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1. 发明申请

US20080157875A1 Method and System for Precise Current Matching in Deep Sub-Micron Technology 有权
标题翻译：深亚微米技术精密电流匹配方法与系统
公开(公告)号：US20080157875A1
公开(公告)日：2008-07-03
申请号：US11618152
申请日：2006-12-29
申请人： Arya Behzad , Stephen Chi-Wang Au , Dandan Li
发明人： Arya Behzad , Stephen Chi-Wang Au , Dandan Li
IPC分类号： H03F3/04 , G05F3/02
CPC分类号： H03F3/04 , H03F1/301 , H03F3/345 , H03F3/45183 , H03F2200/462 , H03F2200/78 , H03F2203/45244 , H03F2203/45476
摘要： Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.
摘要翻译：深亚微米技术中精确电流匹配的方法和系统的方面可能包括调整电流镜以通过使用反馈电路来补偿MOSFET栅极漏电流。反馈电路可以由有源部件实现以产生有源反馈电路。如果要镜像的参考电流是嘈杂的，则可以通过引入耦合到当前镜子设计的低通滤波器来实现平滑效果。有源反馈可以包括放大器，其可以包括一个或多个放大器级。放大器可能放大偏置电压误差或偏置电流误差。此外，可以在反馈回路中使用跨阻放大器。电流镜的输出偏置电流在调节期间可以动态稳定。电流镜可以使用多个电流源。

2. 发明授权

US08093952B2 Method and system for precise current matching in deep sub-micron technology 有权
标题翻译：深亚微米技术精密电流匹配方法与系统
公开(公告)号：US08093952B2
公开(公告)日：2012-01-10
申请号：US11618152
申请日：2006-12-29
申请人： Arya Behzad , Stephen Chi-Wang Au , Dandan Li
发明人： Arya Behzad , Stephen Chi-Wang Au , Dandan Li
IPC分类号： H03F3/04 , H00G3/10
CPC分类号： H03F3/04 , H03F1/301 , H03F3/345 , H03F3/45183 , H03F2200/462 , H03F2200/78 , H03F2203/45244 , H03F2203/45476
摘要： Aspects of a method and system for precise current matching in deep sub-micron technology may include adjusting a current mirror to compensate for MOSFET gate leakage currents by using feedback circuits. The feedback circuits may be implemented from active components to create active feedback circuits. If the reference current to be mirrored is noisy, a smoothing effect may be achieved by introducing a low-pass filter coupled to the current mirror design. The active feedback may comprise amplifiers, which may comprise one or more amplifier stages. The amplifier may amplify either a bias voltage error or a bias current error. Furthermore, a transimpedance amplifier may be utilized in the feedback loop. The output bias current of the current mirror may be stabilized dynamically during adjusting. Multiple current sources may be utilized in the current mirrors.
摘要翻译：深亚微米技术中精确电流匹配的方法和系统的方面可能包括调整电流镜以通过使用反馈电路来补偿MOSFET栅极漏电流。反馈电路可以由有源部件实现以产生有源反馈电路。如果要镜像的参考电流是嘈杂的，则可以通过引入耦合到当前镜子设计的低通滤波器来实现平滑效果。有源反馈可以包括放大器，其可以包括一个或多个放大器级。放大器可能放大偏置电压误差或偏置电流误差。此外，可以在反馈回路中使用跨阻放大器。电流镜的输出偏置电流在调节期间可以动态稳定。电流镜可以使用多个电流源。

3. 发明申请

US20080136503A1 METHOD AND SYSTEM FOR A PROCESS SENSOR TO COMPENSATE SOC PARAMETERS IN THE PRESENCE OF IC PROCESS MANUFACTURING VARIATIONS 失效
标题翻译：用于在IC工艺制造变化中存在的方法和系统用于补偿SOC参数的过程传感器
公开(公告)号：US20080136503A1
公开(公告)日：2008-06-12
申请号：US11618900
申请日：2006-12-31
申请人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
发明人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
IPC分类号： G05F3/02
CPC分类号： H03F3/45475 , H03F2203/45048
摘要： Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
摘要翻译：公开了用于在存在IC工艺制造变化的情况下补偿SoC参数的工艺传感器的方法和系统的某些方面。一种方法的方面可以包括确定与单个集成电路内的至少一个晶体管相关联的工艺变化量。可以通过利用与工艺相关的电流，带隙电流和与晶体管的当前温度相关联的电流来补偿确定的工艺变化量。过程相关电流，带隙电流和与晶体管的当前温度相关联的电流可以被组合以产生输出电流。可以基于产生的输出电流来确定可变电阻器两端产生的电压。

