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1. 发明申请

US20050233506A1 Semiconductor device with leakage implant and method of fabrication 失效
标题翻译：具有漏电注入的半导体器件及其制造方法
公开(公告)号：US20050233506A1
公开(公告)日：2005-10-20
申请号：US11159514
申请日：2005-06-22
申请人： Andrew Horch , Hyun-Jin Cho , Farid Nemati , Scott Robins , Rajesh Gupta , Kevin Yang
发明人： Andrew Horch , Hyun-Jin Cho , Farid Nemati , Scott Robins , Rajesh Gupta , Kevin Yang
IPC分类号： G11C11/39 , H01L29/74 , H01L29/749 , H01L21/332
CPC分类号： G11C11/39 , H01L27/0817 , H01L29/7436 , H01L29/7455 , H01L29/749
摘要： A method of fabricating a thyristor-based memory may include forming different opposite conductivity-type regions in silicon for defining a thyristor and an access device in series relationship. An activation anneal may activate dopants previously implanted for the different regions. A damaging implant of germanium or xenon or argon may be directed into select regions of the silicon including at least one p-n junction region for the access device and the thyristor. A re-crystallization anneal may then be performed to re-crystallize at least some of the damaged lattice structure resulting from the damaging implant. The re-crystallization anneal may use a temperature less than that of the previous activation anneal.
摘要翻译：制造基于晶闸管的存储器的方法可以包括在硅中形成用于限定可控硅和串联连接的存取装置的不同的相反导电型区域。激活退火可以激活先前为不同区域植入的掺杂剂。可以将锗或氙或氩的有害植入物引导到硅的选择区域中，包括用于进入装置和晶闸管的至少一个p-n结区域。然后可以进行重结晶退火，以重新结晶由损伤性植入物引起的至少一些损伤的晶格结构。再结晶退火可以使用比先前激活退火的温度低的温度。

2. 发明授权

US06727528B1 Thyristor-based device including trench dielectric isolation for thyristor-body regions 失效
标题翻译：基于晶闸管的器件包括可晶体管体区域的沟槽介质隔离
公开(公告)号：US06727528B1
公开(公告)日：2004-04-27
申请号：US09815213
申请日：2001-03-22
申请人： Scott Robins , Andrew Horch , Farid Nemati , Hyun-Jin Cho
发明人： Scott Robins , Andrew Horch , Farid Nemati , Hyun-Jin Cho
IPC分类号： H01L2974
CPC分类号： H01L29/66363 , H01L21/76229 , H01L21/76237 , H01L21/763 , H01L27/0617 , H01L27/0817
摘要： A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to include at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.
摘要翻译：半导体器件包括设计用于减少或消除在NDR器件的形成和操作中通常经历的制造和操作困难的晶闸管。根据本发明的一个示例性实施例，半导体衬底在掺杂或可掺杂的衬底区域附近被沟槽，该衬底区域被形成为包括具有不同极性的至少两个垂直相邻的晶闸管区域。用于晶闸管的电容耦合控制端口耦合到至少一个晶闸管区域。沟槽还包括用于使垂直相邻的晶闸管区域电绝缘的电介质材料。晶闸管电连接到器件中的其它电路，例如晶体管，并用于形成诸如存储器单元的器件。

3. 发明授权

US06777271B1 Thyristor-based device including trench isolation 失效
标题翻译：基于晶闸管的器件包括沟槽隔离
公开(公告)号：US06777271B1
公开(公告)日：2004-08-17
申请号：US10201654
申请日：2002-07-23
申请人： Scott Robins , Andrew Horch , Farid Nemati , Hyun-Jin Cho
发明人： Scott Robins , Andrew Horch , Farid Nemati , Hyun-Jin Cho
IPC分类号： H01L21332
CPC分类号： H01L29/66363 , H01L21/76229 , H01L21/76237 , H01L21/763 , H01L27/0617 , H01L27/0817
摘要： A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According to one example embodiment of the present invention, the semiconductor substrate is trenched adjacent a doped or dopable substrate region, which is formed to included at least two vertically-adjacent thyristor regions of different polarity. A capacitively-coupled control port for the thyristor is coupled to at least one of the thyristor regions. The trench also includes a dielectric material for electrically insulating the vertically-adjacent thyristor regions. The thyristor is electrically connected to other circuitry in the device, such as a transistor, and used to form a device, such as a memory cell.
摘要翻译：半导体器件包括设计用于减少或消除在NDR器件的形成和操作中通常经历的制造和操作困难的晶闸管。根据本发明的一个示例实施例，半导体衬底在掺杂或可掺杂的衬底区域附近被沟槽，该衬底区域形成为包括不同极性的至少两个垂直相邻的晶闸管区域。用于晶闸管的电容耦合控制端口耦合到至少一个晶闸管区域。沟槽还包括用于使垂直相邻的晶闸管区域电绝缘的电介质材料。晶闸管电连接到器件中的其它电路，例如晶体管，并用于形成诸如存储器单元的器件。

