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1. 发明申请

US20080141939A1 ENCAPSULATED AND WATER COOLED ELECTROMAGNET ARRAY 有权
标题翻译：封装和水冷电磁炉阵列
公开(公告)号：US20080141939A1
公开(公告)日：2008-06-19
申请号：US11610075
申请日：2006-12-13
申请人： Andrew Gillard , Anthony Vesci , Keith A. Miller
发明人： Andrew Gillard , Anthony Vesci , Keith A. Miller
IPC分类号： C23C16/513 , H01F41/04 , H01F7/20
CPC分类号： H01J37/3266 , H01F7/128 , H01F7/20 , H01F27/16 , H01J37/32623 , H01J37/3458 , H01J37/347 , Y10T29/4902
摘要： A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.
摘要翻译：一种电磁体阵列结构，其包括捕获在例如固化环氧树脂的刚性密封剂中的多个电磁线圈，以形成可放置在等离子体处理室的壁周围的整体式独立结构。液体冷却盘管也可以被捕获在电磁线圈之间的密封剂中。该结构还可以包括水配件，定位销，通过用于室螺栓的管和提升支架。

2. 发明授权

US07846310B2 Encapsulated and water cooled electromagnet array 有权
标题翻译：封装和水冷电磁铁阵列
公开(公告)号：US07846310B2
公开(公告)日：2010-12-07
申请号：US11610075
申请日：2006-12-13
申请人： Andrew Gillard , Anthony Vesci , Keith A. Miller
发明人： Andrew Gillard , Anthony Vesci , Keith A. Miller
IPC分类号： C23C14/35
CPC分类号： H01J37/3266 , H01F7/128 , H01F7/20 , H01F27/16 , H01J37/32623 , H01J37/3458 , H01J37/347 , Y10T29/4902
摘要： A electromagnet array structure including multiple electromagnetic coils captured in a rigid encapsulant, for example, of cured epoxy resin, to form a unitary free-standing structure which can be placed around the walls of a plasma processing chamber. A liquid cooling coil may also be captured in the encapsulant between the electromagnetic coils. The structure may additionally include water fittings, locating pins, through tubes for chamber bolts, and lifting brackets.
摘要翻译：一种电磁体阵列结构，其包括捕获在例如固化环氧树脂的刚性密封剂中的多个电磁线圈，以形成可放置在等离子体处理室的壁周围的整体式独立结构。液体冷却盘管也可以被捕获在电磁线圈之间的密封剂中。该结构还可以包括水配件，定位销，通过用于室螺栓的管和提升支架。

3. 发明授权

US09062379B2 Wafer processing deposition shielding components 有权
标题翻译：晶圆处理沉积屏蔽组件
公开(公告)号：US09062379B2
公开(公告)日：2015-06-23
申请号：US13524859
申请日：2012-06-15
申请人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
发明人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
IPC分类号： C23C14/56 , H01J37/34
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译：本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带基板支撑的边缘。

4. 发明申请

US20130334038A1 WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS 有权
公开(公告)号：US20130334038A1
公开(公告)日：2013-12-19
申请号：US13524859
申请日：2012-06-15
申请人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
发明人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , H01J37/32651 , H01J37/3405 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

5. 发明授权

US08573932B2 Compressor blade root heating system 失效
标题翻译：压缩机叶片根加热系统
公开(公告)号：US08573932B2
公开(公告)日：2013-11-05
申请号：US12852720
申请日：2010-08-09
申请人： Christopher W. Ross , Keith A. Miller
发明人： Christopher W. Ross , Keith A. Miller
IPC分类号： F01D25/10
CPC分类号： F01D5/147 , F01D5/3007 , F02C7/04 , F04D29/324 , F04D29/34 , F04D29/584 , F05D2260/20 , F05D2270/114
摘要： The compressor blade root heating system may be formed from one or more induction heaters formed from one or more induction coils positioned in close proximity to a root of a compressor blade. In one embodiment, the induction heater may be coupled to a static casing component positioned immediately upstream of a first row of compressor blades on a rotor assembly such that the induction heater is stationary during turbine engine operation. The induction heater causes eddy current formation, which heats the row one compressor blades. This heating increases the fracture toughness of the material forming the rotor and compressor blades, thereby increasing the mechanical life cycle.
摘要翻译：压缩机叶片根部加热系统可以由一个或多个感应加热器形成，该感应加热器由位于压缩机叶片的根部附近的一个或多个感应线圈形成。在一个实施例中，感应加热器可以耦合到位于转子组件上的第一排压缩机叶片的紧邻上游的静态壳体部件，使得感应加热器在涡轮发动机运转期间是静止的。感应加热器引起涡流形成，这加热了一排压缩机叶片。这种加热增加了形成转子和压缩机叶片的材料的断裂韧性，从而增加了机械寿命周期。

