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1. 发明申请

US20060243961A1 Adaptive quantum design for QCSE devices and nanophotonic devices 审中-公开
标题翻译： QCSE器件和纳米光子器件的自适应量子设计
公开(公告)号：US20060243961A1
公开(公告)日：2006-11-02
申请号：US11215251
申请日：2005-08-30
申请人： Anthony Levi , Stephan Haas
发明人： Anthony Levi , Stephan Haas
IPC分类号： H01L31/00
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/01725
摘要： A QCSE device may have a semiconductor quantum well structure, with an energy band profile defined by a broken-symmetry quantum well potential V(x). The quantum well potential V(x) may be identified by adaptive numerical searches performed by a processing system, which uses adaptive algorithms to numerically optimize the quantum well potential, so as to most closely match a desired optical response of the QCSE device to incident optical radiation. A nanophotonic device may include a plurality of dielectric scattering centers distributed within a substantially uniform medium in an aperiodic, broken-symmetry spatial configuration. The spatial configuration of the dielectric elements may be numerically computed and optimized using iterative techniques, so as to most closely generate a desired target function response from the nanophotonic device.
摘要翻译： QCSE器件可以具有半导体量子阱结构，具有由对称对称量子阱势阱V（x）定义的能带分布。量子阱电位V（x）可以由处理系统执行的自适应数值搜索来识别，该处理系统使用自适应算法来数值优化量子阱电位，以便最接近地将QCSE器件的所需光响应与入射光辐射。纳米光子器件可以包括分布在基本上均匀的介质中的非周期的，不对称的空间配置的多个介电散射中心。可以使用迭代技术对介电元件的空间配置进行数值计算和优化，以便最紧密地从纳米光子器件产生期望的目标函数响应。

2. 发明授权

US07311449B2 High precision optoelectronic components 有权
标题翻译：高精度光电元件
公开(公告)号：US07311449B2
公开(公告)日：2007-12-25
申请号：US10643759
申请日：2003-08-18
申请人： Michael K Barnoski , Anthony Levi , Fritz Prinz , Alex Tarasyuk
发明人： Michael K Barnoski , Anthony Levi , Fritz Prinz , Alex Tarasyuk
IPC分类号： G02B6/36
CPC分类号： G02B6/3834 , G02B6/3636 , G02B6/3652 , G02B6/3839 , G02B6/3855 , G02B6/3877 , G02B6/3885
摘要： An optoelectronic assembly having components designed to be fabricated on a stamping process capable of producing parts having tolerances below 1000 nanometers. The optoelectronic assembly includes ferrules and sleeves. The ferrules can include two identical half ferrules that are forged and assembled together to form the ferrule body. The ferrules can also be designed to be alternatively produced by forming processes or produced by a combination of forging and forming processes. The pair of ferrules supporting one or more optical fibers are guided together by a high precision split sleeve for coupling the fibers together.
摘要翻译：一种光电组件，其具有被设计为在能够产生具有低于1000纳米的公差的部件的冲压工艺上制造的部件。光电组件包括套管和套管。套圈可以包括两个相同的半套圈，其被锻造并组装在一起以形成套圈本体。套圈也可以被设计成交替地通过成形方法生产或通过锻造和成型工艺的组合产生。支撑一个或多个光纤的一对套圈通过高精度的分裂套管一起被引导，以将纤维耦合在一起。

3. 发明授权

US07343770B2 Stamping system for manufacturing high tolerance parts 有权
标题翻译：用于制造高公差零件的冲压系统
公开(公告)号：US07343770B2
公开(公告)日：2008-03-18
申请号：US10620851
申请日：2003-07-15
申请人： Michael K Barnoski , David Cohen , Dan Harris , Sangkyun Kang , Anthony Levi , Miguel Pinilla , Fritz Prinz , Alex Tarasyuk
发明人： Michael K Barnoski , David Cohen , Dan Harris , Sangkyun Kang , Anthony Levi , Miguel Pinilla , Fritz Prinz , Alex Tarasyuk
IPC分类号： B21D28/26 , B26D5/08 , B21J13/04
CPC分类号： G02B6/3862 , B21D28/02 , B21D37/12 , B26F1/40 , G02B6/3636 , G02B6/3652 , G02B6/3833 , G02B6/3834 , G02B6/3839 , G02B6/3855 , G02B6/3877 , G02B6/3885 , Y10T83/4635 , Y10T83/8855 , Y10T83/9423 , Y10T83/9476
摘要： A system and process for stamping parts having tolerances below 1000 nanometers. The inventive system and process is particularly suited for producing optoelectronic parts. The system includes a stamping press and one or a progression of stamping stations for supporting a punch and die. The stamping stations are designed to maintain substantial alignment of the punch and die with minimal moving components. The stamping station includes a shaft for rigidly guiding the punch to the die. The stamping press is capable of providing the punch with the necessary force to perform the stamping operations. The system includes an interface system for interfacing the force of the press with the punch, while simultaneously structurally decoupling the press from the punch. The system also includes a locating sub-plate, for locating the stamping station in alignment relative to each other, and means for in-line machine stock material before entry into the stamping stations.
摘要翻译：用于冲压零件的系统和工艺，公差低于1000纳米。本发明的系统和方法特别适用于制造光电子部件。该系统包括冲压机和用于支撑冲头和模具的一个或一个或多个冲压站。冲压站被设计成通过最小的移动部件保持冲头和模具的大致对准。冲压站包括用于将冲头刚性地引导到模具的轴。冲压机能够为冲压机提供必要的力量来执行冲压操作。该系统包括用于将冲压机的力与冲头相接口的接口系统，同时在结构上使冲压机与冲头脱钩。该系统还包括用于将冲压站定位成相对于彼此的定位子板，以及用于在进入冲压站之前的在线机器原料的装置。