4. 发明授权

US06690038B1 Thyristor-based device over substrate surface 失效
标题翻译：基于晶体管的器件超过衬底表面
公开(公告)号：US06690038B1
公开(公告)日：2004-02-10
申请号：US10200987
申请日：2002-07-23
申请人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
发明人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
IPC分类号： H01L29423
CPC分类号： H01L29/74 , H01L27/0617 , H01L27/0688 , H01L29/41716 , H01L29/42308
摘要： A semiconductor device having a thyristor is arranged in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices, as well as facilitates the implementation of the semiconductor device in a variety of applications. According to an example embodiment of the present invention, a thyristor is formed having some or all of the body of the thyristor extending above a substrate surface of a semiconductor device. The semiconductor device includes at least one transistor having source/drain regions formed in the substrate prior to the formation of the thyristor. One or more layers of material are deposited on the substrate surface and used to form a portion of a body of the thyristor that includes anode and cathode end portions. Each end portion is formed having a base region and an emitter region, and at least one of the end portions includes a portion that is in the substrate and electrically coupled to the transistor. A control port is formed capacitively coupled to at least one of the base regions.
摘要翻译：具有晶闸管的半导体器件以减少或消除在形成这些器件中通常经历的制造困难的方式布置，并且有助于在各种应用中实现半导体器件。根据本发明的示例性实施例，形成了晶闸管，其中半导体器件的衬底表面上方延伸有晶闸管的一部分或全部。半导体器件包括至少一个晶体管，其在形成晶闸管之前在衬底中形成有源/漏区。一层或多层材料沉积在衬底表面上，并用于形成包括阳极和阴极端部的晶闸管体的一部分。每个端部形成为具有基极区域和发射极区域，并且至少一个端部部分包括位于衬底中并电耦合到晶体管的部分。形成电容耦合到至少一个基极区域的控制端口。

5. 发明授权

US06583452B1 Thyristor-based device having extended capacitive coupling 失效
标题翻译：具有扩展电容耦合的基于晶闸管的器件
公开(公告)号：US06583452B1
公开(公告)日：2003-06-24
申请号：US10023060
申请日：2001-12-17
申请人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
发明人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
IPC分类号： H01L2974
CPC分类号： H01L29/7436 , H01L27/0817 , H01L29/42308 , H01L29/74
摘要： A thyristor-based semiconductor device has a thyristor that exhibits increased capacitive coupling between a conductive structure and a portion of a thyristor. According to an example embodiment of the present invention, the thyristor-based semiconductor device is manufactured having an extended portion that is outside a current path through the thyristor and that capacitively couples a conductive structure to a portion of the thyristor for controlling the current through the path. In one particular implementation, the extended portion extends from a base region of the thyristor and is outside of a current path through the base region and between an adjacent base region and an adjacent emitter region. A gate is formed capacitively coupled to the base region via the extended portion. In this manner, the control of the thyristor with the gate exhibits increased capacitive coupling, as compared to the control without the extended portion.
摘要翻译：基于晶闸管的半导体器件具有在导电结构和晶闸管的一部分之间呈现增加的电容耦合的晶闸管。根据本发明的示例性实施例，制造了晶闸管基半导体器件，其具有通过晶闸管的电流通路外部的延伸部分，并且将导电结构电容耦合到晶闸管的一部分，以控制电流通过路径。在一个特定实施方案中，延伸部分从晶闸管的基极区域延伸，并且在通过基极区域的电流路径之间以及在相邻的基极区域和相邻的发射极区域之间。通过延伸部分形成电容耦合到基极区的栅极。以这种方式，与没有延伸部分的控制器相比，具有栅极的晶闸管的控制表现出增加的电容耦合。

