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1. 发明申请

US20090036629A1 POLYSILAZANE PERHYDRIDE SOLUTION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：聚硅氧烷高分子溶液及使用其制造半导体器件的方法
公开(公告)号：US20090036629A1
公开(公告)日：2009-02-05
申请号：US12146336
申请日：2008-06-25
申请人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Jakeshi Hoshi , Katsuhiko Tachibana
发明人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Jakeshi Hoshi , Katsuhiko Tachibana
IPC分类号： C08G77/12
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31053 , H01L21/316 , H01L21/76224
摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

2. 发明申请

US20080090988A1 Method for handling polysilazane or polysilazane solution, polysilazane or polysilazane solution, and method for producing semiconductor device 审中-公开
标题翻译：聚硅氮烷或聚硅氮烷溶液的处理方法，聚硅氮烷或聚硅氮烷溶液以及半导体装置的制造方法
公开(公告)号：US20080090988A1
公开(公告)日：2008-04-17
申请号：US11905049
申请日：2007-09-27
申请人： Keisuke Nakazawa , Katsuhiko Tachibana , Takeshi Hoshi , Masahiro Kiyotoshi , Atsuko Kawasaki , Osamu Arisumi
发明人： Keisuke Nakazawa , Katsuhiko Tachibana , Takeshi Hoshi , Masahiro Kiyotoshi , Atsuko Kawasaki , Osamu Arisumi
IPC分类号： C08G77/12 , H01L21/31
CPC分类号： H01L21/3125 , C08G77/62 , C09D183/16 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337
摘要： A method for handling polysilazane or a polysilazane solution includes synthesizing polysilazane and preparing the polysilazane solution in a first space isolated from outside air. The first space is mainly supplied with air from which amine, basic substance, volatile organic compound and acidic substance are eliminated.
摘要翻译：聚硅氮烷或聚硅氮烷溶液的处理方法包括合成聚硅氮烷并在与外部空气隔离的第一空间中制备聚硅氮烷溶液。第一个空间主要供应有空气，从中除去胺，碱性物质，挥发性有机化合物和酸性物质。

3. 发明授权

US07407864B2 Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same 有权
标题翻译：聚硅氮杂己烷溶液及其制造方法
公开(公告)号：US07407864B2
公开(公告)日：2008-08-05
申请号：US11175305
申请日：2005-07-07
申请人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Takeshi Hoshi , Katsuhiko Tachibana
发明人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Takeshi Hoshi , Katsuhiko Tachibana
IPC分类号： H01L21/76
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31053 , H01L21/316 , H01L21/76224
摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

4. 发明申请

US20060205165A1 Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same 有权
标题翻译：聚硅氮杂己烷溶液及其制造方法
公开(公告)号：US20060205165A1
公开(公告)日：2006-09-14
申请号：US11175305
申请日：2005-07-07
申请人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Takeshi Hoshi , Katsuhiko Tachibana
发明人： Atsuko Kawasaki , Masahiro Kiyotoshi , Keisuke Nakazawa , Osamu Arisumi , Takeshi Hoshi , Katsuhiko Tachibana
IPC分类号： H01L21/76
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31053 , H01L21/316 , H01L21/76224
摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底中形成元件隔离沟槽，在其上形成元件隔离沟槽的半导体衬底上涂覆聚硅氮烷二次酐溶液以形成聚硅氮烷过渡膜，所述聚硅氮烷过硼酸盐溶液包含二丁基醚具有30ppm以下的丁醇浓度，溶解在二丁基醚中的聚硅氮烷二烷基化钠，在含有水蒸汽的气氛中使聚硅氮烷二次酐膜氧化，形成二氧化硅膜，选择性地除去二氧化硅膜离开硅元件隔离沟中的二氧化硅膜形成元件隔离绝缘膜。

5. 发明授权

US07514338B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07514338B2
公开(公告)日：2009-04-07
申请号：US11544747
申请日：2006-10-10
申请人： Osamu Arisumi , Masahiro Kiyotoshi
发明人： Osamu Arisumi , Masahiro Kiyotoshi
IPC分类号： H01L21/76
CPC分类号： H01L27/11524 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a semiconductor device, includes preparing a work piece having a trench on its main surface side, forming a polymer film containing a polymer containing silicon, hydrogen and nitrogen on the main surface of the work piece, holding the work piece with the polymer film in a first atmosphere, which contains oxygen, and whose oxygen partial pressure is set in a range of 16 to 48 Torr, oxidizing the polymer film in a second atmosphere containing water vapor to form an oxide film containing a silicon oxide as a main component, after holding the work piece in the first atmosphere, and removing an upper portion of the oxide film to remain a lower portion of the oxide film in the trench.
摘要翻译：一种制造半导体器件的方法，包括在其主表面侧准备具有沟槽的工件，在工件的主表面上形成含有含有硅，氢和氮的聚合物的聚合物膜，将工件与聚合物膜在含有氧的第一气氛中，其氧分压设定在16〜48托的范围内，在含有水蒸气的第二气氛中氧化聚合物膜，形成含有氧化硅为主要的氧化膜在第一气氛中保持工件之后，除去氧化膜的上部以保留在沟槽中的氧化膜的下部。

