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1. 发明申请

US20170131143A1 PHOTODETECTION CIRCUIT AND OPERATING METHOD THEREOF 有权
公开(公告)号：US20170131143A1
公开(公告)日：2017-05-11
申请号：US15318373
申请日：2014-07-02
申请人： Andreas G. ANDREOU , Joseph H. LIN , Philippe O. POULIQUEN , Charbel G. RIZK , The Johns Hopkins University
发明人： Andreas G. Andreou , Joseph H. Lin , Philippe O. Pouliquen , Charbel G. Rizk
IPC分类号： G01J1/44 , H01L31/02 , H01L31/0352 , H01L31/107
CPC分类号： G01J1/44 , G01J2001/4406 , G01J2001/442 , G01J2001/4466 , G01J2001/448 , H01L31/02027 , H01L31/035272 , H01L31/107
摘要： A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

2. 发明授权

US08259293B2 Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system 有权
标题翻译：深亚微米和纳米CMOS单光子光电检测器像素，具有用于读出数据速率降低通信系统的基于事件的电路
公开(公告)号：US08259293B2
公开(公告)日：2012-09-04
申请号：US12531191
申请日：2008-03-17
申请人： Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
发明人： Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
IPC分类号： G01J1/42
CPC分类号： H01L27/14603 , H01L31/107
摘要： An avalanche photodiode is disclosed. The avalanche photodiode includes a substrate of a first conductivity type. A first well of a second conductivity type is formed within the substrate. A second well of the second conductivity type is formed substantially overlying and extending into the first well. A heavily doped region of the first conductivity type is formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region. A guard ring is formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region. An outer well ring of the second conductivity type is formed about the perimeter of the deep well and the guard ring.
摘要翻译：公开了一种雪崩光电二极管。雪崩光电二极管包括第一导电类型的衬底。在衬底内形成第二导电类型的第一阱。第二导电类型的第二阱基本上覆盖并延伸到第一阱中。第一导电类型的重掺杂区基本上覆盖并延伸到第一阱中，重掺杂区和第二阱之间的结形成雪崩倍增区。保护环由第一导电材料形成，该第一导电材料基本上位于至少部分地位于重掺杂区域下方的乘法区域的周边。围绕深井和保护环的周边形成第二导电类型的外井环。

3. 发明申请

US20100245809A1 DEEP SUBMICRON AND NANO CMOS SINGLE PHOTON PHOTODETECTOR PIXEL WITH EVENT BASED CIRCUITS FOR READOUT DATA-RATE REDUCTION COMMUNICATION SYSTEM 有权
标题翻译： DEEP SUBMICRON和NANO CMOS单根光电子像素与基于事件的电路，用于读取数据速率减少通信系统
公开(公告)号：US20100245809A1
公开(公告)日：2010-09-30
申请号：US12531191
申请日：2008-03-17
申请人： Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
发明人： Andreas G. Andreou , Miriam Adlerstein Marwick , Philippe O. Pouliquen
IPC分类号： H01L27/144 , H01L31/107 , G01J1/44
CPC分类号： H01L27/14603 , H01L31/107
摘要： An avalanche photodiode and a sensor array comprising an array of said avalanche photodiodes is disclosed. Then avalanche photodiode comprises a substrate of a first conductivity type; a first well of a second conductivity type formed within the substrate; a second well of the second conductivity type formed substantially overlying and extending into the first well; a heavily doped region of the first conductivity type formed substantially overlying and extending into the first well, the junction between the heavily doped region and the second well forming an avalanche multiplication region; a guard ring formed from a first conductivity material positioned substantially about the periphery of the multiplication region at least partially underlying the heavily doped region; and an outer well ring of the second conductivity type formed about the perimeter of the deep well and the guard ring. The sensor array comprises a plurality of pixel elements, each of the pixel elements being configured to operate on discrete value continuous time (DVCT) basis. Each of the pixel elements can include the avalanche photodiode previously described.
摘要翻译：公开了一种雪崩光电二极管和包括所述雪崩光电二极管阵列的传感器阵列。然后雪崩光电二极管包括第一导电类型的衬底; 在衬底内形成的第二导电类型的第一阱; 第二导电类型的第二阱基本上覆盖并延伸到第一阱中; 第一导电类型的重掺杂区域基本上覆盖并延伸到第一阱中，重掺杂区域和形成雪崩倍增区域的第二阱之间的结; 由第一导电材料形成的保护环，该第一导电材料基本上围绕至少部分地位于重掺杂区域下方的倍增区域的周边; 以及围绕深井和保护环的周边形成的第二导电类型的外阱环。传感器阵列包括多个像素元件，每个像素元件被配置为基于离散值连续时间（DVCT）进行操作。每个像素元件可以包括先前描述的雪崩光电二极管。

