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1. 发明申请

US20070190807A1 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US20070190807A1
公开(公告)日：2007-08-16
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

2. 发明授权

US07482286B2 Method for forming dielectric or metallic films 有权
标题翻译：电介质或金属膜的形成方法
公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译：通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。可以获得MsiN，MSI和/或MSION膜。这些膜可用作高k电介质膜。

3. 发明申请

US20050196970A1 Novel deposition of high-k MSiON dielectric films 有权
标题翻译：高k MSONON介电薄膜的新型沉积
公开(公告)号：US20050196970A1
公开(公告)日：2005-09-08
申请号：US10939269
申请日：2004-09-10
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/448 , H01L21/31 , H01L21/314
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.
摘要翻译：本公开内容讨论了在半导体器件中形成栅极电介质，更具体地说，在硅衬底上形成薄的高k电介质膜，通常使用化学气相沉积或原子层沉积工艺。本发明在单个成膜步骤中使用气相硅前体与液相金属前体，氮源和用于沉积金属氮氧化硅的氧源（MSiON）结合形成高k电介质膜）所需的化学计量的薄膜。气相硅前驱体不与允许独立控制金属源和硅源的馈送的金属配合。因此，M / Si比可以容易地在宽范围内变化。此外，气相硅前体，液相金属前体，氮源和氧源是无氯的，消除了电介质膜中的氯和反应室和排气系统中的产物的氯化物的不期望的影响。此外，气相硅前体，氮源和氧源是无碳的，最小化在电介质膜中的碳的引入。

4. 发明申请

US20060084281A1 Novel deposition of high-k MSiON dielectric films 审中-公开
标题翻译：高k MSONON介电薄膜的新型沉积
公开(公告)号：US20060084281A1
公开(公告)日：2006-04-20
申请号：US11288699
申请日：2005-11-28
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
IPC分类号： H01L21/31
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.
摘要翻译：本公开内容讨论了在半导体器件中形成栅极电介质，更具体地说，在硅衬底上形成薄的高k电介质膜，通常使用化学气相沉积或原子层沉积工艺。本发明在单个成膜步骤中使用气相硅前体与液相金属前体，氮源和用于沉积金属氮氧化硅的氧源（MSiON）结合形成高k电介质膜）所需的化学计量的薄膜。气相硅前驱体不与允许独立控制金属源和硅源的馈送的金属配合。因此，M / Si比可以容易地在宽范围内变化。此外，气相硅前体，液相金属前体，氮源和氧源是无氯的，消除了电介质膜中的氯和反应室和排气系统中的产物的氯化物的不期望的影响。此外，气相硅前体，氮源和氧源是无碳的，最小化在电介质膜中的碳的引入。

5. 发明授权

US07098150B2 Method for novel deposition of high-k MSiON dielectric films 有权
标题翻译：用于新型沉积高k MSONON介电膜的方法
公开(公告)号：US07098150B2
公开(公告)日：2006-08-29
申请号：US10939269
申请日：2004-09-10
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a high-k dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a liquid phase metal precursor, a nitrogen source and an oxygen source for the deposition of a metal silicon oxy nitride (MSiON) film of desired stochiometry. The vapor phase silicon precursor is not coordinated to a metal allowing independent control over feeding of the metal source and the silicon source. Thus, the M/Si ratio can be easily varied over a wide range. Furthermore, the vapor phase silicon precursor, liquid phase metal precursor, nitrogen source and oxygen sources are chlorine free, eliminating the undesirable effects chlorine in the dielectric film and chloride by products in the reaction chamber and exhaust system. Furthermore, the vapor phase silicon precursor, nitrogen source and oxygen sources are carbon free, minimizing the incorporation of carbon in the dielectric film.
摘要翻译：本公开内容讨论了在半导体器件中形成栅极电介质，更具体地说，在硅衬底上形成薄的高k电介质膜，通常使用化学气相沉积或原子层沉积工艺。本发明在单个成膜步骤中使用气相硅前体与液相金属前体，氮源和用于沉积金属氮氧化硅的氧源（MSiON）结合形成高k电介质膜）所需的化学计量的薄膜。气相硅前驱体不与允许独立控制金属源和硅源的馈送的金属配合。因此，M / Si比可以容易地在宽范围内变化。此外，气相硅前体，液相金属前体，氮源和氧源是无氯的，消除了电介质膜中的氯和反应室和排气系统中的产物的氯化物的不期望的影响。此外，气相硅前体，氮源和氧源是无碳的，最小化在电介质膜中的碳的引入。