6. 发明授权

US07416955B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07416955B2
公开(公告)日：2008-08-26
申请号：US11439993
申请日：2006-05-25
申请人： Osamu Arisumi , Masahiro Kiyotoshi
发明人： Osamu Arisumi , Masahiro Kiyotoshi
IPC分类号： H01L21/76 , H01L21/31
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/31612 , H01L21/76801 , H01L21/76826 , H01L21/76828 , H01L21/76837
摘要： A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second insulating film containing silicon oxide as a main ingredient from the polymer solution layer, wherein forming the second insulating film includes forming silicon oxide by a reaction between the polymer and water adhered to the first insulating film.
摘要翻译：一种制造半导体器件的方法，包括在下面的区域上形成含有氧化硅作为主要成分的第一绝缘膜，将水粘附到第一绝缘膜上，在水溶性聚合物层上形成含有含硅聚合物的聚合物溶液层，粘合的第一绝缘膜，并且从聚合物溶液层形成含有氧化硅作为主要成分的第二绝缘膜，其中形成所述第二绝缘膜包括通过所述聚合物和附着到所述第一绝缘膜的水之间的反应形成氧化硅。

7. 发明申请

US20060281336A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20060281336A1
公开(公告)日：2006-12-14
申请号：US11439993
申请日：2006-05-25
申请人： Osamu Arisumi , Masahiro Kiyotoshi
发明人： Osamu Arisumi , Masahiro Kiyotoshi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/022 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/31612 , H01L21/76801 , H01L21/76826 , H01L21/76828 , H01L21/76837
摘要： A method of manufacturing a semiconductor device, includes forming a first insulating film containing silicon oxide as a main ingredient, on an underlying region, adhering water to the first insulating film, forming a polymer solution layer containing a silicon-containing polymer on the water-adhered first insulating film, and forming a second insulating film containing silicon oxide as a main ingredient from the polymer solution layer, wherein forming the second insulating film includes forming silicon oxide by a reaction between the polymer and water adhered to the first insulating film.

8. 发明授权

US08119196B2 Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method 有权
标题翻译：半导体制造装置，液体容器和半导体装置的制造方法
公开(公告)号：US08119196B2
公开(公告)日：2012-02-21
申请号：US12659071
申请日：2010-02-24
申请人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda
发明人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda
IPC分类号： B05D3/12
CPC分类号： B05B9/04 , B05B9/047 , B05C11/08 , B05C11/10
摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.
摘要翻译：半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

9. 发明申请

US20100159710A1 Semiconductor manufacturing apparatus, liquid container, and semiconductor device manufacturing method 有权
标题翻译：半导体制造装置，液体容器和半导体装置的制造方法
公开(公告)号：US20100159710A1
公开(公告)日：2010-06-24
申请号：US12659071
申请日：2010-02-24
申请人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda
发明人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda
IPC分类号： H01L21/469
CPC分类号： B05B9/04 , B05B9/047 , B05C11/08 , B05C11/10
摘要： A semiconductor manufacturing apparatus comprises a discharge portion discharging a coating liquid onto a substrate; a gas supply tube supplying an inert gas into a liquid container that contains the coating liquid, and pressurizing an interior of the liquid container; a coating liquid supply tube airtightly supplying the coating liquid from the liquid container to the discharge portion using pressurization from the gas supply tube; a first connecting portion capable of attaching and detaching the liquid container to and from the coating liquid supply tube; a second connecting portion capable of attaching and detaching the liquid container to and from the gas supply tube; and a solvent supply tube supplying a solvent, which can dissolve the coating liquid, to the first connecting portion.
摘要翻译：半导体制造装置包括将涂布液排出到基板上的排出部; 气体供给管，将惰性气体供给到容纳所述涂布液的液体容器内，对所述液体容器的内部进行加压; 涂料液体供给管通过来自气体供给管的加压将涂布液从液体容器密封地供给到排出部; 第一连接部分，其能够将液体容器附接到涂布液供应管和从涂布液供应管分离; 第二连接部分，其能够将液体容器附接到气体供应管和从气体供应管排出; 以及将能够溶解涂布液的溶剂供给到第一连接部的溶剂供给管。

10. 发明申请

US20100055869A1 Semiconductor device and method of manufacturing same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100055869A1
公开(公告)日：2010-03-04
申请号：US12588087
申请日：2009-10-02
申请人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
发明人： Osamu Arisumi , Masahiro Kiyotoshi , Katsuhiko Hieda , Yoshitaka Tsunashima
IPC分类号： H01L21/762
CPC分类号： H01L27/11521 , H01L27/11524
摘要： A method of manufacturing a semiconductor device comprises forming a trench in a semiconductor substrate, forming a first insulating film having a first recessed portion in the trench, forming a coating film so as to fill the first recessed portion therewith, transforming the coating film into a second insulating film, planarizing the second insulating film to expose the first insulating film and the second insulating film, removing at least the second insulating film from the first recessed portion to moderate an aspect ratio for the first recessed portion formed in the trench, thereby forming a second recessed portion therein, and forming a third insulating film on a surface of the semiconductor substrate so as to fill the second recessed portion therewith.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底中形成沟槽，在沟槽中形成具有第一凹陷部分的第一绝缘膜，形成涂膜以便将其涂覆在第一凹部中，将涂膜转变为第二绝缘膜，平坦化第二绝缘膜以暴露第一绝缘膜和第二绝缘膜，至少从第一凹部去除第二绝缘膜，以调节形成在沟槽中的第一凹部的纵横比，由此形成在其中形成第二凹部，在半导体衬底的表面上形成第三绝缘膜，以便填充第二凹部。

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