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    • 5. 发明授权
    • Method and exposure apparatus for performing a tilted focus and a device manufactured accordingly
    • 用于进行倾斜聚焦的方法和曝光装置以及由此制造的装置
    • US07502097B2
    • 2009-03-10
    • US11270826
    • 2005-11-10
    • Jan Hauschild
    • Jan Hauschild
    • G03B27/52G03B27/42G03B27/32
    • G02B27/0075G03F7/70108G03F7/70125G03F7/70191G03F7/70641G03F9/7026
    • The invention is directed to a method for performing a tilted focus test that includes providing a target object, providing a projection beam of radiation using a radiation source, providing at least one reflective device to produce a projected projection beam of radiation onto the target portion, and producing a first projected projection beam of radiation onto the target object using the at least one reflective device in a first orientation. The invention further includes using a tilting device for tilting the at least one reflective device to a second orientation to provide a second projection beam with a tilt relative to said first projection beam, producing a second projected projection beam of radiation onto the target object, determining a lateral shift of the first and second projected projection beams on the target object, and determining from said lateral shift a defocus of the target object with respect to the projected projection beam.
    • 本发明涉及一种用于执行倾斜聚焦测试的方法,该方法包括提供目标物体,使用辐射源提供辐射投影光束,提供至少一个反射装置以产生投影的投影投射射束到目标部分上, 以及使用所述至少一个反射装置在第一取向上产生第一投射的投影投射射束到所述目标物体上。 本发明还包括使用倾斜装置来将至少一个反射装置倾斜到第二取向以提供具有相对于所述第一投影光束的倾斜的第二投影光束,从而产生第二投影的投射投射射束到目标物体上,确定 第一和第二投影投影光束在目标物体上的横向偏移,并且从所述横向偏移确定目标物体相对于投影投影光束的散焦。
    • 8. 发明授权
    • Lithographic apparatus and device manufacturing method
    • 平版印刷设备和器件制造方法
    • US07298455B2
    • 2007-11-20
    • US11154950
    • 2005-06-17
    • Arnold SinkeJan Hauschild
    • Arnold SinkeJan Hauschild
    • G03B27/52G03B27/72
    • G03F7/70641G03F7/70066
    • The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.
    • 本发明提供一种光刻设备,包括:基板台,其构造成保持基板; 投影系统,被配置为将辐射束通过曝光狭缝区域突出到所述基板的目标部分上; 图案形成装置,其构造成以其横截面中的图案导入辐射束,以形成图案化的辐射束,所述衬底的目标部分处的图案化辐射束在聚焦深度上聚焦; 以及测量系统,其布置成测量所述目标部分的至少一部分的表面形貌,其中所述投影系统被布置成调整所述曝光狭缝区域的尺寸,以形成调整的曝光狭缝区域,在所述曝光狭缝区域上,表面形貌变化相等 达到或小于焦深。
    • 9. 发明申请
    • Lithographic apparatus focus test method and system, and device manufacturing method
    • 光刻设备聚焦测试方法和系统,以及器件制造方法
    • US20060132744A1
    • 2006-06-22
    • US11017230
    • 2004-12-21
    • Jan HauschildMarco PietersCoen Van De Vin
    • Jan HauschildMarco PietersCoen Van De Vin
    • G03B27/52
    • G03F7/70641
    • A method and system for performing a focus test in a lithographic apparatus. According to the method, a substrate is provided with a layer of radiation sensitive material, the substrate is illuminated in the lithographic apparatus using a first focus sensitive feature and a second focus feature, and the substrate is analyzed to provide results of the focus test using the first focus sensitive feature as imaged on the substrate. The focus test is performed on a regular production wafer, and the results of the focus test are allowed if predetermined statistic properties associated with the second focus feature as imaged on the substrate are within predetermined limits. The second focus feature may be focus sensitive or focus insensitive.
    • 一种用于在光刻设备中执行聚焦测试的方法和系统。 根据该方法,衬底设置有一层辐射敏感材料,使用第一焦点敏感特征和第二焦点特征在光刻设备中照射衬底,并且分析衬底以提供聚焦测试的结果,使用 第一个焦点敏感特征成像在基底上。 如果在基板上成像的与第二焦点特征相关联的预定统计特性在预定限度内,则可以在常规生产晶片上执行聚焦测试,并且允许聚焦测试的结果。 第二个焦点特征可能是焦点敏感或焦点不敏感。