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1. 发明申请

US20220111468A1 METHODS TO FABRICATE CHAMBER COMPONENT USING LASER DRILLING 有权
公开(公告)号：US20220111468A1
公开(公告)日：2022-04-14
申请号：US17090770
申请日：2020-11-05
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Timothy Joseph FRANKLIN
IPC分类号： B23K26/388 , H01L21/306 , H01L21/67
摘要： Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

2. 发明申请

US20220380898A1 GAS DISTRIBUTION PLATE WITH HIGH ASPECT RATIO HOLES AND A HIGH HOLE DENSITY 有权
公开(公告)号：US20220380898A1
公开(公告)日：2022-12-01
申请号：US17745156
申请日：2022-05-16
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Sanjeev BALUJA , Chad PETERSON , Michael R. RICE
IPC分类号： C23C16/455 , B23K1/00
摘要： A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

3. 发明申请

US20220111467A1 METHODS TO FABRICATE CHAMBER COMPONENT USING LASER DRILLING 有权
公开(公告)号：US20220111467A1
公开(公告)日：2022-04-14
申请号：US17392248
申请日：2021-08-02
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Timothy Joseph FRANKLIN , Joseph F. SOMMERS
IPC分类号： B23K26/382
摘要： Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

4. 发明申请

US20200308703A1 GAS DISTRIBUTION PLATE WITH HIGH ASPECT RATIO HOLES AND A HIGH HOLE DENSITY 审中-公开
公开(公告)号：US20200308703A1
公开(公告)日：2020-10-01
申请号：US16802293
申请日：2020-02-26
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Sanjeev BALUJA , Chad PETERSON , Michael R. RICE
IPC分类号： C23C16/455 , B23K1/00
摘要： A gas distribution plate for a showerhead assembly of a processing chamber may include at least a first plate and second plate. The first plate may include a first plurality holes each having a diameter of at least about 100 um. The second plate may include a second plurality of holes each having a diameter of at least about 100 um. Further, each of the first plurality of holes is aligned with a respective one of the second plurality of holes forming a plurality of interconnected holes. Each of the interconnected holes is isolated from each other interconnected holes.

5. 发明申请

US20200283900A1 POROUS SHOWERHEAD FOR A PROCESSING CHAMBER 审中-公开
公开(公告)号：US20200283900A1
公开(公告)日：2020-09-10
申请号：US16808046
申请日：2020-03-03
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Chad PETERSON , Marc SHULL
IPC分类号： C23C16/455
摘要： A showerhead assembly includes a support structure and a porous plate. The support structure includes a support feature. The porous plate has a thermal conductivity of at least about 50 W/(mK) and includes a plurality of pores having an average diameter of less than about 100 um, wherein at least a portion of a perimeter of the porous plate rests on the support feature. The showerhead may be included within a processing chamber that is utilized to process a substrate.

6. 发明申请

US20160079088A1 METHOD FOR ETCHING A HARDMASK LAYER FOR AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPLICATIONS 审中-公开
标题翻译：用于蚀刻用于半导体应用的互连结构的HARDMASK层的方法
公开(公告)号：US20160079088A1
公开(公告)日：2016-03-17
申请号：US14485346
申请日：2014-09-12
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Chiu-pien KUO , Shawn HSIEH , Cary HUNG
IPC分类号： H01L21/3213
CPC分类号： H01L21/32138 , H01L21/02071 , H01L21/32136 , H01L21/32139
摘要： Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.
摘要翻译：本公开的实施例提供了用于图案化设置在诸如铜层的金属层上的硬掩模层的方法，以在半导体器件中形成互连结构。在一个实施例中，在设置在基板上的金属层上图案化硬掩模层的方法包括将包含含碳氟气体和含氯气体的第一蚀刻气体混合物供应到处理室中以蚀刻硬掩模层的一部分设置在形成在基板上的金属层上，将包含烃气体的第二蚀刻气体混合物供应到处理室中以清洁基板，以及提供包含含碳氟气体的第三蚀刻气体混合物以除去其余部分硬掩模层直到金属层的表面露出。

7. 发明申请

US20160079077A1 METHODS FOR ETCHING A HARDMASK LAYER FOR AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPLICATIONS 有权
标题翻译：用于蚀刻用于半导体应用的互连结构的HARDMASK层的方法
公开(公告)号：US20160079077A1
公开(公告)日：2016-03-17
申请号：US14495728
申请日：2014-09-24
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Chiu-pien KUO , Shang-Ting HSIEH , Guochuan HONG
IPC分类号： H01L21/308 , H01L23/532 , H01L21/3213
CPC分类号： H01L21/32139 , H01L21/32136 , H01L21/32138 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the present disclosure provide methods for patterning a hardmask layer disposed on a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a hardmask layer on a metal layer disposed on a substrate includes supplying a first etching gas mixture comprising a carbon-fluorine containing gas and a chlorine containing gas into a processing chamber to etch a portion of a hardmask layer disposed on a metal layer formed on a substrate, supplying a second etching gas mixture comprising a hydrocarbon gas into the processing chamber to clean the substrate, and supplying a third etching gas mixture comprising a carbon-fluorine containing gas to remove a remaining portion of the hardmask layer until a surface of the metal layer is exposed.
摘要翻译：本公开的实施例提供了用于图案化设置在诸如铜层的金属层上的硬掩模层的方法，以在半导体器件中形成互连结构。在一个实施例中，在设置在基板上的金属层上图案化硬掩模层的方法包括将包含含碳氟气体和含氯气体的第一蚀刻气体混合物供应到处理室中以蚀刻硬掩模层的一部分设置在形成在基板上的金属层上，将包含烃气体的第二蚀刻气体混合物供应到处理室中以清洁基板，以及提供包含含碳氟气体的第三蚀刻气体混合物以除去其余部分硬掩模层直到金属层的表面露出。

