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1. 发明授权

US07322242B2 Micro-electromechanical structure with improved insensitivity to thermomechanical stresses induced by the package 有权
标题翻译：微机电结构改善了对包装引起的热机械应力的不敏感性
公开(公告)号：US07322242B2
公开(公告)日：2008-01-29
申请号：US11201268
申请日：2005-08-10
申请人： Angelo Merassi , Bruno Murari , Sarah Zerbini
发明人： Angelo Merassi , Bruno Murari , Sarah Zerbini
IPC分类号： G01P15/00
CPC分类号： G01P15/125 , B81B7/0048 , B81B2201/0235 , G01P1/006 , G01P2015/082
摘要： In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.
摘要翻译：在微机电结构中，转子具有重心轴线，并且包括携带移动电极的悬挂结构。定子承载面向移动电极的固定电极。悬挂结构通过弹性元件连接到转子 - 锚定区域。定子包括至少一个定子元件，该定子元件承载多个固定电极并固定到定子 - 锚定区域。转子锚定区域和定子 - 锚定区域之一沿着重心轴线延伸，并且至少另一个转子 - 锚定区域和定子 - 锚定区域在重心轴线附近延伸。

2. 发明申请

US20060032310A1 Micro-electromechanical structure with improved insensitivity to thermomechanical stresses induced by the package 有权
标题翻译：微机电结构改善了对包装引起的热机械应力的不敏感性
公开(公告)号：US20060032310A1
公开(公告)日：2006-02-16
申请号：US11201268
申请日：2005-08-10
申请人： Angelo Merassi , Bruno Murari , Sarah Zerbini
发明人： Angelo Merassi , Bruno Murari , Sarah Zerbini
IPC分类号： G01P15/08 , H01L23/48
CPC分类号： G01P15/125 , B81B7/0048 , B81B2201/0235 , G01P1/006 , G01P2015/082
摘要： In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.
摘要翻译：在微机电结构中，转子具有重心轴线，并且包括携带移动电极的悬挂结构。定子承载面向移动电极的固定电极。悬挂结构通过弹性元件连接到转子 - 锚定区域。定子包括至少一个定子元件，该定子元件承载多个固定电极并固定到定子 - 锚定区域。转子锚定区域和定子 - 锚定区域之一沿着重心轴线延伸，并且至少另一个转子 - 锚定区域和定子 - 锚定区域在重心轴线附近延伸。

3. 发明授权

US08733170B2 Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
标题翻译：温度补偿微机电装置，以及微机电装置中的温度补偿方法
公开(公告)号：US08733170B2
公开(公告)日：2014-05-27
申请号：US12683888
申请日：2010-01-07
申请人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
发明人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC分类号： G01P15/08 , G01P21/00
CPC分类号： B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
摘要： A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
摘要翻译：微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。

4. 发明授权

US07678599B2 Process for the fabrication of an inertial sensor with failure threshold 有权
标题翻译：制造具有故障阈值的惯性传感器的过程
公开(公告)号：US07678599B2
公开(公告)日：2010-03-16
申请号：US11566590
申请日：2006-12-04
申请人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
发明人： Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
IPC分类号： H01L21/00
CPC分类号： H01H1/0036 , G01P1/023 , G01P15/06 , G01P15/0802 , G01P15/0891 , G01P15/18 , G01P2015/0814 , H01H35/146
摘要： A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
摘要翻译：用于制造具有故障阈值的惯性传感器的方法包括在半导体晶片的衬底的顶部上形成嵌入在牺牲区域中的样品元件的步骤，所述样品元件构造成在预选应变下断裂。该方法还包括在牺牲区域的顶部上形成连接到样品元件的主体并蚀刻牺牲区域以释放身体和样品元件。该方法还可以包括在基底上形成连接到身体的附加样品元件。

5. 发明授权

US07252002B2 Planar inertial sensor, in particular for portable devices having a stand-by function 有权
标题翻译：平面惯性传感器，特别是具有待机功能的便携式设备
公开(公告)号：US07252002B2
公开(公告)日：2007-08-07
申请号：US10948095
申请日：2004-09-23
申请人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
发明人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/125
CPC分类号： G01P15/0891 , G01P15/125 , G01P2015/0857 , H04M2250/12
摘要： A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.
摘要翻译：平面惯性传感器包括第一区域和第二半导体材料区域。第二区域电容耦合，并相对于第一区域移动。第二区域在平面中延伸并且具有面对第一区域的相应第一部分的第二部分。第二区域相对于第一区域在属于该平面的任何方向上的运动修改了第二部分和第一部分之间的距离，从而改变了电容耦合的值。