6. 发明授权

US06653174B1 Thyristor-based device over substrate surface 失效
标题翻译：基于晶体管的器件超过衬底表面
公开(公告)号：US06653174B1
公开(公告)日：2003-11-25
申请号：US10023052
申请日：2001-12-17
申请人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
发明人： Hyun-Jin Cho , Andrew Horch , Scott Robins , Farid Nemati
IPC分类号： H01L21332
CPC分类号： H01L29/74 , G11C11/39 , H01L27/0617 , H01L27/0688 , H01L27/1023 , H01L27/1027 , H01L27/11 , H01L27/1104 , H01L29/41716 , H01L29/42308 , H01L29/749 , H01L29/87
摘要： A semiconductor device having a thyristor is manufactured in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices. According to an example embodiment of the present invention, a thyristor is formed having some or all of the body of the thyristor extending above a substrate surface of a semiconductor device. The semiconductor device includes at least one transistor having source/drain regions formed in the substrate prior to the formation of the thyristor. One or more layers of material are deposited on the substrate surface and used to form a portion of a body of the thyristor that includes anode and cathode end portions. Each end portion is formed having a base region and an emitter region, and at least one of the end portions includes a portion that is in the substrate and electrically coupled to the transistor. A control port is formed capacitively coupled to at least one of the base regions.
摘要翻译：制造具有晶闸管的半导体器件以减少或消除在形成这些器件时通常经历的制造困难的方式。根据本发明的示例性实施例，形成了晶闸管，其中半导体器件的衬底表面上方延伸有晶闸管的一部分或全部。半导体器件包括至少一个晶体管，其在形成晶闸管之前在衬底中形成有源/漏区。一层或多层材料沉积在衬底表面上，并用于形成包括阳极和阴极端部的晶闸管体的一部分。每个端部形成为具有基极区域和发射极区域，并且至少一个端部部分包括位于衬底中并电耦合到晶体管的部分。形成电容耦合到至少一个基极区域的控制端口。

7. 发明授权

US06965129B1 Thyristor-based device having dual control ports 失效
标题翻译：具有双控制端口的基于晶闸管的装置
公开(公告)号：US06965129B1
公开(公告)日：2005-11-15
申请号：US10288953
申请日：2002-11-06
申请人： Andrew Horch , Scott Robins , Farid Nemati
发明人： Andrew Horch , Scott Robins , Farid Nemati
IPC分类号： G11C11/39 , H01L21/8239 , H01L27/08 , H01L27/102 , H01L27/105 , H01L27/108 , H01L29/74
CPC分类号： G11C11/39 , H01L27/1025 , H01L27/1027 , H01L27/105 , H01L27/1052 , H01L27/108 , H01L29/7436
摘要： Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based semiconductor device includes a thyristor having first and second base regions coupled between first and second emitter regions, respectively. A first control port capacitively couples a first signal to the first base region, and a second control port capacitively couples a second signal to the second base region. Each of the first and second signals have a charge that is opposite in polarity, and the opposite polarity signals effect the switching of the thyristor at a lower power, relative to the power that would be required to switch the thyristor having only one control port. In this manner, power consumption for a switching operation can be reduced, which is useful, for example, to correspond with reduced power supplied to other devices in a semiconductor device employing the thyristor.
摘要翻译：使用适于在阻塞状态和导通状态之间切换的基于晶闸管的半导体器件来增强诸如存储器件中使用的切换操作。根据本发明的示例性实施例，基于晶闸管的半导体器件包括分别具有耦合在第一和第二发射极区之间的第一和第二基极区域的晶闸管。第一控制端口将第一信号电容耦合到第一基区，并且第二控制端口将第二信号电容耦合到第二基区。第一和第二信号中的每一个具有极性相反的电荷，相反的极性信号相对于仅具有一个控制端口的晶闸管所需的功率，以较低的功率影响晶闸管的开关。以这种方式，可以减少用于开关操作的功耗，这对于例如提供给采用晶闸管的半导体器件中的其它器件的降低的功率是有用的。

