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1. 发明申请

US20120222940A1 Method and Apparatus for Transporting Magnetic Fluids and Particles 有权
标题翻译：用于运输磁性液体和颗粒的方法和装置
公开(公告)号：US20120222940A1
公开(公告)日：2012-09-06
申请号：US13508094
申请日：2009-11-05
申请人： Arno Ehresmann
发明人： Arno Ehresmann
IPC分类号： B65G35/00 , B03C1/02 , F17D1/00
CPC分类号： B03C3/28 , B03C1/02 , Y10T137/0391 , Y10T137/8593
摘要： A method of transporting a magnetic fluid (104) or at least one magnetic particle (509, 510). The method comprises the steps of: providing a magnetic layer (102) with an asymmetric re-magnetization property; placing the magnetic fluid (104) or the magnetic particle(s) (509, 510) in the vicinity of the magnetic layer (102) so that they can magnetically interact with the magnetic layer (102); and applying an external magnetic field.
摘要翻译：一种输送磁性流体（104）或至少一个磁性颗粒（509,510）的方法。该方法包括以下步骤：提供具有不对称再磁化特性的磁性层（102）; 将磁性流体（104）或磁性颗粒（509,510）放置在磁性层（102）附近，使得它们可以与磁性层（102）磁性相互作用; 并施加外部磁场。

2. 发明授权

US09266119B2 Method and apparatus for transporting magnetic fluids and particles 有权
标题翻译：用于运输磁性流体和颗粒的方法和装置
公开(公告)号：US09266119B2
公开(公告)日：2016-02-23
申请号：US13508094
申请日：2009-11-05
申请人： Arno Ehresmann
发明人： Arno Ehresmann
IPC分类号： B03C1/02 , B01D35/06 , B03C3/28
CPC分类号： B03C3/28 , B03C1/02 , Y10T137/0391 , Y10T137/8593
摘要： A method of transporting a magnetic fluid (104) or at least one magnetic particle (509, 510). The method comprises the steps of: providing a magnetic layer (102) with an asymmetric re-magnetization property; placing the magnetic fluid (104) or the magnetic particle(s) (509, 510) in the vicinity of the magnetic layer (102) so that they can magnetically interact with the magnetic layer (102); and applying an external magnetic field.
摘要翻译：一种输送磁性流体（104）或至少一个磁性颗粒（509,510）的方法。该方法包括以下步骤：提供具有不对称再磁化特性的磁性层（102）; 将磁性流体（104）或磁性颗粒（509,510）放置在磁性层（102）附近，使得它们可以与磁性层（102）磁性相互作用; 并施加外部磁场。

3. 发明授权

US07825686B2 Reconfigurable magnetic logic-circuit array and methods for producing and operating such logic devices 有权
标题翻译：可重构磁逻辑电路阵列以及用于生产和操作这种逻辑器件的方法
公开(公告)号：US07825686B2
公开(公告)日：2010-11-02
申请号：US12452742
申请日：2008-07-20
申请人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
发明人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
IPC分类号： G06F7/38 , H03K19/173
CPC分类号： H03K19/168 , H03K19/18
摘要： The invention relates to a reconfigurable magnetic logic-circuit array having at least two magnetoresistive elements, each composed of at least two magnetic layers, which are separated from one another by an intermediate layer, in each instance, whereby one of the magnetic layers, as a reference layer, does not substantially change its magnetization under the influence of external magnetic fields, and the other magnetic layer, as a free layer, changes its magnetization perceptibly under the influence of external magnetic fields, and having at least one conductor for signal ports, with which conductor, when current is flowing, a first magnetic field can be generated that flips the magnetization of the free layers, and having a device for on-demand generation of a second variable magnetic field, which also influences the magnetoresistive elements. For this purpose, two such magnetoresistive elements are disposed adjacent to one another, whereby the magnetization of the two reference layers is oriented in opposite directions by means of preadjusted unidirectional anisotropy, and the magnetoresistive elements are interconnected with one another in such a manner that, as a result of the action of the first and second magnetic fields on the magnetoresistive elements, the switching behavior of all basic logic functions, especially the AND, OR, NAND, NOR, XOR or XNOR functions, can be induced on the basis of the resulting changes in the orientation of the magnetization of the free layers, and thus of the resistance of the magnetoresistive elements in the logic-circuit array.
摘要翻译：本发明涉及一种可重新配置的磁逻辑电路阵列，其具有至少两个磁阻元件，每个磁阻元件由至少两个磁性层组成，每个磁层通过中间层彼此分开，其中一个磁层作为参考层在外部磁场的影响下基本上不改变其磁化，另一个作为自由层的磁性层在外部磁场的影响下可感知地改变其磁化，并且具有用于信号端口的至少一个导体，当电流流过时，可以产生第一磁场，其可以翻转自由层的磁化，并且具有也影响磁阻元件的用于按需生成第二可变磁场的装置。为此，两个这样的磁阻元件彼此相邻设置，由此通过预调整的单向各向异性将两个参考层的磁化方向定向在相反的方向上，并且磁阻元件彼此互连，作为第一和第二磁场对磁阻元件的作用的结果，所有基本逻辑功能，特别是AND，OR，NAND，NOR，XOR或XNOR函数的转换行为可以基于导致自由层的磁化方向的变化，从而导致逻辑电路阵列中的磁阻元件的电阻的变化。

