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1. 发明申请

US20100081251A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100081251A1
公开(公告)日：2010-04-01
申请号：US12557545
申请日：2009-09-11
申请人： Atsuo ISOBE , Junpei MOMO , Naoki OKUNO
发明人： Atsuo ISOBE , Junpei MOMO , Naoki OKUNO
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1222 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light.
摘要翻译：用单一晶体半导体衬底照射加速离子以在单晶半导体衬底中形成脆化区域。单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合。在脆化区域分离单晶半导体衬底，以在基底衬底上形成半导体层。进行热处理以减少半导体层中的缺陷。然后用激光照射半导体层。

2. 发明申请

US20110186958A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110186958A1
公开(公告)日：2011-08-04
申请号：US13017740
申请日：2011-01-31
申请人： Naoki OKUNO , Hajime TOKUNAGA
发明人： Naoki OKUNO , Hajime TOKUNAGA
IPC分类号： H01L21/762 , H01L29/02
CPC分类号： H01L21/762 , H01L29/02
摘要： A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate.
摘要翻译：用离子照射接合衬底，形成脆化层，然后将接合衬底接合到基底。接着，在接合基板的区域的另一部分的温度以上的温度下加热接合接合基板的一部分，或者对接合接合基板整体进行第一次热处理在第一个温度; 并且在高于第一温度的第二温度下对接合的接合基板的区域的一部分进行第二热处理，使得接合基板的分离从接合基板的一部分到另一部分的脆性层中的键合衬底的区域。因此，在基底基板上形成半导体层。

3. 发明申请

US20110092050A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110092050A1
公开(公告)日：2011-04-21
申请号：US12901005
申请日：2010-10-08
申请人： Akihisa SHIMOMURA , Naoki OKUNO , Masaki KOYAMA , Yasuhiro JINBO
发明人： Akihisa SHIMOMURA , Naoki OKUNO , Masaki KOYAMA , Yasuhiro JINBO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/1229 , H01L27/1251 , H01L27/1262 , H01L27/1266 , H01L29/66772
摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.
摘要翻译：通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

4. 发明申请

US20100330779A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US20100330779A1
公开(公告)日：2010-12-30
申请号：US12821545
申请日：2010-06-23
申请人： Naoki OKUNO , Akihisa SHIMOMURA , Hajime TOKUNAGA
发明人： Naoki OKUNO , Akihisa SHIMOMURA , Hajime TOKUNAGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02686 , H01L21/84
摘要： A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate.
摘要翻译：用键合衬底照射加速离子以在接合衬底中形成脆化区域; 在接合基板或基底基板的表面上形成绝缘层; 接合衬底和基底基板彼此接合，绝缘层插入其间; 在接合基板和基底基板的一部分上形成接合基板和基板基板未被接合并被接合基板封闭的区域和基板; 通过热处理在脆化区域分离粘合基材; 并且在基底基板上形成半导体层。

5. 发明申请

US20110124179A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110124179A1
公开(公告)日：2011-05-26
申请号：US12949837
申请日：2010-11-19
申请人： Hajime TOKUNAGA , Naoki OKUNO
发明人： Hajime TOKUNAGA , Naoki OKUNO
IPC分类号： H01L21/30
CPC分类号： H01L21/30604 , H01L21/02032 , H01L21/76254 , H01L21/84
摘要： The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween and a space which is surrounded by the groove portion in the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate at the embrittled region, so that the semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween.
摘要翻译：对设置有沟槽部分的半导体衬底照射离子，使得半导体衬底中形成脆化区域，半导体衬底和基底衬底之间以绝缘层彼此接合，并且由形成半导体衬底和基底衬底中的沟槽部分，并且进行热处理以在脆化区域分离半导体衬底，使得半导体层在绝缘层之间形成在基底衬底上。

6. 发明申请

US20100291752A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US20100291752A1
公开(公告)日：2010-11-18
申请号：US12768872
申请日：2010-04-28
申请人： Naoki OKUNO
发明人： Naoki OKUNO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate.
摘要翻译：证明了以高产率形成具有降低的表面粗糙度的硅层的SOI衬底的方法。该方法包括将基底基板如玻璃基板和诸如单晶半导体基板的接合基板彼此接合的步骤，其中基底基板与接合基板的接合不能执行的区域设置在它们之间的界面。具体地，该方法的示例是：将加压离子照射到键合衬底; 在所述接合衬底上形成绝缘层; 形成在接合基板的表面的一部分中不能进行接合的区域; 将所述接合基板和所述基板彼此之间的绝缘层彼此接合; 并将所述键合衬底与所述基底衬底分开，在所述基底衬底上留下半导体层。

