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1. 发明申请

US20220413452A1 REDUCING SUBSTRATE SURFACE SCRATCHING USING MACHINE LEARNING 有权
公开(公告)号：US20220413452A1
公开(公告)日：2022-12-29
申请号：US17360652
申请日：2021-06-28
申请人： APPLIED MATERIALS, INC.
发明人： Kartik B. Shah , Satish Radhakrishnan , Karthik Ramanathan , Karthikeyan Balaraman , Adolph Miller Allen , Xinyuan Chong , Mitrabhanu Sahu , Wenjing Xu , Michael Sterling Jackson , Weize Hu , Feng Chen
IPC分类号： G05B13/02 , G05B13/04
摘要： Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

2. 发明授权

US11049701B2 Biased cover ring for a substrate processing system 有权
公开(公告)号：US11049701B2
公开(公告)日：2021-06-29
申请号：US15823176
申请日：2017-11-27
申请人： APPLIED MATERIALS, INC.
发明人： Adolph Miller Allen , William Johanson , Viachslav Babayan , Zhong Qiang Hua , Carl R. Johnson , Vanessa Faune , Jingjing Liu , Vaibhav Soni , Kirankumar Savandaiah , Sundarapandian Ramalinga Vijayalaks Reddy
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34 , C23C16/458 , H01J37/02
摘要： Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.

3. 发明授权

US10242873B2 RF power compensation to control film stress, density, resistivity, and/or uniformity through target life 有权
公开(公告)号：US10242873B2
公开(公告)日：2019-03-26
申请号：US14640881
申请日：2015-03-06
申请人： APPLIED MATERIALS, INC.
发明人： Adolph Miller Allen , Zhenbin Ge
IPC分类号： C23C14/35 , H01L21/033 , C23C14/06 , H01L21/285 , H01L21/311
摘要： Methods for depositing a metal-containing layer atop a substrate disposed in a PVD chamber are provided herein. In some embodiments, such a method includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and increasing the first amount of RF power provided to the target assembly by a predetermined amount while sputtering the source material, wherein the predetermined amount is determined by a second amount of RF power provided to the target assembly to maintain a desired ionization rate of source material at a second erosion state.

4. 发明授权

US09611539B2 Crystalline orientation and overhang control in collision based RF plasmas 有权
公开(公告)号：US09611539B2
公开(公告)日：2017-04-04
申请号：US13749791
申请日：2013-01-25
申请人： APPLIED MATERIALS, INC.
发明人： Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
IPC分类号： C23C14/35 , C23C14/34 , C23C14/04 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C14/046 , C23C14/345 , C23C14/3492 , C23C14/351 , H01J37/32706 , H01J37/3299 , H01J37/3405
摘要： Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.

5. 发明授权

US11037768B2 Methods and apparatus for controlling ion fraction in physical vapor deposition processes 有权
$Methods and apparatus for controlling ion fraction in physical vapor deposition processes$
公开(公告)号：US11037768B2
公开(公告)日：2021-06-15
申请号：US15448996
申请日：2017-03-03
申请人： APPLIED MATERIALS, INC.
发明人： Xiaodong Wang , Joung Joo Lee , Fuhong Zhang , Martin Lee Riker , Keith A. Miller , William Fruchterman , Rongjun Wang , Adolph Miller Allen , Shouyin Zhang , Xianmin Tang
IPC分类号： H01J37/34 , C23C14/35 , C23C14/54 , H01L21/768 , H01L21/285
摘要： Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

6. 发明授权

US10563304B2 Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers 有权
公开(公告)号：US10563304B2
公开(公告)日：2020-02-18
申请号：US15482198
申请日：2017-04-07
申请人： APPLIED MATERIALS, INC.
发明人： Xiangjin Xie , Adolph Miller Allen , Xianmin Tang , Goichi Yoshidome
IPC分类号： H01L21/3215 , H01L21/768 , C23C14/34 , H01L21/321 , C23C14/54 , H01L21/683 , H01L21/285 , C23C16/455 , C23C14/58 , C23C14/22 , C23C16/02 , C23C14/56 , C23C16/56 , H01J37/32 , C23C14/02 , H01L23/532 , H01J37/34 , H01J3/34
摘要： Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

7. 发明授权

US10283334B2 Methods and apparatus for maintaining low non-uniformity over target life 有权
公开(公告)号：US10283334B2
公开(公告)日：2019-05-07
申请号：US14522066
申请日：2014-10-23
申请人： APPLIED MATERIALS, INC.
发明人： William Johanson , Fuhong Zhang , Adolph Miller Allen , Yu Liu
IPC分类号： C23C14/34 , H01J37/34 , C23C14/54 , H01J37/32 , C23C14/50
摘要： Embodiments of improved methods and apparatus for maintaining low non-uniformity over the course of the life of a target are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition chamber includes: disposing a substrate atop a substrate support having a cover ring that surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the cover ring; sputtering a source material from a target disposed opposite the substrate support to deposit a film atop the substrate while maintaining the first distance; and lowering the substrate support with respect to the cover ring and sputtering the source material from the target to deposit films atop subsequent substrates over a life of the target.

8. 外观设计

USD825504S1 Target profile for a physical vapor deposition chamber target 有权
公开(公告)号：USD825504S1
公开(公告)日：2018-08-14
申请号：US29610166
申请日：2017-07-10
申请人： APPLIED MATERIALS, INC.
设计人： Fuhong Zhang , William Johanson , Yu Liu , Adolph Miller Allen , Brij Datta , Keith A. Miller

9. 发明授权

US09499901B2 High density TiN RF/DC PVD deposition with stress tuning 有权
标题翻译：高密度TiN RF / DC PVD沉积与应力调谐
公开(公告)号：US09499901B2
公开(公告)日：2016-11-22
申请号：US13750318
申请日：2013-01-25
申请人： APPLIED MATERIALS, INC.
发明人： Yong Cao , Xianmin Tang , Adolph Miller Allen , Tza-Jing Gung
IPC分类号： C23C14/34 , C23C14/35 , C23C14/54 , H01J37/34
CPC分类号： C23C14/345 , C23C14/351 , C23C14/54 , H01J37/34
摘要： Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate.
摘要翻译：本文提供了在基板上沉积层的方法。在一些实施例中，在物理气相沉积（PVD）室中在衬底上沉积含金属层的方法可以包括以VHF频率将RF功率施加到包括设置在衬底上方的PVD室中的金属的靶，以形成来自等离子体形成气体的等离子体; 可选地向目标施加DC电力; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 并且将基板上的电位控制为与电离金属原子相同的极性，以在基板上沉积含金属层。

10. 发明申请

US20230088552A1 TOP MAGNETS FOR DECREASED NON-UNIFORMITY IN PVD 有权
公开(公告)号：US20230088552A1
公开(公告)日：2023-03-23
申请号：US17478047
申请日：2021-09-17
申请人： Applied Materials, Inc.
发明人： Borui Xia , Anthony Chih-Tung Chan , Shiyu Yue , Wei Lei , Aravind Miyar Kamath , Mukund Sundararajan , Rongjun Wang , Adolph Miller Allen
IPC分类号： H01F7/18 , C23C14/35
摘要： Magnet assemblies comprising a housing with a top plate each comprising aligned openings are described. The housing has a bottom ring and an annular wall with a plurality of openings formed in the bottom ring. The top plate is on the housing and has a plurality of openings aligned with the plurality of openings in the bottom ring of the housing. The magnet assembly may also include a non-conducting base plate and/or a conductive cover plate. Methods for using the magnet assembly and magnetic field tuning are also described.

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