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1. 发明授权

US08895449B1 Delicate dry clean 有权
标题翻译：细干干净
公开(公告)号：US08895449B1
公开(公告)日：2014-11-25
申请号：US13966453
申请日：2013-08-14
申请人： Applied Materials, Inc.
发明人： Lina Zhu , Sean S. Kang , Srinivas D. Nemani , Chia-Ling Kao
IPC分类号： H01L21/302 , H01L21/461 , H01L21/3105 , H01L21/311
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/31116
摘要： A method of selectively removing fluorocarbon layers from overlying low-k dielectric material is described. These protective plasma treatments (PPT) are delicate alternatives to traditional post-etch treatments (PET). The method includes sequential exposure to (1) a local plasma formed from a silicon-fluorine precursor followed by (2) an exposure to plasma effluents formed in a remote plasma from a fluorine-containing precursor. The remote plasma etch (2) has been found to be highly selective of the residual material following the local plasma silicon-fluorine exposure. The sequential process (1)-(2) avoids exposing the low-k dielectric material to oxygen which would undesirably increase its dielectric constant.
摘要翻译：描述了从覆盖低k电介质材料中选择性除去碳氟化合物层的方法。这些保护等离子体处理（PPT）是传统的蚀刻后处理（PET）的精巧替代品。该方法包括连续暴露于（1）由硅 - 氟前体形成的局部等离子体，随后（2）暴露于在含氟前体的远程等离子体中形成的等离子体流出物。已经发现远程等离子体蚀刻（2）对于局部等离子体硅 - 氟暴露后的残余材料是高度选择性的。顺序方法（1） - （2）避免了将低k电介质材料暴露于氧气，这将不利地增加其介电常数。

2. 发明申请

US20150287612A1 SPACER FORMATION 有权
标题翻译：间隙形成
公开(公告)号：US20150287612A1
公开(公告)日：2015-10-08
申请号：US14247035
申请日：2014-04-07
申请人： Applied Materials, Inc.
发明人： Olivier Luere , Sean S. Kang , Srinivas D. Nemani
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0274 , H01L21/0337 , H01L21/3086 , H01L21/31116 , H01L21/31122 , H01L21/32139
摘要： Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.
摘要翻译：本发明的实施例涉及形成更多对称间隔物的方法，其可用于自对准多图案化工艺。在使用高分辨率光掩模的光刻系统的光学分辨率附近形成的心轴上形成间隔物材料的保形间隔层。在保形间隔层上进一步形成含碳层。各向异性蚀刻含碳层以暴露保形间隔层的高点，同时保留碳侧面板。然后可以蚀刻保形间隔层以形成间隔物，而不会使轮廓朝向一侧或另一侧的传统倾斜。

3. 发明授权

US08992792B2 Method of fabricating an ultra low-k dielectric self-aligned via 有权
标题翻译：制造超低k电介质自对准通孔的方法
公开(公告)号：US08992792B2
公开(公告)日：2015-03-31
申请号：US13724698
申请日：2012-12-21
申请人： Applied Materials, Inc.
发明人： Chih-Yang Chang , Sean S. Kang , Chia-Ling Kao , Nikolaos Bekiaris
IPC分类号： C03C15/00 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/768
CPC分类号： H01L21/3065 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76814
摘要： Methods of fabricating ultra low-k dielectric self-aligned vias are described. In an example, a method of forming a self-aligned via (SAV) in a low-k dielectric film includes forming a trench pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate. A via pattern is formed in a masking layer formed above the metal nitride hardmask layer. The via pattern is etched at least partially into the low-k dielectric film, the etching comprising using a plasma etch using a chemistry based on CF4, H2, and a diluent inert gas composition.
摘要翻译：描述了制造超低k电介质自对准通孔的方法。在一个示例中，在低k电介质膜中形成自对准通孔（SAV）的方法包括在形成在衬底上方的低k电介质膜上形成的金属氮化物硬掩模层中形成沟槽图案。在形成在金属氮化物硬掩模层之上的掩模层中形成通孔图案。通孔图案至少部分地被蚀刻到低k电介质膜中，蚀刻包括使用基于CF4，H2和稀释惰性气体组成的化学物质进行等离子体蚀刻。

