320A1
公开(公告)日：2011-12-01
申请号：US13137215
申请日：2011-07-28
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/0224 , H01L31/0256 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

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