4. 发明申请

US20100225350A1 RECONFIGURABLE MAGNETIC LOGIC-CIRCUIT ARRAY AND METHODS FOR PRODUCING AND OPERATING SUCH LOGIC DEVICES 有权
标题翻译：可重新配置的磁性逻辑电路阵列以及生产和操作这种逻辑器件的方法
公开(公告)号：US20100225350A1
公开(公告)日：2010-09-09
申请号：US12452742
申请日：2008-07-20
申请人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
发明人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
IPC分类号： H03K19/173 , H01L21/00
CPC分类号： H03K19/168 , H03K19/18
摘要： The invention relates to a reconfigurable magnetic logic-circuit array having at least two magnetoresistive elements, each composed of at least two magnetic layers, which are separated from one another by an intermediate layer, in each instance, whereby one of the magnetic layers, as a reference layer, does not substantially change its magnetization under the influence of external magnetic fields, and the other magnetic layer, as a free layer, changes its magnetization perceptibly under the influence of external magnetic fields, and having at least one conductor for signal ports, with which conductor, when current is flowing, a first magnetic field can be generated that flips the magnetization of the free layers, and having a device for on-demand generation of a second variable magnetic field, which also influences the magnetoresistive elements. For this purpose, two such magnetoresistive elements are disposed adjacent to one another, whereby the magnetization of the two reference layers is oriented in opposite directions by means of preadjusted unidirectional anisotropy, and the magnetoresistive elements are interconnected with one another in such a manner that, as a result of the action of the first and second magnetic fields on the magnetoresistive elements, the switching behavior of all basic logic functions, especially the AND, OR, NAND, NOR, XOR or XNOR functions, can be induced on the basis of the resulting changes in the orientation of the magnetization of the free layers, and thus of the resistance of the magnetoresistive elements in the logic-circuit array.
摘要翻译：本发明涉及一种可重新配置的磁逻辑电路阵列，其具有至少两个磁阻元件，每个磁阻元件由至少两个磁性层组成，每个磁层通过中间层彼此分开，其中一个磁层作为参考层在外部磁场的影响下基本上不改变其磁化，另一个作为自由层的磁性层在外部磁场的影响下可感知地改变其磁化，并且具有用于信号端口的至少一个导体，当电流流过时，可以产生第一磁场，其可以翻转自由层的磁化，并且具有也影响磁阻元件的用于按需生成第二可变磁场的装置。为此，两个这样的磁阻元件彼此相邻设置，由此通过预调整的单向各向异性将两个参考层的磁化方向定向在相反的方向上，并且磁阻元件彼此互连，作为第一和第二磁场对磁阻元件的作用的结果，所有基本逻辑功能，特别是AND，OR，NAND，NOR，XOR或XNOR函数的转换行为可以基于导致自由层的磁化方向的变化，从而导致逻辑电路阵列中的磁阻元件的电阻的变化。

5. 发明授权

US06882145B2 Wheatstone bridge containing bridge elements, consisting of a spin-valve system and a method for producing the same 失效
标题翻译：含有桥式元件的惠斯登电桥，由自旋阀系统及其制造方法组成
公开(公告)号：US06882145B2
公开(公告)日：2005-04-19
申请号：US10297644
申请日：2001-06-07
申请人： Arno Ehresmann , Wolfgang-Dietrich Engel , Juergen Fassbender , Burkard Hillebrands , Roland Mattheis , Tim Mewes
发明人： Arno Ehresmann , Wolfgang-Dietrich Engel , Juergen Fassbender , Burkard Hillebrands , Roland Mattheis , Tim Mewes
IPC分类号： G01R33/09 , H01F10/00
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/12 , Y10T428/12375
摘要： The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (1, 3 or 2, 4) are provided with a doping of implantable ions in quantities of between 1.1012 and 5.1016 atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system. During the bombardment of selected bridge areas (1, 3) or surface areas, which are not provided with a covering (5), with a low dose of low-energy ions, whose strengths are sufficiently great to enable the is ions to penetrate the pinned ferromagnetic layer, all surface areas or bridge elements (1, 2, 3, 4) are exposed to a homogeneous, targeted magnetic field of sufficient strength.
摘要翻译：本发明涉及一种含有桥接元件的惠斯登电桥，除了其制造方法之外，还以常规方式连接并由自旋阀系统组成。本发明的目的是生产一种惠斯通电桥，其中彼此相邻的相应的半桥具有相应的非平行的偏磁化方向。为了实现这一点，不相邻（1,3或2,4）的各个桥接元件以可调离子的掺杂量设置在1.10×12 <！ - SIPO 原子/ cm 2。在所选择的桥梁区域（1,3）或没有设置有覆盖物（5）的表面区域的轰击期间，其具有足够大的强度以使得离子能够穿透固定铁磁层，所有表面区域或桥接元件（1,2,3,4）暴露于具有足够强度的均匀的目标磁场。

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