4. 发明授权

US08748322B1 Silicon oxide recess etch 有权
标题翻译：氧化硅凹槽蚀刻
公开(公告)号：US08748322B1
公开(公告)日：2014-06-10
申请号：US13942950
申请日：2013-07-16
申请人： Applied Materials, Inc.
发明人： Nancy Fung , David T. Or , Qingjun Zhou , Lina Zhu , Jeremiah T. Pender , Srinivas D. Nemani , Sean S. Kang , Sergey G. Belostotskiy , Chinh Dinh
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32357 , H01L21/67028 , H01L21/76229
摘要： A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates across a varying pattern on a patterned substrate. The method also provides a more rectilinear profile following the etch process. Methods include a sequential exposure of gapfill silicon oxide. The gapfill silicon oxide is exposed to a local plasma treatment prior to a remote-plasma dry etch which may produce salt by-product on the surface. The local plasma treatment has been found to condition the gapfill silicon oxide such that the etch process proceeds at a more even rate within each trench and across multiple trenches. The salt by-product may be removed by raising the temperature in a subsequent sublimation step.
摘要翻译：描述了从沟槽中蚀刻二氧化硅的方法，其允许跨越图案化衬底上的变化图案的更均匀的蚀刻速率。该方法还提供了在蚀刻工艺之后的更直线的轮廓。方法包括间隙填充氧化硅的顺序曝光。在远程等离子体干蚀刻之前，将间隙填充氧化硅暴露于局部等离子体处理，其可以在表面上产生副产物盐。已经发现局部等离子体处理可以调节填隙氧化硅的间隙，使得蚀刻过程在每个沟槽内并跨越多个沟槽以更均匀的速率进行。可以通过在随后的升华步骤中升高温度来除去盐副产物。

5. 发明申请

US20220344282A1 STRESS AND OVERLAY MANAGEMENT FOR SEMICONDUCTOR PROCESSING 有权
公开(公告)号：US20220344282A1
公开(公告)日：2022-10-27
申请号：US17730527
申请日：2022-04-27
申请人： Applied Materials, Inc.
发明人： Pradeep K. Subrahmanyan , Sean S. Kang , Sony Varghese
IPC分类号： H01L23/00 , G03F7/20 , H01L21/66
摘要： Provided are methods of reducing the stress of a semiconductor wafer. A wafer map of a free-standing wafer is created using metrology tools. The wafer map is then converted into a power spectral density (PSD) using a spatial frequency scale. The fundamental component of bow is then compensated with a uniform film, e.g., silicon nitride (SiN), deposited on the back side of the wafer.

6. 发明授权

US10269571B2 Methods for fabricating nanowire for semiconductor applications 有权
公开(公告)号：US10269571B2
公开(公告)日：2019-04-23
申请号：US15648163
申请日：2017-07-12
申请人： Applied Materials, Inc.
发明人： Keith Tatseun Wong , Shiyu Sun , Sean S. Kang , Nam Sung Kim , Srinivas D. Nemani , Ellie Y. Yieh
IPC分类号： H01L29/423 , H01L29/06 , H01L21/02 , H01L21/28 , H01L21/321 , H01L29/66
摘要： The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

7. 发明授权

US09543163B2 Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process 有权
标题翻译：利用主蚀刻和循环蚀刻工艺的组合在材料层中形成特征的方法
公开(公告)号：US09543163B2
公开(公告)日：2017-01-10
申请号：US14059416
申请日：2013-10-21
申请人： Applied Materials, Inc.
发明人： Mang-Mang Ling , Jungmin Ko , Sean S. Kang , Jeremiah T. Pender , Srinivas D. Nemani , Bradley Howard
IPC分类号： H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01J2237/334 , H01L21/76802
摘要： Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.
摘要翻译：提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