6. 发明授权

US08559159B2 Electrostatic chuck and methods of use thereof 有权
标题翻译：静电吸盘及其使用方法
公开(公告)号：US08559159B2
公开(公告)日：2013-10-15
申请号：US13198204
申请日：2011-08-04
申请人： Shambhu N. Roy , Martin Lee Riker , Keith A. Miller , Vijay D. Parkhe , Steven V. Sansoni
发明人： Shambhu N. Roy , Martin Lee Riker , Keith A. Miller , Vijay D. Parkhe , Steven V. Sansoni
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck and method of use thereof is provided herein. In some embodiments, an electrostatic chuck may include a disk having a first side to support a substrate thereon and a second side, opposing the first side, to provide an interface to selectively couple the disk to a thermal control plate, a first electrode disposed within the disk proximate the first side to electrostatically couple the substrate to the disk and a second electrode disposed within the disk proximate the opposing side of the disk to electrostatically couple the disk to the thermal control plate. In some embodiments, the second electrode may also be configured to heat the disk.
摘要翻译：本文提供了静电卡盘及其使用方法。在一些实施例中，静电卡盘可以包括具有支撑其上的基板的第一侧的盘和与第一侧相对的第二侧，以提供用于选择性地将盘耦合到热控制板的界面，第一电极设置在靠近第一侧的盘，以将衬底静电耦合到盘，以及设置在靠近盘的相对侧的盘内的第二电极，以将盘静电耦合到热控制板。在一些实施例中，第二电极也可以被配置为加热盘。

7. 发明申请

US20130112554A1 DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 审中-公开
标题翻译：用于物理蒸气沉积室的沉积环和静电吸盘
公开(公告)号：US20130112554A1
公开(公告)日：2013-05-09
申请号：US13662380
申请日：2012-10-26
申请人： MUHAMMAD RASHEED , Keith A. Miller , Rongjun Wang
发明人： MUHAMMAD RASHEED , Keith A. Miller , Rongjun Wang
IPC分类号： C23C14/34
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地说，本文描述的实施例涉及包括沉积环和基座组件的处理套件。处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

8. 发明申请

US20120211359A1 WAFER PROCESSING DEPOSITION SHIELDING COMPONENTS 有权
标题翻译：波浪加工沉积屏蔽部件
公开(公告)号：US20120211359A1
公开(公告)日：2012-08-23
申请号：US13457441
申请日：2012-04-26
申请人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
发明人： Martin Lee Riker , Keith A. Miller , Anantha Subramani
IPC分类号： C23C14/34
CPC分类号： C23C16/4585 , C23C14/34 , C23C14/50 , C23C14/564 , H01J37/32623 , H01J37/32633 , H01J37/3408 , H01J37/3441
摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
摘要翻译：本文描述的实施例通常涉及用于半导体处理室的部件，用于半导体处理室的处理套件和具有处理套件的半导体处理室。在一个实施例中，提供了用于环绕溅射靶的底部屏蔽件和衬底支撑件。下屏蔽包括具有第一直径的圆柱形外带，其尺寸被设计成围绕溅射靶的溅射表面和衬底支撑件，该圆柱形带包括围绕溅射靶的溅射表面的顶壁和围绕溅射靶的底壁衬底支撑件，包括搁置表面并从圆柱形外带径向向外延伸的支撑凸缘，从圆柱形带的底壁径向向内延伸的底板，以及与基板耦合并部分围绕外围的圆柱形内带基板支撑的边缘。

9. 发明申请

US20120103257A1 DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：用于物理蒸气沉积室的沉积环和静电吸盘
公开(公告)号：US20120103257A1
公开(公告)日：2012-05-03
申请号：US13280771
申请日：2011-10-25
申请人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
发明人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
IPC分类号： C23C16/458 , C23C16/04 , C23C16/44
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

10. 发明授权

US07718045B2 Ground shield with reentrant feature 有权
标题翻译：具有可重入功能的防护罩
公开(公告)号：US07718045B2
公开(公告)日：2010-05-18
申请号：US11426775
申请日：2006-06-27
申请人： Jennifer W. Tiller , Anantha Subramani , Michael S. Cox , Keith A. Miller
发明人： Jennifer W. Tiller , Anantha Subramani , Michael S. Cox , Keith A. Miller
IPC分类号： C23C14/34
CPC分类号： H01J37/3405 , H01J37/32623 , H01J2237/0206 , H01J2237/026
摘要： The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.
摘要翻译：本发明通常提供用于物理气相沉积（PVD）室的接地屏蔽。在一个实施例中，接地屏蔽包括大致圆柱形的主体，其包括外壁，内上壁，直径小于内上壁的直径的内下壁和连接上下壁的可重入特征。可折入特征有利于防止护罩和靶之间的拱形，这促进了更大的工艺均匀性和重复性以及更长的腔室部件使用寿命。

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