4. 发明授权

US06583445B1 Integrated electronic-optoelectronic devices and method of making the same 有权
标题翻译：集成电子光电器件及其制作方法
公开(公告)号：US06583445B1
公开(公告)日：2003-06-24
申请号：US09658259
申请日：2000-09-08
申请人： Ronald E. Reedy , Ravindra A. Athale , George J. Simonis , Andreas G. Andreou , Alyssa Apsel , Zaven Kalayjian , Philippe O. Pouliquen
发明人： Ronald E. Reedy , Ravindra A. Athale , George J. Simonis , Andreas G. Andreou , Alyssa Apsel , Zaven Kalayjian , Philippe O. Pouliquen
IPC分类号： H01L2715
CPC分类号： H01L31/101 , H01L2924/0002 , H01S5/021 , H01S5/02272 , H01S5/0261 , H01S5/0262 , H01S5/0265 , H01S5/183 , H01L2924/00
摘要： An integrated electronic-optoelectronic module comprising: an ultrathin silicon-on-sapphire composite substrate; at least one electronic device fabricated in the ultrathin silicon; and at least one optoelectronic device bonded to the ultrathin silicon-on-sapphire composite substrate and in electrical communication with the at least one electronic device fabricated in the ultrathin silicon layer. For example, VCSELs and photodetectors are integrated with CMOS electronic circuitry to provide useful modules for electro-optical interconnects for computing and switching systems.
摘要翻译：一种集成电子光电模块，包括：超薄蓝宝石蓝宝石复合衬底; 至少一个以超薄硅制造的电子器件; 以及至少一个光电子器件，其结合到超薄蓝宝石蓝宝石复合衬底上并且与在超薄硅层中制造的至少一个电子器件电连通。例如，VCSEL和光电检测器与CMOS电子电路集成，为计算和交换系统的电光互连提供有用的模块。

5. 发明授权

US5206541A Current-mode based analog circuits for synthetic neural systems 失效
标题翻译：用于合成神经系统的电流模式模拟电路
公开(公告)号：US5206541A
公开(公告)日：1993-04-27
申请号：US693310
申请日：1991-04-30
申请人： Kwabena A. Boahen , Andreas G. Andreou , Philippe O. Pouliquen , Robert E. Jenkins
发明人： Kwabena A. Boahen , Andreas G. Andreou , Philippe O. Pouliquen , Robert E. Jenkins
IPC分类号： G06N3/063
CPC分类号： G06N3/0635
摘要： A two transistor current-controlled current conveyor (C4) circuit is provided which exploits the translinear properties of the MOS transistor in subthreshold and uses unidirectional current signals. As a result, the circuits of the invention achieve high functionality and integration density with very low power dissipation. Two C4 circuits connected to and communicating through a bidirectional junction circuit of the invention permit the transmission of independent, bidirectional signals. These circuits are useful for implementing synthetic neural systems such as associative memories and silicon retinas, such as winner-takes-all and pyramidal neuron circuits and the outer-plexiform layer of a retina.
摘要翻译：提供了两个晶体管电流控制电流输送机（C4）电路，其利用亚阈值下的MOS晶体管的跨导特性，并使用单向电流信号。结果，本发明的电路以非常低的功耗实现了高功能性和集成密度。通过本发明的双向结电路连接和通信的两个C4电路允许传输独立的双向信号。这些电路对于实现诸如关联记忆和硅视网膜之类的合成神经系统是有用的，例如获胜者全部和锥体神经元电路以及视网膜的外丛状层。

6. 发明授权

US10178336B2 Flexible readout and signal processing in a computational sensor array 有权
公开(公告)号：US10178336B2
公开(公告)日：2019-01-08
申请号：US15635262
申请日：2017-06-28
申请人： The Johns Hopkins University
发明人： Charbel G. Rizk , Philippe O. Pouliquen , Andreas G. Andreou , Joseph H. Lin
IPC分类号： H04N5/378 , G01J1/44 , H04N5/365 , H04N5/3745 , H04N5/369 , H04N5/357 , H04N5/374
摘要： A computational sensing array includes an array of sensing elements. In each sensing element, a first signal is generated from a transducer. A second signal is produced by a collection unit in response to receiving the first signal. The second signal may be modified, in a conditioning unit. A sensing element preprocessing unit generates a word representing the value of the modified second signal, and may produce an indication of change of the first signal. A current value of the word may be stored in a state holding element local to the sensing element, and a previous value of the word may be retained in a further state holding element local to the sensing element.

