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1. 发明授权

US09213340B2 Selection of polishing parameters to generate removal or pressure profile 有权
标题翻译：选择抛光参数以产生去除或压力分布
公开(公告)号：US09213340B2
公开(公告)日：2015-12-15
申请号：US14293776
申请日：2014-06-02
申请人： Applied Materials, Inc.
发明人： Huanbo Zhang , Garrett Ho Yee Sin , King Yi Heung , Nathan Bohannon , Qing Zhang
IPC分类号： G05D16/20 , B24B37/005 , B24B37/04
CPC分类号： B24B37/005 , B24B37/042 , G05B19/182 , G05B2219/45232 , G05D16/20
摘要： Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.
摘要翻译：为化学机械抛光系统的多个可控参数选择值，其包括具有多个区域的载体头，以在基底上施加独立的可控压力。存储数据存储在基板的前表面上的去除轮廓的变化，以改变可控参数，包括在基板的前表面上的多个位置处的去除的数据，存在比腔更多的位置数量。为多个可控参数的每个参数确定一个值，以最小化目标去除曲线与根据数据相关的预期去除曲线之间的差异，该数据与基板的前表面上的去除曲线的变化相关，参数的变化。存储多个可控参数的每个参数的值。

2. 发明申请

US20140277670A1 Selection of Polishing Parameters to Generate Removal or Pressure Profile 有权
标题翻译：选择抛光参数以生成去除或压力曲线
公开(公告)号：US20140277670A1
公开(公告)日：2014-09-18
申请号：US14293776
申请日：2014-06-02
申请人： Applied Materials, Inc.
发明人： Huanbo Zhang , Garrett Ho Yee Sin , King Yi Heung , Nathan Bohannon , Qing Zhang
IPC分类号： G05D16/20
CPC分类号： B24B37/005 , B24B37/042 , G05B19/182 , G05B2219/45232 , G05D16/20
摘要： Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.
摘要翻译：为化学机械抛光系统的多个可控参数选择值，其包括具有多个区域的载体头，以在基底上施加独立的可控压力。存储数据存储在基板的前表面上的去除轮廓的变化，以改变可控参数，包括在基板的前表面上的多个位置处的去除的数据，存在比腔更多的位置数量。为多个可控参数的每个参数确定一个值，以最小化目标去除曲线与根据数据相关的预期去除曲线之间的差异，该数据与基板的前表面上的去除曲线的变化相关，参数的变化。存储多个可控参数的每个参数的值。

3. 发明授权

US11241769B2 Methods and apparatus for profile and surface preparation of retaining rings utilized in chemical mechanical polishing processes 有权
公开(公告)号：US11241769B2
公开(公告)日：2022-02-08
申请号：US16210859
申请日：2018-12-05
申请人： Applied Materials, Inc.
发明人： David Masayuki Ishikawa , Jeonghoon Oh , Garrett Ho Yee Sin , Charles C. Garretson , Huanbo Zhang , Chia-Ling Pai , Niraj Prasad , Julio David Muzquiz
IPC分类号： B24B37/32 , B24B37/10 , B24B57/02
摘要： A retaining ring for a polishing process is disclosed. The retaining ring includes a body comprising an upper portion and a lower portion, and a sacrificial surface disposed on the lower portion, the sacrificial surface comprising a negative tapered surface having a taper height that is about 0.0003 inches to about 0.00015 inches.

4. 发明授权

US10610994B2 Polishing system with local area rate control and oscillation mode 有权
公开(公告)号：US10610994B2
公开(公告)日：2020-04-07
申请号：US15456413
申请日：2017-03-10
申请人： Applied Materials, Inc.
发明人： Eric Lau , Hui Chen , King Yi Heung , Chih Chung Chou , Edwin C. Suarez , Garrett Ho Yee Sin , Charles C. Garretson , Jeonghoon Oh
IPC分类号： B24B37/10 , H01L21/687 , H01L21/67 , B24B37/20 , B24B57/02
CPC分类号： B24B37/10 , B24B37/20 , B24B57/02 , H01L21/67092 , H01L21/68785
摘要： A polishing module includes a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

5. 发明授权

US10434623B2 Local area polishing system and polishing pad assemblies for a polishing system 有权
公开(公告)号：US10434623B2
公开(公告)日：2019-10-08
申请号：US15456320
申请日：2017-03-10
申请人： Applied Materials, Inc.
发明人： Eric Lau , Hui Chen , King Yi Heung , Wei-Cheng Lee , Chih Chung Chou , Edwin C. Suarez , Garrett Ho Yee Sin , Charles C. Garretson , Jeonghoon Oh
IPC分类号： B24B37/26 , B24B37/30
摘要： A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

6. 发明授权

US10252397B2 Methods and apparatus for profile and surface preparation of retaining rings utilized in chemical mechanical polishing processes 有权
公开(公告)号：US10252397B2
公开(公告)日：2019-04-09
申请号：US14879526
申请日：2015-10-09
申请人： Applied Materials, Inc.
发明人： David Masayuki Ishikawa , Jeonghoon Oh , Garrett Ho Yee Sin , Charles C. Garretson , Huanbo Zhang , Chia-Ling Pai , Niraj Prasad , Julio David Muzquiz
IPC分类号： B24B37/32
摘要： A retaining ring for a polishing process is disclosed. The retaining ring includes a body comprising an upper portion and a lower portion, and a sacrificial surface disposed on the lower portion, the sacrificial surface comprising a negative tapered surface having a taper height that is about 0.0003 inches to about 0.00015 inches.

