会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Deglaze route to compensate for film non-uniformities after STI oxide processing
    • DeGaaze路径补偿STI氧化物处理后的膜不均匀性
    • US07351642B2
    • 2008-04-01
    • US11036536
    • 2005-01-14
    • Walter HartnerJoseph PageJonathan Davis
    • Walter HartnerJoseph PageJonathan Davis
    • H01L21/76
    • H01L21/31055
    • A process and method for compensating for a radial non-uniformity on a wafer that includes the steps of: centering a rotational thickness non-uniformity of a film on the wafer about the axis of the spin susceptor following a CMP process; positioning a nozzle in the spin processing unit to direct the etching solution along a radius of the wafer; adjusting the flow of the etching solution from the nozzle; adjusting the rotational speed of the spin susceptor to control the residence time of the etching solution; and coordinating the rotational speed of the spin susceptor, flow of etching solution and positioning of the nozzle to maximize the removal of material. The process may be utilized to compensate for the bowl-shaped non-uniformities of an STI oxide. These non-uniformities are compensated for and addressed after a CMP process.
    • 一种用于补偿晶片上的径向不均匀性的方法和方法,包括以下步骤:在CMP工艺之后使膜周围的旋转基座的轴线上的膜的旋转厚度不均匀性居中; 将喷嘴定位在旋转处理单元中以沿着晶片的半径引导蚀刻溶液; 从喷嘴调节蚀刻溶液的流动; 调整旋转基座的旋转速度以控制蚀刻溶液的停留时间; 并协调旋转基座的旋转速度,蚀刻溶液的流动和喷嘴的定位,以最大限度地去除材料。 该方法可用于补偿STI氧化物的碗形不均匀性。 这些非均匀性在CMP过程之后得到补偿和解决。