8. 发明授权

US09269590B2 Spacer formation 有权
标题翻译：间隔物形成
公开(公告)号：US09269590B2
公开(公告)日：2016-02-23
申请号：US14247035
申请日：2014-04-07
申请人： Applied Materials, Inc.
发明人： Olivier Luere , Sean S. Kang , Srinivas D. Nemani
IPC分类号： H01L21/00 , H01L21/311 , H01L21/027 , H01L21/308
CPC分类号： H01L21/31144 , H01L21/0274 , H01L21/0337 , H01L21/3086 , H01L21/31116 , H01L21/31122 , H01L21/32139
摘要： Embodiments of the present invention pertain to methods of forming more symmetric spacers which may be used for self-aligned multi-patterning processes. A conformal spacer layer of spacer material is formed over mandrels patterned near the optical resolution of a photolithography system using a high-resolution photomask. A carbon-containing layer is further formed over the conformal spacer layer. The carbon-containing layer is anisotropically etched to expose the high points of the conformal spacer layer while retaining carbon side panels. The conformal spacer layer may then be etched to form spacers without the traditional skewing of the profile towards one side or the other.
摘要翻译：本发明的实施例涉及形成更多对称间隔物的方法，其可用于自对准多图案化工艺。在使用高分辨率光掩模的光刻系统的光学分辨率附近形成的心轴上形成间隔物材料的保形间隔层。在保形间隔层上进一步形成含碳层。各向异性蚀刻含碳层以暴露保形间隔层的高点，同时保留碳侧面板。然后可以蚀刻保形间隔层以形成间隔物，而不会使轮廓朝向一侧或另一侧的传统倾斜。

9. 发明申请

US20150200042A1 RECESSING ULTRA-LOW K DIELECTRIC USING REMOTE PLASMA SOURCE 审中-公开
标题翻译：使用远程等离子体源记录超低K电介质
公开(公告)号：US20150200042A1
公开(公告)日：2015-07-16
申请号：US14152978
申请日：2014-01-10
申请人： Applied Materials, Inc.
发明人： Mang Mang Ling , Sean S. Kang , Jeremiah T P Pender , Srinivas D. Nemani , Bradley J. Howard
IPC分类号： H01B19/04 , H01J37/32
CPC分类号： H01B19/04 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J2237/334
摘要： A portion of the ultra-low k dielectric layer over a substrate is modified using a downstream plasma comprising a first chemistry. The modified portion of the ultra-low k dielectric layer is etched using the downstream plasma comprising a second chemistry. The downstream plasma is generated using a remote plasma source.
摘要翻译：使用包含第一化学物质的下游等离子体改变衬底上的超低k电介质层的一部分。使用包括第二化学物质的下游等离子体蚀刻超低k电介质层的改性部分。使用远程等离子体源产生下游等离子体。

10. 发明申请

US20200312680A1 MULTIZONE FLOW DISTRIBUTION SYSTEM 审中-公开
公开(公告)号：US20200312680A1
公开(公告)日：2020-10-01
申请号：US16370783
申请日：2019-03-29
申请人： Applied Materials Inc.
发明人： DAISUKE SHIMIZU , Taiki Hatakeyama , Sean S. Kang , Chunlei Zhang , Sergio F. Shoji
IPC分类号： H01L21/67 , F16K11/048 , F16K37/00
摘要： Methods and apparatus for controlling fluid distribution to multiple fluid delivery zones in an etch chamber is provided herein. In some embodiments, the apparatus includes a first flow ratio controller and a second flow ratio controller, each having a respective inlet, a first outlet coupled to a first fluid delivery zone in a process chamber, and a second outlet coupled to a second fluid delivery zone in the process chamber, wherein the first flow ratio controller and the second flow ratio controller are configured to provide a flow ratio of a first process fluid and a second process fluid, respectively, between the first outlet and the second outlet, and a third flow ratio controller configured to provide a flow rate of a third process fluid to at least one of the first fluid delivery zone, the second fluid delivery zone, or a third fluid delivery zone.

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