专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07723707B2 Techniques for plasma injection 有权
标题翻译：等离子体注入技术
公开(公告)号：US07723707B2
公开(公告)日：2010-05-25
申请号：US11781700
申请日：2007-07-23
申请人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
发明人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译：公开了用于离子束空间电荷中和的等离子体注入技术。在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上离子束路径的一侧，第一侧与第二侧相对。第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

2. 发明申请

US20050178981A1 Ion beam neutral detection 有权
标题翻译：离子束中性检测
公开(公告)号：US20050178981A1
公开(公告)日：2005-08-18
申请号：US11056445
申请日：2005-02-11
申请人： Anthony Renau , Joseph Olson , Eric Hermanson , Gordon Angel
发明人： Anthony Renau , Joseph Olson , Eric Hermanson , Gordon Angel
IPC分类号： G21K5/10 , H01J37/08 , H01J37/317
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/304
摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization
摘要翻译：公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。检测器包括一个位于离子注入机系统中的能量污染监测器。本发明的方法包括使用离子束植入工件，并且周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行调整以进行优化

3. 发明授权

US07170067B2 Ion beam measurement apparatus and method 有权
标题翻译：离子束测量装置及方法
公开(公告)号：US07170067B2
公开(公告)日：2007-01-30
申请号：US11093930
申请日：2005-03-30
申请人： Anthony Renau , Eric Hermanson , Joseph C. Olson , Gordon Angel
发明人： Anthony Renau , Eric Hermanson , Joseph C. Olson , Gordon Angel
IPC分类号： H01J49/00
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/004 , H01J2237/24405 , H01J2237/31703 , H01J2237/31705
摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
摘要翻译：本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极，正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

4. 发明申请

US20060192134A1 Ion beam measurement apparatus and method 有权
标题翻译：离子束测量装置及方法
公开(公告)号：US20060192134A1
公开(公告)日：2006-08-31
申请号：US11093930
申请日：2005-03-30
申请人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
发明人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
IPC分类号： G01K1/08
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/004 , H01J2237/24405 , H01J2237/31703 , H01J2237/31705
摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
摘要翻译：本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极，正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

5. 发明申请

US20090026390A1 TECHNIQUES FOR PLASMA INJECTION 有权
标题翻译：等离子体注射技术
公开(公告)号：US20090026390A1
公开(公告)日：2009-01-29
申请号：US11781700
申请日：2007-07-23
申请人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
发明人： Victor M. Benveniste , Gordon Angel , Bon-Woong Koo , Kourosh Saadatmand
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055
摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要翻译：公开了用于离子束空间电荷中和的等离子体注入技术。在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上离子束路径的一侧，第一侧与第二侧相对。第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

6. 发明申请

US20060097195A1 Apparatus and methods for two-dimensional ion beam profiling 有权
公开(公告)号：US20060097195A1
公开(公告)日：2006-05-11
申请号：US10981887
申请日：2004-11-05
申请人： Gordon Angel , Edward MacIntosh , Thomas Schaefer
发明人： Gordon Angel , Edward MacIntosh , Thomas Schaefer
IPC分类号： H01J37/302
CPC分类号： G01T1/29 , H01J37/304 , H01J37/3171
摘要： Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式