7. 发明授权

US11620556B2 Hardware architecture and processing units for exact Bayesian inference with on-line learning and methods for same 有权
公开(公告)号：US11620556B2
公开(公告)日：2023-04-04
申请号：US16626589
申请日：2018-07-02
申请人： THE JOHNS HOPKINS UNIVERSITY
发明人： Andreas G. Andreou , Tomas Figliolia
IPC分类号： G06N7/00 , G06N20/00 , G06F7/70 , G06K9/62 , G06F17/18
摘要： A reconfigurable computing architecture for Bayesian Online ChangePoint Detection (BOCPD) is provided. In an exemplary embodiment, the architecture may be employed for use in video processing, and more specifically to computing whether a pixel in a video sequence belongs to the background or to an object (foreground). Each pixel may be processed with only information from its intensity and its time history. The computing architecture employs unary fixed point representation for numbers in time, using pulse density or random pulse density modulation—i.e., a stream of zeros and ones, where the mean of that stream represents the encoded value.

8. 发明授权

US09274186B2 Gas cell semiconductor chip assembly 有权
标题翻译：气体电池半导体芯片组装
公开(公告)号：US09274186B2
公开(公告)日：2016-03-01
申请号：US13933385
申请日：2013-07-02
申请人： The Johns Hopkins University
发明人： Haje Korth , Kim Strohbehn , Andreas G. Andreou , Francisco Tejada
IPC分类号： G01V3/00 , G01R33/26
CPC分类号： G01R33/26
摘要： A gas cell semiconductor chip assembly includes a gas cell including an alkali gas stored therein and a first semiconductor chip including a first resistive heating loop at a location corresponding to the gas cell to heat the gas cell and a second resistive heating loop around an outer perimeter of the first resistive heating loop. The second resistive heating loop is configured to cancel a magnetic field of the first resistive heating loop based on a current flowing through the first and second resistive heating loops.
摘要翻译：一种气体电池半导体芯片组件包括：气体池，其包含存储在其中的碱性气体;以及第一半导体芯片，该第一半导体芯片包括在与气体电池对应的位置处的第一电阻加热回路，以加热气体单元;以及第二电阻加热回路，的第一个电阻加热回路。第二电阻加热回路被配置为基于流过第一和第二电阻加热回路的电流来消除第一电阻加热回路的磁场。

9. 发明申请

US20160050382A1 FLEXIBLE READOUT AND SIGNAL PROCESSING IN A COMPUTATIONAL SENSOR ARRAY 审中-公开
标题翻译：计算机传感器阵列中的灵活读取和信号处理
公开(公告)号：US20160050382A1
公开(公告)日：2016-02-18
申请号：US14923784
申请日：2015-10-27
申请人： The Johns Hopkins University
发明人： Charbel G. Rizk , Philippe O. Pouliquen , Andreas G. Andreou , Joseph H. Lin
IPC分类号： H04N5/378 , H04N5/357
CPC分类号： H04N5/378 , G01J1/44 , H04N5/357 , H04N5/3651 , H04N5/369 , H04N5/374 , H04N5/37455
摘要： A computational sensing array includes an array of sensing elements. In each sensing element, a first signal is generated from a transducer. A second signal is produced by a collection unit in response to receiving the first signal. The second signal may be modified, in a conditioning unit. A sensing element preprocessing unit generates a word representing the value of the modified second signal, and may produce an indication of change of the first signal. A current value of the word may be stored in a state holding element local to the sensing element, and a previous value of the word may be retained in a further state holding element local to the sensing element.
摘要翻译：计算感测阵列包括一组感测元件。在每个感测元件中，从换能器产生第一信号。响应于接收到第一信号，收集单元产生第二信号。可以在调节单元中修改第二信号。感测元件预处理单元生成表示修改的第二信号的值的字，并且可以产生第一信号的变化的指示。字的当前值可以存储在感测元件的局部的状态保持元件中，并且字的先前值可以被保持在感测元件的局部的另外的状态保持元件中。

10. 发明授权

US10012534B2 Photodetection circuit having at least one counter operative in response to a mode switching circuit and operating method thereof 有权
公开(公告)号：US10012534B2
公开(公告)日：2018-07-03
申请号：US15318373
申请日：2014-07-02
申请人： The Johns Hopkins University
发明人： Andreas G. Andreou , Joseph H. Lin , Philippe O. Pouliquen , Charbel G. Rizk
IPC分类号： G01J1/44 , H01L31/02 , H01L31/107 , H01L31/0352
CPC分类号： G01J1/44 , G01J2001/4406 , G01J2001/442 , G01J2001/4466 , G01J2001/448 , H01L31/02027 , H01L31/035272 , H01L31/107
摘要： A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

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