7. 发明申请

US20100120224A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100120224A1
公开(公告)日：2010-05-13
申请号：US12615613
申请日：2009-11-10
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Yasuhiro JINBO , Naoki OKUNO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Yasuhiro JINBO , Naoki OKUNO
IPC分类号： H01L21/46
CPC分类号： H01L21/84 , H01L21/76254
摘要： An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film.
摘要翻译：本发明的目的是提供一种制造包括其平面取向为（100）的单晶硅膜和具有高产率的平面取向为（110）的单晶硅膜的SOI衬底的方法。其平面取向为（100）的第一单晶硅衬底被掺杂有第一离子以形成第一脆化层。其平面取向为（110）的第二单晶硅衬底被掺杂有第二离子以选择性地形成第二脆化层。通过第一热处理，仅第一单晶硅衬底的一部分沿着第一脆化层分离，从而形成第一单晶硅膜。除去未形成第二脆性层的第二单晶硅衬底的区域。通过第二热处理沿第二脆化层分离第二单晶硅衬底的一部分，从而形成第二单晶硅膜。

8. 发明申请

US20100062586A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100062586A1
公开(公告)日：2010-03-11
申请号：US12552493
申请日：2009-09-02
申请人： Hideto OHNUMA , Naoki OKUNO
发明人： Hideto OHNUMA , Naoki OKUNO
IPC分类号： H01L21/20
CPC分类号： H01L27/1274 , H01L21/02422 , H01L21/02532 , H01L21/67115 , H01L27/1214 , H01L27/1218 , H01L29/04 , H01L29/42384 , H01L29/4908
摘要： It is an object to provide a homogeneous semiconductor film in which variation in the size of crystal grains is reduced. Alternatively, it is an object to provide a homogeneous semiconductor film and to achieve cost reduction. By introducing a glass substrate over which an amorphous semiconductor film is formed into a treatment atmosphere set at more than or equal to a temperature that is needed for crystallization, rapid heating due to heat conduction from the treatment atmosphere is performed so that the amorphous semiconductor film is crystallized. More specifically, for example, after the temperature of the treatment atmosphere is increased in advance to a temperature that is needed for crystallization, the substrate over which the semiconductor film is formed is put into the treatment atmosphere.
摘要翻译：本发明的目的是提供一种均匀的半导体膜，其中晶粒尺寸的变化减小。或者，目的是提供均匀的半导体膜并实现成本降低。通过将形成非晶半导体膜的玻璃基板导入设定为结晶所需温度以上的处理气氛，进行由于来自处理气氛的热传导而引起的快速加热，使得非晶半导体膜结晶。更具体地，例如，在将处理气氛的温度预先提高到结晶所需的温度之后，将形成有半导体膜的基板投入处理气氛。

9. 发明申请

US20120012986A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE 有权
标题翻译：制造SOI衬底和SOI衬底的方法
公开(公告)号：US20120012986A1
公开(公告)日：2012-01-19
申请号：US13244394
申请日：2011-09-24
申请人： Naoki OKUNO
发明人： Naoki OKUNO
IPC分类号： H01L29/06
CPC分类号： H01L21/76254
摘要： A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate.
摘要翻译：证明了以高产率形成具有降低的表面粗糙度的硅层的SOI衬底的方法。该方法包括将基底基板如玻璃基板和诸如单晶半导体基板的接合基板彼此接合的步骤，其中基底基板与接合基板的接合不能执行的区域设置在它们之间的界面。具体地，该方法的示例是：将加压离子照射到键合衬底; 在所述接合衬底上形成绝缘层; 形成在接合基板的表面的一部分中不能进行接合的区域; 将所述接合基板和所述基板彼此之间的绝缘层彼此接合; 并将所述键合衬底与所述基底衬底分开，在所述基底衬底上留下半导体层。

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