8. 发明申请

US20150287634A1 METHODS FOR ETCHING A METAL LAYER TO FORM AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPILCATIONS 有权
标题翻译：用于蚀刻金属层以形成用于半导体器件的互连结构的方法
公开(公告)号：US20150287634A1
公开(公告)日：2015-10-08
申请号：US14243677
申请日：2014-04-02
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Ann CHIEN , Chiu-Pien KUO , Mark HOINKIS , Bradley J. HOWARD
IPC分类号： H01L21/768 , H01L21/02 , H01L21/3213
CPC分类号： H01L21/32136 , H01J37/321 , H01J2237/334 , H01L21/32139 , H01L21/7682 , H01L21/76885
摘要： Embodiments of the present invention provide methods for patterning a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of patterning a metal layer on a substrate includes (a) supplying an etching gas mixture comprising a hydro-carbon gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, (b) exposing the metal layer to an ashing gas mixture comprising a hydrogen containing gas to the substrate, and (c) repeatedly performing steps (a) and (b) until desired features are formed in the metal layer. During the patterning process, the substrate temperature may be controlled at greater than 50 degrees Celsius.
摘要翻译：本发明的实施例提供了用于图案化诸如铜层的金属层以在半导体器件中形成互连结构的方法。在一个实施例中，在衬底上图案化金属层的方法包括（a）将包含氢碳气体的蚀刻气体混合物供应到其中设置有衬底的处理室中，所述衬底具有设置在其上的金属层，（b ）将金属层暴露于含有含氢气体的灰化气体混合物到基板上，（c）反复进行步骤（a）和（b），直到在金属层中形成所需的特征。在图案化过程中，衬底温度可以被控制在大于50摄氏度。

9. 发明申请

US20200291522A1 LID ASSEMBLY APPARATUS AND METHODS FOR SUBSTRATE PROCESSING CHAMBERS 审中-公开
公开(公告)号：US20200291522A1
公开(公告)日：2020-09-17
申请号：US16802284
申请日：2020-02-26
申请人： Applied Materials, Inc.
发明人： Hanish Kumar PANAVALAPPIL KUMARANKUTTY , Prashant A. DESAI , Diwakar N. KEDLAYA , Sumit AGARWAL , Vidyadharan Srinivasa Murthy BANGALORE , Truong NGUYEN , Zubin HUANG
IPC分类号： C23C16/455
摘要： The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

10. 发明申请

US20160099173A1 METHODS FOR ETCHING A BARRIER LAYER FOR AN INTERCONNECTION STRUCTURE FOR SEMICONDUCTOR APPLICATIONS 审中-公开
标题翻译：用于蚀刻用于半导体应用的互连结构的障壁层的方法
公开(公告)号：US20160099173A1
公开(公告)日：2016-04-07
申请号：US14505584
申请日：2014-10-03
申请人： Applied Materials, Inc.
发明人： Sumit AGARWAL , Chiu-pien KUO , Bradley J. HOWARD
IPC分类号： H01L21/768 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/76865 , H01J37/321 , H01J37/32449 , H01L21/02071 , H01L21/32136 , H01L21/32139 , H01L21/76885
摘要： Embodiments of the present disclosure provide methods for etching a barrier layer disposed under a metal layer, such as a copper layer, when the metal layer is etched open exposing the barrier layer, to form an interconnection structure in semiconductor devices. In one embodiment, a method of etching a barrier layer disposed under a metal layer formed on a substrate includes supplying a first etching gas mixture comprising a hydrogen containing gas and an inert gas into a processing chamber to clean a surface of a barrier layer disposed on a substrate for a first period of time, supplying a second etching gas mixture comprising fluorine containing gas into the processing chamber to etch the barrier layer, and switching to supply the first etching gas in the processing chamber to clean the etched barrier layer for a second period of time.
摘要翻译：本公开的实施例提供了当金属层被蚀刻开放暴露阻挡层时，蚀刻设置在诸如铜层之类的金属层下方的阻挡层的方法，以在半导体器件中形成互连结构。在一个实施例中，蚀刻设置在形成在基板上的金属层下方的阻挡层的方法包括将包含含氢气体和惰性气体的第一蚀刻气体混合物供应到处理室中以清洁设置在其上的阻挡层的表面在第一时间段内的衬底，将包含含氟气体的第二蚀刻气体混合物供应到处理室中以蚀刻阻挡层，并且切换以提供处理室中的第一蚀刻气体以将蚀刻的阻挡层清洁第二一段的时间。

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