4. 发明授权

US07463998B2 Adaptive design of nanoscale electronic devices 有权
标题翻译：纳米级电子器件的自适应设计
公开(公告)号：US07463998B2
公开(公告)日：2008-12-09
申请号：US11673319
申请日：2007-02-09
申请人： Anthony Levi
发明人： Anthony Levi
IPC分类号： G06F19/00
CPC分类号： G06F17/505
摘要： A method of fabricating a semiconductor device so as to cause the device to have a desired transfer characteristic. Computations may be performed that predict a transfer characteristic of the semiconductor device for each of a plurality of different sets of values of available control parameters that may be used during the fabrication of the semiconductor device. A set of values of available control parameters that the computations predict will cause the semiconductor device to substantially provide the desired transfer characteristic may be identified, and the semiconductor device may be fabricated based on these identified values.
摘要翻译：一种制造半导体器件以使器件具有期望的转印特性的方法。可以执行可以在半导体器件的制造期间可以使用的可用控制参数的多个不同值的值中的每一个预测半导体器件的传输特性的计算。可以识别计算预测的可用控制参数的一组值将导致半导体器件基本上提供期望的传输特性，并且可以基于这些识别的值来制造半导体器件。

5. 发明申请

US20070198204A1 Adaptive Design of Nanoscale Electronic Devices 有权
标题翻译：纳米电子器件的自适应设计
公开(公告)号：US20070198204A1
公开(公告)日：2007-08-23
申请号：US11673319
申请日：2007-02-09
申请人： Anthony Levi
发明人： Anthony Levi
IPC分类号： G06F17/50
CPC分类号： G06F17/505
摘要： A method of fabricating a semiconductor device so as to cause the device to have a desired transfer characteristic. Computations may be performed that predict a transfer characteristic of the semiconductor device for each of a plurality of different sets of values of available control parameters that may be used during the fabrication of the semiconductor device. A set of values of available control parameters that the computations predict will cause the semiconductor device to substantially provide the desired transfer characteristic may be identified, and the semiconductor device may be fabricated based on these identified values.
摘要翻译：一种制造半导体器件以使器件具有期望的转印特性的方法。可以执行可以在半导体器件的制造期间可以使用的可用控制参数的多个不同值集合中的每一个预测半导体器件的传输特性的计算。可以识别计算预测的可用控制参数的一组值将导致半导体器件基本上提供期望的传输特性，并且可以基于这些识别的值来制造半导体器件。

6. 发明授权

US07023243B2 Current source evaluation sense-amplifier 失效
标题翻译：电流源评估感测放大器
公开(公告)号：US07023243B2
公开(公告)日：2006-04-04
申请号：US10397452
申请日：2003-03-26
申请人： Panduka Wijetunga , Anthony Levi
发明人： Panduka Wijetunga , Anthony Levi
IPC分类号： G01R19/00
CPC分类号： G11C7/062 , G11C2207/063 , H03F3/45179 , H03F3/72
摘要： A sense-amplifier based on current-source-evaluation. Compared to conventional sense-amplifiers, a design based on static-current sources scales better to small transistor geometries. The design has lower power consumption, reduced noise, and improved clock scaling.
摘要翻译：基于电流源评估的感应放大器。与传统的感测放大器相比，基于静态电流源的设计可以更好地扩展到小晶体管的几何形状。该设计具有较低的功耗，降低的噪声和改进的时钟缩放。

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