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    • 2. 发明授权
    • Magnetic disc unit system
    • 磁盘单元系统
    • US4727439A
    • 1988-02-23
    • US860983
    • 1986-05-08
    • Toshiyuki HarunaMotohiro NakaiAsao SasamotoKazuo NakagoshiHideaki Amano
    • Toshiyuki HarunaMotohiro NakaiAsao SasamotoKazuo NakagoshiHideaki Amano
    • G11B27/10G11B5/09G11B5/55G11B20/12G11B21/08
    • G11B21/085G11B5/5547
    • A magnetic disc unit capable of improving the throughput by minimizing the seek time for the magnetic head. The magnetic disc unit is operative to respond to a cylinder address instructed by the host unit to move the magnetic head to the corresponding cylinder position on the magnetic disc comprises a cylinder address/position assignment selecting circuit for changing the address instructed by the host unit into a new address so as to desirably change cylinder address/position assignments. A head location controlling circuit is responsive to the new address to move the magnetic head to a cylinder position corresponding to the new address. In one mode, the cylinder address/position assignment selecting circuit performs renewal of cylinder addresses such that the magnetic head passes along the magnetic disc through all of the cylinder positions designated by cylinder addresses by making a return trip between inner and outer circumferences of the magnetic disc. In another mode, the cylinder address/position assignment selecting circuit performs renewal of cylinder addresses that when the innermost cylinder address is substituted for a cylinder address instructed by the host unit, the access time for the substitutive cylinder address is minimized.
    • 一种磁盘单元,其能够通过最小化磁头的寻道时间来提高吞吐量。 磁盘单元可操作以响应由主机单元指示的气缸地址将磁头移动到磁盘上的相应气​​缸位置,该气缸地址/位置分配选择电路用于将由主机单元指示的地址改变为 一个新的地址,以便期望地改变圆柱体地址/位置分配。 头位置控制电路响应于新地址以将磁头移动到对应于新地址的气缸位置。 在一种模式中,气缸地址/位置分配选择电路执行气缸地址的更新,使得磁头通过圆柱体地址指定的所有气缸位置沿着磁盘传递,通过在磁体的内周和外周之间进行回程 光盘。 在另一模式中,气缸地址/位置分配选择电路执行气缸地址的更新,当最内圆柱地址代替由主机单元指示的气缸地址时,代替气缸地址的存取时间被最小化。
    • 7. 发明授权
    • Plasma processing method
    • 等离子体处理方法
    • US06392350B1
    • 2002-05-21
    • US09656214
    • 2000-09-06
    • Hideaki Amano
    • Hideaki Amano
    • H05H116
    • C23C16/511C23C16/401C23C16/402H01J37/32192H01J37/3266H01L21/0212H01L21/02164H01L21/0217H01L21/022H01L21/02211H01L21/02274H01L21/31116H01L21/312H01L21/3127H01L21/31629H01L21/3185H01L21/32136H01L21/76804
    • There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil and an auxiliary electromagnetic coil during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition, whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower. Therefore, the heat gain into the wafer is greater than that during the thin-film deposition, so that it is possible to shorten the preheat time.
    • 提供了一种能够在预热进行之后沉积薄膜时缩短预热时间的方法。 将预热和薄膜沉积期间的主电磁线圈和辅助电磁线圈的电流值设定为彼此不同,以改变所获得的磁场的形状,使得磁场具有小的磁通量 密度虽然在薄膜沉积期间具有更高的均匀性,而磁场具有大的磁通密度,尽管其在预热期间具有较低的均匀性。 结果,在薄膜沉积期间在晶片的平面中产生基本上均匀的等离子体,使得可以进行均匀的薄膜沉积。 另一方面,在预热期间,尽管其均匀性较低,但是产生具有比薄膜沉积期间更大的密度的等离子体。 因此,进入晶片的热增益大于薄膜沉积期间的热增益,从而可以缩短预热时间。
    • 9. 发明授权
    • Plasma treatment system and method
    • 等离子体处理系统及方法
    • US06333269B2
    • 2001-12-25
    • US09153141
    • 1998-09-14
    • Yoko NaitoHideaki Amano
    • Yoko NaitoHideaki Amano
    • H01L213065
    • H01J37/32192C23C16/511H01J37/32678H01L21/02131H01L21/02164H01L21/022H01L21/02211H01L21/02274H01L21/31612H01L21/31629
    • It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A main electromagnetic coil 5 is provided outside of a plasma chamber 21 so as to be movable vertically by a lifting shaft 52. When plasma is produced in a vacuum vessel 2 by the electron cyclotron resonance between a microwave and a magnetic field to continuously deposit a film of a two-layer structure, which comprises an SiOF film and an SiO2 film, on a wafer W with the produced plasma, a process for forming the SiOF film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of a transmission window 23 by 139 mm, and a process for forming the SiO2 film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of the transmission 23 by 157 mm.
    • 本发明的目的是提高所获得的磁场的形状的自由度,以在第一和第二膜连续地形成在待处理的基板上时增强第一和第二膜的厚度的面内均匀性。 主电磁线圈5设置在等离子体室21的外部,以便通过提升轴52可垂直移动。当通过微波和磁场之间的电子回旋共振在真空容器2中产生等离子体以连续沉积 在具有所产生的等离子体的晶片W上包括SiOF膜和SiO 2膜的两层结构的膜,进行形成SiOF膜的工艺,同时主电磁线圈5被布置成使得下电极 线圈5位于比透射窗23的下表面低139mm的位置,并且在主电磁线圈5被布置成使得线圈的下表面被布置的同时执行用于形成SiO 2膜的工艺 5位于比变速器23的下表面低157mm的位置。
    • 10. 发明授权
    • Program correcting method and system
    • 程序校正方法和系统
    • US06205577B1
    • 2001-03-20
    • US08611760
    • 1996-03-08
    • Makiko ShinoharaHideaki Amano
    • Makiko ShinoharaHideaki Amano
    • G06F1300
    • G06F8/71G06F8/656
    • Correction of a program which resides on a main storage and which is simultaneously callable by a plurality of command processors is performed by minimizing the stop time of a computer system without reloading a program. A particular command processor calls a correction execution program which corrects a program in accordance with a program correction command. The correction execution program reads program correction information, sets correction execution declaration information in all entries of other command processor in the correction execution declaration area of the main storage and after clearing all entries, the correction execution program corrects the program in accordance with the program correction information. The correction execution program sets correction completion reporting information in all entries for all of the other command processors in the correction completion reporting area of the main storage. The correction execution program waits for the correction completion reporting area to be cleared, at which time it sends the corrected program to the external storage. The program to be corrected calls a correction wait program, which recognizes the command processor which has called the correction wait program itself, checks an entry of the appropriate command processor in the correction execution declaration area.
    • 通过最小化计算机系统的停止时间而不重新加载程序来执行驻留在主存储器上并由多个命令处理器同时调用的程序的校正。 特定的命令处理器调用根据程序校正命令来校正程序的校正执行程序。 校正执行程序读取程序校正信息,在主存储器的校正执行声明区域中的其他命令处理器的所有条目中设置校正执行声明信息,并且在清除所有条目之后,校正执行程序根据程序校正来校正程序 信息。 校正执行程序在主存储器的校正完成报告区域中的所有其他命令处理器的所有条目中设置校正完成报告信息。 校正执行程序等待校正完成报告区域被清除,此时将校正完成报告区域发送到外部存储器。 要校正的程序呼叫校正等待程序,其识别已经调用校正等待程序本身的命令处理器,在校正执行声明区域中检查适当的命令处理器的条目。