专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100225350A1 RECONFIGURABLE MAGNETIC LOGIC-CIRCUIT ARRAY AND METHODS FOR PRODUCING AND OPERATING SUCH LOGIC DEVICES 有权
标题翻译：可重新配置的磁性逻辑电路阵列以及生产和操作这种逻辑器件的方法
公开(公告)号：US20100225350A1
公开(公告)日：2010-09-09
申请号：US12452742
申请日：2008-07-20
申请人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
发明人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
IPC分类号： H03K19/173 , H01L21/00
CPC分类号： H03K19/168 , H03K19/18
摘要： The invention relates to a reconfigurable magnetic logic-circuit array having at least two magnetoresistive elements, each composed of at least two magnetic layers, which are separated from one another by an intermediate layer, in each instance, whereby one of the magnetic layers, as a reference layer, does not substantially change its magnetization under the influence of external magnetic fields, and the other magnetic layer, as a free layer, changes its magnetization perceptibly under the influence of external magnetic fields, and having at least one conductor for signal ports, with which conductor, when current is flowing, a first magnetic field can be generated that flips the magnetization of the free layers, and having a device for on-demand generation of a second variable magnetic field, which also influences the magnetoresistive elements. For this purpose, two such magnetoresistive elements are disposed adjacent to one another, whereby the magnetization of the two reference layers is oriented in opposite directions by means of preadjusted unidirectional anisotropy, and the magnetoresistive elements are interconnected with one another in such a manner that, as a result of the action of the first and second magnetic fields on the magnetoresistive elements, the switching behavior of all basic logic functions, especially the AND, OR, NAND, NOR, XOR or XNOR functions, can be induced on the basis of the resulting changes in the orientation of the magnetization of the free layers, and thus of the resistance of the magnetoresistive elements in the logic-circuit array.
摘要翻译：本发明涉及一种可重新配置的磁逻辑电路阵列，其具有至少两个磁阻元件，每个磁阻元件由至少两个磁性层组成，每个磁层通过中间层彼此分开，其中一个磁层作为参考层在外部磁场的影响下基本上不改变其磁化，另一个作为自由层的磁性层在外部磁场的影响下可感知地改变其磁化，并且具有用于信号端口的至少一个导体，当电流流过时，可以产生第一磁场，其可以翻转自由层的磁化，并且具有也影响磁阻元件的用于按需生成第二可变磁场的装置。为此，两个这样的磁阻元件彼此相邻设置，由此通过预调整的单向各向异性将两个参考层的磁化方向定向在相反的方向上，并且磁阻元件彼此互连，作为第一和第二磁场对磁阻元件的作用的结果，所有基本逻辑功能，特别是AND，OR，NAND，NOR，XOR或XNOR函数的转换行为可以基于导致自由层的磁化方向的变化，从而导致逻辑电路阵列中的磁阻元件的电阻的变化。

2. 发明授权

US07825686B2 Reconfigurable magnetic logic-circuit array and methods for producing and operating such logic devices 有权
标题翻译：可重构磁逻辑电路阵列以及用于生产和操作这种逻辑器件的方法
公开(公告)号：US07825686B2
公开(公告)日：2010-11-02
申请号：US12452742
申请日：2008-07-20
申请人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
发明人： Volker Hoeink , Dirk Meyners , Guenter Reiss , Jan Schmalhorst , Arno Ehresmann
IPC分类号： G06F7/38 , H03K19/173
CPC分类号： H03K19/168 , H03K19/18
摘要： The invention relates to a reconfigurable magnetic logic-circuit array having at least two magnetoresistive elements, each composed of at least two magnetic layers, which are separated from one another by an intermediate layer, in each instance, whereby one of the magnetic layers, as a reference layer, does not substantially change its magnetization under the influence of external magnetic fields, and the other magnetic layer, as a free layer, changes its magnetization perceptibly under the influence of external magnetic fields, and having at least one conductor for signal ports, with which conductor, when current is flowing, a first magnetic field can be generated that flips the magnetization of the free layers, and having a device for on-demand generation of a second variable magnetic field, which also influences the magnetoresistive elements. For this purpose, two such magnetoresistive elements are disposed adjacent to one another, whereby the magnetization of the two reference layers is oriented in opposite directions by means of preadjusted unidirectional anisotropy, and the magnetoresistive elements are interconnected with one another in such a manner that, as a result of the action of the first and second magnetic fields on the magnetoresistive elements, the switching behavior of all basic logic functions, especially the AND, OR, NAND, NOR, XOR or XNOR functions, can be induced on the basis of the resulting changes in the orientation of the magnetization of the free layers, and thus of the resistance of the magnetoresistive elements in the logic-circuit array.
摘要翻译：本发明涉及一种可重新配置的磁逻辑电路阵列，其具有至少两个磁阻元件，每个磁阻元件由至少两个磁性层组成，每个磁层通过中间层彼此分开，其中一个磁层作为参考层在外部磁场的影响下基本上不改变其磁化，另一个作为自由层的磁性层在外部磁场的影响下可感知地改变其磁化，并且具有用于信号端口的至少一个导体，当电流流过时，可以产生第一磁场，其可以翻转自由层的磁化，并且具有也影响磁阻元件的用于按需生成第二可变磁场的装置。为此，两个这样的磁阻元件彼此相邻设置，由此通过预调整的单向各向异性将两个参考层的磁化方向定向在相反的方向上，并且磁阻元件彼此互连，作为第一和第二磁场对磁阻元件的作用的结果，所有基本逻辑功能，特别是AND，OR，NAND，NOR，XOR或XNOR函数的转换行为可以基于导致自由层的磁化方向的变化，从而导致逻辑电路阵列中的磁阻元件的电阻的变化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式