4. 发明授权

US08237492B2 Method and system for a process sensor to compensate SOC parameters in the presence of IC process manufacturing variations 失效
标题翻译：用于在存在IC工艺制造变化的情况下补偿SOC参数的过程传感器的方法和系统
公开(公告)号：US08237492B2
公开(公告)日：2012-08-07
申请号：US11618900
申请日：2006-12-31
申请人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
发明人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
IPC分类号： G05F3/02
CPC分类号： H03F3/45475 , H03F2203/45048
摘要： Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
摘要翻译：公开了用于在存在IC工艺制造变化的情况下补偿SoC参数的工艺传感器的方法和系统的某些方面。一种方法的方面可以包括确定与单个集成电路内的至少一个晶体管相关联的工艺变化量。可以通过利用与工艺相关的电流，带隙电流和与晶体管的当前温度相关联的电流来补偿确定的工艺变化量。过程相关电流，带隙电流和与晶体管的当前温度相关联的电流可以被组合以产生输出电流。可以基于产生的输出电流来确定可变电阻器两端产生的电压。

5. 发明授权

US08456226B2 Method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations 失效
标题翻译：用于在存在IC工艺制造变化的情况下补偿SoC参数的过程传感器的方法和系统
公开(公告)号：US08456226B2
公开(公告)日：2013-06-04
申请号：US13545580
申请日：2012-07-10
申请人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
发明人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
IPC分类号： G05F3/02
CPC分类号： H03F3/45475 , H03F2203/45048
摘要： Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
摘要翻译：公开了用于在存在IC工艺制造变化的情况下补偿SoC参数的工艺传感器的方法和系统的某些方面。一种方法的方面可以包括确定与单个集成电路内的至少一个晶体管相关联的工艺变化量。可以通过利用与工艺相关的电流，带隙电流和与晶体管的当前温度相关联的电流来补偿确定的工艺变化量。过程相关电流，带隙电流和与晶体管的当前温度相关联的电流可以被组合以产生输出电流。可以基于产生的输出电流来确定可变电阻器两端产生的电压。

6. 发明申请

US20120274397A1 METHOD AND SYSTEM FOR A PROCESS SENSOR TO COMPENSATE SOC PARAMETERS IN THE PRESENCE OF IC PROCESS MANUFACTURING VARIATIONS 失效
标题翻译：用于在IC工艺制造变化中存在SOC过程传感器补偿SOC参数的方法和系统
公开(公告)号：US20120274397A1
公开(公告)日：2012-11-01
申请号：US13545580
申请日：2012-07-10
申请人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
发明人： Stephen Chi-Wang Au , Arya Behzad , Paul Chang
IPC分类号： G05F3/02
CPC分类号： H03F3/45475 , H03F2203/45048
摘要： Certain aspects of a method and system for a process sensor to compensate SoC parameters in the presence of IC process manufacturing variations are disclosed. Aspects of one method may include determining an amount of process variation associated with at least one transistor within a single integrated circuit. The determined amount of process variation may be compensated by utilizing a process dependent current, a bandgap current, and a current associated with a present temperature of the transistor. The process dependent current, the bandgap current and the current associated with the present temperature of the transistor may be combined to generate an output current. A voltage generated across a variable resistor may be determined based on the generated output current.
摘要翻译：公开了用于在存在IC工艺制造变化的情况下补偿SoC参数的工艺传感器的方法和系统的某些方面。一种方法的方面可以包括确定与单个集成电路内的至少一个晶体管相关联的工艺变化量。可以通过利用与工艺相关的电流，带隙电流和与晶体管的当前温度相关联的电流来补偿确定的工艺变化量。过程相关电流，带隙电流和与晶体管的当前温度相关联的电流可以被组合以产生输出电流。可以基于产生的输出电流来确定可变电阻器两端产生的电压。

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