8. 发明授权

US06872602B1 Carrier coupler for thyristor-based semiconductor device 失效
标题翻译：用于晶闸管的半导体器件的载流子耦合器
公开(公告)号：US06872602B1
公开(公告)日：2005-03-29
申请号：US10785166
申请日：2004-02-23
申请人： Farid Nemati , Badredin Fatemizadeh , Andrew Horch , Scott Robins
发明人： Farid Nemati , Badredin Fatemizadeh , Andrew Horch , Scott Robins
IPC分类号： H01L21/8242 , H01L21/8244 , H01L27/08 , H01L27/108 , H01L27/11 , H01L29/417 , H01L29/74 , H01L21/332
CPC分类号： H01L29/41716 , H01L27/0817 , H01L27/108 , H01L27/10844 , H01L27/11 , H01L29/74
摘要： Switching times of a thyristor-based semiconductor device are improved by enhancing carrier drainage from a buried thyristor-emitter region. According to an example embodiment of the present invention, a conductive contact extends to a doped well region buried in a substrate and is adapted to drain carriers therefrom. The device includes a thyristor body having at least one doped emitter region buried in the doped well region. A conductive thyristor control port is adapted to capacitively couple to the thyristor body and to control current flow therein. With this approach, the thyristor can be rapidly switched between resistance states, which has been found to be particularly useful in high-speed data latching implementations including but not limited to memory cell applications.
摘要翻译：通过增强从掩埋晶闸管 - 发射极区域的载流子排放，可以改善晶闸管基半导体器件的开关时间。根据本发明的示例性实施例，导电接触延伸到掩埋在衬底中的掺杂阱区，并且适于从其引出载流子。该器件包括晶体管本体，其具有埋在掺杂阱区中的至少一个掺杂射极区。导电晶闸管控制端口适于电容耦合到晶闸管主体并控制其中的电流。通过这种方法，晶闸管可以在电阻状态之间快速切换，这已经被发现在包括但不限于存储器单元应用的高速数据锁存实现中特别有用。

9. 发明授权

US06828176B1 Thyristor having a first emitter with relatively lightly doped portion to the base 失效
标题翻译：晶闸管具有第一发射极，该基极具有相对轻掺杂的部分
公开(公告)号：US06828176B1
公开(公告)日：2004-12-07
申请号：US10650334
申请日：2003-08-28
申请人： Farid Nemati , Scott Robins , Andrew Horch
发明人： Farid Nemati , Scott Robins , Andrew Horch
IPC分类号： H01L21332
CPC分类号： G11C11/39 , H01L27/1203 , H01L29/0834 , H01L29/41725 , H01L29/7436
摘要： A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lightly-doped portion having a light dopant concentration, relative to the base region. In one embodiment, the thyristor is implemented in a memory circuit, wherein the emitter region is coupled to a reference voltage line and a control port is arranged for capacitively coupling to the thyristor for controlling current flow therein. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure. With these approaches, current flow in the thyristor, e.g., for data storage therein, can be tightly controlled.
摘要翻译：基于晶闸管的半导体器件表现出相对增加的基极 - 发射极电容。根据本发明的示例性实施例，晶闸管的基极区域和相邻发射极区域被掺杂，使得发射极区域相对于基极区域具有光掺杂剂浓度的轻掺杂部分。在一个实施例中，晶闸管实现在存储器电路中，其中发射极区域耦合到参考电压线，并且控制端口布置成电容耦合到晶闸管以控制其中的电流流动。在另一实施方案中，晶闸管形成在绝缘体上硅（SOI）结构的掩埋绝缘体层上。利用这些方法，可以严格控制晶闸管中的电流，例如用于数据存储在其中。

10. 发明授权

US06703646B1 Thyristor with lightly-doped emitter 失效
标题翻译：晶闸管具有在基极上具有相对轻掺杂部分的第一发射极
公开(公告)号：US06703646B1
公开(公告)日：2004-03-09
申请号：US10253363
申请日：2002-09-24
申请人： Farid Nemati , Scott Robins , Andrew Horch
发明人： Farid Nemati , Scott Robins , Andrew Horch
IPC分类号： H01L2974
CPC分类号： G11C11/39 , H01L27/1203 , H01L29/0834 , H01L29/41725 , H01L29/7436
摘要： A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, a base region and an adjacent emitter region of a thyristor are doped such that the emitter region has a lightly-doped portion having a light dopant concentration, relative to the base region. In one embodiment, the thyristor is implemented in a memory circuit, wherein the emitter region is coupled to a reference voltage line and a control port is arranged for capacitively coupling to the thyristor for controlling current flow therein. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure. With these approaches, current flow in the thyristor, e.g., for data storage therein, can be tightly controlled.
摘要翻译：基于晶闸管的半导体器件表现出相对增加的基极 - 发射极电容。根据本发明的示例性实施例，晶闸管的基极区域和相邻发射极区域被掺杂，使得发射极区域相对于基极区域具有光掺杂剂浓度的轻掺杂部分。在一个实施例中，晶闸管实现在存储器电路中，其中发射极区域耦合到参考电压线，并且控制端口布置成电容耦合到晶闸管以控制其中的电流流动。在另一实施方案中，晶闸管形成在绝缘体上硅（SOI）结构的掩埋绝缘体层上。利用这些方法，可以严格控制晶闸管中的电流，例如用于数据存储在其中。

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