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1. 再颁专利

USRE39518E1 Run to run control process for controlling critical dimensions 有权
标题翻译：运行以运行控制过程以控制关键尺寸
公开(公告)号：USRE39518E1
公开(公告)日：2007-03-13
申请号：US09908390
申请日：2001-07-18
申请人： Anthony John Toprac , Douglas John Downey , Subhash Gupta
发明人： Anthony John Toprac , Douglas John Downey , Subhash Gupta
IPC分类号： H01L21/66 , H01L21/302
CPC分类号： H01L22/20
摘要： It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist each time as a manipulated variable. In an alternative embodiment, critical dimensions are controlled using RF power as a manipulated variable. A run-to-run control technique is used to drive the critical dimensions of integrated circuits to a set specification. In a run-to-run control technique a wafer test or measurement is made and a process control recipe is adjusted based on the result of the test or measurement on a run-by-run basis. The run-to-run control technique is applied to drive the critical dimensions of a polysilicon gate structure to a target specification. The run-to-run control technique is applied to drive the critical dimensions in an integrated circuit to a defined specification using photoresist etch time as a manipulated variable.
摘要翻译：已经发现，已知和未知的关键尺寸变化的所有原因通过调整光致抗蚀剂蚀刻的时间来补偿。因此，控制方法采用使用光致抗蚀剂蚀刻时间的控制系统作为前馈或反馈控制配置中的操纵变量来控制半导体制造期间的临界尺寸变化。通过调整光致抗蚀剂蚀刻时间来控制关键尺寸，实现了许多优点，包括减少的批次批量变化，增加的产量和增加的制造电路的速度。在一个实施例中，对微处理器电路中的多晶硅栅极关键尺寸控制实现了这些优点。使用仅使用前馈和反馈或反馈的控制方法来减少多晶硅栅极线宽变化。在一些实施例中，实施反馈控制以用于每次作为操纵变量来控制使用光致抗蚀剂的临界尺寸。在替代实施例中，使用RF功率作为操纵变量来控制临界尺寸。运行运行控制技术用于将集成电路的关键尺寸驱动到设定规格。在运行到运行的控制技术中，进行晶片测试或测量，并且基于逐个运行的测试或测量的结果来调整过程控制配方。运行运行控制技术用于将多晶硅栅极结构的关键尺寸驱动到目标规格。应用运行控制技术将集成电路中的关键尺寸驱动到使用光刻胶蚀刻时间作为操作变量的规定规格。

2. 发明授权

US5926690A Run-to-run control process for controlling critical dimensions 失效
标题翻译：用于控制关键尺寸的运行控制过程
公开(公告)号：US5926690A
公开(公告)日：1999-07-20
申请号：US864489
申请日：1997-05-28
申请人： Anthony John Toprac , Douglas John Downey , Subhash Gupta
发明人： Anthony John Toprac , Douglas John Downey , Subhash Gupta
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： H01L22/20
摘要： It has been discovered that all causes of critical dimension variation, both known and unknown, are compensated by adjusting the time of photoresist etch. Accordingly, a control method employs a control system using photoresist etch time as a manipulated variable in either a feedforward or a feedback control configuration to control critical dimension variation during semiconductor fabrication. By controlling critical dimensions through the adjustment of photoresist etch time, many advantages are achieved including a reduced lot-to-lot variation, an increased yield, and increased speed of the fabricated circuits. In one embodiment these advantages are achieved for polysilicon gate critical dimension control in microprocessor circuits. Polysilicon gate linewidth variability is reduced using a control method using either feedforward and feedback or feedback alone. In some embodiments, feedback control is implemented for controlling critical dimensions using photoresist etch time as a manipulated variable. In an alternative embodiment, critical dimensions are controlled using RF power as a manipulated variable. A run-to-run control technique is used to drive the critical dimensions of integrated circuits to a set specification. In a run-to-run control technique a wafer test or measurement is made and a process control recipe is adjusted based on the result of the test or measurement on a run-by-run basis. The run-to-run control technique is applied to drive the critical dimensions of a polysilicon gate structure to a target specification. The run-to-run control technique is applied to drive the critical dimensions in an integrated circuit to a defined specification using photoresist etch time as a manipulated variable.
摘要翻译：已经发现，已知和未知的关键尺寸变化的所有原因通过调整光致抗蚀剂蚀刻的时间来补偿。因此，控制方法采用使用光致抗蚀剂蚀刻时间的控制系统作为前馈或反馈控制配置中的操纵变量来控制半导体制造期间的临界尺寸变化。通过调整光致抗蚀剂蚀刻时间来控制关键尺寸，实现了许多优点，包括减少的批次批量变化，增加的产量和增加的制造电路的速度。在一个实施例中，对微处理器电路中的多晶硅栅极关键尺寸控制实现了这些优点。使用仅使用前馈和反馈或反馈的控制方法来减少多晶硅栅极线宽变化。在一些实施例中，实施反馈控制以使用光致抗蚀剂蚀刻时间来控制临界尺寸作为操纵变量。在替代实施例中，使用RF功率作为操纵变量来控制临界尺寸。运行运行控制技术用于将集成电路的关键尺寸驱动到设定规格。在运行到运行的控制技术中，进行晶片测试或测量，并且基于逐个运行的测试或测量的结果来调整过程控制配方。运行运行控制技术用于将多晶硅栅极结构的关键尺寸驱动到目标规格。应用运行控制技术将集成电路中的关键尺寸驱动到使用光刻胶蚀刻时间作为操作变量的规定规格。

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