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    • 4. 发明授权
    • Side-wall barrier structure and method of fabrication
    • 侧壁屏障结构及其制造方法
    • US06946735B2
    • 2005-09-20
    • US10307257
    • 2002-11-29
    • Stefan GernhardtJenny LianAndreas HilligerRainer BruchhausUwe WellhausenNicolas Nagel
    • Stefan GernhardtJenny LianAndreas HilligerRainer BruchhausUwe WellhausenNicolas Nagel
    • H01L21/02H01L21/768H01L23/48
    • H01L21/7687H01L21/76877H01L28/60
    • The invention includes a wafer having a poly silicon plug passing through a CP-contact. The poly silicon plug is formed from a relatively heavily doped poly silicon layer and a relatively lightly doped poly silicon layer. The relatively lightly doped poly silicon layer passes through the relatively heavily doped poly silicon layer to extend beyond the relatively heavily doped poly silicon layer towards the surface of the wafer. A barrier layer covers top and side walls of the relatively lightly doped poly silicon layer for reducing oxidation at the surface of the poly silicon plug. The wafer is fabricated by depositing a relatively heavily doped poly silicon layer in a CP-contact, depositing a relatively lightly doped poly silicon layer to pass through the relatively heavily doped poly silicon layer, and depositing a barrier layer to cover top and side walls of the relatively lightly doped poly silicon layer to reduce oxidation at the surface of the poly silicon plug.
    • 本发明包括具有通过CP接触的多硅插头的晶片。 多晶硅插头由相对高掺杂的多晶硅层和相对轻掺杂的多晶硅层形成。 相对轻掺杂的多晶硅层通过相对重掺杂的多晶硅层延伸超过相对重掺杂的多晶硅层朝向晶片的表面。 阻挡层覆盖相对较轻掺杂的多晶硅层的顶壁和侧壁,用于减少多晶硅插头表面的氧化。 通过在CP接触中沉积相对重掺杂的多晶硅层来制造晶片,沉积相对轻掺杂的多晶硅层以通过相对重掺杂的多晶硅层,以及沉积阻挡层以覆盖顶部和侧壁 相对轻掺杂的多晶硅层,以减少在多晶硅塞的表面处的氧化。