7. 发明授权

US10493590B2 Selection of polishing parameters to generate removal or pressure profile 有权
公开(公告)号：US10493590B2
公开(公告)日：2019-12-03
申请号：US14968546
申请日：2015-12-14
申请人： Applied Materials, Inc.
发明人： Huanbo Zhang , Garrett Ho Yee Sin , King Yi Heung , Nathan Bohannon , Qing Zhang
IPC分类号： B24B37/005 , B24B37/04 , G05D16/20 , G05B19/18
CPC分类号： B24B37/005 , B24B37/042 , G05B19/182 , G05D16/20 , G05B2219/45232
摘要： Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.

8. 发明授权

US09873179B2 Carrier for small pad for chemical mechanical polishing 有权
公开(公告)号：US09873179B2
公开(公告)日：2018-01-23
申请号：US15002193
申请日：2016-01-20
申请人： Applied Materials, Inc.
发明人： Hui Chen , Steven M. Zuniga , Hung Chih Chen , Eric Lau , Garrett Ho Yee Sin , Shou-Sung Chang
IPC分类号： B24B37/20 , B24B37/30
CPC分类号： B24B37/20 , B24B37/105 , B24B37/22 , B24B37/26 , B24B37/30
摘要： A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad assembly is positioned in the casing such that the membrane divides the cavity into a first chamber and a second chamber and the aperture extends from the second chamber. The polishing pad carrier and polishing pad assembly are positioned and configured such that at least during application of a sufficient pressure to the first chamber the polishing pad portion projects through the aperture.

9. 发明申请

US20170203405A1 CARRIER FOR SMALL PAD FOR CHEMICAL MECHANICAL POLISHING 有权
公开(公告)号：US20170203405A1
公开(公告)日：2017-07-20
申请号：US15002193
申请日：2016-01-20
申请人： Applied Materials, Inc.
发明人： Hui Chen , Steven M. Zuniga , Hung Chih Chen , Eric Lau , Garrett Ho Yee Sin , Shou-Sung Chang
IPC分类号： B24B37/20 , B24B37/30
CPC分类号： B24B37/20 , B24B37/105 , B24B37/22 , B24B37/26 , B24B37/30
摘要： A chemical mechanical polishing system includes a substrate support configured to hold a substrate during a polishing operation, a polishing pad assembly include a membrane and a polishing pad portion, a polishing pad carrier, and a drive system configured to cause relative motion between the substrate support and the polishing pad carrier. The polishing pad carrier includes a casing having a cavity and an aperture connecting the cavity to an exterior of the casing. The polishing pad assembly is positioned in the casing such that the membrane divides the cavity into a first chamber and a second chamber and the aperture extends from the second chamber. The polishing pad carrier and polishing pad assembly are positioned and configured such that at least during application of a sufficient pressure to the first chamber the polishing pad portion projects through the aperture.

10. 发明申请

US20160096251A1 Selection of Polishing Parameters to Generate Removal or Pressure Profile 审中-公开
标题翻译：选择抛光参数以生成去除或压力曲线
公开(公告)号：US20160096251A1
公开(公告)日：2016-04-07
申请号：US14968546
申请日：2015-12-14
申请人： Applied Materials, Inc.
发明人： Huanbo Zhang , Garrett Ho Yee Sin , King Yi Heung , Nathan Bohannon , Qing Zhang
IPC分类号： B24B37/005 , G05B19/18 , B24B37/04
CPC分类号： B24B37/005 , B24B37/042 , G05B19/182 , G05B2219/45232 , G05D16/20
摘要： Values are selected for a plurality of controllable parameters of a chemical mechanical polishing system that includes a carrier head with a plurality of zones to apply independently controllable pressures on a substrate. Data is stored relating variation in removal profile on a front surface of the substrate to variation in the controllable parameters, the data including removal at a plurality of positions on the front surface of the substrate, there being a greater number of positions than chambers. A value is determined for each parameter of the plurality of controllable parameters to minimize a difference between a target removal profile and an expected removal profile calculated from the data relating variation in removal profile on a front surface of the substrate to variation in the parameters. The value for each parameter of the plurality of controllable parameters is stored.
摘要翻译：为化学机械抛光系统的多个可控参数选择值，其包括具有多个区域的载体头，以在基底上施加独立的可控压力。存储数据存储在基板的前表面上的去除轮廓的变化，以改变可控参数，包括在基板的前表面上的多个位置处的去除的数据，存在比腔更多的位置数量。为多个可控参数的每个参数确定一个值，以最小化目标去除曲线与根据数据相关的预期去除曲线之间的差异，该数据与基板的前表面上的去除曲线的变化相关，参数的变化。存储多个可控参数的每个参数的值。

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