6. 发明授权

US07886601B2 Microelectromechanical sensor having multiple full-scale and sensitivity values 有权
标题翻译：具有多个满量程和灵敏度值的微机电传感器
公开(公告)号：US07886601B2
公开(公告)日：2011-02-15
申请号：US11978056
申请日：2007-10-26
申请人： Angelo Merassi , Sarah Zerbini , Hubert Geitner , Marco Del Sarto
发明人： Angelo Merassi , Sarah Zerbini , Hubert Geitner , Marco Del Sarto
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P1/023 , G01P15/0891 , G01P2015/0814 , G01P2015/082 , G01P2015/0831
摘要： A microelectromechanical sensing structure is provided with a mobile element adapted to be displaced as a function of a quantity to be detected, and first fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element first detection conditions. The sensing structure is further provided with second fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element second detection conditions, which are different from the first detection conditions. In particular, the first and second detection conditions differ with respect to a full-scale or a sensitivity value in the detection of the aforesaid quantity.
摘要翻译：微机电感测结构设置有适于根据要检测的量移位的移动元件以及电容耦合到移动元件并被配置为利用移动元件实现第一检测条件的第一固定元件。感测结构还设置有电容耦合到移动元件的第二固定元件，并被配置为与第一检测条件不同的移动元件第二检测条件实现。特别地，第一和第二检测条件相对于检测上述量的满量程或灵敏度值而不同。

7. 发明申请

US20080011080A1 MICROELECTROMECHANICAL INERTIAL SENSOR, IN PARTICULAR FOR FREE-FALL DETECTION APPLICATIONS 有权
标题翻译：微电子实时传感器，特别适用于自由落体检测应用
公开(公告)号：US20080011080A1
公开(公告)日：2008-01-17
申请号：US11777702
申请日：2007-07-13
申请人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
发明人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/18 , G01P15/125
CPC分类号： G11B19/04 , G01P15/0891 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.
摘要翻译：一种惯性传感器，其具有对沿着检测方向的加速度的第一，第二和第三分量敏感的检测结构，并且产生作为所述加速度分量的函数的相应的电量。检测结构在输出时提供作为所述电量的组合获得的合成电量，并且与由加速度分量的矢量和给出的作用在惯性传感器上的合成加速度的值相关联。特别地，检测结构是微机电型的，并且包括由半导体材料制成的可移动部分，该半导体材料形成有固定部分，第一，第二和第三检测电容器以及并联连接检测电容器的电互连部分 ; 所得到的电量是从所述连接并联获得的电容。

8. 发明申请

US20050274184A1 Planar inertial sensor, in particular for portable devices having a stand-by function 有权
标题翻译：平面惯性传感器，特别是具有待机功能的便携式设备
公开(公告)号：US20050274184A1
公开(公告)日：2005-12-15
申请号：US10948095
申请日：2004-09-23
申请人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
发明人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/08 , G01P15/125 , G01P15/00
CPC分类号： G01P15/0891 , G01P15/125 , G01P2015/0857 , H04M2250/12
摘要： A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.
摘要翻译：平面惯性传感器包括第一区域和第二半导体材料区域。第二区域电容耦合，并相对于第一区域移动。第二区域在平面中延伸并且具有面对第一区域的相应第一部分的第二部分。第二区域相对于第一区域在属于该平面的任何方向上的运动修改了第二部分和第一部分之间的距离，从而改变了电容耦合的值。

9. 发明申请

US20100107391A1 TEMPERATURE-COMPENSATED MICRO-ELECTROMECHANICAL DEVICE, AND METHOD OF TEMPERATURE COMPENSATION IN A MICRO-ELECTROMECHANICAL DEVICE 有权
标题翻译：温度补偿型微电化学装置及微机电装置中的温度补偿方法
公开(公告)号：US20100107391A1
公开(公告)日：2010-05-06
申请号：US12683888
申请日：2010-01-07
申请人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
发明人： Ernesto Lasalandra , Angelo Merassi , Sarah Zerbini
IPC分类号： H01G7/00
CPC分类号： B81C1/0069 , B81B3/0081 , B81B2201/025 , B81C1/00158 , B81C1/00666 , G01C19/56 , G01C19/5755 , G01P1/006 , G01P15/125 , G01P15/18 , G01P2015/0814 , H03H9/02448 , H03H2009/02496 , Y10T29/43
摘要： A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.
摘要翻译：微机电装置包括半导体衬底，其中第一微结构和第二参考微结构被集成。第一微结构和第二微结构被布置在基板中，以便由于基板的热膨胀而产生相等的应变。此外，第一微结构相对于基板设置有可移动部件和固定部件，而第二微结构具有与第一微结构基本对称的形状，但是相对于基板固定。通过从第一微结构的电特性减去第一微结构的电特性的变化，可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。

10. 发明申请

US20070238212A1 Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress 有权
标题翻译：微机电结构具有由热机械应力引起的热漂移的自补偿
公开(公告)号：US20070238212A1
公开(公告)日：2007-10-11
申请号：US11226930
申请日：2005-09-14
申请人： Angelo Merassi , Sarah Zerbini , Benedetto Vigna
发明人： Angelo Merassi , Sarah Zerbini , Benedetto Vigna
IPC分类号： H01L21/00
CPC分类号： G01P15/125 , G01P2015/082
摘要： In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.
摘要翻译：在半导体材料的微机电结构中，通过定子和转子形成检测结构，转子在外部应力的存在下可相对移动，并受到热应力; 受到热应力和相对于外部应力不变的微机电类型的补偿结构连接到检测结构，由此微机电结构提供与外部应力相关并且被补偿的输出信号。

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