6. 发明申请

US20060051975A1 Novel deposition of SiON dielectric films 审中-公开
标题翻译： SiON介电薄膜的新型沉积
公开(公告)号：US20060051975A1
公开(公告)日：2006-03-09
申请号：US10935759
申请日：2004-09-07
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik
IPC分类号： H01L21/31
CPC分类号： C23C16/308 , H01L21/0214 , H01L21/02271 , H01L21/3145
摘要： This disclosure discusses the forming of gate dielectrics in semi conductor devices, and more specifically to forming thin high-k dielectric films on silicon substrates typically using chemical vapor deposition or atomic layer deposition processes. The current invention forms a dielectric film in a single film-forming step using a vapor phase silicon precursor in conjunction with a nitrogen source and an oxygen source for the deposition of a silicon oxy nitride (SiON) film of desired stochiometry. The vapor phase silicon precursor, nitrogen source and oxygen source are carbon and chlorine free, eliminating the undesirable effects of carbon and chlorine in the dielectric film or solid deposits in the chamber exhaust.
摘要翻译：本公开内容讨论了在半导体器件中形成栅极电介质，更具体地说，在硅衬底上形成薄的高k电介质膜，通常使用化学气相沉积或原子层沉积工艺。本发明在单一成膜步骤中使用气相硅前体与氮源和用于沉积所需化学计量学的氧化硅（SiON）膜的氧源）形成电介质膜。气相硅前体，氮源和氧源是无碳和无氯的，消除了电介质膜中碳和氯的不良影响或室内排气中的固体沉积物。

7. 发明申请

US20070232511A1 Cleaning solutions including preservative compounds for post CMP cleaning processes 审中-公开
标题翻译：清洁溶液，包括用于后CMP清洁工艺的防腐剂
公开(公告)号：US20070232511A1
公开(公告)日：2007-10-04
申请号：US11478314
申请日：2006-06-30
申请人： Matthew Fisher , Ashutosh Misra
发明人： Matthew Fisher , Ashutosh Misra
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/48 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3281
摘要： Post CMP cleaning solutions are provided including at least one cleaning agent comprising an organic acid compound, at least one preservative compound that substantially minimizes or prevents microbial growth in the cleaning solution, and at least one amine compound. The preservative compound can be another organic acid compound that protects the cleaning solution against microbial growth. The cleaning solutions preferably have a pH ranging from about 2 to about 7.
摘要翻译：提供后CMP清洁溶液，其包括至少一种包含有机酸化合物的清洁剂，至少一种使洗涤溶液中微生物生长最小化或防止至少一种胺化合物的防腐化合物。防腐剂可以是保护清洁溶液免受微生物生长的另一种有机酸化合物。清洁溶液优选具有约2至约7的pH。

8. 发明申请

US20060234888A1 Acidic chemistry for Post-CMP cleaning 有权
标题翻译：后期CMP清洗的酸性化学
公开(公告)号：US20060234888A1
公开(公告)日：2006-10-19
申请号：US11450843
申请日：2006-06-09
申请人： Ashutosh Misra , Matthew Fisher
发明人： Ashutosh Misra , Matthew Fisher
IPC分类号： C11D7/32
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/2072 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/2096 , C11D3/221 , C11D3/28 , C11D3/33 , C11D3/3427 , C11D3/3472 , C11D3/3481 , C11D3/349 , C11D7/264 , C11D7/265 , C11D7/267 , C11D7/3245 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C23G1/103
摘要： This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.
摘要翻译：本公开内容讨论了半导体器件制造期间晶片的化学机械平面化（CMP）之后的半导体晶片的清洁。公开了用于后CMP清洗含有金属，特别是铜互连的晶片的酸性化学品。剩余的浆料颗粒，特别是铜或其他金属颗粒，从晶片表面去除，而不会明显地蚀刻金属，使沉积物沉积在表面上，或者给晶片带来显着的有机（如碳）污染，同时也保护金属不被氧化，腐蚀。此外，存在至少一种强螯合剂以使溶液中的金属离子复合，有助于从电介质去除金属并防止再沉积到晶片上。使用酸性化学，可以将CMP之后使用的清洗溶液的pH与在晶片表面上使用的最后一种浆料的pH相匹配。

