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    • 1. 发明授权
    • Epitaxial reactor for mass production of wafers
    • 用于批量生产晶圆的外延反应堆
    • US08435349B2
    • 2013-05-07
    • US11921950
    • 2006-06-15
    • Antonio Luque LopezJuan Carlos Zamorano SaavedraIgnacio Tobias GaliciaHugo-Jose Rodriguez San Segundo
    • Antonio Luque LopezJuan Carlos Zamorano SaavedraIgnacio Tobias GaliciaHugo-Jose Rodriguez San Segundo
    • C23C16/00
    • C30B25/02C23C16/45504C23C16/45593C30B25/08C30B25/12C30B25/14C30B35/00H01L21/68757H01L21/68771H01L21/68785H01L31/18
    • A high throughput reactor for the mass production of wafers through chemical vapor deposition, mainly to form silicon epitaxies for the photovoltaic industry, is described. Main innovation is a high susceptor stacking density: several graphite susceptors are placed vertically and parallel to one another, electrically interconnected, and are heated by Joule effect. Electrical current gets to the susceptors from the current source through specially designed feedthroughs, which connect the cold room outside the deposition chamber with the hot susceptors. Gas flows vertically between susceptors. The substrates on which deposition occurs are placed on the susceptors. Below the susceptors a pre-chamber is found, in which entering gas calms down and distributes homogeneously. Susceptors and pre-chamber are placed inside a stainless steel chamber, which is internally covered by a reflecting material, and externally kept cold by water. Both susceptors and pre-chamber are fixed to a connection panel, which also contains electrical feedthroughs, thermocouple feedthroughs, and gas inlet and outlet. Outlet gases are partially recycled, with the corresponding gas savings and increased deposition efficiency.
    • 描述了通过化学气相沉积大量生产晶片的高通量反应器,主要用于形成用于光伏工业的硅表面。 主要创新是高感受体堆积密度:几个石墨感受器垂直放置并平行放置,电气互连,并通过焦耳效应加热。 通过专门设计的馈通将电流从电流源流到电流源,将馈电连接到沉积室外的冷室与热感受器。 气体在感受器之间垂直流动。 沉积发生的基板放置在基座上。 在感受器下方,发现一个预制室,其中进入气体平静下来并分布均匀。 寄生虫和预处理室放置在内部被反射材料覆盖的不锈钢室内,外部由水保持冷。 两个感受器和预充电器都固定在连接面板上,该连接面板还包含电气馈通,热电偶馈通,以及气体入口和出口。 出口气体被部分回收,相应的气体节省和增加的沉积效率。
    • 2. 发明申请
    • Epitaxial reactor for mass production of wafers
    • 用于批量生产晶圆的外延反应堆
    • US20090217877A1
    • 2009-09-03
    • US11921950
    • 2006-06-15
    • Antonio Luque LopezJuan Carlos Zamorano SaavedraIgnacio Tobias GaliciaHugo-Jose Rodriguez San Segundo
    • Antonio Luque LopezJuan Carlos Zamorano SaavedraIgnacio Tobias GaliciaHugo-Jose Rodriguez San Segundo
    • C23C16/54
    • C30B25/02C23C16/45504C23C16/45593C30B25/08C30B25/12C30B25/14C30B35/00H01L21/68757H01L21/68771H01L21/68785H01L31/18
    • A high throughput reactor for the mass production of wafers through chemical vapor deposition, mainly to form silicon epitaxies for the photovoltaic industry, is described. main innovation is a high susceptor stacking density: several graphite susceptors are placed vertically and parallel to one another, electrically interconnected, and are heated by Joule effect. Electrical current gets to the susceptors from the current source through specially designed feedthroughs, which connect the cold room outside the deposition chamber with the hot susceptors. Gas flows vertically between susceptors. The substrates on which deposition occurs are placed on the susceptors. Below the susceptors a pre-chamber is found, in which entering gas calms down and distributes homogeneously. Susceptors and pre-chamber are placed inside a stainless steel chamber, which is internally covered by a reflecting material, and externally kept cold by water. Both susceptors and pre-chamber are fixed to a connection panel, which also contains electrical feedthroughs, thermocouple feedthroughs, and gas inlet and outlet. Outlet gases are partially recycled, with the corresponding gas savings and increased deposition efficiency.
    • 描述了通过化学气相沉积大量生产晶片的高通量反应器,主要用于形成用于光伏工业的硅表面。 主要创新是高感受体堆积密度:几个石墨感受器垂直放置并相互平行放置,电互连,并被焦耳效应加热。 通过专门设计的馈通将电流从电流源流到电流源,将馈电连接到沉积室外的冷室与热感受器。 气体在感受器之间垂直流动。 沉积发生的基板放置在基座上。 在感受器下方,发现一个预制室,其中进入气体平静下来并分布均匀。 寄生虫和预处理室放置在内部被反射材料覆盖的不锈钢室内,外部由水保持冷。 两个感受器和预充电器都固定在连接面板上,该连接面板还包含电气馈通,热电偶馈通,以及气体入口和出口。 出口气体被部分回收,相应的气体节省和增加的沉积效率。