9. 发明申请

US20050197266A1 Acidic chemistry for post-CMP cleaning 有权
标题翻译：后CMP清洁的酸性化学
公开(公告)号：US20050197266A1
公开(公告)日：2005-09-08
申请号：US10956272
申请日：2004-10-01
申请人： Ashutosh Misra , Matthew Fisher
发明人： Ashutosh Misra , Matthew Fisher
IPC分类号： C11D3/20 , C11D3/22 , C11D3/28 , C11D3/33 , C11D3/34 , C11D7/26 , C11D7/32 , C11D7/34 , C11D11/00 , C23G1/10 , B08B3/00
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/2072 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/2096 , C11D3/221 , C11D3/28 , C11D3/33 , C11D3/3427 , C11D3/3472 , C11D3/3481 , C11D3/349 , C11D7/264 , C11D7/265 , C11D7/267 , C11D7/3245 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C23G1/103
摘要： This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.
摘要翻译：本公开内容讨论了半导体器件制造期间晶片的化学机械平面化（CMP）之后的半导体晶片的清洁。公开了用于后CMP清洗含有金属，特别是铜互连的晶片的酸性化学品。剩余的浆料颗粒，特别是铜或其他金属颗粒，从晶片表面去除，而不会明显地蚀刻金属，使沉积物沉积在表面上，或者给晶片带来显着的有机（如碳）污染，同时也保护金属不被氧化，腐蚀。此外，存在至少一种强螯合剂以使溶液中的金属离子复合，有助于从电介质去除金属并防止再沉积到晶片上。使用酸性化学，可以将CMP之后使用的清洗溶液的pH与在晶片表面上使用的最后一种浆料的pH相匹配。

10. 发明申请

US20050181961A1 Alkaline chemistry for post-CMP cleaning 有权
标题翻译：用于CMP后清洁的碱性化学
公开(公告)号：US20050181961A1
公开(公告)日：2005-08-18
申请号：US10956273
申请日：2004-10-01
申请人： Ashutosh Misra , Matthew Fisher
发明人： Ashutosh Misra , Matthew Fisher
IPC分类号： C11D1/62 , C11D3/00 , C11D3/02 , C11D3/20 , C11D3/22 , C11D3/28 , C11D3/30 , C11D3/32 , C11D3/33 , C11D3/34 , C11D7/06 , C11D7/26 , C11D7/32 , C11D7/34 , C11D11/00 , C23G1/20 , C11D1/00
CPC分类号： C23G1/20 , C11D1/62 , C11D3/0073 , C11D3/044 , C11D3/2068 , C11D3/2072 , C11D3/2075 , C11D3/2082 , C11D3/2086 , C11D3/221 , C11D3/28 , C11D3/30 , C11D3/32 , C11D3/33 , C11D3/3427 , C11D3/3472 , C11D3/3481 , C11D3/349 , C11D7/06 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , H01L21/02074
摘要： This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.
摘要翻译：本公开内容讨论了半导体器件制造期间晶片的化学机械平面化（CMP）之后的半导体晶片的清洁。公开了用于后CMP清洗含有金属，特别是铜互连的晶片的碱性化学。剩余的浆料颗粒，特别是铜或其他金属颗粒，从晶片表面去除，而不会显着蚀刻金属，从而在表面上留下沉积物，或对晶片造成显着的污染，同时也保护金属免受氧化和腐蚀。此外，存在至少一种强螯合剂以使溶液中的金属离子复合，有助于从电介质去除金属并防止再沉积到晶片上。

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